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1. 发明授权

US07495303B2 Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements 有权
标题翻译：具有自旋工程插入层的磁性元件和使用磁性元件的MRAM器件
公开(公告)号：US07495303B2
公开(公告)日：2009-02-24
申请号：US11699160
申请日：2007-01-29
申请人： Zhitao Diao , Yiming Huai , Thierry Valet , Paul P. Nguyen , Mahendra Pakala
发明人： Zhitao Diao , Yiming Huai , Thierry Valet , Paul P. Nguyen , Mahendra Pakala
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15 , H01L27/22
CPC分类号： H01F10/3272 , B82Y25/00 , B82Y40/00 , H01F10/30 , H01F41/302 , H01L43/10
摘要： A method and system include providing a single pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element. The free layer is a simple free layer. In one aspect, the method and system include providing a spin engineered layer adjacent to the free layer. The spin engineered layer is configured to more strongly scatter majority electrons than minority electrons. In another aspect, at least one of the pinned, free, and spacer layers is a spin engineered layer having an internal spin engineered layer configured to more strongly scatter majority electrons than minority electrons. In this aspect, the magnetic element may include another pinned layer and a barrier layer between the free and pinned layers.
摘要翻译：一种方法和系统包括在被钉扎层和自由层之间提供单个钉扎层，自由层和间隔层。间隔层是非磁性的。磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。自由层是一个简单的自由层。在一个方面，该方法和系统包括提供与自由层相邻的旋转工程化层。旋转工程层被配置为比少数电子更强烈地散射多数电子。在另一方面，被钉扎，自由和间隔层中的至少一个是具有内部自旋工程化层的纺丝工程层，其被配置成比少数电子更强烈地散射多数电子。在这方面，磁性元件可以包括另一被钉扎层和位于游离层和钉扎层之间的阻挡层。

2. 发明授权

US07369427B2 Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements 有权
标题翻译：具有自旋工程插入层的磁性元件和使用磁性元件的MRAM器件
公开(公告)号：US07369427B2
公开(公告)日：2008-05-06
申请号：US10938219
申请日：2004-09-09
申请人： Zhitao Diao , Yiming Huai , Thierry Valet , Paul P. Nguyen , Mahendra Pakala
发明人： Zhitao Diao , Yiming Huai , Thierry Valet , Paul P. Nguyen , Mahendra Pakala
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： H01F10/3272 , B82Y25/00 , B82Y40/00 , H01F10/30 , H01F41/302 , H01L43/10
摘要： A method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element. In one aspect, the method and system include providing a spin engineered layer adjacent to the free layer. The spin engineered layer is configured to more strongly scatter majority electrons than minority electrons. In another aspect, at least one of the pinned, free, and spacer layers is a spin engineered layer having an internal spin engineered layer configured to more strongly scatter majority electrons than minority electrons. In this aspect, the magnetic element may include another pinned layer and a barrier layer between the free and pinned layers.
摘要翻译：一种方法和系统包括在被钉扎层和自由层之间提供钉扎层，自由层和间隔层。间隔层是非磁性的。磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。在一个方面，该方法和系统包括提供与自由层相邻的旋转工程化层。旋转工程层被配置为比少数电子更强烈地散射多数电子。在另一方面，被钉扎，自由和间隔层中的至少一个是具有内部自旋工程化层的纺丝工程层，其被配置成比少数电子更强烈地散射多数电子。在这方面，磁性元件可以包括另一被钉扎层和位于游离层和钉扎层之间的阻挡层。

3. 发明申请

US20070120211A1 Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements 有权
标题翻译：具有自旋工程插入层的磁性元件和使用磁性元件的MRAM器件
公开(公告)号：US20070120211A1
公开(公告)日：2007-05-31
申请号：US11699160
申请日：2007-01-29
申请人： Zhitao Diao , Yiming Huai , Thierry Valet , Paul Nguyen , Mahendra Pakala
发明人： Zhitao Diao , Yiming Huai , Thierry Valet , Paul Nguyen , Mahendra Pakala
IPC分类号： H01L29/82
CPC分类号： H01F10/3272 , B82Y25/00 , B82Y40/00 , H01F10/30 , H01F41/302 , H01L43/10
摘要： A method and system for providing a magnetic element are described. The method and system include providing a single pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element. The free layer is a simple free layer. In one aspect, the method and system include providing a spin engineered layer adjacent to the free layer. The spin engineered layer is configured to more strongly scatter majority electrons than minority electrons. In another aspect, at least one of the pinned, free, and spacer layers is a spin engineered layer having an internal spin engineered layer configured to more strongly scatter majority electrons than minority electrons. In this aspect, the magnetic element may include another pinned layer and a barrier layer between the free and pinned layers.
摘要翻译：描述了一种用于提供磁性元件的方法和系统。该方法和系统包括在被钉扎层和自由层之间提供单个钉扎层，自由层和间隔层。间隔层是非磁性的。磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。自由层是一个简单的自由层。在一个方面，该方法和系统包括提供与自由层相邻的旋转工程化层。旋转工程层被配置为比少数电子更强烈地散射多数电子。在另一方面，被钉扎，自由和间隔层中的至少一个是具有内部自旋工程化层的纺丝工程层，其被配置成比少数电子更强烈地散射多数电子。在这方面，磁性元件可以包括另一被钉扎层和位于游离层和钉扎层之间的阻挡层。

4. 发明申请

US20060128038A1 Method and system for providing a highly textured magnetoresistance element and magnetic memory 审中-公开
标题翻译：用于提供高纹理磁阻元件和磁存储器的方法和系统
公开(公告)号：US20060128038A1
公开(公告)日：2006-06-15
申请号：US11294766
申请日：2005-12-05
申请人： Mahendra Pakala , Thierry Valet , Yiming Huai , Zhitao Diao
发明人： Mahendra Pakala , Thierry Valet , Yiming Huai , Zhitao Diao
IPC分类号： H01L21/00
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01F41/302 , H01F41/325
摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned layer and the free layer. The spacer layer is insulating and has an ordered crystal structure. The spacer layer is also configured to allow tunneling through the spacer layer. In one aspect, the free layer is comprised of a single magnetic layer having a particular crystal structure and texture with respect to the spacer layer. In another aspect, the free layer is comprised of two sublayers, the first sublayer having a particular crystal structure and texture with respect to the spacer layer and the second sublayer having a lower moment. In still another aspect, the method and system also include providing a second pinned layer and a second spacer layer that is nonmagnetic and resides between the free layer and the second pinned layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括在钉扎层和自由层之间提供钉扎层，自由层和间隔层。间隔层是绝缘的并且具有有序晶体结构。间隔层还被构造成允许隧道穿过间隔层。在一个方面，自由层由相对于间隔层具有特定晶体结构和纹理的单个磁性层组成。在另一方面，自由层由两个子层组成，第一子层相对于间隔层具有特定的晶体结构和纹理，而第二子层具有较低的力矩。在另一方面，该方法和系统还包括提供非磁性的第二被钉扎层和第二间隔层，并且位于自由层和第二钉扎层之间。磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

5. 发明申请

US20060049472A1 Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements 有权
标题翻译：具有自旋工程插入层的磁性元件和使用磁性元件的MRAM器件
公开(公告)号：US20060049472A1
公开(公告)日：2006-03-09
申请号：US10938219
申请日：2004-09-09
申请人： Zhitao Diao , Yiming Huai , Thierry Valet , Paul Nguyen , Mahendra Pakala
发明人： Zhitao Diao , Yiming Huai , Thierry Valet , Paul Nguyen , Mahendra Pakala
IPC分类号： H01L43/00 , H01L29/82
CPC分类号： H01F10/3272 , B82Y25/00 , B82Y40/00 , H01F10/30 , H01F41/302 , H01L43/10
摘要： A method and system for providing a magnetic element is disclosed. The method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element. In one aspect, the method and system include providing a spin engineered layer adjacent to the free layer. The spin engineered layer is configured to more strongly scatter majority electrons than minority electrons. In another aspect, at least one of the pinned, free, and spacer layers is a spin engineered layer having an internal spin engineered layer configured to more strongly scatter majority electrons than minority electrons. In this aspect, the magnetic element may include another pinned layer and a barrier layer between the free and pinned layers.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括在被钉扎层和自由层之间提供钉扎层，自由层和间隔层。间隔层是非磁性的。磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。在一个方面，该方法和系统包括提供与自由层相邻的旋转工程化层。旋转工程层被配置为比少数电子更强烈地散射多数电子。在另一方面，被钉扎，自由和间隔层中的至少一个是具有内部自旋工程化层的纺丝工程层，其被配置成比少数电子更强烈地散射多数电子。在这方面，磁性元件可以包括另一被钉扎层和位于游离层和钉扎层之间的阻挡层。

6. 发明授权

US07289356B2 Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein 有权
标题翻译：使用其中的旋转转移和磁性元件的快速磁存储器件
公开(公告)号：US07289356B2
公开(公告)日：2007-10-30
申请号：US11147944
申请日：2005-06-08
申请人： Zhitao Diao , Yiming Huai , Mahendra Pakala , Zhenghong Qian
发明人： Zhitao Diao , Yiming Huai , Mahendra Pakala , Zhenghong Qian
IPC分类号： G11C7/00
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells, a plurality of word lines, and a plurality of bit lines. Each of the plurality of magnetic storage cells includes a plurality of magnetic elements and at least one selection transistor. Each of the plurality of magnetic elements is capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element. Each of the plurality of magnetic elements has a first end and a second end. The at least one selection transistor is coupled to the first end of each of the plurality of magnetic elements. The plurality of word lines is coupled with the plurality of selection transistors and selectively enables a portion of the plurality of selection transistors.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括提供多个磁存储单元，多个字线和多个位线。多个磁存储单元中的每一个包括多个磁性元件和至少一个选择晶体管。多个磁性元件中的每一个能够通过由磁性元件驱动的写入电流使用自旋转移感应开关来编程。多个磁性元件中的每一个具有第一端和第二端。所述至少一个选择晶体管耦合到所述多个磁性元件中的每一个的第一端。多个字线与多个选择晶体管耦合，并且选择性地使能多个选择晶体管的一部分。

7. 发明授权

US07888755B2 Magnetic storage device with intermediate layers having different sheet resistivities 有权
标题翻译：具有中间层具有不同片电阻率的磁存储装置
公开(公告)号：US07888755B2
公开(公告)日：2011-02-15
申请号：US11235384
申请日：2005-09-26
申请人： Masanori Hosomi , Kazuhiro Ohba , Hiroshi Kano , Yiming Huai , Zhitao Diao , Mahendra Pakala
发明人： Masanori Hosomi , Kazuhiro Ohba , Hiroshi Kano , Yiming Huai , Zhitao Diao , Mahendra Pakala
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： G11C11/16
摘要： A storage element 3 has an arrangement in which magnetization fixed layers 31 and 32 are provided above and below a storage layer 17 for storing information based on the magnetization state of a magnetic material through intermediate layers 16 and 18, directions of magnetizations M15 and M19 of ferromagnetic layers 15 and 19 closest to the storage layer 17 of the magnetization fixed layers 31 and 32 above and below the storage layer 17 are opposite to each other, the two intermediate layers 16 and 18 above and below the storage layer 17 have a significant difference between sheet resistivity values thereof and in which the direction of a magnetization M1 of the storage layer 17 is changed with application of an electric current to the lamination layer direction to record information on the storage layer 17.
摘要翻译：存储元件3具有这样的配置，其中磁化固定层31和32设置在存储层17的上方和下方，用于基于通过中间层16和18的磁性材料的磁化状态来存储信息，磁化M15和M19的方向最靠近存储层17上方和下方的磁化固定层31和32的存储层17的铁磁层15和19彼此相对，存储层17上方和下方的两个中间层16和18具有显着差异在其电阻率值之间，并且其中存储层17的磁化M1的方向随施加到层压层方向的电流而改变以在存储层17上记录信息。

8. 发明申请

US20060279981A1 Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein 有权
标题翻译：使用其中的旋转转移和磁性元件的快速磁存储器件
公开(公告)号：US20060279981A1
公开(公告)日：2006-12-14
申请号：US11147944
申请日：2005-06-08
申请人： Zhitao Diao , Yiming Huai , Mahendra Pakala , Zhenghong Qian
发明人： Zhitao Diao , Yiming Huai , Mahendra Pakala , Zhenghong Qian
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells, a plurality of word lines, and a plurality of bit lines. Each of the plurality of magnetic storage cells includes a plurality of magnetic elements and at least one selection transistor. Each of the plurality of magnetic elements is capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element. Each of the plurality of magnetic elements has a first end and a second end. The at least one selection transistor is coupled to the first end of each of the plurality of magnetic elements. The plurality of word lines is coupled with the plurality of selection transistors and selectively enables a portion of the plurality of selection transistors.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括提供多个磁存储单元，多个字线和多个位线。多个磁存储单元中的每一个包括多个磁性元件和至少一个选择晶体管。多个磁性元件中的每一个能够通过由磁性元件驱动的写入电流使用自旋转移感应开关来编程。多个磁性元件中的每一个具有第一端和第二端。所述至少一个选择晶体管耦合到所述多个磁性元件中的每一个的第一端。多个字线与多个选择晶体管耦合，并且选择性地使能多个选择晶体管的一部分。

9. 发明授权

US07242045B2 Spin transfer magnetic element having low saturation magnetization free layers 有权
标题翻译：具有低饱和磁化自由层的自旋转移磁性元件
公开(公告)号：US07242045B2
公开(公告)日：2007-07-10
申请号：US10783416
申请日：2004-02-19
申请人： Paul P. Nguyen , Yiming Huai , Zhitao Diao , Frank Albert
发明人： Paul P. Nguyen , Yiming Huai , Zhitao Diao , Frank Albert
IPC分类号： H01L29/76
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/16 , H01F10/3263 , H01F10/3272 , H01F41/303
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括固定，非磁性间隔物和自由层。间隔层位于固定层和自由层之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。磁性元件还可以包括阻挡层，第二被钉扎层。或者，包括第二固定和第二间隔层和静电耦合到自由层的第二自由层。在一个方面，自由层包括用非磁性材料稀释的铁磁材料和/或亚铁磁掺杂以提供低的饱和磁化强度。

10. 发明授权

US08582253B1 Magnetic sensor having a high spin polarization reference layer 有权
标题翻译：具有高自旋极化参考层的磁传感器
公开(公告)号：US08582253B1
公开(公告)日：2013-11-12
申请号：US13488219
申请日：2012-06-04
申请人： Yuankai Zheng , Qunwen Leng , Mahendra Pakala , Zhitao Diao , Christian Kaiser , Cheng-Han Yang
发明人： Yuankai Zheng , Qunwen Leng , Mahendra Pakala , Zhitao Diao , Christian Kaiser , Cheng-Han Yang
IPC分类号： G11B5/39
CPC分类号： G11B5/3967 , G01R33/093 , G01R33/098 , G11B5/1278 , G11B5/3906 , H01L43/08
摘要： A magnetic sensor configured to reside in proximity to a recording medium during use having a high spin polarization reference layer stack above AFM layers. The reference layer stack comprises a first boron-free ferromagnetic layer above the AFM coupling layer; a magnetic coupling layer on and in contact with the first boron-free ferromagnetic layer; a second ferromagnetic layer comprising boron deposited on and contact with the magnetic coupling layer; and a boron-free third ferromagnetic layer on and in contact the second ferromagnetic layer. A barrier layer is deposited on and in contact with the boron-free third ferromagnetic layer. In one aspect of the invention, the magnetic coupling layer may comprise at least one of Ta, Ti, or Hf. A process for providing the magnetic sensor is also provided.
摘要翻译：磁传感器被配置为在使用期间驻留在记录介质附近，在AFM层上方具有高自旋极化参考层堆叠。参考层堆叠包括在AFM耦合层上方的第一无硼铁磁层; 与第一无硼铁磁层接触并与之接触的磁耦合层; 第二铁磁层，其包含沉积在磁耦合层上并与其接触的硼; 以及在第二铁磁层上并与之接触的无硼第三铁磁层。阻挡层沉积在无硼第三铁磁层上并与无硼第三铁磁层接触。在本发明的一个方面，磁耦合层可以包括Ta，Ti或Hf中的至少一种。还提供了一种用于提供磁传感器的过程。

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