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1. 发明授权

US08383375B2 Thermostable gluconate dehydratase and use thereof 有权
标题翻译：高温葡萄糖酸脱水酶及其用途
公开(公告)号：US08383375B2
公开(公告)日：2013-02-26
申请号：US12910768
申请日：2010-10-22
申请人： Seonghun Kim , Sun Bok Lee
发明人： Seonghun Kim , Sun Bok Lee
IPC分类号： C12P7/58 , C12P7/42 , C12P7/50
CPC分类号： C12N9/88 , C12P7/58 , C12Y402/01039
摘要： The present invention relates to a novel thermostable gluconate dehydratase from the thermoacidophilic archaeon Sulfolobus solfataricus, a coding sequence, and an expression system. The gluconate dehydratase has a molecular weight of about 320,000 to 380,000 daltons as the native protein, and about 40,000 to 50,000 daltons as the monomer protein, and catalyzes the dehydration reaction of aldonic acids to 2-keto-3-deoxy derivatives at temperatures of less than 120° C. The gluconate dehydratase can be produced from native or recombinant host cells and thereby used in the pharmaceutical, agricultural, and other industries.
摘要翻译：本发明涉及一种来自热嗜性古细菌Sulfolobus solfataricus的新型耐热葡萄糖酸盐脱水酶，编码序列和表达系统。葡萄糖酸脱水酶的天然蛋白质的分子量约为320,000至380,000道尔顿，单体蛋白为约40,000至50,000道尔顿，并在较少的温度下催化醛糖酸与2-酮-3-脱氧衍生物的脱水反应超过120℃。葡萄糖酸脱水酶可由天然或重组宿主细胞产生，从而用于制药，农业和其他工业。

2. 发明申请

US20120146081A1 GaN COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译： GaN化合物半导体发光元件及其制造方法
公开(公告)号：US20120146081A1
公开(公告)日：2012-06-14
申请号：US13399474
申请日：2012-02-17
申请人： Jong Lam LEE
发明人： Jong Lam LEE
IPC分类号： H01L33/60
CPC分类号： H01L33/40 , H01L33/0079 , H01L33/32 , H01L33/387 , H01L33/405 , H01L33/44
摘要： The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a metallic protective film layer with a thickness of at least 10 microns may be formed on the lateral and/or bottom sides of the vertical GaN LED. Further, a metallic substrate may be used instead of a sapphire substrate. A metallic support layer may be formed to protect the element from being distorted or damaged. Furthermore, a P-type electrode may be partially formed on a P—GaN layer in a mesh form.
摘要翻译：本发明涉及一种氮化镓（GaN）化合物半导体发光元件（LED）及其制造方法。本发明提供一种能够通过金属保护膜层和金属支撑层改善水平LED的特性的垂直GaN LED。根据本发明，可以在垂直GaN LED的横向和/或底侧上形成厚度至少为10微米的金属保护膜层。此外，可以使用金属基板代替蓝宝石基板。可以形成金属支撑层以保护元件不被扭曲或损坏。此外，P型电极可以以网状形式部分地形成在P-GaN层上。

3. 发明申请

US20120111801A1 Near-Field Photocatalyst Including Zinc Oxide Nanowire 审中-公开
标题翻译：包括氧化锌纳米线的近场光催化剂
公开(公告)号：US20120111801A1
公开(公告)日：2012-05-10
申请号：US12064816
申请日：2005-08-31
申请人： Gyu-chul Yi , Motoichi Ohtsu , Takashi Yatsui
发明人： Gyu-chul Yi , Motoichi Ohtsu , Takashi Yatsui
IPC分类号： B01J35/02 , B01J19/12 , C02F1/30 , B01J23/06 , C01B3/00 , B82Y30/00
CPC分类号： B01J35/004 , B01D53/885 , B01D2255/802 , B01J23/06 , B01J35/06 , B01J37/0238 , B82Y30/00 , C01B3/042 , C01G9/006 , C01G9/02 , C01P2004/16 , C02F1/32 , C02F1/725 , C02F2305/10 , Y02E60/324 , Y02E60/364
摘要： Disclosed is a near-field photocatalyst using a ZnO (ZnO) nanowire. The photocatalyst is advantageous in that low-priced zinc is used instead of titanium, conventionally used as a photocatalyst to reduce expenses, and that it is possible to obtain overvoltage which is sufficient to generate hydrogen using an optical near field formed around an end of a ZnO nanowire without the application of additional external voltage, thus the use of a costly electrode, such as platinum, is avoided and a process is simplified.
摘要翻译：公开了使用ZnO（ZnO）纳米线的近场光催化剂。光催化剂的优点在于，使用低价锌代替钛，通常用作光催化剂以降低成本，并且可以获得足够的过电压，该过电压是使用形成在 ZnO纳米线不施加额外的外部电压，因此避免了昂贵的电极（例如铂）的使用，并且简化了工艺。

4. 发明申请

US20110278628A1 GaN COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译： GaN化合物半导体发光元件及其制造方法
公开(公告)号：US20110278628A1
公开(公告)日：2011-11-17
申请号：US13192848
申请日：2011-07-28
申请人： Jong Lam LEE
发明人： Jong Lam LEE
IPC分类号： H01L33/60
CPC分类号： H01L33/40 , H01L33/0079 , H01L33/32 , H01L33/387 , H01L33/405 , H01L33/44
摘要： The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact. Furthermore, a P-type electrode is partially formed on a P-GaN layer in a mesh form to thereby maximize the emission of photons generated in the active layer toward the N-GaN layer.
摘要翻译：本发明涉及一种氮化镓（GaN）化合物半导体发光元件（LED）及其制造方法。本发明提供一种能够通过金属保护膜层和金属支撑层改善水平LED的特性的垂直GaN LED。根据本发明，在垂直GaN LED的侧面和/或底面上形成厚度至少为10微米的厚金属保护膜层，以保护元件免受外部冲击并容易地分离芯片。此外，当元件被操作时，使用金属基板代替蓝宝石基板以有效地将产生的热量释放到外部，使得LED可适用于大功率应用，并且具有改善的光输出特性的元件也可以制造。形成金属支撑层以保护元件免于由于冲击而变形或损坏。此外，P型电极以网格形式部分地形成在P-GaN层上，从而最大限度地发挥在有源层中朝向N-GaN层产生的光子。

5. 发明授权

US08058451B2 Hydroxycucurbituril derivatives, their preparation methods and uses 有权
标题翻译：羟基葫芦脲衍生物，其制备方法和用途
公开(公告)号：US08058451B2
公开(公告)日：2011-11-15
申请号：US12138883
申请日：2008-06-13
申请人： Ki-Moon Kim , Sang-Yong Jon , Narayanan Selvapalam , Dong-Hyun Oh
发明人： Ki-Moon Kim , Sang-Yong Jon , Narayanan Selvapalam , Dong-Hyun Oh
IPC分类号： C07D403/02
CPC分类号： C07D487/22 , Y02C10/08
摘要： Provided are hydroxycucurbituril derivatives, their preparation methods and uses. The hydroxycucurbituril derivative is easy to further functionalize with enhanced solubility in common solvents, thereby providing wider applications.
摘要翻译：提供羟ucurituril衍生物，其制备方法和用途。羟基葫芦脲衍生物易于进一步官能化，在普通溶剂中的溶解度增加，从而提供更广泛的应用。

6. 发明授权

US08058413B2 Molecular transporters based on sugar and its analogues and processes for the preparation thereof 有权
标题翻译：基于糖及其类似物的分子转运蛋白及其制备方法
公开(公告)号：US08058413B2
公开(公告)日：2011-11-15
申请号：US12860538
申请日：2010-08-20
申请人： Sung-Kee Chung , Kaustabh Kumar Maiti , Woo Sirl Lee , Ock-Youm Jeon , Seok-Ho Lee
发明人： Sung-Kee Chung , Kaustabh Kumar Maiti , Woo Sirl Lee , Ock-Youm Jeon , Seok-Ho Lee
IPC分类号： C07H1/00 , A01N43/04 , A61K31/70 , A61B5/055
CPC分类号： C07H15/04 , Y02P20/55
摘要： The inventive molecular transporter compound shows significantly high permeability through a biological membrane such as a plasma membrane, nuclear membrane and blood-brain barrier, and accordingly, can be effectively used in delivering various biologically active molecules.
摘要翻译：本发明的分子转运体化合物通过诸如质膜，核膜和血脑屏障的生物膜显示出显着高的渗透性，因此可以有效地用于递送各种生物活性分子。

7. 发明申请

US20110210363A1 METHOD FOR FORMING OHMIC ELECTRODE AND SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
标题翻译：形成OHMIC电极和半导体发光元件的方法
公开(公告)号：US20110210363A1
公开(公告)日：2011-09-01
申请号：US13102589
申请日：2011-05-06
申请人： Jong-Lam LEE
发明人： Jong-Lam LEE
IPC分类号： H01L33/60
CPC分类号： H01L33/405 , H01L33/0095 , H01L33/32
摘要： The present invention relates to a method of forming an ohmic electrode in a semiconductor light emitting element, comprising: forming a semiconductor layer having a light emitting structure on a substrate, sequentially laminating a bonding layer, a reflective layer and a protective layer on the semiconductor layer, and forming an ohmic electrode by performing a heat treatment process to form ohmic bonding between the semiconductor layer and the bonding layer and to form an oxide film on at least a portion of the protective layer; and a semiconductor light emitting element using the ohmic electrode. According to the present invention, since a reflective layer is formed of Ag, Al and an alloy thereof with excellent light reflectivity, the light availability is enhanced. Further, since contact resistance between a semiconductor layer and a bonding layer is small, it is easy to apply large current for high power.
摘要翻译：本发明涉及一种在半导体发光元件中形成欧姆电极的方法，包括：在衬底上形成具有发光结构的半导体层，在半导体上依次层叠结合层，反射层和保护层并通过进行热处理工艺形成欧姆电极，以在半导体层和接合层之间形成欧姆接合，并在保护层的至少一部分上形成氧化膜; 以及使用欧姆电极的半导体发光元件。根据本发明，由于反射层由具有优异的光反射率的Ag，Al及其合金形成，所以光可用性得到提高。此外，由于半导体层和接合层之间的接触电阻小，因此容易施加大电流用于大功率。

8. 发明申请

US20110191908A9 REGULATOR FOR FLOWERING TIME, TRANSGENIC PLANT TRANSFORMED WITH THE SAME, AND METHOD FOR REGULATING FLOWERING TIME 失效
标题翻译：用于花费时间的调节器，与之相容的转基因植物以及用于调节花费时间的方法
公开(公告)号：US20110191908A9
公开(公告)日：2011-08-04
申请号：US11767193
申请日：2007-06-22
申请人： GYNHEUNG AN , SHINYOUNG LEE , DONG-HOON JEONG , JIHYE YOO , CHOONG-HWAN RYU , JONG-SEONG JEON , SUNG-RYUL KIM , YOUNG-OCK KIM , JOONYUL KIM , SUYOUNG AN , JONG-JIN HAN , MIN-JUNG HAN
发明人： GYNHEUNG AN , SHINYOUNG LEE , DONG-HOON JEONG , JIHYE YOO , CHOONG-HWAN RYU , JONG-SEONG JEON , SUNG-RYUL KIM , YOUNG-OCK KIM , JOONYUL KIM , SUYOUNG AN , JONG-JIN HAN , MIN-JUNG HAN
IPC分类号： C12N15/82 , C12N15/29 , A01H5/00 , A01H1/06 , C07K14/00
CPC分类号： C07K14/415 , C12N15/8261 , C12N15/827 , Y02A40/146
摘要： The present invention relates to a flowering-time and/or stem elongation regulator isolated from rice, which is selected from OsMADS50, OsMADSS1, OsMADS56, OsMADS14, OsTRX1, OsVIN1, OsCOL4 and OsCOLS, a DNA construct containing the regulator, a transgenic plant, a part thereof, and plant cell transformed with the DNA construct, and method to control flowering-time and/or stem elongation using the regulator. In the present invention, the flowering-time and/or stem elongation can be controlled, and thereby, various agricultural benefits obtained.
摘要翻译：本发明涉及从水稻分离的开花时间和/或茎伸长调节剂，其选自OsMADS50，OsMADSS1，OsMADS56，OsMADS14，OsTRX1，OsVIN1，OsCOL4和OsCOLS，含有调节剂的DNA构建体，转基因植物，其部分和用DNA构建体转化的植物细胞，以及使用调节剂来控制开花时间和/或茎伸长的方法。在本发明中，可以控制开花时间和/或茎伸长，从而获得各种农业益处。

9. 发明申请

US20110165766A1 T-GATE FORMING METHOD FOR HIGH ELECTRON MOBILITY TRANSISTOR AND GATE STRUCTURE THEREOF 审中-公开
标题翻译：用于高电子移动性晶体管的门极形成方法及其门结构
公开(公告)号：US20110165766A1
公开(公告)日：2011-07-07
申请号：US13051277
申请日：2011-03-18
申请人： Yoon-Ha JEONG , Kang-Sung LEE , Young-Su KIM , Yun-Ki HONG , Sung-Woo JUNG
发明人： Yoon-Ha JEONG , Kang-Sung LEE , Young-Su KIM , Yun-Ki HONG , Sung-Woo JUNG
IPC分类号： H01L21/28
CPC分类号： H01L29/7787 , H01L29/42316 , H01L29/66462
摘要： A T-gate forming method for a high electron mobility transistor includes the steps of: coating a first, a second and a third resist, each having an electron beam sensitivity different from each other, on a semiconductor substrate; performing a first exposure process by using an electron beam on the semiconductor substrate and then selectively developing the third resist; defining a gate head area by selectively developing the second resist to have a developed width wider than that of the third resist; performing a second exposure process by using an electron beam on the semiconductor substrate and then selectively developing the first resist in a bent shape at a temperature lower than in the development of the second and the third steps; and depositing metallic materials on the resists and then removing them to form a T-gate.
摘要翻译：一种用于高电子迁移率晶体管的T形栅形成方法包括以下步骤：在半导体衬底上涂覆各自具有彼此不同的电子束灵敏度的第一，第二和第三抗蚀剂; 通过在半导体衬底上使用电子束然后选择性地显影第三抗蚀剂来执行第一曝光处理; 通过选择性地显影所述第二抗蚀剂来限定栅极头区域，以具有比所述第三抗蚀剂宽的显影宽度; 通过在半导体衬底上使用电子束进行第二曝光处理，然后在低于第二和第三步骤的显影的温度下，以弯曲形状选择性地显影第一抗蚀剂; 并将金属材料沉积在抗蚀剂上，然后去除它们以形成T形栅极。

10. 发明授权

US07903785B2 Method of bright-field imaging using X-rays 有权
标题翻译：使用X射线的明场成像方法
公开(公告)号：US07903785B2
公开(公告)日：2011-03-08
申请号：US12373278
申请日：2006-07-12
申请人： Jung Ho Je , Jae Mok Yi
发明人： Jung Ho Je , Jae Mok Yi
IPC分类号： G01N23/201
CPC分类号： G01N23/20083 , G01N2223/1003 , G01N2223/413 , G01N2223/646
摘要： Provided is a method of bright-field imaging using x-rays in a sample to reveal lattice defects as well as structural inhomogeneities, the method comprising: (a) disposing a sample on a holder in the Laue transmission geometry and setting the sample to a single reflection in the Bragg diffraction; (b) projecting a beam of monochromatic x-rays on the sample; and (c) obtaining transmitted radiographic images and reversed diffracted images of the projected beam of monochromatic x-rays by the sample, respectively.
摘要翻译：提供了一种利用样品中的X射线进行亮场成像以显示晶格缺陷以及结构不均匀性的方法，该方法包括：（a）在Laue透射几何中将样品放置在支架上并将样品设置为布拉格衍射中的单反射; （b）将一束单色x射线投射在样品上; 和（c）分别通过样本获得透射的放射线照相图像和反射衍射的单色X射线束的衍射图像。

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