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1. 发明授权

US09106199B2 Acoustic wave device including a surface wave filter and a bulk wave filter, and method for making same 有权
标题翻译：包括表面波滤波器和体波滤波器的声波器件及其制造方法
公开(公告)号：US09106199B2
公开(公告)日：2015-08-11
申请号：US13500614
申请日：2010-10-04
申请人： Chrystel Deguet , Laurent Clavelier , Emmanuel Defay , Alexandre Reinhardt
发明人： Chrystel Deguet , Laurent Clavelier , Emmanuel Defay , Alexandre Reinhardt
IPC分类号： H03H3/08 , H03H3/02 , H03H3/007
CPC分类号： H03H3/08 , H03H3/02 , H03H2003/0071 , Y10T29/42
摘要： An acoustic wave device comprising at least one surface acoustic wave filter and one bulk acoustic wave filter, the device including, on a substrate comprising a second piezoelectric material: a stack of layers including a first metal layer and a layer of a first monocrystalline piezoelectric material, wherein the stack of layers is partially etched so as to define a first area in which the first and second piezoelectric materials are present and a second area in which the first piezoelectric material is absent; a second metallization at the first area for defining the bulk acoustic wave filter integrating the first piezoelectric material, and a third metallization at the second area for defining the surface acoustic wave filter integrating the second piezoelectric material.
摘要翻译：一种声波装置，包括至少一个表面声波滤波器和一个体声波滤波器，该装置包括在包括第二压电材料的基板上，包括第一金属层和第一单晶压电材料层其中，所述层的一部分被部分蚀刻以限定其中存在所述第一和第二压电材料的第一区域和不存在所述第一压电材料的第二区域; 在第一区域处的第二金属化，用于限定集成第一压电材料的体声滤波器，以及在第二区域处的第三金属化，用于限定整合第二压电材料的表面声波滤波器。

2. 发明授权

US08779651B2 Optimized device for converting mechanical energy into electrical energy 有权
标题翻译：用于将机械能转换为电能的优化装置
公开(公告)号：US08779651B2
公开(公告)日：2014-07-15
申请号：US13984542
申请日：2012-01-31
申请人： Bouhadjar Ahmed Seddik , Emmanuel Defay , Ghislain Despesse
发明人： Bouhadjar Ahmed Seddik , Emmanuel Defay , Ghislain Despesse
IPC分类号： H01L41/09 , H01L41/113
CPC分类号： H02N2/188 , H01L41/113 , H01L41/1136
摘要： An apparatus for converting vibratory mechanical energy into electrical energy includes a mobile mass, a support, first and second beams, the second being piezoelectric, and a junction element. The first beam extends longitudinally between the support and the mass, each of which has a beam end embedded therein. The second beam links the support and the mobile mass. Its elongation stiffness is lower than that of the first beam. The junction element extends between the beams. A first assembly, with a first bending stiffness, comprises the first beam, the second beam, and the junction element. A second assembly consists of the first assembly minus the second beam. Its bending stiffness is less than or equal to half of that of the first assembly.
摘要翻译：用于将振动机械能转换成电能的装置包括移动质量块，支撑体，第一和第二梁，第二是压电元件和接合元件。第一梁在支撑件和质量块之间纵向延伸，每个梁具有嵌入其中的梁端。第二个梁连接支架和移动块。其伸长刚度低于第一梁的伸长刚度。连接元件在梁之间延伸。具有第一弯曲刚度的第一组件包括第一梁，第二梁和接合元件。第二组件由第一组件减去第二梁组成。其弯曲刚度小于或等于第一组件的一半。

3. 发明申请

US20130106243A1 Acoustic Wave Electromechanical Device Comprising a Transduction Region and an Extended Cavity 有权
标题翻译：包括传导区和扩展腔的声波机电装置
公开(公告)号：US20130106243A1
公开(公告)日：2013-05-02
申请号：US13456026
申请日：2012-04-25
申请人： Alexandre REINHARDT , Emmanuel DEFAY , Francois PERRUCHOT
发明人： Alexandre REINHARDT , Emmanuel DEFAY , Francois PERRUCHOT
IPC分类号： H03H9/25
CPC分类号： H03H9/25 , H03H3/02 , H03H3/08 , H03H9/02228 , H03H9/02622 , H03H9/02637 , H03H9/02669 , H03H9/02763 , H03H9/02803 , H03H9/0542 , H03H9/17 , H03H9/542 , H03H9/6403 , H03H2009/02165
摘要： An electromechanical device having a resonator using acoustic waves propagating laterally within a piezoelectric plane resonant structure and electrodes on a face of said structure. The resonant structure comprises: a transduction region having a transduction length and generating acoustic waves; a free propagation region for the acoustic waves, adjacent to the transduction region and defined the plane of the transduction region; the resonant structure length being equal to an integer number of half-wavelengths, the resonance frequency of said resonator equaling the average propagation velocity of the wave within the structure divided by said wavelength, to adjust the quality factor of the resonator fixed by the length of the resonant structure and the coupling coefficient fixed by the ratio of the transduction length over the length of the resonant structure; the resonant structure defined by the assembly of the transduction region and the propagation region being laterally bounded by reflection regions.
摘要翻译：一种机电装置，其具有使用在压电平面共振结构内横向传播的声波和在所述结构的面上的电极的谐振器。谐振结构包括：具有转导长度并产生声波的转导区域; 用于声波的自由传播区域，邻近转导区域并限定换能区域的平面; 谐振结构长度等于半波长的整数，所述谐振器的谐振频率等于结构中的波的平均传播速度除以所述波长，以调整谐振器的质量因子固定的长度谐振结构和耦合系数由谐振结构长度上的换能长度比固定; 由转导区域和传播区域的组装限定的共振结构由反射区域横向界定。

4. 发明授权

US08310129B2 Acoustic resonator comprising an electret and method of producing said resonator, application to switchable coupled resonator filters 有权
标题翻译：包括驻极体的声谐振器和产生所述谐振器的方法，应用于可切换耦合谐振滤波器
公开(公告)号：US08310129B2
公开(公告)日：2012-11-13
申请号：US12975974
申请日：2010-12-22
申请人： Emmanuel Defay , Sebastien Boisseau , Ghislain Despesse , Brice Ivira , Alexandre Reinhardt
发明人： Emmanuel Defay , Sebastien Boisseau , Ghislain Despesse , Brice Ivira , Alexandre Reinhardt
IPC分类号： H01L41/08
CPC分类号： H03H9/02015 , H03H3/04 , H03H9/02031 , H03H9/173 , H03H9/175 , H03H9/583 , H03H9/584 , H03H9/585 , H03H2003/0414 , H03H2009/02196 , Y10T29/42
摘要： Acoustic resonator comprising an electret, and method of producing said resonator, application to switchable coupled resonator filters.The resonator comprises: at least one piezoelectric layer (30); electrodes (24, 26) on either side of this layer; and at least one electret layer (32) between the electrodes, to apply a permanent electric field to the piezoelectric layer. The intensity of this electric field is determined to shift the resonance frequency of the resonator by a desired value. The piezoelectric layer may contain electrical charges to itself constitute the electret layer.
摘要翻译：包括驻极体的声谐振器及其制造方法，可应用于可切换耦合的谐振滤波器。所述谐振器包括：至少一个压电层（30）; 该层两侧的电极（24,26）; 和在电极之间的至少一个驻极体层（32），以向压电层施加永久电场。确定该电场的强度以将谐振器的谐振频率偏移所需的值。压电层可以包含电荷本身构成驻极体层。

5. 发明申请

US20110061215A1 PROCESS FOR FABRICATING AN OPTIMALLY-ACTUATING PIEZOELECTRIC MEMBRANE 有权
标题翻译：制造最佳实施压电膜的工艺
公开(公告)号：US20110061215A1
公开(公告)日：2011-03-17
申请号：US12881955
申请日：2010-09-14
申请人： Emmanuel DEFAY , Gwenaël LE RHUN
发明人： Emmanuel DEFAY , Gwenaël LE RHUN
IPC分类号： H01L41/22
CPC分类号： H01L41/0973 , B41J2/14233 , B41J2/161 , H01L41/047 , H01L41/053 , H01L41/25 , H01L41/29 , H01L41/314 , H01L41/317 , H01L41/318 , H01L41/43 , H01L41/47 , Y10T29/42 , Y10T29/49155 , Y10T29/49156 , Y10T29/49401
摘要： In a process for fabricating a membrane, including, on a substrate, a thin-film multilayer including a film of piezoelectric material placed between a top electrode film and a bottom electrode film and an elastic film supporting said piezoelectric film, the process includes: determining at least one concavity/convexity curvature of said membrane along an axis parallel to the plane of the films so that at least one inflection point is defined, said point allowing a first region and a second region, corresponding to a concave part and a convex part or vice versa, to be isolated; depositing, on the surface of the substrate, a thin-film multilayer including at least one film of piezoelectric material, one bottom electrode film and one top electrode film; and structuring at least one of the electrode films to define at least said first membrane region, in which an electric field perpendicular to the plane of the films may be applied, and at least said second region, in which an electric field parallel to the plane of the films may be applied.
摘要翻译：在制造膜的方法中，包括在基板上的包括放置在顶电极膜和底电极膜之间的压电材料膜的薄膜多层膜和支撑所述压电膜的弹性膜，所述方法包括：确定所述膜沿着平行于所述膜的平面的轴线的至少一个凹凸曲率，使得至少一个拐点被限定，所述点允许对应于凹部和凸部的第一区域和第二区域或反之亦然，被隔离; 在基板的表面上沉积包括至少一层压电材料薄膜，一个底部电极薄膜和一个顶部电极薄膜的薄膜多层膜; 并且构造至少一个所述电极膜以至少限定所述第一膜区域，其中可以施加垂直于所述膜的平面的电场，以及至少所述第二区域，其中平行于所述平面的电场的膜可以被应用。

6. 发明授权

US07906439B2 Method of fabricating a MEMS/NEMS electromechanical component 有权
标题翻译：制造MEMS / NEMS机电元件的方法
公开(公告)号：US07906439B2
公开(公告)日：2011-03-15
申请号：US12488898
申请日：2009-06-22
申请人： François Perruchot , Bernard Diem , Vincent Larrey , Laurent Clavelier , Emmanuel Defay
发明人： François Perruchot , Bernard Diem , Vincent Larrey , Laurent Clavelier , Emmanuel Defay
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： B81C1/00507 , B81B2201/0271 , B81C2201/0115 , B81C2201/0136 , B81C2201/0177 , B81C2203/0136 , B81C2203/0145 , H03H3/0072 , H03H9/175 , H03H9/2436 , Y10S438/933
摘要： The invention provides a method of fabricating and electromechanical device having an active element on at least one substrate, the method having the steps of: a) making a heterogeneous substrate having a first portion, an interface layer, and a second portion, the first portion including one or more buried zones sandwiched between first and second regions formed in a first monocrystalline material, the first region extending to the surface of the first portion, and the second region extending to the interface layer, at least one said buried zone being made at least in part out of a second monocrystalline material so as to make it selectively attackable relative to the first and second regions; b) making openings from the surface of the first portion and through the first region, which openings open out to at least one said buried zone; and c) etching at least part of at least one buried zone to form at least one cavity so as to define at least one active element that is at least a portion of the second region between said cavity and said interface layer; wherein the first and second portions of the substrate are constituted respectively from first and second substrates that are assembled together by bonding, at least one of them including at least one said interface layer over at least a fraction of its surface.
摘要翻译：本发明提供一种在至少一个基板上具有有源元件的制造方法和机电装置，该方法具有以下步骤：a）制造具有第一部分，界面层和第二部分的非均相基底，第一部分包括夹在形成于第一单晶材料中的第一和第二区域之间的一个或多个掩埋区域，第一区域延伸到第一部分的表面，第二区域延伸到界面层，至少一个所述掩埋区域至少部分地由第二单晶材料制成，以使其相对于第一和第二区域选择性地具有攻击性; b）从所述第一部分的表面和所述第一区域制造开口，所述第一区域开放到至少一个所述掩埋区域; 以及c）蚀刻至少一个掩埋区域的至少一部分以形成至少一个空腔，以便限定至少一个有源元件，所述至少一个有源元件是所述腔和所述界面层之间的第二区域的至少一部分; 其中所述基板的第一和第二部分分别由通过粘接而组装在一起的第一和第二基板构成，其中至少一个在其表面的至少一部分上包括至少一个所述界面层。

7. 发明授权

US08667845B2 Device and method for detecting elements in a fluid environment 有权
标题翻译：用于在流体环境中检测元件的装置和方法
公开(公告)号：US08667845B2
公开(公告)日：2014-03-11
申请号：US12937856
申请日：2009-04-14
申请人： Emmanuel Defay , Marc Aid , Pierre-Patrick Lassagne , Nicolas Sarrut-Rio
发明人： Emmanuel Defay , Marc Aid , Pierre-Patrick Lassagne , Nicolas Sarrut-Rio
IPC分类号： G01N29/036
CPC分类号： G01N29/022 , G01N2291/014 , G01N2291/0255 , G01N2291/0256 , G01N2291/0427
摘要： A device for detecting elements in a fluid environment includes at least one acoustic resonator having a surface designed for fixing of elements. The resonator is configured for generating and measuring Lamb waves fostering generation of symmetrical Lamb waves. The device analyzes the resonance frequency of the resonator to determine the variation of the resonance frequency of the symmetrical Lamb waves representative of the presence of the elements.
摘要翻译：用于检测流体环境中的元件的装置包括至少一个具有设计用于固定元件的表面的声谐振器。谐振器被配置用于产生和测量促进产生对称兰姆波的兰姆波。器件分析谐振器的谐振频率，以确定代表元件存在的对称兰姆波的谐振频率的变化。

8. 发明授权

US08445978B2 Electromechanical transducer device and method of forming a electromechanical transducer device 有权
标题翻译：机电换能器装置及形成机电换能装置的方法
公开(公告)号：US08445978B2
公开(公告)日：2013-05-21
申请号：US13128035
申请日：2009-11-25
申请人： Francois Perruchot , Emmanuel Defay , Patrice Rey , Lianjun Liu , Sergio Pacheco
发明人： Francois Perruchot , Emmanuel Defay , Patrice Rey , Lianjun Liu , Sergio Pacheco
IPC分类号： G01P15/08
CPC分类号： B81B3/0072 , B81B2201/032 , H01L41/0933 , H01L41/094
摘要： A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure comprising at least one mechanical layer having a first thermal response characteristic and a first mechanical stress response characteristic, at least one layer of the actuating structure, the at least one layer having a second thermal response characteristic different to the first thermal response characteristic and a second mechanical stress response characteristic different to the first mechanical stress response characteristic, a first compensation layer having a third thermal response characteristic and a third mechanical stress characteristic, and a second compensation layer having a fourth thermal response characteristic and a fourth mechanical stress response characteristic. The first and second compensation layers are arranged to compensate a thermal effect produced by the different first and second thermal response characteristics of the mechanical structure and the at least one layer of the actuating structure such that movement of the movable structure is substantially independent of variations in temperature and to adjust a stress effect produced by the different first and second stress response characteristics of the mechanical structure and the at least one layer of the actuating structure such that the movable structure is deflected a predetermined amount relative to the substrate when the electromechanical transducer device is in an inactive state.
摘要翻译：形成在半导体衬底上的微型或纳米机电换能器装置包括可移动结构，其被布置成响应于致动结构的致动而是可移动的。可移动结构包括机械结构，其包括具有第一热响应特性和第一机械应力响应特性的至少一个机械层，所述致动结构的至少一层，所述至少一层具有与第一热响应特性和与第一机械应力响应特性不同的第二机械应力响应特性，具有第三热响应特性和第三机械应力特性的第一补偿层，以及具有第四热响应特性的第二补偿层和第四机械应力响应特性。第一和第二补偿层布置成补偿由机械结构和致动结构的至少一个层的不同的第一和第二热响应特性产生的热效应，使得可移动结构的移动基本上与并且调节由所述机械结构和所述致动结构的所述至少一个层的不同的第一和第二应力响应特性产生的应力效应，使得当所述机电换能器装置处于非活动状态。

9. 发明申请

US20120007666A1 DEVICE FOR IMPEDANCE MATCHING A COMPONENT, COMPRISING A FILTER HAVING MATCHABLE IMPEDANCE, BASED ON A PEROVSKITE TYPE MATERIAL 有权
标题翻译：用于阻抗匹配的组件，包含具有匹配阻抗的过滤器，基于PEROVSKITE型材料
公开(公告)号：US20120007666A1
公开(公告)日：2012-01-12
申请号：US13173219
申请日：2011-06-30
申请人： Jean-Baptiste DAVID , Christophe BILLARD , Emmanuel DEFAY
发明人： Jean-Baptiste DAVID , Christophe BILLARD , Emmanuel DEFAY
IPC分类号： H04B1/10
CPC分类号： H03H9/02031 , H03H7/40
摘要： A device comprises at the input a first component (PA) having a first output impedance (Z1), at the output a second component (ANT) having a second input impedance (Z2), and an impedance-matching network between said first and second components. Because the first and/or the second impedance vary/varies, said impedance-matching network comprises a filter (Fadp), with an impedance that is matchable to the first and second impedances, located between said first and second components and comprising at least two acoustic wave coupled resonators. At least one of the resonators comprises a perovskite type material and means for applying a voltage to said resonator, which enable the permittivity and the impedance thereof to be varied.
摘要翻译：一种装置包括在输入端具有第一输出阻抗（Z1）的第一分量（PA），在输出处包括具有第二输入阻抗（Z2）的第二分量（ANT）和在所述第一和第二输出阻抗之间的阻抗匹配网络组件。由于第一和/或第二阻抗变化/变化，所述阻抗匹配网络包括滤波器（Fadp），其阻抗与第一和第二阻抗匹配，位于所述第一和第二组件之间，并且包括至少两个声波耦合谐振器。谐振器中的至少一个包括钙钛矿型材料和用于向所述谐振器施加电压的装置，其能够改变介电常数和阻抗。

10. 发明授权

US07993949B2 Heterogeneous substrate including a sacrificial layer, and a method of fabricating it 有权
标题翻译：包括牺牲层的非均相基板及其制造方法
公开(公告)号：US07993949B2
公开(公告)日：2011-08-09
申请号：US12488854
申请日：2009-06-22
申请人： François Perruchot , Bernard Diem , Vincent Larrey , Laurent Clavelier , Emmanuel Defay
发明人： François Perruchot , Bernard Diem , Vincent Larrey , Laurent Clavelier , Emmanuel Defay
IPC分类号： H01L21/02
CPC分类号： B81C1/00595 , B81B2201/0271 , B81C2201/0109 , B81C2201/014
摘要： The invention relates to a method of making a component from a heterogeneous substrate comprising first and second portions in at least one monocrystalline material, and a sacrificial layer constituted by at least one stack of at least one layer of monocrystalline Si situated between two layers of monocrystalline SiGe, the stack being disposed between said first and second portions of monocrystalline material, wherein the method consists in etching said stack by making: e) at least one opening in the first and/or second portion and the first and/or second layer of SiGe so as to reach the layer of Si; and f) eliminating all or part of the layer of Si.
摘要翻译：本发明涉及一种从包含至少一种单晶材料中的第一和第二部分的异质衬底制备组分的方法，以及由位于两层单晶之间的至少一层单晶硅的至少一个叠层构成的牺牲层 SiGe，堆叠设置在单晶材料的第一和第二部分之间，其中该方法包括通过以下步骤蚀刻所述堆叠：e）在第一和/或第二部分中的至少一个开口，以及第一和/ SiGe，以达到Si层; 和f）消除Si的全部或部分层。

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