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1. 发明授权

US06224669B1 Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon 有权
标题翻译：制造具有与硅结晶的碱土金属氧化物界面的半导体结构的方法
公开(公告)号：US06224669B1
公开(公告)日：2001-05-01
申请号：US09662390
申请日：2000-09-14
申请人： Zhiyi Yi , Ravindranath Droopad , Corey Daniel Overgaard , Jamal Ramdani , Jay A. Curless , Jerald A. Hallmark , William J. Ooms , Jun Wang
发明人： Zhiyi Yi , Ravindranath Droopad , Corey Daniel Overgaard , Jamal Ramdani , Jay A. Curless , Jerald A. Hallmark , William J. Ooms , Jun Wang
IPC分类号： C03B2514
CPC分类号： H01L21/31691 , C30B23/02 , C30B25/02 , C30B29/16 , H01L21/31604 , H01L28/56
摘要： A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, oxygen, and a metal in the form XSiO2, where X is a metal.
摘要翻译：一种制造半导体结构的方法包括以下步骤：提供具有表面（12）的硅衬底（10）; 在所述硅衬底的表面上形成包含硅，氧和金属的单原子层的界面（14）; 以及在界面上形成一层或多层单晶氧化物（26）。该界面包括硅，氧和XSiO 2形式的金属的原子层，其中X是金属。

2. 发明授权

US06241821B1 Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon 有权
公开(公告)号：US06241821B1
公开(公告)日：2001-06-05
申请号：US09273929
申请日：1999-03-22
申请人： Zhiyi Yu , Ravindranath Droopad , Corey Daniel Overgaard , Jamal Ramdani , Jay A. Curless , Jerald A. Hallmark , William J. Ooms , Jun Wang
发明人： Zhiyi Yu , Ravindranath Droopad , Corey Daniel Overgaard , Jamal Ramdani , Jay A. Curless , Jerald A. Hallmark , William J. Ooms , Jun Wang
IPC分类号： C30B2514
CPC分类号： C30B23/02 , C30B25/02 , C30B29/16 , C30B29/30
摘要： A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, oxygen, and a metal in the form XSiO2, where X is a metal.

3. 发明授权

US06589856B2 Method and apparatus for controlling anti-phase domains in semiconductor structures and devices 失效
标题翻译：用于控制半导体结构和器件中的反相畴的方法和装置
公开(公告)号：US06589856B2
公开(公告)日：2003-07-08
申请号：US09921905
申请日：2001-08-06
申请人： Jay A. Curless
发明人： Jay A. Curless
IPC分类号： H01L2136
CPC分类号： C30B25/18 , C30B25/02 , C30B29/22 , H01L21/02197 , H01L21/02381 , H01L21/02488 , H01L21/02505 , H01L21/02513 , H01L21/02521 , H01L21/31691
摘要： High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer has a lattice registry to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. The layers of the semiconductor structure may be manufactured in such a way as to control the formation of anti-phase domains so that the structure may operate without the deleterious effects associated with such defects. Such manufacture may include heat treating the substrate to essentially or completely eliminate single steps (anti-phase domains) by forming double steps that can transfer to the oxide interface layer and suppress the formation of anti-phase domains by forming double step therein, in preference to single steps.
摘要翻译：通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。容纳缓冲层具有与下面的硅晶片和上覆的单晶材料层两者的晶格对准。通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。半导体结构的层可以以控制反相畴的形成的方式制造，使得结构可以在没有与这种缺陷相关联的有害影响的情况下运行。这样的制造可以包括通过形成可以转移到氧化物界面层并且通过在其中形成双重步骤来抑制反相结构域的形成的双重步骤来热处理基材以基本上或完全消除单个步骤（反相畴）单步。

4. 发明授权

US07141857B2 Semiconductor structures and methods of fabricating semiconductor structures comprising hafnium oxide modified with lanthanum, a lanthanide-series metal, or a combination thereof 有权
公开(公告)号：US07141857B2
公开(公告)日：2006-11-28
申请号：US10883180
申请日：2004-06-30
申请人： Zhiyi Yu , Jay A. Curless , Yong Liang , Alexandra Navrotsky , Sergey Ushakov , Bich-Yen Nguyen , Alexander Demkov
发明人： Zhiyi Yu , Jay A. Curless , Yong Liang , Alexandra Navrotsky , Sergey Ushakov , Bich-Yen Nguyen , Alexander Demkov
IPC分类号： H01L29/94 , H01L21/469
CPC分类号： H01L21/02181 , C23C14/0026 , C23C14/083 , H01L21/02192 , H01L21/0234 , H01L21/28194 , H01L21/3115 , H01L21/31645 , H01L29/513 , H01L29/517
摘要： Semiconductor structures and processes for fabricating semiconductor structures comprising hafnium oxide layers modified with lanthanum oxide or a lanthanide-series metal oxide are provided. A semiconductor structure in accordance with an embodiment of the invention comprises an amorphous layer of hafnium oxide overlying a substrate. A lanthanum-containing dopant or a lanthanide-series metal-containing dopant is comprised within the amorphous layer of hafnium oxide. The process comprises growing an amorphous layer of hafnium oxide overlying a substrate. The amorphous layer of hafnium oxide is doped with a dopant having the chemical formulation LnOx, where Ln is lanthanum, a lanthanide-series metal, or a combination thereof, and X is any number greater than zero. The doping step may be performed during or after growth of the amorphous layer of hafnium oxide.

5. 发明授权

US06852588B1 Methods of fabricating semiconductor structures comprising epitaxial Hf3Si2 layers 有权
标题翻译：制造包括外延Hf 3 Si 2层的半导体结构的方法
公开(公告)号：US06852588B1
公开(公告)日：2005-02-08
申请号：US10883181
申请日：2004-06-30
申请人： Zhiyi Yu , Jay A. Curless , Yong Liang
发明人： Zhiyi Yu , Jay A. Curless , Yong Liang
IPC分类号： H01L21/285 , H01L21/8242
CPC分类号： H01L21/28518
摘要： Methods are provided for fabricating semiconductor structures and semiconductor device structures utilizing epitaxial Hf3Si2 layers. A process in accordance with one embodiment of the invention begins by disposing a silicon substrate in a processing chamber. The pressure within the processing chamber and a temperature of the silicon substrate in the range of approximately 250° C. to approximately 700° C. is established. A layer of Hf3Si2 then is grown overlying the silicon substrate at a rate in the range of about one (1) to about five (5) monolayers per minute.
摘要翻译：提供了用于制造使用外延Hf 3 Si 2层的半导体结构和半导体器件结构的方法。根据本发明的一个实施例的方法开始于将硅衬底设置在处理室中。处理室内的压力和硅衬底的温度在大约250℃至大约700℃的范围内。然后以约1（1）至约5（5）单层/分钟的速率在硅衬底上生长一层Hf 3 Si 2。

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