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1. 发明授权

US08418714B2 Flow rate range variable type flow rate control apparatus 有权
标题翻译：流量范围可变型流量控制装置
公开(公告)号：US08418714B2
公开(公告)日：2013-04-16
申请号：US11913277
申请日：2006-06-22
申请人： Tadahiro Ohmi , Masahito Saito , Shoichi Hino , Tsuyoshi Shimazu , Kazuyuki Miura , Kouji Nishino , Masaaki Nagase , Katsuyuki Sugita , Kaoru Hirata , Ryousuke Dohi , Takashi Hirose , Tsutomu Shinohara , Nobukazu Ikeda , Tomokazu Imai , Toshihide Yoshida , Hisashi Tanaka
发明人： Tadahiro Ohmi , Masahito Saito , Shoichi Hino , Tsuyoshi Shimazu , Kazuyuki Miura , Kouji Nishino , Masaaki Nagase , Katsuyuki Sugita , Kaoru Hirata , Ryousuke Dohi , Takashi Hirose , Tsutomu Shinohara , Nobukazu Ikeda , Tomokazu Imai , Toshihide Yoshida , Hisashi Tanaka
IPC分类号： F16K31/12 , F16K31/36
CPC分类号： G05D7/0641 , G01F1/363 , G01F1/6842 , G01F1/6847 , G01F5/005 , G01F7/005 , G05D7/0635 , G05D7/0647 , G05D23/1927 , Y10T137/0379 , Y10T137/7759 , Y10T137/776 , Y10T137/8593 , Y10T137/86734 , Y10T137/86815 , Y10T137/87265 , Y10T137/87314 , Y10T137/8741 , Y10T137/87499 , Y10T137/87684
摘要： A pressure type flow rate control apparatus is provided wherein flow rate of fluid passing through an orifice is computed as Qc=KP1 (where K is a proportionality constant) or as Qc=KP2m(P1−P2)n (where K is a proportionality constant, m and n constants) by using orifice upstream side pressure P1 and/or orifice downstream side pressure P2. A fluid passage between the downstream side of a control valve and a fluid supply pipe of the pressure type flow rate control apparatus comprises at least 2 fluid passages in parallel, and orifices having different flow rate characteristics are provided for each of these fluid passages, wherein fluid in a small flow quantity area flows to one orifice for flow control of fluid in the small flow quantity area, while fluid in a large flow quantity area flows to the other orifice for flow control of fluid in the large flow quantity area.
摘要翻译：提供一种压力式流量控制装置，其中通过孔口的流体流量计算为Qc = KP1（其中K是比例常数）或Qc = KP2m（P1-P2）n（其中K是比例常数，m和n常数）通过使用孔口上游侧压力P1和/或孔口下游侧压力P2。控制阀的下游侧和压力式流量控制装置的流体供给管之间的流体通道平行地包括至少2个流体通道，并且为每个这些流体通道设置具有不同流量特性的孔，其中小流量区域中的流体流向一个孔，用于在小流量区域中的流体的流量控制，而大流量区域中的流体流向另一个孔口，用于大流量区域中的流体的流量控制。

2. 发明授权

US08063652B2 Probing apparatus and method for adjusting probing apparatus 失效
标题翻译：探测装置及其调试方法
公开(公告)号：US08063652B2
公开(公告)日：2011-11-22
申请号：US11542759
申请日：2006-10-02
申请人： Takashi Amemiya , Syuichi Tsukada
发明人： Takashi Amemiya , Syuichi Tsukada
IPC分类号： G01R31/20
CPC分类号： G01R1/07371
摘要： The present invention stably maintains contact between probe pins and a wafer. Screws are provided at a plurality of positions in an outer circumferential portion of a printed circuit board. On a lower surface side of the outer circumferential portion of the printed circuit board, a retainer plate is provided, and a bottom end surface of each of the screws is held down with the retainer plate. Turning each of the screws in a state where the bottom end surface of the each of the screws is held down with the retainer plate causes the outer circumferential portion of the printed circuit board to be moved up and down. Adjusting a height of the outer circumferential portion of the printed circuit board by turning each of the screws located at the plurality of positions enables parallelism of the entire probe card with respect to the wafer to be adjusted.
摘要翻译：本发明稳定地保持探针和晶片之间的接触。螺钉设置在印刷电路板的外周部的多个位置。在印刷电路板的外周部的下表面侧设置有保持板，并且每个螺钉的底端面用保持板保持。在每个螺钉的底端表面用保持板压住的状态下转动每个螺钉使得印刷电路板的外周部分上下移动。通过转动位于多个位置的每个螺钉来调节印刷电路板的外周部分的高度使得能够平行整个探针卡相对于待调整的晶片。

3. 发明申请

US20110094596A1 Apparatus and method of dividing and supplying gas to a chamber from a gas supply apparatus equipped with flow-rate control system 有权
标题翻译：从配备有流量控制系统的气体供给装置向腔室分配和供给气体的装置和方法
公开(公告)号：US20110094596A1
公开(公告)日：2011-04-28
申请号：US10561514
申请日：2004-06-10
申请人： Kazuhiko Sugiyama , Nobukazu Ikeda , Kouji Nishino , Ryousuke Dohi , Toyomi Uenoyama
发明人： Kazuhiko Sugiyama , Nobukazu Ikeda , Kouji Nishino , Ryousuke Dohi , Toyomi Uenoyama
IPC分类号： F15D1/00 , F16K31/02
CPC分类号： G05D7/00 , G05D7/0623 , G05D7/0652 , G05D7/0658 , G05D7/0664 , G05D11/132 , Y10T137/0379 , Y10T137/0396 , Y10T137/2521 , Y10T137/2529 , Y10T137/2562 , Y10T137/263 , Y10T137/2663 , Y10T137/7761 , Y10T137/8175
摘要： The present-invention supplies a quantity Q of gas while dividing at flow rate ratio Q1/Q2 from a gas supply facility equipped with a flow controller. A a total quantity Q=Q1+Q2 of gas is supplied into a chamber at flow rate Q1 and Q2 through shower plates fixed to ends of branch supply lines by providing open/close valves with a plurality of branch supply lines GL1 and GL2, respectively, to supply the specified quantity of gas from the gas supply facility, and by utilizing bypass line BL1 on the downstream side of the open/close valve OV1 and branched from GL1, bypass line BL2 on the downstream side of the open/close valve OV2 and branched from GL2, pressure type division quantity controller connected to the bypass line BL1 and the bypass line BL2, sensor measuring pressure inside branch supply line GL1, and another sensor measuring pressure inside branch supply line GL2.
摘要翻译：本发明提供一种气体量Q，同时以具有流量控制器的气体供给设备的流量比Q1 / Q2分压。通过分别提供多个分支供电线GL1和GL2的开/关阀，将总量Q = Q1 + Q2的气体以流量Q1和Q2供给到固定到分支供应管线端部的喷淋板为了从气体供给装置供给规定量的气体，并且通过在开/关阀OV1的下游侧利用旁路管路BL1从GL1分支，在开/关阀OV2的下游侧的旁通管线BL2 从GL2分支，连接到旁路线BL1和旁路线BL2的压力分型量控制器，分支供给线GL1内的传感器测量压力，以及测量分支供给线GL2内的压力的另一传感器。

4. 发明授权

US07594517B2 Gas supply facility of a chamber and a method for an internal pressure control of the chamber for which the facility is employed 有权
标题翻译：室的气体供应设备和用于对其进行设备的室的内部压力控制的方法
公开(公告)号：US07594517B2
公开(公告)日：2009-09-29
申请号：US10566495
申请日：2004-07-28
申请人： Hiroshi Kannan , Tomio Uno , Ryousuke Dohi , Kouji Nishino , Osamu Nakamura , Atsushi Matsumoto , Nobukazu Ikeda
发明人： Hiroshi Kannan , Tomio Uno , Ryousuke Dohi , Kouji Nishino , Osamu Nakamura , Atsushi Matsumoto , Nobukazu Ikeda
IPC分类号： G05D7/06
CPC分类号： G05D7/0652 , Y10T137/7761 , Y10T137/8741 , Y10T137/87507
摘要： The present invention prevents substantial reduction of flow rate control accuracy in a small flow quantity range, achieves accurate flow rate control over the entire range of flow rate control, and also allows control of a wide pressure range of a chamber with accurate flow rate control. Specifically, a gas supply facility having a plurality of pressure type flow controllers connected in parallel, and a third controller to control operation of the pressure type flow controllers to supply a desired gas exhausted by a vacuum pump to a chamber while controlling its flow rate, is provided wherein one pressure type flow controller is a controller used to control a gas flow rate range up to 10% of the maximum flow rate supplied to the chamber, while the remaining pressure type flow controllers are made to be ones controlling the rest of the gas flow rate range.
摘要翻译：本发明防止了在小流量范围内的流量控制精度的显着降低，在整个流量控制范围内实现精确的流量控制，并且还允许以精确的流量控制来控制腔室的宽压力范围。具体而言，具有并联连接的多个压力式流量控制器的气体供给装置和控制压力式流量控制器的动作的第三控制装置，在控制其流量的同时将由真空泵排出的期望气体供给到室，其中一个压力式流量控制器是用于控制高达提供给腔室的最大流量的10％的气体流量范围的控制器，而剩余的压力型流量控制器被制成控制其余的气体流量范围。

5. 发明授权

US07550075B2 Removal of contaminants from a fluid 失效
标题翻译：从流体中去除污染物
公开(公告)号：US07550075B2
公开(公告)日：2009-06-23
申请号：US11088339
申请日：2005-03-23
申请人： Ronald Thomas Bertram , Douglas Michael Scott
发明人： Ronald Thomas Bertram , Douglas Michael Scott
IPC分类号： B01D35/14
CPC分类号： B08B7/0021
摘要： A method and apparatus for removing contaminants from a fluid are disclosed. The fluid is introduced into a decontamination chamber such that the fluid is cooled and contaminants fall out within the decontamination chamber, producing a purified fluid. The purified fluid is then retrieved and can be used in a supercritical processing system.
摘要翻译：公开了一种从流体中除去污染物的方法和装置。将流体引入净化室，使得流体被冷却并且污染物在净化室内掉落，产生纯化的流体。然后取出纯化的流体，可以在超临界处理系统中使用。

6. 发明授权

US07407324B2 Method and apparatus for monitoring the thickness of a conductive coating 失效
标题翻译：用于监测导电涂层厚度的方法和装置
公开(公告)号：US07407324B2
公开(公告)日：2008-08-05
申请号：US11200013
申请日：2005-08-10
申请人： Jozef Brcka
发明人： Jozef Brcka
IPC分类号： G01N25/00 , G01K19/00
CPC分类号： G01B7/105
摘要： A method and apparatus for determining thickness of a metallic layer being deposited on a collector. The method includes applying an electromagnetic field to a conductive layer on the collector. Then the temperature or the change in temperature of the collector is determined. The metal thickness is determined as a function of the temperature or change in temperature. The apparatus includes a collector, a thermocouple associated with the collector, and a source of an electromagnetic field.
摘要翻译：一种用于确定沉积在集电器上的金属层厚度的方法和装置。该方法包括对集电极上的导电层施加电磁场。然后确定收集器的温度或温度变化。将金属厚度确定为温度或温度变化的函数。该装置包括收集器，与收集器相关联的热电偶和电磁场源。

7. 发明授权

US07323220B2 Gas phase growth system, method of operating the system, and vaporizer for the system 失效
标题翻译：气相生长系统，操作系统的方法和系统的蒸发器
公开(公告)号：US07323220B2
公开(公告)日：2008-01-29
申请号：US10998738
申请日：2004-11-30
申请人： Yasuhiko Kojima , Vincent Vezin , Tomohisa Hoshino
发明人： Yasuhiko Kojima , Vincent Vezin , Tomohisa Hoshino
IPC分类号： C23C16/18
CPC分类号： C23C16/18 , C23C16/4485
摘要： A method of operating a gas phase growth system is disclosed. The method includes a processing stage and a stabilizer feeding stage. In a non-limiting embodiment of the disclosure, an organometallic complex is vaporized by a vaporizer, and subsequently fed to a reaction chamber through a gas line communicating the vaporizer with the reaction chamber, whereby a film is formed on a substrate in the reaction chamber. During the stabilizer feeding stage, a stabilizer for the organometallic complex is fed in a gaseous state during normal operation of the vaporizer, wherein the stabilizer feeding stage is executed when the vaporizer is not vaporizing the organometallic complex.
摘要翻译：公开了一种操作气相生长系统的方法。该方法包括处理阶段和稳定器进料阶段。在本公开的非限制性实施方案中，有机金属络合物通过蒸发器蒸发，并且随后通过使蒸发器与反应室连通的气体管线进料到反应室，由此在反应室中的基板上形成膜。在稳定剂进料阶段期间，在汽化器的正常操作期间，有机金属配合物的稳定剂以气态进料，其中当汽化器不蒸发有机金属络合物时，执行稳定剂进料阶段。

8. 发明申请

US20070233404A1 Creating a library for measuring a damaged structure formed on a wafer using optical metrology 失效
标题翻译：使用光学测量法创建用于测量在晶圆上形成的损坏结构的库
公开(公告)号：US20070233404A1
公开(公告)日：2007-10-04
申请号：US11395636
申请日：2006-03-30
申请人： Kevin Lally , Merritt Funk , Radha Sundararajan
发明人： Kevin Lally , Merritt Funk , Radha Sundararajan
IPC分类号： G06F19/00 , G01N21/00
CPC分类号： G01N21/95607
摘要： A method of creating a library for measuring a plurality of damaged structures formed on a semiconductor wafer using optical metrology includes directing an incident beam on a first damaged structure. The first damaged structure was formed by modifying at least one process parameter in a dual damascene procedure. A diffracted beam is received from the first damaged structure. A measured diffraction signal is obtained based on the received diffracted beam. A first simulated diffraction signal is calculated. The first simulated diffraction signal corresponds to a hypothetical profile of the first damaged structure. The hypothetical profile includes an undamaged dielectric portion and a damaged dielectric portion. The measured diffraction signal is compared to the first simulated diffraction signal. If the measured diffraction signal and the first simulated diffraction signal match within a matching criterion, then the first simulated diffraction signal, the hypothetical profile of the first damaged structure, and an amount of dielectric damage corresponding to the damaged dielectric portion of the hypothetical profile are stored in a library.
摘要翻译：使用光学测量法创建用于测量形成在半导体晶片上的多个损坏结构的库的方法包括将入射光束引导到第一损坏结构上。通过在双镶嵌程序中修改至少一个工艺参数来形成第一个损坏的结构。从第一损坏结构接收衍射光束。基于接收的衍射光束获得测量的衍射信号。计算第一个模拟衍射信号。第一模拟衍射信号对应于第一损坏结构的假想轮廓。假想轮廓包括未损坏的电介质部分和损坏的电介质部分。将测量的衍射信号与第一模拟衍射信号进行比较。如果测量的衍射信号和第一模拟衍射信号在匹配标准内匹配，则第一模拟衍射信号，第一损坏结构的假想轮廓和对应于假想轮廓损坏的介质部分的介电损伤量是存储在库中。

9. 发明申请

US20070229807A1 Measuring a damaged structure formed on a wafer using optical metrology 有权
标题翻译：使用光学测量法测量在晶片上形成的损坏结构
公开(公告)号：US20070229807A1
公开(公告)日：2007-10-04
申请号：US11396214
申请日：2006-03-30
申请人： Kevin Lally , Merritt Funk , Radha Sundararajan
发明人： Kevin Lally , Merritt Funk , Radha Sundararajan
IPC分类号： G01N21/00
CPC分类号： G01N21/95607 , G01N21/4788 , G01N21/9501 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method of measuring a damaged structure formed on a semiconductor wafer using optical metrology, the method includes obtaining a measured diffraction signal from a damaged periodic structure. A hypothetical profile of the damaged periodic structure is defined. The hypothetical profile having an undamaged portion, which corresponds to an undamaged area of a first material in the damaged periodic structure, and a damaged portion, which corresponds to a damaged area of the first material in the damaged periodic structure. The undamaged portion and the damaged portion have different properties associated with them. A simulated diffraction signal is calculated for the hypothetical damaged periodic structure using the hypothetical profile. The measured diffraction signal is compared to the simulated diffraction signal. If the measured diffraction signal and the simulated diffraction signal match within a matching criterion, then a damage amount for the damaged periodic structure is established based on the damaged portion of the hypothetical profile used to calculate the simulated diffraction signal.
摘要翻译：一种使用光学测量法测量在半导体晶片上形成的损坏结构的方法，该方法包括从损坏的周期性结构获得测量的衍射信号。定义损坏的周期结构的假设剖面。具有未损坏部分的假想轮廓，其对应于损坏的周期性结构中的第一材料的未损坏区域，以及损坏部分，其对应于损坏的周期性结构中的第一材料的损坏区域。未损伤部分和损坏部分具有与它们相关联的不同性质。使用假设曲线计算假设损坏的周期性结构的模拟衍射信号。将测得的衍射信号与模拟衍射信号进行比较。如果测量的衍射信号和模拟衍射信号在匹配标准内匹配，则基于用于计算模拟衍射信号的假想轮廓的损坏部分建立损坏的周期性结构的损伤量。

10. 发明申请

US20070204959A1 SUBSTRATE PROCESSING METHOD AND MATERIAL FOR ELECTRONIC DEVICE 审中-公开
标题翻译：电子设备的基板处理方法和材料
公开(公告)号：US20070204959A1
公开(公告)日：2007-09-06
申请号：US11747289
申请日：2007-05-11
申请人： Toshio NAKANISHI , Takuya Sugawara , Seiji Matsuyama , Masaru Sasaki
发明人： Toshio NAKANISHI , Takuya Sugawara , Seiji Matsuyama , Masaru Sasaki
IPC分类号： H01L21/3065
CPC分类号： H01L21/28185 , H01L21/0217 , H01L21/02247 , H01L21/02332 , H01L21/0234 , H01L21/2236 , H01L21/28202 , H01L21/3003 , H01L21/3144 , H01L21/3185 , H01L29/513 , H01L29/518
摘要： A method of processing a for an electronic device, comprising, at least: a nitridation step (a) of supplying nitrogen radicals on the surface of the electronic device substrate, to thereby form a nitride film on the surface thereof; and a hydrogenation step (b) of supplying hydrogen radicals to the surface of the electronic device substrate. By use of this method, it is possible to recover the degradation in the electric property of an insulating film due to a turnaround phenomenon which can occur at the time of nitriding an Si substrate, etc.
摘要翻译：一种电子设备的处理方法，至少包括：在电子器件基板的表面上提供氮自由基的氮化步骤（a），从而在其表面上形成氮化物膜; 以及将氢自由基供给到电子器件基板的表面的氢化步骤（b）。通过使用该方法，由于在Si衬底等的氮化时可能发生的周转现象，可以恢复绝缘膜的电性能的劣化。

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