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    • 1. 发明授权
    • Early detection of degradation in NAND flash memory
    • 早期检测NAND闪存中的劣化
    • US08422296B2
    • 2013-04-16
    • US12930016
    • 2010-12-22
    • Luiz M. Franca-NetoRichard Leo GalbraithTravis Roger Oenning
    • Luiz M. Franca-NetoRichard Leo GalbraithTravis Roger Oenning
    • G11C11/34
    • G11C16/3495
    • Techniques for early detection of degradation in NAND Flash memories by measuring the dispersion of the threshold voltages (VT's), of a set (e.g. page) of NAND Flash memory cells during read operations are described. In an embodiment of the invention the time-to-completion (TTC) values for the read operation for the memory cells are used as a proxy for dispersion of the threshold voltages (VT's). A Dispersion Analyzer determines the dispersion of the set of TTC values. In one embodiment the delta between the maximum and minimum TTC values is used as the dispersion measurement. If the measured TTC dispersion differs by more than a selected amount from a reference dispersion value, a warning signal is provided to indicate that the page of memory has degraded. The warning signal can be used to take appropriate action such as moving the data to a new page.
    • 描述了在读取操作期间通过测量NAND闪存单元组(例如页面)的阈值电压(VT)的偏差来早期检测NAND闪存中的劣化的技术。 在本发明的一个实施例中,用于存储器单元的读取操作的完成时间(TTC)值用作阈值电压(VT)的色散的代理。 色散分析仪确定一组TTC值的色散。 在一个实施例中,使用最大和最小TTC值之间的差值作为色散测量。 如果测量的TTC色散比参考色散值差多于选定量,则提供警告信号以指示存储器页面已经劣化。 警告信号可用于采取适当措施,例如将数据移动到新页面。
    • 8. 发明授权
    • Early detection of degradation in NOR flash memory
    • 早期检测NOR闪存中的降解
    • US08369143B2
    • 2013-02-05
    • US12930019
    • 2010-12-22
    • Luiz M. Franca-NetoRichard Leo GalbraithTravis Roger Oenning
    • Luiz M. Franca-NetoRichard Leo GalbraithTravis Roger Oenning
    • G11C11/34
    • G11C16/3495
    • The embodiments of the invention in this disclosure describe techniques for early warning of degradation in NOR Flash memories by estimating the dispersion of the threshold voltages (VT's), of a set of NOR Flash memory cells during read operations. In an embodiment invention the time-to-completion (TTC) values for the read operation for the memory cells are used as a proxy for dispersion of the threshold voltages (VT's). If the measured TTC dispersion differs by more than a selected amount from the reference dispersion value, a warning signal is provided to indicate that the page of memory has degraded significantly. Higher level components in the system can use the warning signal to take appropriate action. Since every cell's VT position in an ideal distribution can be estimated, the data from each cell can have a confidence level assigned based on deviation from the mean of an ideal distribution.
    • 本公开的本发明的实施例通过估计在读取操作期间的一组NOR闪存单元的阈值电压(VT)的偏差来描述用于NOR闪存中的劣化预警的技术。 在一个实施例中,用于存储器单元的读取操作的时间到完成(TTC)值被用作阈值电压(VT's)的色散的代理。 如果所测量的TTC色散比参考色散值差异多于所选择的量,则提供警告信号以指示存储器页面显着降级。 系统中较高级别的组件可以使用警告信号采取适当的措施。 由于可以估计每个单元的理想分布中的VT位置,所以来自每个单元的数据可以具有基于与理想分布的平均值的偏差分配的置信水平。
    • 10. 发明授权
    • Data management in flash memory using probability of charge disturbances
    • 使用电荷扰动概率的闪存中的数据管理
    • US08649215B2
    • 2014-02-11
    • US12930017
    • 2010-12-22
    • Luiz M. Franca-NetoRichard Leo GalbraithTravis Roger Oenning
    • Luiz M. Franca-NetoRichard Leo GalbraithTravis Roger Oenning
    • G11C16/34G11C16/06G11C29/00G11C29/44
    • G11C16/3495G11C29/50G11C2029/5002
    • A Flash memory system and a method for data management using the system's sensitivity to charge-disturbing operations and the history of charge-disturbing operations executed by the system are described. In an embodiment of the invention, the sensitivity to charge-disturbing operations is embodied in a disturb-strength matrix in which selected operations have an associated numerical value that is an estimate of the relative strength of that operation to cause disturbances in charge that result in data errors. The disturb-strength matrix can also include the direction of the error which indicates either a gain or loss of charge. The disturb-strength matrix can be determined by the device conducting a self-test in which charge-disturb errors are provoked by executing a selected operation until a detectable error occurs. In alternative embodiments the disturb-strength matrix is determined by testing selected units from a homogeneous population.
    • 描述了使用系统对充电干扰操作的灵敏度和系统执行的充电干扰操作的历史的数据管理的闪存系统和方法。 在本发明的一个实施例中,对电荷干扰操作的灵敏度体现在干扰强度矩阵中,其中所选择的操作具有相关联的数值,该相关数值是该操作的相对强度的估计,以引起电荷干扰,导致导致 数据错误。 干扰强度矩阵还可以包括指示电荷增益或损失的误差方向。 扰动强度矩阵可以由进行自检的装置确定,其中通过执行所选择的操作而引起充电扰乱错误,直到出现可检测的错误。 在替代实施例中,通过从均匀群体测试所选择的单位来确定干扰强度矩阵。