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1. 发明授权

US08187484B2 Down-stream plasma etching with deflectable radical stream 失效
标题翻译：下游等离子体蚀刻具有可偏转的自由基流
公开(公告)号：US08187484B2
公开(公告)日：2012-05-29
申请号：US12083138
申请日：2005-10-05
申请人： Jeff Alistair Hill
发明人： Jeff Alistair Hill
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01J37/32357 , H01J37/3244
摘要： The invention relates to a process for etching a substrate (3) in an etching chamber (1) with a plasma ignited outside of the etching chamber (1). The process is characterized in that during the etching process at least temporarily at least one gas jet (10) is directed from the side to the radical stream (7) which is directed towards the substrate (3). Furthermore the invention relates to an etching chamber for etching of a substrate (3) with a substrate holder (2) and a plasma source (4) remote to the substrate holder (2), which is characterized in that between the substrate holder (2) and the plasma source (4) at least one nozzle (9) for lateral introduction of a gas jet (10) into the etching chamber (1) is provided. With this invention the distribution of the active species on the surface of a substrate can be easily influenced.
摘要翻译：本发明涉及一种用蚀刻室（1）内的等离子体点蚀蚀刻室（1）中的衬底（3）的方法。该方法的特征在于，在蚀刻过程期间，至少暂时将至少一个气体射流（10）从侧面引导至指向基底（3）的自由基流（7）。此外，本发明涉及一种用于用衬底保持器（2）蚀刻衬底（3）和远离衬底保持器（2）的等离子体源（4）的蚀刻室，其特征在于，在衬底保持器（2））和等离子体源（4），提供用于将气体射流（10）侧向引入蚀刻室（1）的至少一个喷嘴（9）。通过本发明，可以容易地影响活性物质在基材表面上的分布。

2. 发明授权

US11965267B2 Method for pulling a cylindrical crystal from a melt 有权
公开(公告)号：US11965267B2
公开(公告)日：2024-04-23
申请号：US17310315
申请日：2020-01-24
申请人： PVA TePla AG
发明人： Andreas Muehe
IPC分类号： C30B15/14 , C30B15/20 , C30B15/30 , C30B29/06
CPC分类号： C30B15/203 , C30B15/14 , C30B15/30 , C30B29/06
摘要： A method for pulling a cylindrical crystal from a melt by a crystal pulling unit includes measuring an actual value of a diameter of the crystal at a surface of the melt, comparing the actual value with a setpoint value for the diameter of the crystal, and setting a height of the annular gap as a function of a deviation between the actual value and the setpoint value using a first controller which has a first readjustment time.

3. 发明公开

US20240376633A1 PVT-METHOD AND DEVICE FOR PRODUCING SINGLE CRYSTALS IN A SAFE MANNER WITH REGARD TO THE PROCESS 审中-公开
公开(公告)号：US20240376633A1
公开(公告)日：2024-11-14
申请号：US18690530
申请日：2022-09-16
申请人： PVA TEPLA AG
发明人： Michael SCHÖLER , Lorenz VOGEL , Karsten VIEHMANN , Tomas BAUMECKER
IPC分类号： C30B23/00 , C23C14/06 , C23C14/24 , C23C14/54 , C30B23/06 , C30B29/36
CPC分类号： C30B23/002 , C23C14/0635 , C23C14/24 , C23C14/54 , C30B23/06 , C30B29/36
摘要： A PVT method is utilized for production of single crystals in an apparatus, which comprises a growth cell, a process chamber in which the growth cell is located and a heating device surrounding the process chamber for heating the growth cell. In this method, a source material and a seed are introduced into the growth cell, and the process chamber is filled with a process gas and the growth cell is heated, causing the source material to sublimated and resublimated at the seed. An apparatus designed for production of single crystals using the PVT method includes a highly heatable growth cell for accommodation of a source material and a seed, a process chamber accommodating the growth cell with a connection to a process gas source for filling it with a process gas, and a heating device for heating the growth cell.

4. 发明申请

US20230040130A1 Crystal Support and Crystal Growing Plant Having Such a Crystal Support 有权
公开(公告)号：US20230040130A1
公开(公告)日：2023-02-09
申请号：US17791633
申请日：2021-01-11
申请人： PVA TePla AG
发明人： Hans-Juergen AHLBORN
IPC分类号： C30B15/32 , C30B15/30
摘要： A crystal support for a crystal pulling system includes two catches that have a respective retaining jaw that is placeable against a thickened neck portion of a crystal. The two catches are moveable into a bearing position in which the two catches bear on the thickened neck portion and into a releasing position in which the two catches are away from the thickened neck portion. In the bearing position, respective contact points of each retaining jaw at which the retaining jaws bear on the thickened neck portion are located on respective sides of a parting plane. The parting plane extends at an angle to at least one of the pivot axes of the catches and, in the bearing position, the respective contact points of each retaining jaw are located on both sides of a crystal plane that extends through an axis of the crystal and parallel to the pivot axes.

5. 发明授权

US10618048B2 Sample container for receiving small-volume liquid samples 有权
公开(公告)号：US10618048B2
公开(公告)日：2020-04-14
申请号：US15830275
申请日：2017-12-04
申请人： PVA TePla AG
发明人： Robert Beikler
IPC分类号： B01L3/00 , G01N1/38 , G01N1/40
CPC分类号： B01L3/508 , B01L3/502 , G01N1/38 , G01N1/40 , G01N1/4022 , B01L3/567 , B01L2300/04 , B01L2300/049 , B01L2300/06
摘要： The present invention relates to a sample container for receiving small-volume liquid samples, preferably samples obtained by vapor phase decomposition, wherein the container has an upwardly open receiving region. In accordance with the invention, the receiving region has an outflow opening at its lowest point that is reversibly closed in a liquid-tight manner by an actuator having a closure surface.

6. 发明申请

US20230118379A1 HIGH PRECISION VPD-DC SCAN 有权
公开(公告)号：US20230118379A1
公开(公告)日：2023-04-20
申请号：US17941032
申请日：2022-09-09
申请人： PVA TePla AG
发明人： Robert BEIKLER , William MANDE , Walter BOEHME
IPC分类号： G01N21/95 , G01N35/10 , H01L21/67
摘要： The invention relates to a method and system for performing VPD-DC on wafer surfaces, wherein the pipette substitutes for the function of the scan tube and is operated such that a bulge of scanning liquid protrudes from the pipette channel and contacts the wafer surface for scanning.

7. 发明申请

US20220098755A1 Method for Pulling a Cylindrical Crystal From a Melt 有权
公开(公告)号：US20220098755A1
公开(公告)日：2022-03-31
申请号：US17310315
申请日：2020-01-24
申请人： PVA TePla AG
发明人： Andreas MUEHE
IPC分类号： C30B15/20 , C30B15/14 , C30B15/30 , C30B29/06
摘要： A method for pulling a cylindrical crystal from a melt by a crystal pulling unit includes measuring an actual value of a diameter of the crystal at a surface of the melt, comparing the actual value with a setpoint value for the diameter of the crystal, and setting a height of the annular gap as a function of a deviation between the actual value and the setpoint value using a first controller which has a first readjustment time.

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