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1. 发明授权

US07212586B2 Direct conversion RF transceiver for wireless communications 有权
标题翻译：直接转换RF收发器用于无线通信
公开(公告)号：US07212586B2
公开(公告)日：2007-05-01
申请号：US10052870
申请日：2002-01-18
申请人： Zhongming Shi , Reza Rofougaran , Arya Reza Behzad
发明人： Zhongming Shi , Reza Rofougaran , Arya Reza Behzad
IPC分类号： H03K9/00 , H04L27/16
CPC分类号： H03G3/3042 , H03J7/04 , H04B1/04 , H04B1/30 , H04B1/408 , H04B2001/0416
摘要： A single chip radio transceiver includes circuitry that enables received wideband RF signals to be down converted to base band frequencies and base band signals to be up converted to wideband RF signals prior to transmission without requiring conversion to an intermediate frequency. The circuitry includes a low noise amplifier, automatic frequency control circuitry for aligning the LO frequency with the frequency of the received RF signals, signal power measuring circuitry for measuring the signal to signal and power ratio and for adjusting frontal and rear amplification stages accordingly, and finally, filtering circuitry to filter high and low frequency interfering signals including DC offset.
摘要翻译：单芯片无线电收发机包括使接收的宽带RF信号下变频到基带频率和基带信号在传输之前被上转换成宽带RF信号的电路，而不需要转换到中频。该电路包括一个低噪声放大器，自动频率控制电路，用于将LO频率与接收到的RF信号的频率对准，信号功率测量电路，用于测量信号与信号和功率比，并相应地调整正面和后置放大级;以及最后，滤波电路对高频和低频干扰信号进行滤波，包括直流偏移。

2. 发明授权

US07032292B2 Method of manufacturing high Q on-chip inductor 有权
标题翻译：制造高Q片上电感的方法
公开(公告)号：US07032292B2
公开(公告)日：2006-04-25
申请号：US10395568
申请日：2003-03-24
申请人： Sissy Kyriazidou , Harry Contopanagos , Reza Rofougaran
发明人： Sissy Kyriazidou , Harry Contopanagos , Reza Rofougaran
IPC分类号： H01F7/06 , H01F5/00 , H01C10/06
CPC分类号： H01L27/08 , H01F17/0006 , H01F17/0013 , Y10T29/4902 , Y10T29/49069 , Y10T29/49071 , Y10T29/49073 , Y10T29/49082 , Y10T29/4914
摘要： A high Q on-chip inductor includes a primary winding and an auxiliary winding that is coupled to receive a proportionally opposite representation of an input of the primary winding. Further, the auxiliary winding has an admittance that is greater than the admittance of the primary winding thereby yielding an asymmetry in the admittances. As such, a push/pull mechanism is obtained in a 2-port system (e.g., 1st and 2nd nodes of the primary winding) that produces a large Q factor for an on-chip inductor.
摘要翻译：高Q片上电感器包括初级绕组和辅助绕组，其被耦合以接收初级绕组的输入的成比例地相反的表示。此外，辅助绕组具有大于初级绕组的导纳的导纳，从而导致导电不对称。因此，在产生大Q因子的2端口系统（例如，初级绕组的1 和2 节点）中获得推/拉机构用于片上电感。

3. 发明授权

US06809623B2 High Q on-chip inductor 失效
标题翻译：高Q片上电感
公开(公告)号：US06809623B2
公开(公告)日：2004-10-26
申请号：US10087614
申请日：2002-03-01
申请人： Sissy Kyriazidou , Harry Contopanagos , Reza Rofougaran
发明人： Sissy Kyriazidou , Harry Contopanagos , Reza Rofougaran
IPC分类号： H01F500
CPC分类号： H01L27/08 , H01F17/0006 , H01F17/0013 , Y10T29/4902 , Y10T29/49069 , Y10T29/49071 , Y10T29/49073 , Y10T29/49082 , Y10T29/4914
摘要： A high Q on-chip inductor includes a primary winding and an auxiliary winding that is coupled to receive a proportionally opposite representation of an input of the primary winding. Further, the auxiliary winding has an admittance that is greater than the admittance of the primary winding thereby yielding an asymmetry in the admittances. As such, a push/pull mechanism is obtained in a 2-port system (e.g., 1st and 2nd nodes of the primary winding) that produces a large Q factor for an on-chip inductor.
摘要翻译：高Q片上电感器包括初级绕组和辅助绕组，其被耦合以接收初级绕组的输入的成比例地相反的表示。此外，辅助绕组具有大于初级绕组的导纳的导纳，从而导致导电不对称。因此，在片内电感器产生大的Q因子的2端口系统（例如，初级绕组的第1和第2个节点）中获得推/拉机构。

4. 发明授权

US06801114B2 Integrated radio having on-chip transformer balun 有权
标题翻译：具有片上变压器平衡 - 不平衡转换器的集成无线电
公开(公告)号：US06801114B2
公开(公告)日：2004-10-05
申请号：US10055425
申请日：2002-01-23
申请人： Hung Yu Yang , Jesse A Castaneda , Reza Rofougaran
发明人： Hung Yu Yang , Jesse A Castaneda , Reza Rofougaran
IPC分类号： H01F500
CPC分类号： H03H7/42 , H01F17/0013 , H01F19/04 , H01F2021/125 , H01L23/5227 , H01L23/645 , H01L2924/0002 , Y10T29/4902 , Y10T29/49135 , H01L2924/00
摘要： A transformer balun is obtained that is symmetrical in structure, provides high current, or high voltage, amplification and has high coupling coefficients while maintaining minimal overall size. The balun structure includes primary and secondary metal windings at separate layer interfaces. The primary and secondary metal windings are symmetrical and can have any number of turns, which is only limited by integrated circuit area and capacitance. Accordingly, the primary and secondary windings may be on as many layers as needed. Further, the primary and/or secondary may include a center tap ground, which enables the winding to be used as a differential port.
摘要翻译：获得在结构上对称的变压器平衡 - 不平衡转换器，提供高电流或高电压放大，并具有高耦合系数，同时保持最小的总体尺寸。平衡 - 不平衡转换器结构包括在单独层接口处的主金属绕组和次级金属绕组。主金属绕组和次级金属绕组是对称的，并且可以具有任何数量的匝数，其仅受集成电路面积和电容的限制。因此，主要和次级绕组可以根据需要在尽可能多的层上。此外，主和/或次级可以包括中心抽头接地，其使得绕组能够用作差动端口。

5. 发明授权

US07236080B2 On-chip high Q inductor 有权
标题翻译：片上高Q电感
公开(公告)号：US07236080B2
公开(公告)日：2007-06-26
申请号：US10944305
申请日：2004-09-17
申请人： Sissy Kyriazidou , Harry Contopanagos , Reza Rofougaran
发明人： Sissy Kyriazidou , Harry Contopanagos , Reza Rofougaran
IPC分类号： H01F5/00 , H03H5/00
CPC分类号： H01L27/08 , H01F17/0006 , H01F17/0013 , Y10T29/4902 , Y10T29/49069 , Y10T29/49071 , Y10T29/49073 , Y10T29/49082 , Y10T29/4914
摘要： A high-Q on-chip inductor includes a primary winding and an auxiliary winding. The primary winding includes a first node and a second node. The auxiliary winding is operably coupled to increase a quality factor of the primary winding.
摘要翻译：高Q片上电感器包括初级绕组和辅助绕组。初级绕组包括第一节点和第二节点。辅助绕组可操作地耦合以增加初级绕组的品质因数。

6. 发明授权

US07171739B2 Method of manufacturing an on-chip transformer balun 失效
标题翻译：制造片上变压器平衡不平衡变压器的方法
公开(公告)号：US07171739B2
公开(公告)日：2007-02-06
申请号：US10727378
申请日：2003-12-04
申请人： Hung Yu (David) Yang , Jesse A. Castaneda , Reza Rofougaran
发明人： Hung Yu (David) Yang , Jesse A. Castaneda , Reza Rofougaran
IPC分类号： H01F7/06
CPC分类号： H03H7/42 , H01F17/0013 , H01F19/04 , H01F2021/125 , H01L23/5227 , H01L23/645 , H01L2924/0002 , Y10T29/4902 , Y10T29/49135 , H01L2924/00
摘要： A method of manufacturing an on-chip transformer balun includes creating, on a semiconductor substrate, a primary winding having at least one substantially symmetrical primary turn on a first dielectric layer and at least one metal bridge on a second layer. A secondary winding is created on the semiconductor substrate, the secondary winding having at least one substantially symmetrical secondary turn on a third dielectric layer and at least one metal bridge on a fourth dielectric layer. In an alternative embodiment, the primary winding has at least one first primary turn on a first dielectric layer and at least one second primary turn on a second dielectric layer and at least one via that operably connects the first primary turn to the second primary turn. The secondary winding has at least one first secondary turn on a third dielectric layer and at least one second secondary turn on a fourth dielectric layer.
摘要翻译：制造片上变压器平衡 - 不平衡变压器的方法包括在半导体衬底上形成在第一介电层上具有至少一个基本对称的初级绕组的初级绕组和在第二层上的至少一个金属桥。在半导体衬底上产生次级绕组，次级绕组在第三电介质层上具有至少一个基本对称的次级绕组，在第四介电层上具有至少一个金属桥。在替代实施例中，初级绕组在第一电介质层上具有至少一个第一初级绕组，在第二电介质层上具有至少一个第二初级转弯，以及至少一个通孔，其可操作地将第一初级转弯连接到第二初级转弯。次级绕组在第三电介质层上具有至少一个第一次级转弯，在第四电介质层上具有至少一个第二次级转弯。

7. 发明授权

US06882263B2 On-chip transformer balun 有权
标题翻译：片上变压器平衡 - 不平衡变压器
公开(公告)号：US06882263B2
公开(公告)日：2005-04-19
申请号：US10844930
申请日：2004-05-13
申请人： Hung Yu Yang , Jesse A Castaneda , Reza Rofougaran
发明人： Hung Yu Yang , Jesse A Castaneda , Reza Rofougaran
IPC分类号： H01F17/00 , H01F19/04 , H03H7/42 , H01F5/00
CPC分类号： H03H7/42 , H01F17/0013 , H01F19/04 , H01F2021/125 , H01L23/5227 , H01L23/645 , H01L2924/0002 , Y10T29/4902 , Y10T29/49135 , H01L2924/00
摘要： A transformer balun is obtained that is symmetrical in structure, provides high current, or high voltage, amplification and has high coupling coefficients while maintaining minimal overall size. The balun structure includes primary and secondary metal windings at separate layer interfaces. The primary and secondary metal windings are symmetrical and can have any number of turns, which is only limited by integrated circuit area and capacitance. Accordingly, the, primary and secondary windings may be on as many layers as needed. Further, the primary and/or secondary may include a center tap ground, which enables the winding to be used as a differential port.
摘要翻译：获得在结构上对称的变压器平衡 - 不平衡转换器，提供高电流或高电压放大，并具有高耦合系数，同时保持最小的总体尺寸。平衡 - 不平衡转换器结构包括在单独层接口处的主金属绕组和次级金属绕组。主金属绕组和次级金属绕组是对称的，并且可以具有任何数量的匝数，其仅受集成电路面积和电容的限制。因此，初级和次级绕组可以根据需要在尽可能多的层上。此外，主和/或次级可以包括中心抽头接地，其使得绕组能够用作差动端口。

8. 发明申请

US20050030145A1 On-chip high Q inductor 有权
标题翻译：片上高Q电感
公开(公告)号：US20050030145A1
公开(公告)日：2005-02-10
申请号：US10944305
申请日：2004-09-17
申请人： Sissy Kyriazidou , Harry Contopanagos , Reza Rofougaran
发明人： Sissy Kyriazidou , Harry Contopanagos , Reza Rofougaran
IPC分类号： H01F17/00 , H01L27/08 , H01F5/00
CPC分类号： H01L27/08 , H01F17/0006 , H01F17/0013 , Y10T29/4902 , Y10T29/49069 , Y10T29/49071 , Y10T29/49073 , Y10T29/49082 , Y10T29/4914
摘要： A high-Q on-chip inductor includes a primary winding and an auxiliary winding. The primary winding includes a first node and a second node. The auxiliary winding is operably coupled to increase a quality factor of the primary winding.
摘要翻译：高Q片上电感器包括初级绕组和辅助绕组。初级绕组包括第一节点和第二节点。辅助绕组可操作地耦合以增加初级绕组的品质因数。

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