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1. 发明申请

US20110147849A1 INTEGRATED CIRCUIT WITH ELECTROSTATICALLY COUPLED MOS TRANSISTORS AND METHOD FOR PRODUCING SUCH AN INTEGRATED CIRCUIT 有权
标题翻译：具有静电耦合MOS晶体管的集成电路和用于生产这种集成电路的方法
公开(公告)号：US20110147849A1
公开(公告)日：2011-06-23
申请号：US12868488
申请日：2010-08-25
申请人： Emmanuel AUGENDRE , Maud Vinet , Laurent Clavelier , Perrine Batude
发明人： Emmanuel AUGENDRE , Maud Vinet , Laurent Clavelier , Perrine Batude
IPC分类号： H01L27/088 , H01L21/98
CPC分类号： H01L27/1104 , H01L21/8221 , H01L27/0688 , H01L27/11
摘要： An integrated circuit including: a first transistor; a second transistor, arranged on the first transistor, whereof a channel region is formed in a semiconductor layer including two approximately parallel primary faces; a portion of an electrically conductive material electrically connected to a gate of the first transistor and arranged between the gate of the first transistor and the channel region of the second transistor; a dielectric layer arranged between the portion of the electrically conductive material and the channel region of the second transistor; and in which the section of the channel region of the second transistor is included in the section of the portion of the electrically conductive material, and the channel region of the second transistor is arranged between the portion of the electrically conductive material and a gate of the second transistor.
摘要翻译：一种集成电路，包括：第一晶体管; 第二晶体管，布置在第一晶体管上，沟道区形成在包括两个近似平行的主面的半导体层中; 导电材料的一部分电连接到第一晶体管的栅极并且布置在第一晶体管的栅极和第二晶体管的沟道区之间; 布置在所述导电材料的所述部分和所述第二晶体管的沟道区之间的电介质层; 并且其中第二晶体管的沟道区域的部分包括在导电材料部分的部分中，并且第二晶体管的沟道区域被布置在导电材料的部分和栅极之间第二晶体管。

2. 发明申请

US20100244970A1 ATOMIC CLOCK REGULATED BY A STATIC FIELD AND TWO OSCILLATING FIELDS 有权
标题翻译：由静态场和两个振荡场调节的原子钟
公开(公告)号：US20100244970A1
公开(公告)日：2010-09-30
申请号：US12743433
申请日：2008-12-10
申请人： Matthieu Le Prado , Jean-Michel Leger
发明人： Matthieu Le Prado , Jean-Michel Leger
IPC分类号： H01S1/06
CPC分类号： G04F5/14
摘要： An atomic clock including a mechanism applying both a static magnetic field and two oscillating magnetic fields, all mutually perpendicular, in a magnetic shield. The amplitudes and frequencies of the oscillating magnetic fields may be chosen so as to annihilate energy variations between sub-transition levels of excited atoms and to reinforce a clock output signal, and with low sensitivity to defects in regulation.
摘要翻译：包括在磁屏蔽中同时施加静磁场和两个振荡磁场（全部相互垂直）的原子钟。可以选择振荡磁场的振幅和频率，以消除激发原子的次跃迁水平之间的能量变化并加强时钟输出信号，并且对调节中的缺陷具有低灵敏度。

3. 发明申请

US20110086461A1 METHOD FOR MAKING AN OPTICAL DEVICE WITH INTEGRATED OPTOELECTRONIC COMPONENTS 有权
标题翻译：用于制造具有集成光电元件的光学器件的方法
公开(公告)号：US20110086461A1
公开(公告)日：2011-04-14
申请号：US12992714
申请日：2009-05-19
申请人： Sebastien Bolis
发明人： Sebastien Bolis
IPC分类号： H01L31/18
CPC分类号： H01L27/14618 , G02B13/001 , G02B13/0085 , H01L27/14609 , H01L27/14625 , H01L27/14685 , H01L27/14696 , H01L31/0203 , H01L31/02325 , H01L2924/0002 , H04N5/2253 , H04N5/2254 , H04N5/2257 , H01L2924/00
摘要： A method for making an optical device with integrated optoelectronic components, including a) making a protective structure including a support in which at least one blind hole is made, an optical element being positioned in the blind hole, b) attaching the support to a substrate including the integrated optoelectronic components, the blind hole forming a cavity in which the optical element faces one of the optoelectronic components, c) achieving thinning of the substrate and making electric connections through the substrate, and d) making an aperture through the bottom wall of the blind hole, uncovering at least one portion of the optical field of the optical element.
摘要翻译：一种用于制造具有集成光电子部件的光学器件的方法，包括：a）制造包括至少一个盲孔的支撑件的保护结构，光学元件定位在盲孔中，b）将支撑件附接到基板包括集成的光电子部件，盲孔形成光学元件面向光电元件之一的空腔，c）实现基板的薄化和通过基板的电连接，以及d）通过底板盲孔，露出光学元件的光场的至少一部分。

4. 发明申请

US20110035168A1 MULTICARRIER REFLECTOMETRY DEVICE AND METHOD FOR ON-LINE DIAGNOSIS OF AT LEAST ONE TRANSMISSION LINE 有权
标题翻译：用于一次传输线的在线诊断的多功能反射装置和方法
公开(公告)号：US20110035168A1
公开(公告)日：2011-02-10
申请号：US12936929
申请日：2009-05-12
申请人： Adrien Lelong , Marc Olivas
发明人： Adrien Lelong , Marc Olivas
IPC分类号： G01R13/00
CPC分类号： H04B3/46 , G01R31/11
摘要： A multi-carrier reflectometry device and method for on-line diagnosis of at least one transmission line. The device includes: a transmission part that includes successively: a module for parameterizing a test signal SF, such that: sF=[0, c1ejθ1, c2ejθ2, . . . , CN/2-1ejθN/2-1, CN/2, CN/2-1ejθN/2-1, cN/2-2ejθN/2-2, . . . , c1ejθ1]T, a module for synthesising the test signal by inverse discrete Fourier transform, and a digital to analog converter, connected to the line; and a detection part that includes successively: an analog to digital converter connected to this transmission line, a discrete Fourier transform module, and an analysis module containing a deconvolution module, which also receives the test signal sF.
摘要翻译：一种用于至少一条传输线的在线诊断的多载波反射测量装置和方法。该装置包括：传输部分，其连续包括：用于参数化测试信号SF的模块，使得：sF = [0，c1ej＆thetas; 1，c2ej＆thetas; 2，...，。。，CN / 2-1ej＆thetas; N / 2-1，CN / 2，CN / 2-1ej＆thetas; N / 2-1，cN / 2-2ej＆thetas; N / 2-2，。。，c1ej＆thetas; 1] T，用于通过反离散傅立叶变换合成测试信号的模块和连接到线路的数模转换器; 以及检测部，其连续地包括：连接到该传输线的模数转换器，离散傅立叶变换模块和包含反卷积模块的分析模块，其还接收测试信号sF。

5. 发明申请

US20110018132A1 OBJECT INCLUDING A GRAPHIC ELEMENT TRANSFERRED ON A SUPPORT AND METHOD FOR MAKING SUCH AN OBJECT 有权
标题翻译：包括在支持上传送的图形元素的对象和用于制造这样的对象的方法
公开(公告)号：US20110018132A1
公开(公告)日：2011-01-27
申请号：US12812561
申请日：2009-01-23
申请人： Alain Rey , Chrystel Deguet , Laurent Vandroux
发明人： Alain Rey , Chrystel Deguet , Laurent Vandroux
IPC分类号： H01L21/3205 , H01L29/24
CPC分类号： B44C1/00 , A44C17/00 , A44C27/00 , B44C1/22 , B44C5/0407
摘要： An object including at least one graphic element, including at least one layer including at least one metal and etched according to a pattern of the graphic element, a first face of the layer being positioned opposite a face of at least one at least partly transparent substrate, a second face, opposite to the first face, of the layer being covered with at least one passivation layer fixed to at least one face of at least one support by wafer bonding and forming with the support a monolithic structure, and the layer including at least at the second face, at least one area including the metal and at least one semiconductor.
摘要翻译：包括至少一个图形元素的物体，包括至少一层包括至少一种金属并且根据图形元件的图案被蚀刻，所述层的第一面与至少一个至少部分透明的基底的表面相对定位，所述层的与所述第一面相对的第二面被覆盖有通过晶片结合固定到至少一个支撑体的至少一个表面的至少一个钝化层，并且与所述支撑体一体形成，并且所述层包括在至少在第二面处包括至少一个包括金属和至少一个半导体的区域。

6. 发明申请

US20110284870A1 METHOD FOR MAKING A SEMICONDUCTOR STRUCTURE WITH A BURIED GROUND PLANE 有权
标题翻译：用BURIED GROUND PLANE制作半导体结构的方法
公开(公告)号：US20110284870A1
公开(公告)日：2011-11-24
申请号：US13057239
申请日：2009-08-13
申请人： Yannick Le Tiec , Francois Andrieu
发明人： Yannick Le Tiec , Francois Andrieu
IPC分类号： H01L29/02 , H01L29/06 , H01L21/18
CPC分类号： H01L29/1608 , H01L21/76254
摘要： A method for making a semiconducting structure, including: a) forming, on a surface of a final semiconductor substrate, a semiconducting layer, doped with elements from columns III and V of the Periodic Table so as to form a ground plane, b) forming a dielectric layer, c) then assembling, by direct adhesion of the source substrate, on the final substrate, the layer forming the ground plane between the final substrate and the source substrate, the dielectric layer being between the source substrate and the ground plane, d) then thinning the source substrate, leaving, on the surface of the semiconductor structure, a film made from a semiconducting material.
摘要翻译：一种制造半导体结构的方法，包括：a）在最终半导体衬底的表面上形成半导体层，掺杂元素周期表的第三和第五列的元素以形成接地面; b）形成电介质层，c）然后通过源衬底的直接粘附在最终衬底上组装在最终衬底和源衬底之间形成接地平面的层，介电层位于源极衬底和接地平面之间， d）然后使源衬底变薄，在半导体结构的表面上留下由半导体材料制成的膜。

7. 发明申请

US20110248602A1 ACOUSTIC RESONATOR COMPRISING AN ELECTRET AND METHOD OF PRODUCING SAID RESONATOR, APPLICATION TO SWITCHABLE COUPLED RESONATOR FILTERS 有权
标题翻译：包含电气的声学谐振器和产生均匀共振器的方法，应用于可切换的耦合谐振器滤波器
公开(公告)号：US20110248602A1
公开(公告)日：2011-10-13
申请号：US12975974
申请日：2010-12-22
申请人： Emmanuel DEFAY , Sebastien Boisseau , Ghislain Despesse , Brice Ivira , Alexandre Reinhardt
发明人： Emmanuel DEFAY , Sebastien Boisseau , Ghislain Despesse , Brice Ivira , Alexandre Reinhardt
IPC分类号： H01L41/04 , H01L41/22
CPC分类号： H03H9/02015 , H03H3/04 , H03H9/02031 , H03H9/173 , H03H9/175 , H03H9/583 , H03H9/584 , H03H9/585 , H03H2003/0414 , H03H2009/02196 , Y10T29/42
摘要： Acoustic resonator comprising an electret, and method of producing said resonator, application to switchable coupled resonator filters.The resonator comprises: at least one piezoelectric layer (30); electrodes (24, 26) on either side of this layer; and at least one electret layer (32) between the electrodes, to apply a permanent electric field to the piezoelectric layer. The intensity of this electric field is determined to shift the resonance frequency of the resonator by a desired value. The piezoelectric layer may contain electrical charges to itself constitute the electret layer.
摘要翻译：包括驻极体的声谐振器及其制造方法，可应用于可切换耦合的谐振滤波器。所述谐振器包括：至少一个压电层（30）; 该层两侧的电极（24,26）; 和在电极之间的至少一个驻极体层（32），以向压电层施加永久电场。确定该电场的强度以将谐振器的谐振频率偏移所需的值。压电层可以包含电荷本身构成驻极体层。

8. 发明申请

US20110221015A1 METHOD FOR PRODUCING AN ELECTRO-MECHANICAL MICROSYSTEM 有权
标题翻译：生产机电微结构的方法
公开(公告)号：US20110221015A1
公开(公告)日：2011-09-15
申请号：US13045040
申请日：2011-03-10
申请人： Frederic-Xavier Gaillard , Fabrice Nemouchi
发明人： Frederic-Xavier Gaillard , Fabrice Nemouchi
IPC分类号： H01L29/84 , H01L21/301 , H01L29/06
CPC分类号： B81C1/00476 , B81C2201/0115
摘要： A production method with release of movable mechanical parts of an electro-mechanical microsystem is disclosed. The method is characterized in that porous zones are formed on the front face of a first water of a semiconductor material. Patterns of a material able to constitute the movable mechanical parts of the electro-mechanical microsystem are then formed on the front face of the first water at the level of the porous zones and encapsulated in a sacrificial layer. Then a layer of a material withstanding an attack by a solvent of the sacrificial layer is deposited. The release of the movable mechanical parts is then executed by the rear face of the first water, through the porous zones, using a solvent of the sacrificial layer.
摘要翻译：公开了一种释放机电微系统的可移动机械部件的生产方法。该方法的特征在于，多孔区形成在半导体材料的第一水的前表面上。然后，能够构成机电微系统的可移动机械部件的材料的图案形成在多孔区域的水平面上的第一水的前表面上并封装在牺牲层中。然后沉积受到牺牲层的溶剂侵蚀的材料层。然后，使用牺牲层的溶剂，通过多孔区，通过第一水的后表面执行可移动机械部件的释放。

9. 发明申请

US20110003443A1 METHOD FOR PRODUCING A TRANSISTOR WITH METALLIC SOURCE AND DRAIN 有权
标题翻译：用于生产具有金属源和漏极的晶体管的方法
公开(公告)号：US20110003443A1
公开(公告)日：2011-01-06
申请号：US12796282
申请日：2010-06-08
申请人： Bernard Previtali , Thierry Poiroux , Maud Vinet
发明人： Bernard Previtali , Thierry Poiroux , Maud Vinet
IPC分类号： H01L21/336 , H01L21/762
CPC分类号： H01L21/84 , H01L27/1203 , H01L29/66772 , H01L29/78648 , H01L29/78696 , Y10S438/924
摘要： A method for producing a transistor with metallic source and drain including the steps of: a) producing a gate stack, b) producing two portions of a material capable of being selectively etched relative to a second dielectric material and arranged at the locations of the source and of the drain of the transistor, c) producing a second dielectric material-based layer covering the stack and the two portions of material, d) producing two holes in the second dielectric material-based layer forming accesses to the two portions of material, e) etching of said two portions of material, f) depositing a metallic material in the two formed cavities, and also including, between steps a) and b), a step of deposition of a barrier layer on the stack, against the lateral sides of the stack and against the face of the first dielectric material-based layer.
摘要翻译：一种用于制造具有金属源极和漏极的晶体管的方法，包括以下步骤：a）产生栅极堆叠，b）产生能够相对于第二介电材料选择性蚀刻的材料的两部分，并且布置在源极的位置处和晶体管的漏极，c）产生覆盖堆叠和两部分材料的第二介电材料基层，d）在第二介电材料基层中产生形成访问两部分材料的两个孔， e）蚀刻所述两部分材料，f）在两个形成的空腔中沉积金属材料，并且还包括在步骤a）和b）之间，将阻挡层沉积在堆叠上的侧面并且抵靠第一介电材料层的表面。

10. 发明申请

US20100266931A1 SEALED FLEXIBLE LINK BETWEEN A METAL SUBSTRATE AND A CERAMIC SUBSTRATE, METHOD FOR MAKING SUCH A LINK, APPLICATION OF THE METHOD TO SEALING HIGH TEMPERATURE ELECTROLYZERS AND FUEL CELLS 失效
标题翻译：金属基材和陶瓷基板之间的密封柔性连接，用于制造这种连接的方法，密封高温电解液和燃料电池的方法的应用
公开(公告)号：US20100266931A1
公开(公告)日：2010-10-21
申请号：US12808488
申请日：2008-12-22
申请人： Magali Reytier , Philippe Bucci
发明人： Magali Reytier , Philippe Bucci
IPC分类号： H01M2/08 , B32B3/30 , C25B9/00 , B23K31/02
CPC分类号： C25B9/04 , C04B37/026 , C04B2237/125 , C04B2237/348 , C04B2237/405 , C04B2237/406 , C04B2237/64 , C04B2237/76 , C04B2237/82 , C04B2237/88 , C25B1/04 , F16J15/0887 , H01M8/0271 , H01M2008/1293 , Y02E60/366 , Y02P70/56 , Y10T428/24612
摘要： A device including a metal substrate and a ceramic substrate including a back-tapered groove separated from each other by a sealed flexible link. The link includes: a metal element including an end connected to the metal substrate and at another end housed in the groove of the ceramic substrate, the metal element being elastically deformable both in the groove along a direction radial to the groove and, in the separation space between the metal substrate and the ceramic substrate along the separation direction, and a joint-forming mass with a greater thermal expansion coefficient than that of the ceramic substrate and adhesively bonded to the end of the metal element housed in the back-tapered groove, the joint fitting with direct contact a portion of the height of convergent sidewalls of the groove.
摘要翻译：一种包括金属基板和陶瓷基板的装置，包括通过密封的柔性连接件彼此分离的后锥形槽。该连接件包括：金属元件，其包括连接到金属基板的端部，并且在另一端容纳在陶瓷基板的凹槽中，金属元件可沿凹槽的径向方向在凹槽中弹性变形，并且在分离沿着分离方向在金属基板和陶瓷基板之间的间隔，以及具有比陶瓷基板的热膨胀系数大的热膨胀系数的接头形成质量块，并且粘合到容纳在后锥形槽中的金属元件的端部，所述接头配合与所述凹槽的会聚侧壁的高度的一部分直接接触。

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