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1. 发明申请

US20090025456A1 Leak Characterization Apparatuses and Methods for Fluid Storage Containers 审中-公开
标题翻译：流体储存容器的泄漏特性设备和方法
公开(公告)号：US20090025456A1
公开(公告)日：2009-01-29
申请号：US12245483
申请日：2008-10-03
申请人： Stuart Muller , Robert Torres, JR.
发明人： Stuart Muller , Robert Torres, JR.
IPC分类号： G01M3/04
CPC分类号： G01M3/229
摘要： An apparatus for determining a leak rate of a gas from a closed valve is disclosed. The apparatus may include a vacuum pump, a pressure measuring device, a monitoring device, and a computer. The vacuum pump may be configured to couple downstream of the closed valve and decrease the pressure of the downstream side of the closed valve. The pressure measuring device may be configured to couple with the downstream side and determine the pressure. The monitoring device may be configured to couple with the downstream side and monitor a gas, where the gas may be emitted from the closed valve and be characterized by a mass. The monitoring device may further be configured to determine the mass. The computer may be configured to control the vacuum pump based on the pressure, and determine the leak rate of the gas based at least in part on the mass.
摘要翻译：公开了一种用于确定来自封闭阀的气体泄漏率的装置。该装置可以包括真空泵，压力测量装置，监视装置和计算机。真空泵可以被配置为联接关闭的阀的下游并减小关闭阀的下游侧的压力。压力测量装置可以被配置成与下游侧连接并确定压力。监测装置可以被配置为与下游侧联接并监测气体，其中气体可以从封闭的阀发射并且通过质量来表征。监测装置还可以被配置为确定质量。计算机可以被配置为基于压力来控制真空泵，并且至少部分地基于质量确定气体的泄漏率。

2. 发明申请

US20090025455A1 Leak Characterization Apparatuses and Methods for Fluid Storage Containers 审中-公开
标题翻译：流体储存容器的泄漏特性设备和方法
公开(公告)号：US20090025455A1
公开(公告)日：2009-01-29
申请号：US12245469
申请日：2008-10-03
申请人： Stuart Muller , Robert Torres, JR.
发明人： Stuart Muller , Robert Torres, JR.
IPC分类号： G01M3/04
CPC分类号： G01M3/229
摘要： According to the invention, an apparatus to characterize leaks in a fluid storage container is disclosed. The apparatus may include a valve coupler, a gas manifold and a processor. The valve coupler may couple the apparatus with a closed valve on the fluid storage container. The gas manifold may be coupled with the valve coupler and may include a first branch connected with a gas monitoring device. The gas monitoring device may scan for a plurality of gases that may be emitted by the closed valve of the fluid storage container. The processor may be operable to receive gas monitoring device data representing masses for one or more of the plurality of gases detected by the monitor.
摘要翻译：根据本发明，公开了一种用于表征流体储存容器中泄漏的装置。该装置可以包括阀联接器，气体歧管和处理器。阀联接器可将装置与液体储存容器上的封闭阀联接。气体歧管可以与阀联接器联接，并且可以包括与气体监测装置连接的第一分支。气体监测装置可以扫描可由流体储存容器的封闭阀发射的多种气体。处理器可以可操作地接收表示由监视器检测到的多个气体中的一个或多个气体的质量的气体监测装置数据。

3. 发明申请

US20140060571A1 IN-SITU GENERATION OF THE MOLECULAR ETCHER CARBONYL FLUORIDE OR ANY OF ITS VARIANTS AND ITS USE 有权
标题翻译：分子氧化碳氟化物或任何其变体及其使用的现场生成
公开(公告)号：US20140060571A1
公开(公告)日：2014-03-06
申请号：US13831613
申请日：2013-03-15
申请人： Glenn Mitchell , Ramkumar Subramanian , Carrie L. Wyse , Robert Torres, JR.
发明人： Glenn Mitchell , Ramkumar Subramanian , Carrie L. Wyse , Robert Torres, JR.
IPC分类号： B01J19/08 , B08B7/00 , B01J19/12
CPC分类号： B01J19/087 , B01J19/081 , B01J19/088 , B01J19/123 , B01J19/125 , B01J19/126 , B01J19/127 , B01J19/128 , B01J19/129 , B01J2219/0883 , B01J2219/0892 , C01B31/00 , C01B32/00 , C01B32/80 , C23C16/4405 , H01L21/31116 , Y02C20/30 , Y02P70/605
摘要： The molecular etcher carbonyl fluoride (COF2) or any of its variants, are provided for, according to the present invention, to increase the efficiency of etching and/or cleaning and/or removal of materials such as the unwanted film and/or deposits on the chamber walls and other components in a process chamber or substrate (collectively referred to herein as “materials”). The methods of the present invention involve igniting and sustaining a plasma, whether it is a remote or in-situ plasma, by stepwise addition of additives, such as but not limited to, a saturated, unsaturated or partially unsaturated perfluorocarbon compound (PFC) having the general formula (CyFz) and/or an oxide of carbon (COx) to a nitrogen trifluoride (NF3) plasma into a chemical deposition chamber (CVD) chamber, thereby generating COF2. The NF3 may be excited in a plasma inside the CVD chamber or in a remote plasma region upstream from the CVD chamber. The additive(s) may be introduced upstream or downstream of the remote plasma such that both NF3 and the additive(s) (and any plasma-generated effluents) are present in the CVD chamber during cleaning.
摘要翻译：根据本发明，提供分子蚀刻剂碳酰氟（COF 2）或其任何变体，以提高蚀刻和/或清洁和/或去除诸如不需要的膜和/或沉积物之类的材料的效率处理室或基板（这里统称为“材料”）中的室壁和其它部件。本发明的方法包括通过逐步添加添加剂，例如但不限于饱和的，不饱和的或部分不饱和的全氟化碳化合物（PFC）来点燃和维持等离子体，无论是远距离还是原位等离子体，其具有通式（CyFz）和/或碳（COx）与三氟化氮（NF3）等离子体的氧化物进入化学沉积室（CVD）室，从而产生COF 2。 NF 3可以在CVD室内的等离子体中或在CVD室上游的远程等离子体区域中被激发。添加剂可以被引入远程等离子体的上游或下游，使得NF 3和添加剂（和任何等离子体产生的流出物）在清洁期间都存在于CVD室中。

4. 发明申请

US20090317317A1 Fluid Storage and Purification Method and System 失效
标题翻译：流体储存和净化方法与系统
公开(公告)号：US20090317317A1
公开(公告)日：2009-12-24
申请号：US12551627
申请日：2009-09-01
申请人： Carrie L. Wyse , Robert Torres, JR. , Joseph V. Vininski
发明人： Carrie L. Wyse , Robert Torres, JR. , Joseph V. Vininski
IPC分类号： B01D19/00 , C01B6/10 , C01B33/08 , C01B25/00 , C01B6/00 , C01B7/07
CPC分类号： F17C11/00 , B01D11/0288 , G06Q99/00 , Y10T137/0318 , Y10T137/0379 , Y10T137/0396
摘要： A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. A solvent mixture comprising an ionic liquid and a cosolvent is provided within the vessel. The fluid is contacted with the solvent mixture for take-up of the fluid by the solvent mixture. The fluid is released from the ionic liquid and dispensed from the vessel.
摘要翻译：存储和分配流体的方法包括提供构造用于从其中选择性地分配流体的容器。在容器内提供包含离子液体和助溶剂的溶剂混合物。流体与溶剂混合物接触，以通过溶剂混合物吸收流体。流体从离子液体中释放并从容器中分配。

5. 发明申请

US20090278455A1 METHODS AND MATERIALS FOR THE REDUCTION AND CONTROL OF MOISTURE AND OXYGEN IN OLED DEVICES 失效
标题翻译：用于减少和控制OLED器件中的水分和氧气的方法和材料
公开(公告)号：US20090278455A1
公开(公告)日：2009-11-12
申请号：US12470276
申请日：2009-05-21
申请人： Robert Torres, JR. , Tadaharu Watanabe , Joseph V. Vininski
发明人： Robert Torres, JR. , Tadaharu Watanabe , Joseph V. Vininski
IPC分类号： H01J17/24
CPC分类号： B01J20/06 , B01J20/0259 , B01J20/08 , B01J20/223 , B01J20/26 , B01J20/261 , B01J20/264 , B01J20/265 , B01J20/267 , B01J20/28004 , B01J20/28016 , B01J20/2803 , B01J20/28035 , B01J20/28057 , B01J20/3042 , B01J20/3204 , B01J20/321 , B01J20/3223 , B01J20/3234 , B01J20/3236 , B01J20/3265 , B01J20/3293 , B01J20/3297 , B01J2220/46 , B01J2220/49 , H01L23/26 , H01L51/5246 , H01L51/5259 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： Novel uses and methods of use for inorganic and macroreticulate polymer bonding to metals to control moisture and oxygen in OLED, and other like devices, are provided. Materials having color change capacity are also provided for the removal of moisture from an OLED, where the material changes color upon reaching its capacity and thereby signals the user that the OLED is no longer protected from moisture damage.
摘要翻译：提供了用于无机和大理石聚合物粘合金属以控制OLED和其它类似装置中的水分和氧气的新用途和使用方法。还提供具有变色能力的材料用于从OLED去除水分，其中材料在达到其容量时改变颜色，从而向用户发出指示，OLED不再受保护而不受水分损害。

6. 发明申请

US20140060574A1 IN-SITU TCO CHAMBER CLEAN 审中-公开
标题翻译：现场TCO室清洁
公开(公告)号：US20140060574A1
公开(公告)日：2014-03-06
申请号：US14016430
申请日：2013-09-03
申请人： Carrie Wyse , Glenn Mitchell , Robert Torres, JR. , Ramkumar Subramanian , Matt Shinriki
发明人： Carrie Wyse , Glenn Mitchell , Robert Torres, JR. , Ramkumar Subramanian , Matt Shinriki
IPC分类号： B08B7/00
CPC分类号： B08B7/00 , C11D11/0041 , C23C14/564 , C23C16/4405
摘要： The present invention discloses new chamber clean chemistries for low temperature, gas phase, in-situ removal of fluorine doped tin oxide (FTO) films. These new in-situ cleaning chemistries will enable solar glass and low-emissivity glass manufacturers to improve the quality of FTO films produced, as well as reduce costs associated manual cleaning of FTO deposition systems. The end result is increased production throughput and better quality FTO films. This is achieved by using gas phase, in-situ cleaning molecules, such as, but not limited to, HI, CH3I, and HBr, in the FTO deposition chamber to remove unwanted buildup of FTO from chamber walls and components. Significant revenue can be derived from this customer benefit through molecule and technology solution sales related to in-situ FTO TCO chamber cleaning.
摘要翻译：本发明公开了用于低温，气相，原位去除氟掺杂氧化锡（FTO）膜的新型室清洁化学品。这些新的原位清洁化学品将使太阳能玻璃和低辐射玻璃制造商能够提高生产的FTO薄膜的质量，以及降低手动清洁FTO沉积系统的成本。最终的结果是提高了生产量和更好的质量FTO薄膜。这是通过在FTO沉积室中使用气相，原位清洁分子，例如但不限于HI，CH 3 I和HBr来实现的，以从室壁和组件去除不需要的FTO堆积。通过与现场FTO TCO室清洗相关的分子和技术解决方案销售，可以从这一客户利益中获得重要收入。

7. 发明申请

US20120024223A1 Thin films and methods of making them using cyclohexasilane 审中-公开
标题翻译：薄膜及其使用环己硅烷的方法
公开(公告)号：US20120024223A1
公开(公告)日：2012-02-02
申请号：US13135033
申请日：2011-06-23
申请人： Robert Torres, JR. , Terry Arthur Francis , Satoshi Hasaka , Paul David Brabant
发明人： Robert Torres, JR. , Terry Arthur Francis , Satoshi Hasaka , Paul David Brabant
IPC分类号： C30B25/14 , C30B25/12
CPC分类号： H01L21/02529 , C23C16/24 , C30B25/02 , C30B29/06 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： Cyclohexasilane is used in chemical vapor deposition methods to deposit epitaxial silicon-containing films over substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using cyclohexasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.
摘要翻译：环己硅烷用于化学气相沉积方法以将外延含硅膜沉积在基材上。这种方法在半导体制造中可用于提供各种优点，包括在异质表面上的均匀沉积，高沉积速率和更高的制造生产率。此外，可以通过在改进的CVD条件下使用环己硅烷作为硅源和含碳气体如十二烷基甲基环己硅烷或四甲基二硅烷以相对高的流速进行沉积，可以原位掺杂晶体Si以含有相对高水平的取代碳。

8. 发明申请

US20110073136A1 REMOVAL OF GALLIUM AND GALLIUM CONTAINING MATERIALS 审中-公开
标题翻译：去除含镓和镓的材料
公开(公告)号：US20110073136A1
公开(公告)日：2011-03-31
申请号：US12878556
申请日：2010-09-09
申请人： Robert Torres, JR. , Glenn Mitchell , Michael Sievers , Adam Seymour
发明人： Robert Torres, JR. , Glenn Mitchell , Michael Sievers , Adam Seymour
IPC分类号： B08B7/00
CPC分类号： C23C16/4405 , H01J37/32357 , H01J37/32862
摘要： Methods of removing gallium and gallium-containing materials from surfaces within a substrate processing chamber using a cleaning mixture are described. The cleaning mixture contains an iodine-containing compound and is introduced into the processing chamber. Iodine reacts with gallium resident within the chamber to produce thermally volatile Gal3. The Gal3 is removed using the exhaust system of the chamber by raising the temperature of the desorbing surface. Other volatile gallium-containing by-products may also be formed and removed from the exhaust system.
摘要翻译：描述了使用清洁混合物从衬底处理室内的表面去除镓和镓的材料的方法。清洁混合物含有含碘化合物并被引入处理室。碘与驻留在室内的镓反应以产生热挥发性Gal 3。通过提高解吸表面的温度，使用室的排气系统去除Gal 3。也可以从排气系统形成和除去其它挥发性含镓副产物。

9. 发明申请

US20120003819A1 Methods and apparatus for selective epitaxy of si-containing materials and substitutionally doped crystalline si-containing material 有权
标题翻译：用于选择性外延Si含量材料和替代掺杂晶体含Si材料的方法和设备
公开(公告)号：US20120003819A1
公开(公告)日：2012-01-05
申请号：US13135031
申请日：2011-06-23
申请人： Terry Arthur Francis , Satoshi Hasaka , Paul David Brabant , Robert Torres, JR. , He Hong , Alexander Reznicek , Thomas N. Adam , Devendra K. Sadana
发明人： Terry Arthur Francis , Satoshi Hasaka , Paul David Brabant , Robert Torres, JR. , He Hong , Alexander Reznicek , Thomas N. Adam , Devendra K. Sadana
IPC分类号： H01L21/205
CPC分类号： H01L21/02532 , C23C16/30 , C23C16/325 , C30B25/02 , C30B29/06 , H01L21/0237 , H01L21/02529 , H01L21/02573 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636
摘要： The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.
摘要翻译：本发明公开了在改进的化学气相沉积（mCVD）条件下，外延硅膜可以通过将包含在腔室内的衬底暴露于相对高的载气流量与在较低的硅前体流速小于约550℃，压力范围为约10mTorr-200Torr。此外，通过在改进的CVD条件下使用四硅烷作为硅源和含碳气体如十二烷基甲基环己硅烷或四甲基二硅烷以相对高的流速进行沉积，可以将晶体Si原位掺杂以含有相对高水平的取代碳。

10. 发明申请

US20110127660A1 METHODS AND MATERIALS FOR THE REDUCTION AND CONTROL OF MOISTURE AND OXYGEN IN OLED DEVICES 失效
标题翻译：用于减少和控制OLED器件中的水分和氧气的方法和材料
公开(公告)号：US20110127660A1
公开(公告)日：2011-06-02
申请号：US13023786
申请日：2011-02-09
申请人： Robert Torres, JR. , Tadaharu Watanabe , Joseph V. Vininski
发明人： Robert Torres, JR. , Tadaharu Watanabe , Joseph V. Vininski
IPC分类号： H01L23/58 , H01L21/322
CPC分类号： B01J20/06 , B01J20/0259 , B01J20/08 , B01J20/223 , B01J20/26 , B01J20/261 , B01J20/264 , B01J20/265 , B01J20/267 , B01J20/28004 , B01J20/28016 , B01J20/2803 , B01J20/28035 , B01J20/28057 , B01J20/3042 , B01J20/3204 , B01J20/321 , B01J20/3223 , B01J20/3234 , B01J20/3236 , B01J20/3265 , B01J20/3293 , B01J20/3297 , B01J2220/46 , B01J2220/49 , H01L23/26 , H01L51/5246 , H01L51/5259 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： Embodiments of the invention provide an electronic device which may include an interior compartment housing at least one electronic component that may be reactive to target impurities. The electronic component may include at least a cathode and an anode. A purifier material may be interspersed within a conducting polymer layer between the cathode and the anode. The purifier material may decrease target impurities within the interior compartment of the electronic device from a first level to a second level.
摘要翻译：本发明的实施例提供一种电子设备，其可以包括容纳至少一个可能与目标杂质反应的电子部件的内部隔室。电子部件可以至少包括阴极和阳极。净化器材料可以散布在阴极和阳极之间的导电聚合物层内。净化器材料可以将电子设备的内部隔间内的目标杂质从第一级降低到第二级。

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