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1. 发明授权

US07172970B2 Polish method for semiconductor device planarization 有权
标题翻译：用于半导体器件平面化的抛光方法
公开(公告)号：US07172970B2
公开(公告)日：2007-02-06
申请号：US10384641
申请日：2003-03-11
申请人： Zong Huei Lin , Art Yu , Chia Rung Hsu , Teng-Chun Tsai
发明人： Zong Huei Lin , Art Yu , Chia Rung Hsu , Teng-Chun Tsai
IPC分类号： H01L21/461 , H01L21/469
CPC分类号： H01L21/7684 , H01L21/31053 , H01L21/76229 , H01L21/76232
摘要： A polish method for planarization is disclosed. The method uses a combination of a traditional oxide CMP and HSP-CMP (High Selectivity and Planarization) with a fix abrasive pad to meet the requirements of the CMP process for a device feature dimension under 0.18 micron even to 0.09 micron. By using a first polish step with a conventional polish pad and an oxide polish slurry, the non-uniformity of the over-fill thickness of the STI dielectric layer can be firstly removed and a much more smooth and uniform topography favorable for the HSP-CMP process the fix abrasive polishing pad can be obtained. Then the HSP-CMP process with the fix abrasive polishing pad can be performed to provide a planarized surface with accurate dimension control.
摘要翻译：公开了一种用于平坦化的抛光方法。该方法使用传统氧化物CMP和HSP-CMP（高选择性和平面化）与固定磨料垫的组合，以满足在0.18微米甚至0.09微米下的器件特征尺寸的CMP工艺的要求。通过使用具有常规抛光垫和氧化物抛光浆料的第一抛光步骤，可以首先除去STI介电层的过度填充厚度的不均匀性，并且对HSP-CMP有利的更平滑和均匀的形貌可以获得固定磨料抛光垫的工艺。然后可以执行具有固定磨料抛光垫的HSP-CMP工艺，以提供具有精确尺寸控制的平坦化表面。

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