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1. 发明申请

US20180127272A1 REMOVAL OF MOISTURE FROM HYDRAZINE 审中-公开
公开(公告)号：US20180127272A1
公开(公告)日：2018-05-10
申请号：US15806938
申请日：2017-11-08
申请人： Matheson Tri-Gas, Inc.
发明人： Hideharu Shimizu , Mark Raynor , Daniel Tempel , Robin Gardiner , Daniel Alvarez, JR.
IPC分类号： C01B21/16 , B01J20/04 , B01J20/26 , B01J20/10 , B01J20/08 , B01J20/28 , B01J20/282 , B01J20/283 , B01J20/284 , B01J20/285 , B01D53/26 , B01D53/28
CPC分类号： C01B21/16 , B01D53/261 , B01D53/263 , B01D53/28 , B01D2251/30 , B01D2251/302 , B01D2251/304 , B01D2251/306 , B01D2251/402 , B01D2251/404 , B01D2251/406 , B01D2251/408 , B01D2252/30 , B01D2253/104 , B01D2253/106 , B01D2253/1085 , B01D2253/112 , B01D2253/1122 , B01D2253/1124 , B01D2253/306 , B01D2253/311 , B01D2256/00 , B01J20/04 , B01J20/041 , B01J20/08 , B01J20/103 , B01J20/26 , B01J20/28061 , B01J20/28064 , B01J20/28071 , B01J20/28073 , B01J20/28076 , B01J20/282 , B01J20/283 , B01J20/284 , B01J20/285 , B01J2220/52 , C01P2006/82
摘要： The present invention generally relates to the field of gas and liquid phase desiccation. In particular, the present invention relates to methods for removing moisture (and hence oxygen precursors) from hydrazine, thereby providing a high purity source gas suitable for use in vapor deposition processes, such as but not limited to, chemical vapor deposition (CVD) or an atomic layer deposition (ALD).

2. 发明授权

US08759200B2 Methods and apparatus for selective epitaxy of Si-containing materials and substitutionally doped crystalline Si-containing material 有权
标题翻译：含Si材料和替代掺杂结晶含Si材料的选择性外延的方法和装置
公开(公告)号：US08759200B2
公开(公告)日：2014-06-24
申请号：US13135031
申请日：2011-06-23
申请人： Terry Arthur Francis , Satoshi Hasaka , Paul David Brabant , Robert Torres, Jr. , Hong He , Alexander Reznicek , Thomas N. Adam , Devendra K. Sadana
发明人： Terry Arthur Francis , Satoshi Hasaka , Paul David Brabant , Robert Torres, Jr. , Hong He , Alexander Reznicek , Thomas N. Adam , Devendra K. Sadana
IPC分类号： H01L21/205
CPC分类号： H01L21/02532 , C23C16/30 , C23C16/325 , C30B25/02 , C30B29/06 , H01L21/0237 , H01L21/02529 , H01L21/02573 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636
摘要： The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.
摘要翻译：本发明公开了在改进的化学气相沉积（mCVD）条件下，外延硅膜可以通过将包含在腔室内的衬底暴露于相对高的载气流量与在较低的硅前体流速小于约550℃，压力范围为约10mTorr-200Torr。此外，通过在改进的CVD条件下使用四硅烷作为硅源和含碳气体如十二烷基甲基环己硅烷或四甲基二硅烷以相对高的流速进行沉积，可以将晶体Si原位掺杂以含有相对高水平的取代碳。

3. 发明申请

US20140045324A1 LOW TEMPERATURE EPITAXY OF A SEMICONDUCTOR ALLOY INCLUDING SILICON AND GERMANIUM EMPLOYING A HIGH ORDER SILANE PRECURSOR 有权
标题翻译：包含硅和锗的半导体合金的低温外延使用高阶硅烷前体
公开(公告)号：US20140045324A1
公开(公告)日：2014-02-13
申请号：US14057064
申请日：2013-10-18
申请人： MATHESON TRI-GAS, INC. , INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Paul D. Brabant , Keith Chung , Hong He , Devendra K. Sadana , Manabu Shinriki
IPC分类号： H01L21/02
CPC分类号： H01L21/02532 , C30B25/02 , C30B29/52 , H01L21/02573 , H01L21/0262 , H01L21/02636
摘要： A high order silane having a formula of SinH2n+2, in which n is an integer greater than 3, in combination with a germanium precursor gas is employed to deposit an epitaxial semiconductor alloy material including at least silicon and germanium on a single crystalline surface. The germanium precursor gas effectively reduces the gas phase reaction of the high order silane, thereby improving the thickness uniformity of the deposited epitaxial semiconductor alloy material. The combination of the high order silane and the germanium precursor gas provides a high deposition rate in the Frank-van der Merwe growth mode for deposition of a single crystalline semiconductor alloy material.
摘要翻译：使用与锗前体气体组合的具有式SinH2n + 2的其中n为大于3的整数的高级硅烷在单一晶体表面上沉积至少包含硅和锗的外延半导体合金材料。锗前体气体有效地降低了高级硅烷的气相反应，从而提高了沉积的外延半导体合金材料的厚度均匀性。高阶硅烷和锗前体气体的组合在用于沉积单晶半导体合金材料的Frank-van der Merwe生长模式中提供高沉积速率。

4. 发明申请

US20090317317A1 Fluid Storage and Purification Method and System 失效
标题翻译：流体储存和净化方法与系统
公开(公告)号：US20090317317A1
公开(公告)日：2009-12-24
申请号：US12551627
申请日：2009-09-01
申请人： Carrie L. Wyse , Robert Torres, JR. , Joseph V. Vininski
发明人： Carrie L. Wyse , Robert Torres, JR. , Joseph V. Vininski
IPC分类号： B01D19/00 , C01B6/10 , C01B33/08 , C01B25/00 , C01B6/00 , C01B7/07
CPC分类号： F17C11/00 , B01D11/0288 , G06Q99/00 , Y10T137/0318 , Y10T137/0379 , Y10T137/0396
摘要： A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. A solvent mixture comprising an ionic liquid and a cosolvent is provided within the vessel. The fluid is contacted with the solvent mixture for take-up of the fluid by the solvent mixture. The fluid is released from the ionic liquid and dispensed from the vessel.
摘要翻译：存储和分配流体的方法包括提供构造用于从其中选择性地分配流体的容器。在容器内提供包含离子液体和助溶剂的溶剂混合物。流体与溶剂混合物接触，以通过溶剂混合物吸收流体。流体从离子液体中释放并从容器中分配。

5. 发明申请

US20090025455A1 Leak Characterization Apparatuses and Methods for Fluid Storage Containers 审中-公开
标题翻译：流体储存容器的泄漏特性设备和方法
公开(公告)号：US20090025455A1
公开(公告)日：2009-01-29
申请号：US12245469
申请日：2008-10-03
申请人： Stuart Muller , Robert Torres, JR.
发明人： Stuart Muller , Robert Torres, JR.
IPC分类号： G01M3/04
CPC分类号： G01M3/229
摘要： According to the invention, an apparatus to characterize leaks in a fluid storage container is disclosed. The apparatus may include a valve coupler, a gas manifold and a processor. The valve coupler may couple the apparatus with a closed valve on the fluid storage container. The gas manifold may be coupled with the valve coupler and may include a first branch connected with a gas monitoring device. The gas monitoring device may scan for a plurality of gases that may be emitted by the closed valve of the fluid storage container. The processor may be operable to receive gas monitoring device data representing masses for one or more of the plurality of gases detected by the monitor.
摘要翻译：根据本发明，公开了一种用于表征流体储存容器中泄漏的装置。该装置可以包括阀联接器，气体歧管和处理器。阀联接器可将装置与液体储存容器上的封闭阀联接。气体歧管可以与阀联接器联接，并且可以包括与气体监测装置连接的第一分支。气体监测装置可以扫描可由流体储存容器的封闭阀发射的多种气体。处理器可以可操作地接收表示由监视器检测到的多个气体中的一个或多个气体的质量的气体监测装置数据。

6. 发明授权

US07101415B2 Methods for regenerating process gas purifier materials 有权
标题翻译：再生工艺气体净化器材料的方法
公开(公告)号：US07101415B2
公开(公告)日：2006-09-05
申请号：US10651644
申请日：2003-08-28
申请人： Robert Torres, Jr. , Joseph Vivinski , David Lawrence
发明人： Robert Torres, Jr. , Joseph Vivinski , David Lawrence
IPC分类号： B01D53/04
CPC分类号： B01D53/685 , B01D53/02 , B01D53/81
摘要： A continuous method of producing a process fluid gas from a feed stream that includes the process fluid and impurities. The method includes: (a) providing a first and second vessel, each vessel containing one or more regenerable purifier materials for removing at least one of the impurities from the feed stream; (b) removing at least one of the impurities by passing the feed stream through one or the other of the vessels to provide a purified process fluid gas, with the vessel being maintained at a first temperature during the removal of impurities; and (c) regenerating the purifier materials in the vessels at a second temperature and during the time when it is not purifying the feed stream by flowing a portion of the purified process fluid or the feed stream or a separate source of the process fluid gas therethrough.
摘要翻译：从包含工艺流体和杂质的进料流产生工艺流体气体的连续方法。该方法包括：（a）提供第一和第二容器，每个容器含有一种或多种可再生净化剂材料，用于从进料流中除去至少一种杂质; （b）通过使进料流通过一个或另一个容器来除去至少一种杂质，以提供净化的工艺流体气体，在除去杂质期间容器保持在第一温度; 和（c）在第二温度下，并且在通过使净化的工艺流体或进料流的一部分或处理流体气体的单独源流过其中的一部分而不净化进料流的时间来再生容器中的净化器材料。

7. 发明授权

US07021488B2 Pressure vessel for compressed gases utilizing a replaceable and flexible liner 失效
标题翻译：压缩容器采用可替换和柔性的衬垫
公开(公告)号：US07021488B2
公开(公告)日：2006-04-04
申请号：US10403309
申请日：2003-03-31
申请人： Scott R. Thompson
发明人： Scott R. Thompson
IPC分类号： B65D25/14
CPC分类号： F17C1/00 , F17C1/14 , F17C2201/0109 , F17C2201/0119 , F17C2201/018 , F17C2201/056 , F17C2201/058 , F17C2203/032 , F17C2203/0604 , F17C2203/0619 , F17C2203/0636 , F17C2203/0639 , F17C2203/0646 , F17C2203/066 , F17C2203/0685 , F17C2205/0323 , F17C2205/0329 , F17C2205/0332 , F17C2205/0394 , F17C2209/22 , F17C2209/232 , F17C2221/011 , F17C2221/014 , F17C2221/017 , F17C2221/05 , F17C2223/0123 , F17C2223/036 , F17C2225/0123 , F17C2260/044 , F17C2260/048 , F17C2270/02 , F17C2270/05 , F17C2270/0745
摘要： A pressure vessel assembly, and method of use, for storing a gas at an elevated pressure. The assembly includes a vessel body having a rigid wall with an inner surface defining a storage chamber and with an inlet allowing the gas to enter the storage chamber. The assembly includes a flexible liner positioned within the storage chamber to be in fluid communication with the inlet to receive any fluid entering the vessel body. The liner is formed of an elastic inner layer contacting the gas and a metallic outer surface. The inflated, unrestrained liner volume is generally at least as large as the chamber volume and more typically, slightly larger. Stored gas contacts the inner surface of the liner and expands the liner from a smaller deflated volume until the outer surface of the liner contacts the wall of the pressure vessel.
摘要翻译：压力容器组件和使用方法，用于在升高的压力下储存气体。组件包括具有刚性壁的容器本体，其具有限定存储室的内表面和允许气体进入存储室的入口。组件包括位于储存室内的柔性衬垫，以与入口流体连通以接收进入容器主体的任何流体。衬垫由与气体和金属外表面接触的弹性内层形成。膨胀的无约束衬管体积通常至少与室体积一样大，更典型地，稍大。存储的气体接触衬套的内表面，并使衬垫从较小的放气体积膨胀，直到衬套的外表面与压力容器的壁接触。

8. 发明授权

US09218962B2 Low temperature epitaxy of a semiconductor alloy including silicon and germanium employing a high order silane precursor 有权
标题翻译：包括采用高级硅烷前体的硅和锗的半导体合金的低温外延
公开(公告)号：US09218962B2
公开(公告)日：2015-12-22
申请号：US14057064
申请日：2013-10-18
申请人： GLOBALFOUNDRIES INC. , Matheson Tri-Gas, Inc.
发明人： Paul D. Brabant , Keith Chung , Hong He , Devendra K. Sadana , Manabu Shinriki
IPC分类号： H01L21/36 , H01L21/20 , H01L21/02 , C30B25/02 , C30B29/52
CPC分类号： H01L21/02532 , C30B25/02 , C30B29/52 , H01L21/02573 , H01L21/0262 , H01L21/02636
摘要： A high order silane having a formula of SinH2n+2, in which n is an integer greater than 3, in combination with a germanium precursor gas is employed to deposit an epitaxial semiconductor alloy material including at least silicon and germanium on a single crystalline surface. The germanium precursor gas effectively reduces the gas phase reaction of the high order silane, thereby improving the thickness uniformity of the deposited epitaxial semiconductor alloy material. The combination of the high order silane and the germanium precursor gas provides a high deposition rate in the Frank-van der Merwe growth mode for deposition of a single crystalline semiconductor alloy material.
摘要翻译：使用与锗前体气体组合的具有式SinH2n + 2的其中n为大于3的整数的高级硅烷在单一结晶表面上沉积至少包含硅和锗的外延半导体合金材料。锗前体气体有效地降低了高级硅烷的气相反应，从而提高了沉积的外延半导体合金材料的厚度均匀性。高阶硅烷和锗前体气体的组合在用于沉积单晶半导体合金材料的Frank-van der Merwe生长模式中提供高沉积速率。

9. 发明申请

US20130133519A1 REMOVAL OF IMPURITIES FROM HYDROGEN-CONTAINING MATERIALS 失效
公开(公告)号：US20130133519A1
公开(公告)日：2013-05-30
申请号：US13599934
申请日：2012-08-30
申请人： Tadaharu Watanabe , Mark Raynor , Ade Lau , Hirotaka Mangyo
发明人： Tadaharu Watanabe , Mark Raynor , Ade Lau , Hirotaka Mangyo
IPC分类号： C01B33/04
CPC分类号： C01B33/046 , B01D53/02 , B01D53/38 , B01D2251/202 , B01D2251/2062 , B01D2253/106 , B01D2255/30 , B01D2258/0216 , B01J20/103 , B01J20/186 , B01J2220/42
摘要： Methods of purifying hydrogen-containing materials are described. The methods may include the steps of providing a purifier material comprising silica. The silica may be heated at temperature of about 100° C. or more in a dry atmosphere to form activated silica. The activated silica may be contacted with a starting hydrogen-containing material, where the activated silica reduces a concentration of one or more impurity from the starting hydrogen-containing material to form the purified hydrogen-containing material, and where the activated silica does not decompose the purified hydrogen-containing material.

10. 发明申请

US20110088718A1 CHAMBER CLEANING METHODS USING FLUORINE CONTAINING CLEANING COMPOUNDS 审中-公开
标题翻译：使用含有清洁剂的氟化物的清洁方法
公开(公告)号：US20110088718A1
公开(公告)日：2011-04-21
申请号：US12904818
申请日：2010-10-14
申请人： Robert Torres, JR. , Carrie L. Wyse
发明人： Robert Torres, JR. , Carrie L. Wyse
IPC分类号： B08B7/00
CPC分类号： C23C16/4405 , B08B7/0035
摘要： Methods of cleaning a process chamber used to fabricate electronics components are described. The methods may include the step of providing a cleaning gas mixture to the process chamber, where the cleaning gas mixture may include a fluorine-containing precursor, and where the cleaning gas mixture removes contaminants from interior surfaces of the processing chamber that are exposed to the cleaning gas mixture. The methods may also include the steps of removing the reaction products of the cleaning gas mixture from the process chamber, and providing a substrate to the process chamber following the evacuation of the reaction products from the process chamber. The cleaning gas mixture may include one or more hydrofluoronated ethers, and the contaminants may include one or more tin-containing contaminants.
摘要翻译：描述了清洁用于制造电子部件的处理室的方法。所述方法可以包括向处理室提供清洁气体混合物的步骤，其中清洁气体混合物可以包括含氟前体，并且其中清洁气体混合物从暴露于所述处理室的处理室的内表面去除污染物清洁气体混合物。所述方法还可以包括以下步骤：从处理室中除去清洁气体混合物的反应产物，以及在反应产物从处理室排出之后将基底提供给处理室。清洁气体混合物可以包括一种或多种氢化氟化醚，并且污染物可以包括一种或多种含锡污染物。

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