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    • 3. 发明授权
    • Characterization of three-dimensional distribution of defects by X-ray topography
    • 通过X射线形貌表征缺陷的三维分布
    • US07620149B2
    • 2009-11-17
    • US12087402
    • 2006-01-06
    • Jung Ho JeJae Mok Yi
    • Jung Ho JeJae Mok Yi
    • G01N23/207
    • G01N23/046G01N2223/419
    • Provided is a method of determining a three-dimensional distribution of structural defects in a single crystal material, the method comprising: (a) disposing a single crystal sample on a holder, the sample being set to a symmetric reflection in the Bragg Geometry; (b) projecting a beam of incident x-rays on a predetermined crystal plane in the sample and reflecting the x-rays while the sample is azimuthally rotating with respect to an normal axis, the normal axis being perpendicular to the predetermined crystal plane; (c) obtaining geometrical measured values of a two-dimensional configuration of defects on the detector plane of a CCD detector; and (d) determining the three-dimensional distribution of the defects in the sample by formulating a geometrical relation between a three-dimensional configuration of defects on the sample and the geometrical measured values of the two-dimensional configuration of defects on the detector plane.
    • 提供了一种确定单晶材料中的结构缺陷的三维分布的方法,所述方法包括:(a)将单晶样品放置在保持器上,所述样品在布拉格几何中被设置为对称反射; (b)在样品相对于法线轴方位角旋转时,将入射的X射线束投射在样品中的预定晶面上并反射X射线,法线轴线垂直于预定晶面; (c)获得CCD检测器的检测器平面上缺陷的二维构型的几何测量值; 以及(d)通过配置样品上的缺陷的三维构型与检测器平面上缺陷的二维构型的几何测量值之间的几何关系来确定样品中的缺陷的三维分布。
    • 4. 发明申请
    • Characterization of Three-Dimensional Distribution of Defects by X-Ray Topography
    • X射线地形三维缺陷分布特征
    • US20090034681A1
    • 2009-02-05
    • US12087402
    • 2006-01-06
    • Jung Ho JeJae Mok Yi
    • Jung Ho JeJae Mok Yi
    • G01N23/207
    • G01N23/046G01N2223/419
    • Provided is a method of determining a three-dimensional distribution of structural defects in a single crystal material, the method comprising: (a) disposing a single crystal sample on a holder, the sample being set to a symmetric reflection in the Bragg Geometry; (b) projecting a beam of incident x-rays on a predetermined crystal plane in the sample and reflecting the x-rays while the sample is azimuthally rotating with respect to an normal axis, the normal axis being perpendicular to the predetermined crystal plane; (c) obtaining geometrical measured values of a two-dimensional configuration of defects on the detector plane of a CCD detector; and (d) determining the three-dimensional distribution of the defects in the sample by formulating a geometrical relation between a three-dimensional configuration of defects on the sample and the geometrical measured values of the two-dimensional configuration of defects on the detector plane.
    • 提供了一种确定单晶材料中的结构缺陷的三维分布的方法,所述方法包括:(a)将单晶样品放置在保持器上,所述样品在布拉格几何中被设置为对称反射; (b)在样品相对于法线轴方位角旋转时,将入射的X射线束投射在样品中的预定晶面上并反射X射线,法线轴线垂直于预定晶面; (c)获得CCD检测器的检测器平面上缺陷的二维构型的几何测量值; 以及(d)通过配置样品上的缺陷的三维构型与检测器平面上缺陷的二维构型的几何测量值之间的几何关系来确定样品中的缺陷的三维分布。