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1. 发明授权

US07273763B1 Method of producing a micro-electromechanical element 失效
标题翻译：微机电元件的制造方法
公开(公告)号：US07273763B1
公开(公告)日：2007-09-25
申请号：US09868156
申请日：1999-09-29
申请人： Karl Neumeier , Dieter Bollmann
发明人： Karl Neumeier , Dieter Bollmann
IPC分类号： H01L21/00
CPC分类号： G01L9/0054 , G01L9/0042 , G01L9/0055 , G01L9/0073 , G01L13/025 , G01P15/0802
摘要： In a method of producing a micro-electromechanical element a first intermediate layer, which is applied to a first main surface of a first semiconductor wafer, is structured in a first step so as to produce a recess. The first semiconductor wafer is connected via the first intermediate layer to a second semiconductor wafer in such a way that a hermetically sealed cavity is defined by the recess. When one of the wafers has been thinned from a surface facing away from said first intermediate layer so as to produce a diaphragm-like structure on top of the cavity, electronic components are produced in said thinned semiconductor wafer making use of standard semiconductor processes. At least one further intermediate layer between the two semiconductor wafers is provided, which, prior to the connection of the two semiconductor wafers, is structured in such a way that the structure formed in said at least one further intermediate layer and the recess in said first intermediate layer define the cavity. Finally at least one defined opening is produced so as to provide access to the hermetically sealed cavity.
摘要翻译：在制造微电子机电元件的方法中，施加到第一半导体晶片的第一主表面的第一中间层被构造成第一步骤以产生凹陷。第一半导体晶片经由第一中间层连接到第二半导体晶片，使得由凹部限定气密密封腔。当其中一个晶片已经从背离所述第一中间层的表面变薄以在腔的顶部产生隔膜状结构时，使用标准半导体工艺在所述薄化的半导体晶片中产生电子部件。提供在两个半导体晶片之间的至少一个另外的中间层，其在两个半导体晶片的连接之前被构造成使得形成在所述至少一个另外的中间层中的结构和在所述第一中间层限定空腔。最后，产生至少一个限定的开口，以便提供对密封腔的通路。

2. 发明授权

US06518084B1 Method of producing a micromechanical structure for a micro-electromechanical element 失效
标题翻译：微机电元件的微机械结构的制造方法
公开(公告)号：US06518084B1
公开(公告)日：2003-02-11
申请号：US09868402
申请日：2001-09-12
申请人： Stefan Seitz , Leonhard Hoefter , Juergen Kruckow , Karl Neumeier , Dieter Bollmann
发明人： Stefan Seitz , Leonhard Hoefter , Juergen Kruckow , Karl Neumeier , Dieter Bollmann
IPC分类号： H01L2100
CPC分类号： G01P15/0802 , B81B2203/0127 , B81C1/00246 , B81C2201/019 , B81C2203/0728 , G01L9/0042 , G01L9/0073
摘要： In a method of producing a micromechanical structure for a micro-electromechanical element, a first intermediate layer, which is applied to a first main surface of a first semiconductor wafer, is structured in a first step so as to produce a recess. The first semiconductor wafer is then connected via the first intermediate layer to a second semiconductor wafer in such a way that a hermetically sealed cavity is defined by the recess. Finally, one of the wafers is thinned from a surface facing away from said first intermediate layer so as to produce a diaphragm-like structure on top of the cavity. At least one further intermediate layer is provided between the two semiconductor wavers which, prior to the connection of the two semiconductor wafers, is structured in such a way that the structure formed in said at least one further intermediate layer and the recess in said first intermediate layer define the cavity.
摘要翻译：在制造微电子机电元件的微机械结构的方法中，施加到第一半导体晶片的第一主表面的第一中间层被构造成第一步骤以产生凹陷。然后将第一半导体晶片经由第一中间层连接到第二半导体晶片，使得由凹部限定气密密封腔。最后，其中一个晶片从背离所述第一中间层的表面变薄，从而在空腔的顶部产生隔膜状结构。在两个半导体波幅之间提供至少一个另外的中间层，其在两个半导体晶片的连接之前被构造成使得在所述至少一个另外的中间层中形成的结构和所述第一中间层层定义空腔。

3. 发明授权

US06451668B1 Method of producing calibration structures in semiconductor substrates 失效
标题翻译：在半导体衬底中制造校准结构的方法
公开(公告)号：US06451668B1
公开(公告)日：2002-09-17
申请号：US09868174
申请日：2001-07-12
申请人： Karl Neumeier , Dieter Bollmann
发明人： Karl Neumeier , Dieter Bollmann
IPC分类号： H01L2176
CPC分类号： B81C1/00126
摘要： The invention relates to a method of producing calibration structures in semiconductor substrates in the manufacture of components, specifically micro-mechanical systems with integrated semiconductor electronic systems. In the method a first layer (3) is structured on a first substrate (4, 5, 6) to produce first areas (2) which are required for the function of the components. Moreover, second areas (1) are produced in the first layer (3), which represent the calibration structures. The second areas (1) present a refractive index different from the refractive index of adjoining areas. Subsequently, the first substrate (4, 5, 6) is joined with a second substrate (12) such that the first layer (3) will be enclosed between the two substrates. Then either the first or the second substrate is thinned down to a residual thickness. The substrate layer with this residual thickness constitutes, for instance, the membrane in a pressure sensor. The inventive method does not entail a weakening of the mechanical properties of supporting layers. The method may be integrated into the manufacturing process without additional process steps or complex and expensive etching techniques.
摘要翻译：本发明涉及一种在制造元件的半导体衬底中制造校准结构的方法，特别是具有集成的半导体电子系统的微机械系统。在该方法中，第一层（3）被构造在第一衬底（4,5,6）上，以产生为组件的功能所需的第一区域（2）。此外，在第一层（3）中产生代表校准结构的第二区域（1）。第二区域（1）呈现与相邻区域的折射率不同的折射率。随后，第一衬底（4,5,6）与第二衬底（12）接合，使得第一层（3）将封闭在两个衬底之间。然后将第一或第二基板减薄至残余厚度。具有该残余厚度的基底层例如构成压力传感器中的膜。本发明的方法不会使支撑层的机械性能变弱。该方法可以集成到制造过程中，而不需要额外的工艺步骤或复杂和昂贵的蚀刻技术。

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