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    • 10. 发明授权
    • Early detection of degradation in NOR flash memory
    • 早期检测NOR闪存中的降解
    • US08369143B2
    • 2013-02-05
    • US12930019
    • 2010-12-22
    • Luiz M. Franca-NetoRichard Leo GalbraithTravis Roger Oenning
    • Luiz M. Franca-NetoRichard Leo GalbraithTravis Roger Oenning
    • G11C11/34
    • G11C16/3495
    • The embodiments of the invention in this disclosure describe techniques for early warning of degradation in NOR Flash memories by estimating the dispersion of the threshold voltages (VT's), of a set of NOR Flash memory cells during read operations. In an embodiment invention the time-to-completion (TTC) values for the read operation for the memory cells are used as a proxy for dispersion of the threshold voltages (VT's). If the measured TTC dispersion differs by more than a selected amount from the reference dispersion value, a warning signal is provided to indicate that the page of memory has degraded significantly. Higher level components in the system can use the warning signal to take appropriate action. Since every cell's VT position in an ideal distribution can be estimated, the data from each cell can have a confidence level assigned based on deviation from the mean of an ideal distribution.
    • 本公开的本发明的实施例通过估计在读取操作期间的一组NOR闪存单元的阈值电压(VT)的偏差来描述用于NOR闪存中的劣化预警的技术。 在一个实施例中,用于存储器单元的读取操作的时间到完成(TTC)值被用作阈值电压(VT's)的色散的代理。 如果所测量的TTC色散比参考色散值差异多于所选择的量,则提供警告信号以指示存储器页面显着降级。 系统中较高级别的组件可以使用警告信号采取适当的措施。 由于可以估计每个单元的理想分布中的VT位置,所以来自每个单元的数据可以具有基于与理想分布的平均值的偏差分配的置信水平。