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    • 7. 发明授权
    • GaN compound semiconductor light emitting element and method of manufacturing the same
    • GaN化合物半导体发光元件及其制造方法
    • US07964884B2
    • 2011-06-21
    • US11577710
    • 2005-10-21
    • Jong-Lam Lee
    • Jong-Lam Lee
    • H01L33/00
    • H01L33/40H01L33/0079H01L33/32H01L33/387H01L33/405H01L33/44
    • The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact. Furthermore, a P-type electrode is partially formed on a P—GaN layer in a mesh form to thereby maximize the emission of photons generated in the active layer toward the N—GaN layer.
    • 本发明涉及一种氮化镓(GaN)化合物半导体发光元件(LED)及其制造方法。 本发明提供一种能够通过金属保护膜层和金属支撑层改善水平LED的特性的垂直GaN LED。 根据本发明,在垂直GaN LED的侧面和/或底面上形成厚度至少为10微米的厚金属保护膜层,以保护元件免受外部冲击并容易地分离芯片。 此外,当元件被操作时,使用金属基板代替蓝宝石基板来有效地将产生的热量释放到外部,使得LED可以适合于大功率应用,并且具有改善的光输出特性的元件也可以 制造。 形成金属支撑层以保护元件免于由于冲击而变形或损坏。 此外,P型电极以网格形式部分地形成在P-GaN层上,从而最大限度地发挥在有源层中朝向N-GaN层产生的光子。
    • 9. 发明授权
    • Digitally controlled oscillator with the wide operation range
    • 数字控制振荡器具有较宽的工作范围
    • US07932766B2
    • 2011-04-26
    • US12364173
    • 2009-02-02
    • Kwang Hee ChoiHong June Park
    • Kwang Hee ChoiHong June Park
    • H03H11/26
    • H03L7/10H03K3/0315H03K2005/00058H03K2005/00221H03L7/0995H03L7/0998H03L2207/06
    • There is provided a digitally controlled oscillator, which is capable of widening its operation range with maintaining its resolution and the maximum frequency at which it operates. The digitally controlled oscillator includes a phase compensation block, a coarse block, and a fine block. The phase compensation block 510 generating a PLL signal PLLCLK and a first clock signal CLK1 which has the same phase and frequency as the PLL signal, in response to a phase control signal DISABLE and a fourth clock signal CLK4. The coarse block 520 generating a second clock signal CLK2 and a third clock signal CLK3 which results from delaying the PLL signal PLLCLK and the first clock signal CLK1 for a given time, in response to a m(integer)-bit coarse A control signal COAR_A and an (m−1)-bit coarse B control signal COAR_B. The fine block generating the fourth clock signal CLK4 by applying interpolation to the second clock signal CLK2 and the third clock signal CLK3 in response to an n(integer)-bit first fine control signal FCB and a n-bit second fine control signal FC.
    • 提供了数字控制的振荡器,其能够在保持其分辨率和操作的最大频率的情况下扩大其操作范围。 数字控制振荡器包括相位补偿块,粗块和精细块。 响应于相位控制信号DISABLE和第四时钟信号CLK4,相位补偿块510产生PLL信号PLLCLK和与PLL信号具有相同相位和频率的第一时钟信号CLK1。 粗块520产生第二时钟信号CLK2和第三时钟信号CLK3,其响应于am(整数)位粗A控制信号COAR_A,延迟PLL信号PLLCLK和第一时钟信号CLK1给定时间, (m-1)位粗B控制信号COAR_B。 精细块响应于n(整数)位第一精细控制信号FCB和n位第二精细控制信号FC,通过对第二时钟信号CLK2和第三时钟信号CLK3施加内插来产生第四时钟信号CLK4。
    • 10. 发明授权
    • T-gate forming method for high electron mobility transistor and gate structure thereof
    • 用于高电子迁移率晶体管的T型栅极形成方法及其栅极结构
    • US07932540B2
    • 2011-04-26
    • US11700946
    • 2007-02-01
    • Yoon-Ha JeongKang-Sung LeeYoung-Su KimYun-Ki HongSung-Woo Jung
    • Yoon-Ha JeongKang-Sung LeeYoung-Su KimYun-Ki HongSung-Woo Jung
    • H01L29/66
    • H01L29/7787H01L29/42316H01L29/66462
    • A T-gate forming method for a high electron mobility transistor includes the steps of: coating a first, a second and a third resist, each having an electron beam sensitivity different from each other, on a semiconductor substrate; performing a first exposure process by using an electron beam on the semiconductor substrate and then selectively developing the third resist; defining a gate head area by selectively developing the second resist to have a developed width wider than that of the third resist; performing a second exposure process by using an electron beam on the semiconductor substrate and then selectively developing the first resist in a bent shape at a temperature lower than in the development of the second and the third steps; and depositing metallic materials on the resists and then removing them to form a T-gate.
    • 一种用于高电子迁移率晶体管的T形栅形成方法包括以下步骤:在半导体衬底上涂覆各自具有彼此不同的电子束灵敏度的第一,第二和第三抗蚀剂; 通过在半导体衬底上使用电子束然后选择性地显影第三抗蚀剂来执行第一曝光处理; 通过选择性地显影所述第二抗蚀剂来限定栅极头区域,以具有比所述第三抗蚀剂宽的显影宽度; 通过在半导体衬底上使用电子束进行第二曝光处理,然后在低于第二和第三步骤的显影的温度下,以弯曲形状选择性地显影第一抗蚀剂; 并将金属材料沉积在抗蚀剂上,然后去除它们以形成T形栅极。