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1. 发明申请

US20110165766A1 T-GATE FORMING METHOD FOR HIGH ELECTRON MOBILITY TRANSISTOR AND GATE STRUCTURE THEREOF 审中-公开
标题翻译：用于高电子移动性晶体管的门极形成方法及其门结构
公开(公告)号：US20110165766A1
公开(公告)日：2011-07-07
申请号：US13051277
申请日：2011-03-18
申请人： Yoon-Ha JEONG , Kang-Sung LEE , Young-Su KIM , Yun-Ki HONG , Sung-Woo JUNG
发明人： Yoon-Ha JEONG , Kang-Sung LEE , Young-Su KIM , Yun-Ki HONG , Sung-Woo JUNG
IPC分类号： H01L21/28
CPC分类号： H01L29/7787 , H01L29/42316 , H01L29/66462
摘要： A T-gate forming method for a high electron mobility transistor includes the steps of: coating a first, a second and a third resist, each having an electron beam sensitivity different from each other, on a semiconductor substrate; performing a first exposure process by using an electron beam on the semiconductor substrate and then selectively developing the third resist; defining a gate head area by selectively developing the second resist to have a developed width wider than that of the third resist; performing a second exposure process by using an electron beam on the semiconductor substrate and then selectively developing the first resist in a bent shape at a temperature lower than in the development of the second and the third steps; and depositing metallic materials on the resists and then removing them to form a T-gate.
摘要翻译：一种用于高电子迁移率晶体管的T形栅形成方法包括以下步骤：在半导体衬底上涂覆各自具有彼此不同的电子束灵敏度的第一，第二和第三抗蚀剂; 通过在半导体衬底上使用电子束然后选择性地显影第三抗蚀剂来执行第一曝光处理; 通过选择性地显影所述第二抗蚀剂来限定栅极头区域，以具有比所述第三抗蚀剂宽的显影宽度; 通过在半导体衬底上使用电子束进行第二曝光处理，然后在低于第二和第三步骤的显影的温度下，以弯曲形状选择性地显影第一抗蚀剂; 并将金属材料沉积在抗蚀剂上，然后去除它们以形成T形栅极。

2. 发明申请

US20110175677A1 DISTRIBUTED DOHERTY POWER AMPLIFIER 有权
标题翻译：分布式DOHERTY功率放大器
公开(公告)号：US20110175677A1
公开(公告)日：2011-07-21
申请号：US12964206
申请日：2010-12-09
申请人： Yoon-Ha JEONG , Mun-Woo Lee , Yong-Sub Lee
发明人： Yoon-Ha JEONG , Mun-Woo Lee , Yong-Sub Lee
IPC分类号： H03F1/07
CPC分类号： H03F3/602 , H03F1/0288 , H03F3/195 , H03F3/211 , H03F3/24 , H03F2200/222 , H03F2200/387 , H03F2200/423 , H03F2200/543 , H03F2203/21106 , H03F2203/21142
摘要： Provided is a distributed Doherty power amplifier exhibiting high efficiency and linearity at a wide range of bandwidths, the distributed Doherty power amplifier including a first amplifier; a second amplifier, which is connected to the first amplifier in parallel; a first shifting unit, which is interconnected between the input of the first amplifier and the input of the second amplifier and inverses the phase of the input of the second amplifier; and a second shifting unit, which is interconnected between the output of the first amplifier and the output of the second amplifier and inverses the phase of the output of the second amplifier, wherein the first amplifier and the second amplifier are Doherty power amplifiers, and each of the Doherty power amplifiers includes a carrier amplifier and a peaking amplifier, which are connected in parallel.
摘要翻译：提供了一种分布式Doherty功率放大器，在宽范围的带宽下表现出高效率和线性度，分布式Doherty功率放大器包括第一放大器; 第二放大器，并联连接到第一放大器; 第一移位单元，其互连在第一放大器的输入端和第二放大器的输入端之间，并反转第二放大器输入端的相位; 以及第二移位单元，其互连在第一放大器的输出端和第二放大器的输出端之间，并且反转第二放大器的输出的相位，其中第一放大器和第二放大器是多赫蒂功率放大器，的多赫蒂功率放大器包括并联的载波放大器和峰值放大器。

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