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1. 发明授权

US08709848B2 Method for etched cavity devices 有权
标题翻译：蚀刻腔体装置的方法
公开(公告)号：US08709848B2
公开(公告)日：2014-04-29
申请号：US13088100
申请日：2011-04-15
申请人： Srivatsa G. Kundalgurki , Scott Dye
发明人： Srivatsa G. Kundalgurki , Scott Dye
IPC分类号： H01L21/02 , H01L21/3065
CPC分类号： G01L9/0042 , B81C1/00047 , B81C2201/0123 , B81C2201/0146 , B81C2201/017 , H01L21/02057 , H01L21/30608 , H01L21/3065
摘要： MEMS devices (40) using etched cavities (42) are desirably formed using multiple etching steps. Preliminary cavities (20) formed by locally anisotropic etching to nearly the final depth have irregular (46) sidewalls (44) and steep and/or inconsistent sidewall (44) to bottom (54) intersection angles (48). This leads to less than desired cavity diaphragm (26) burst strengths. Final cavities (42) with smooth sidewalls (50), smaller and consistent sidewall (50) to bottom (54) intersection angles (58), and having more than doubled cavity diaphragm (26) burst strengths are obtained by treating the preliminary cavities (20) with TMAH etchant, preferably relatively dilute TMAH etchant. In a preferred embodiment, a cleaning step is performed between the etching step and the TMAH treatment step to remove any anisotropic etching by-products present on the preliminary cavities' (20) initial sidewalls (44). The multi-step cavity etching procedure is especially useful for forming robust MEMS pressure sensors, but is applicable to any type of MEMS device.
摘要翻译：期望使用多个蚀刻步骤形成使用蚀刻腔（42）的MEMS器件（40）。通过局部各向异性腐蚀形成的接近最终深度的初级腔（20）具有不规则的（46）侧壁（44）和陡峭和/或不一致的侧壁（44）至底部（54）交叉角（48）。这导致比所需的腔膜（26）突发强度小。通过处理预备空腔（2）获得具有平滑侧壁（50），更小且一致的侧壁（50）到底部（54）交叉角（58）并且具有多于两倍的腔隔膜（26）的突出强度的最终腔（42） 20）与TMAH蚀刻剂，优选相对稀释的TMAH蚀刻剂。在优选的实施方案中，在蚀刻步骤和TMAH处理步骤之间进行清洁步骤以去除预备空腔（20）初始侧壁（44）上存在的任何各向异性蚀刻副产物。多阶腔蚀刻程序对于形成坚固的MEMS压力传感器尤其有用，但适用于任何类型的MEMS器件。

2. 发明申请

US20120264249A1 METHOD FOR ETCHED CAVITY DEVICES 有权
标题翻译：蚀刻孔装置的方法
公开(公告)号：US20120264249A1
公开(公告)日：2012-10-18
申请号：US13088100
申请日：2011-04-15
申请人： Srivatsa G. Kundalgurki , Scott Dye
发明人： Srivatsa G. Kundalgurki , Scott Dye
IPC分类号： H01L21/02 , H01L21/3065
CPC分类号： G01L9/0042 , B81C1/00047 , B81C2201/0123 , B81C2201/0146 , B81C2201/017 , H01L21/02057 , H01L21/30608 , H01L21/3065
摘要： MEMS devices (40) using etched cavities (42) are desirably formed using multiple etching steps. Preliminary cavities (20) formed by locally anisotropic etching to nearly the final depth have irregular (46) sidewalls (44) and steep and/or inconsistent sidewall (44) to bottom (54) intersection angles (48). This leads to less than desired cavity diaphragm (26) burst strengths. Final cavities (42) with smooth sidewalls (50), smaller and consistent sidewall (50) to bottom (54) intersection angles (58), and having more than doubled cavity diaphragm (26) burst strengths are obtained by treating the preliminary cavities (20) with TMAH etchant, preferably relatively dilute TMAH etchant. In a preferred embodiment, a cleaning step is performed between the etching step and the TMAH treatment step to remove any anisotropic etching by-products present on the preliminary cavities' (20) initial sidewalls (44). The multi-step cavity etching procedure is especially useful for forming robust MEMS pressure sensors, but is applicable to any type of MEMS device.
摘要翻译：期望使用多个蚀刻步骤形成使用蚀刻腔（42）的MEMS器件（40）。通过局部各向异性腐蚀形成的接近最终深度的初级腔（20）具有不规则的（46）侧壁（44）和陡峭和/或不一致的侧壁（44）至底部（54）交叉角（48）。这导致比所需的腔膜（26）突发强度小。通过处理预备空腔（2）获得具有平滑侧壁（50），更小且一致的侧壁（50）到底部（54）交叉角（58）并且具有多于两倍的腔隔膜（26）的突出强度的最终腔（42） 20）与TMAH蚀刻剂，优选相对稀释的TMAH蚀刻剂。在优选的实施方案中，在蚀刻步骤和TMAH处理步骤之间进行清洁步骤以去除预备空腔（20）初始侧壁（44）上存在的任何各向异性蚀刻副产物。多阶腔蚀刻程序对于形成坚固的MEMS压力传感器尤其有用，但适用于任何类型的MEMS器件。

3. 发明申请

US20120175467A1 MICROMETEOROID AND ORBITAL DEBRIS (MMOD) AND INTEGRATED MULTI-LAYER INSULATION (IMLI) STRUCTURE 审中-公开
标题翻译：微米级和ORBITAL DEBRIS（MMOD）和一体化多层绝缘（IMLI）结构
公开(公告)号：US20120175467A1
公开(公告)日：2012-07-12
申请号：US13313723
申请日：2011-12-07
申请人： Scott Dye , Alan Kopelove
发明人： Scott Dye , Alan Kopelove
IPC分类号： B64G1/56 , B23P11/00 , B64G1/58
CPC分类号： F16L59/065 , B64G1/50 , B64G1/546 , B64G1/56 , Y10T29/49826
摘要： A micrometeoroid and orbital debris-integrated multi-layer insulation (MMOD/IMLI) structure including at least one ballistic layer, which may be flexible, and at least one insulation layer, which may also be flexible is described. The ballistic layer or layers and the insulation layer or layers may be separated by a plurality of spacers. In one example, the spacers include a leg extending obliquely between the ballistic layer and the insulation layer. The spacer may include three deformable legs defining a tri-pod configuration with the tri-pod configuration including a ring supporting the legs.
摘要翻译：描述了包括至少一个弹性层的微流星体和轨道碎片集成多层绝缘（MMOD / IMLI）结构，以及至少一个也可以是柔性的绝缘层。防弹层或绝缘层可以被多个隔离物隔开。在一个示例中，间隔件包括在防弹层和绝缘层之间倾斜延伸的腿。间隔件可以包括限定三荚构造的三个可变形腿，其中三荚构造包括支撑腿的环。

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