专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20190240658A1 SYSTEM AND METHOD FOR FORMING A BIOLOGICAL MICRODEVICE 审中-公开
公开(公告)号：US20190240658A1
公开(公告)日：2019-08-08
申请号：US15887556
申请日：2018-02-02
申请人： University of Central Florida Research Foundation, Inc.
发明人： Swaminathan RAJARAMAN , Avra KUNDU , Tariq AUSAF
IPC分类号： B01L3/00 , B81B1/00 , B81C1/00 , G01N33/483 , A61M37/00
CPC分类号： B01L3/502707 , A61M37/0015 , A61M2037/0053 , B81B1/00 , B81B1/006 , B81B2203/0338 , B81B2203/0361 , B81B2203/04 , B81C1/00095 , B81C1/00111 , B81C2201/0146 , B81C2201/0159 , B81C2201/0185 , B81C2201/019 , G01N33/4836 , G03F7/162 , G03F7/168 , G03F7/2004
摘要： A method for forming a biological microdevice includes applying a biocompatible coarse scale additive process with an additive device and a biocompatible material to form an object. The coarse scale is a dimension not less than about 100 μm. The method also includes applying a biocompatible fine scale subtractive process with a subtractive device to the object. The fine scale is a dimension not greater than about 1000 μm. The method also includes moving the object between the additive device and the subtractive device. A system is also provided for performing the above method and includes the additive device, the subtractive device, a means for transporting the object between the additive device and subtractive device and a processor with a memory including instructions to perform one or more of the above method steps.

2. 发明授权

US06794261B2 Methods of forming void regions, dielectric regions and capacitor constructions 失效
标题翻译：形成空隙区域，电介质区域和电容器结构的方法
公开(公告)号：US06794261B2
公开(公告)日：2004-09-21
申请号：US10044206
申请日：2002-01-11
申请人： Jerome Michael Eldridge
发明人： Jerome Michael Eldridge
IPC分类号： H01L2120
CPC分类号： B81C1/00119 , B81B2203/0315 , B81B2203/0338 , B81C1/00047 , B81C2201/0109 , B81C2201/0146 , H01L21/31138 , H01L28/40
摘要： In one aspect, the invention includes a method of forming a void region associated with a substrate, comprising: a) providing a substrate; b) forming a sacrificial mass over the substrate; c) subjecting the mass to hydrogen to convert a component of the mass to a volatile form; and d) volatilizing the volatile form of the component from the mass to leave a void region associated with the substrate. In another aspect, the invention includes a method of forming a capacitor construction, comprising: a) forming a first capacitor electrode over a substrate; b) forming a sacrificial material proximate the first capacitor electrode; c) forming a second capacitor electrode proximate the sacrificial material, the second capacitor electrode being separated from the first capacitor electrode by the sacrificial material, at least one of the first and second electrodes being a metal-comprising layer; and d) subjecting the sacrificial material to conditions which transport a component from the sacrificial material to the metal-comprising layer, the transported component leaving a void region between the first and second capacitor electrodes.
摘要翻译：一方面，本发明包括形成与衬底相关联的空隙区域的方法，包括：a）提供衬底; b）在衬底上形成牺牲物质; c）使所述物质经受氢气将所述物质的组分转化为挥发性形式; 以及d）从所述物质挥发所述组分的挥发性形式以留下与所述基材相关联的空隙区域。另一方面，本发明包括一种形成电容器结构的方法，包括：a）在衬底上形成第一电容器电极; b）在第一电容器电极附近形成牺牲材料; c）在所述牺牲材料附近形成第二电容器电极，所述第二电容器电极通过所述牺牲材料与所述第一电容器电极分离，所述第一和第二电极中的至少一个是含金属的层; 以及d）对所述牺牲材料进行将组分从所述牺牲材料输送到所述含金属层的条件，所述传输部件在所述第一和第二电容器电极之间留下空隙区域。

3. 发明授权

US09862600B2 Chip structure 有权
公开(公告)号：US09862600B2
公开(公告)日：2018-01-09
申请号：US14718152
申请日：2015-05-21
申请人： ams International AG
发明人： Roel Daamen , Hendrik Bouman , Kailash Vijayakumar
IPC分类号： B81C1/00 , H01L23/64 , B81B7/00
CPC分类号： B81C1/00825 , B81B7/0016 , B81B2201/0264 , B81B2203/0127 , B81B2207/015 , B81B2207/03 , B81C2201/0104 , B81C2201/0146 , B81C2203/0735 , H01L23/642
摘要： One example discloses an chip, comprising: a substrate; a first side of a passivation layer coupled to the substrate; a device, having a device height and a cavity, wherein a first device surface is coupled to a second side of the passivation layer which is opposite to the first side of the passivation layer; and a set of structures coupled to the second side of the passivation layer and configured to have a structure height greater than or equal to the device height.

4. 发明申请

US20160340180A1 CHIP STRUCTURE 有权
标题翻译：芯片结构
公开(公告)号：US20160340180A1
公开(公告)日：2016-11-24
申请号：US14718152
申请日：2015-05-21
申请人： ams International AG
发明人： Roel Daamen , Hendrik Bouman , Kailash Vijayakumar
IPC分类号： B81C1/00 , B81B7/00
CPC分类号： B81C1/00825 , B81B7/0016 , B81B2201/0264 , B81B2203/0127 , B81B2207/015 , B81B2207/03 , B81C2201/0104 , B81C2201/0146 , B81C2203/0735 , H01L23/642
摘要： One example discloses an chip, comprising: a substrate; a first side of a passivation layer coupled to the substrate; a device, having a device height and a cavity, wherein a first device surface is coupled to a second side of the passivation layer which is opposite to the first side of the passivation layer; and a set of structures coupled to the second side of the passivation layer and configured to have a structure height greater than or equal to the device height.
摘要翻译：一个实例公开了一种芯片，包括：基板; 耦合到所述衬底的钝化层的第一侧; 具有器件高度和空腔的器件，其中第一器件表面耦合到钝化层的与钝化层的第一侧相对的第二侧; 以及耦合到钝化层的第二侧并且被配置为具有大于或等于器件高度的结构高度的一组结构。

5. 发明申请

US20110174634A1 MACHINE AND METHOD FOR MACHINING A PART BY MICRO-ELECTRICAL DISCHARGE MACHINING 失效
标题翻译：通过微电脑加工加工零件的机器和方法
公开(公告)号：US20110174634A1
公开(公告)日：2011-07-21
申请号：US13119490
申请日：2009-09-09
申请人： Michel Cabrera
发明人： Michel Cabrera
IPC分类号： B23H3/04 , B23H9/00
CPC分类号： B23H3/04 , B23H5/02 , B23H7/065 , B23H7/08 , B23H9/00 , B23H9/08 , B81C2201/0146
摘要： The invention relates to a machine for machining a part by micro-electrical discharge machining, said machine comprising a mechanism (44, 45, 46, 48) for modifying the configuration of the machine so as to alternatively and reversibly switch from a machining configuration to a sharpening configuration in which the tip of a same etching electrode (20) and another electrode (64) are dipped in an electrolyte bath in order to sharpen the tip of the etching electrode by electrochemnical corrosion.
摘要翻译：本发明涉及一种用于通过微放电加工来加工零件的机器，所述机器包括用于修改机器的构造的机构（44,45,46,48），以便可替代地且可逆地从加工构型切换到其中相同的蚀刻电极（20）的尖端和另一个电极（64）被浸入电解质浴中以通过电化学腐蚀来锐化腐蚀电极的尖端的锐化构造。

6. 发明授权

US07655496B1 Metal lift-off systems and methods using liquid solvent and frozen gas 有权
标题翻译：金属剥离系统和使用液体溶剂和冷冻气体的方法
公开(公告)号：US07655496B1
公开(公告)日：2010-02-02
申请号：US11831823
申请日：2007-07-31
申请人： Patrick Franklin , John J. Naughton
发明人： Patrick Franklin , John J. Naughton
IPC分类号： H01L21/00 , H01L21/44 , H01L21/461
CPC分类号： H01L21/0272 , B81C1/00634 , B81C2201/0146
摘要： A method of fabricating a semiconductor device includes patterning a layer of photoresist onto a surface of a wafer to define metal feature areas and residual metal areas. A layer of metal is deposited over the patterned layer of photoresist, the metal layer includes metal feature portions in the metal feature areas, residual metal areas in the residual metal areas, and residual metal flaps at the edges of the metal feature portions. The wafer is sprayed with high-pressure solvent at a pressure to dissolve the layer of photoresist and to physically remove the residual metal portions from the residual metal areas, leaving only at least a portion of the residual metal flaps. The wafer is sprayed with a stream of frozen gas particles to remove the residual metal flaps.
摘要翻译：制造半导体器件的方法包括将光致抗蚀剂层图案化到晶片的表面上以限定金属特征区域和残余金属区域。在图案化的光致抗蚀剂层上沉积金属层，金属层包括金属特征区域中的金属特征部分，残余金属区域中的残余金属区域以及金属特征部分边缘处的残余金属片。在压力下用高压溶剂喷涂晶片，以溶解光致抗蚀剂层，并将物理上从剩余的金属区域除去残留的金属部分，仅留下剩余金属片的至少一部分。用冷冻气体颗粒流喷射晶片以除去残留的金属襟翼。

7. 发明授权

US6140200A Methods of forming void regions dielectric regions and capacitor constructions 有权
标题翻译：形成空隙区电介质区域和电容器结构的方法
公开(公告)号：US6140200A
公开(公告)日：2000-10-31
申请号：US146117
申请日：1998-09-02
申请人： Jerome Michael Eldridge
发明人： Jerome Michael Eldridge
IPC分类号： B81B3/00 , H01L21/02 , H01L21/311 , H01L21/20
CPC分类号： B81C1/00119 , B81C1/00047 , H01L21/31138 , H01L28/40 , B81B2203/0315 , B81B2203/0338 , B81C2201/0109 , B81C2201/0146
摘要： In one aspect, the invention includes a method of forming a void region associated with a substrate, comprising: a) providing a substrate; b) forming a sacrificial mass over the substrate; c) subjecting the mass to hydrogen to convert a component of the mass to a volatile form; and d) volatilizing the volatile form of the component from the mass to leave a void region associated with the substrate. In another aspect, the invention includes a method of forming a capacitor construction, comprising: a) forming a first capacitor electrode over a substrate; b) forming a sacrificial material proximate the first capacitor electrode; c) forming a second capacitor electrode proximate the sacrificial material, the second capacitor electrode being separated from the first capacitor electrode by the sacrificial material, at least one of the first and second electrodes being a metal-comprising layer; and d) subjecting the sacrificial material to conditions which transport a component from the sacrificial material to the metal-comprising layer, the transported component leaving a void region between the first and second capacitor electrodes.
摘要翻译：一方面，本发明包括形成与衬底相关联的空隙区域的方法，包括：a）提供衬底; b）在衬底上形成牺牲物质; c）使所述物质经受氢气将所述物质的组分转化为挥发性形式; 以及d）从所述物质挥发所述组分的挥发性形式以留下与所述基材相关联的空隙区域。另一方面，本发明包括一种形成电容器结构的方法，包括：a）在衬底上形成第一电容器电极; b）在第一电容器电极附近形成牺牲材料; c）在所述牺牲材料附近形成第二电容器电极，所述第二电容器电极通过所述牺牲材料与所述第一电容器电极分离，所述第一和第二电极中的至少一个是含金属的层; 以及d）对所述牺牲材料进行将组分从所述牺牲材料输送到所述含金属层的条件，所述传输部件在所述第一和第二电容器电极之间留下空隙区域。

8. 发明申请

US20170233891A1 METHOD OF FABRICATING A DIAMOND MEMBRANE 审中-公开
公开(公告)号：US20170233891A1
公开(公告)日：2017-08-17
申请号：US15519220
申请日：2015-10-15
申请人： The University of Melbourne
发明人： Afaq Habib Piracha , Steven Prawer , Kumaravelu Ganesan , Snjezana Tomljenovic-Hanic , Desmond Lau
IPC分类号： C30B25/20 , B23K26/00 , C23C16/27 , C23C16/04 , C23C16/44 , B81C3/00 , C25F3/02 , C30B29/04 , C30B25/04 , C30B33/10 , C30B33/12 , B23K26/362 , C23C16/56
CPC分类号： C30B25/20 , B23K26/0006 , B23K26/362 , B23K2103/50 , B81C3/001 , B81C2201/0143 , B81C2201/0146 , B81C2201/0187 , B81C2201/0198 , C23C16/042 , C23C16/274 , C23C16/279 , C23C16/4408 , C23C16/56 , C25F3/02 , C30B25/04 , C30B25/18 , C30B29/04 , C30B33/10 , C30B33/12
摘要： The present disclosure provides a method of fabricating a diamond membrane. The method comprises providing a substrate and a support structure. The substrate comprises a diamond material having a first surface and the substrate further comprises a sub-surface layer that is positioned below the first surface and has a crystallographic structure that is different to that of the diamond material. The sub-surface layer is positioned to divide the diamond material into first and second regions wherein the first region is positioned between the first surface and the sub-surface layer. The support structure also comprises a diamond material and is connected to, and covers a portion of, the first surface of the substrate. The method further comprises selectively removing the second region of the diamond material from the substrate by etching away at least a portion of the sub-surface layer of the substrate.

9. 发明申请

US20150277047A1 METHODS OF FABRICATING PHOTOACTIVE SUBSTRATES SUITABLE FOR ELECTROMAGNETIC TRANSMISSION AND FILTERING APPLICATIONS 审中-公开
标题翻译：制造适用于电磁传输和滤波应用的光电衬底的方法
公开(公告)号：US20150277047A1
公开(公告)日：2015-10-01
申请号：US14437329
申请日：2013-09-11
申请人： LIFE BIOSCIENCE, INC.
发明人： Jeb H. Flemming , Leo Kevin Dunn , Carrie F. Schmidt , Drichelle Lynn Pierce , Roger Cook , R. Blake Ridgeway , Colin T. Buckley , James Mathew Gouker
IPC分类号： G02B6/136 , G02B6/12 , G02B6/132 , G02B1/12
CPC分类号： G02B6/136 , B81B2201/058 , B81B2203/0338 , B81C1/00071 , B81C2201/0146 , C03C3/095 , C03C4/04 , C03C10/00 , C03C15/00 , C03C17/06 , C03C23/0025 , G02B1/12 , G02B6/12 , G02B6/132 , G02B2006/12038 , G02B2006/12061 , G02B2006/12097 , G02B2006/12104 , G02B2006/12109 , G03F7/0043 , H01L2224/16225 , H01L2924/15311
摘要： A method of fabrication and device made by preparing a photosensitive glass substrate comprising at least silica, lithium oxide, aluminum oxide, and cerium oxide, masking a design layout comprising one or more holes to form one or more electrical conduction paths on the photosensitive glass substrate, exposing at least one portion of the photosensitive glass substrate to an activating energy source, exposing the photosensitive glass substrate to a heating phase of at least ten minutes above its glass transition temperature, cooling the photosensitive glass substrate to transform at least part of the exposed glass to a crystalline material to form a glass-crystalline substrate and etching the glass-crystalline substrate with an etchant solution to form one or more angled channels that are then coated.
摘要翻译：一种通过制备至少包含二氧化硅，氧化锂，氧化铝和氧化铈的光敏玻璃基板制造的器件的方法，其掩蔽包含一个或多个孔的设计布局，以在感光玻璃基板上形成一个或多个导电路径将感光玻璃基板的至少一部分暴露于激活能源，将感光玻璃基板暴露于高于其玻璃化转变温度至少十分钟的加热阶段，冷却感光玻璃基板以将至少部分暴露的玻璃形成晶体材料以形成玻璃晶体衬底并用蚀刻剂溶液蚀刻玻璃晶体衬底以形成一个或多个成角度的沟道，然后涂覆其上。

10. 发明授权

US08758590B2 Method for treating the surface of an electrically conducting substrate surface 有权
标题翻译：用于处理导电基底表面的表面的方法
公开(公告)号：US08758590B2
公开(公告)日：2014-06-24
申请号：US12295321
申请日：2007-04-20
申请人： Hans-Joachim Quenzer , Gerfried Zwicker
发明人： Hans-Joachim Quenzer , Gerfried Zwicker
IPC分类号： C25D17/00 , C25D5/02 , B23H3/00
CPC分类号： B23H3/00 , B81C1/00634 , B81C2201/0146 , C25F3/14
摘要： Disclosed is a method of treating the surface of an electrically conducting substrate surface wherein a tool comprising an ion-conducting solid material is brought into contact at least in some areas with the substrate surface. The tool conducts the metal ions of the substrate and an electric potential is applied so that an electrical potential gradient is applied between the substrate surface and the tool in such a manner that metal ions are drawn from the substrate surface or deposited onto the substrate surface by means of the tool.
摘要翻译：公开了一种处理导电衬底表面的方法，其中包括离子导电固体材料的工具至少在一些区域与衬底表面接触。该工具传导衬底的金属离子并且施加电位，使得电位梯度以这样的方式施加在衬底表面和工具之间，使得金属离子从衬底表面被拉出或沉积到衬底表面上手段的工具。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式