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1. 发明授权

US07495303B2 Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements 有权
标题翻译：具有自旋工程插入层的磁性元件和使用磁性元件的MRAM器件
公开(公告)号：US07495303B2
公开(公告)日：2009-02-24
申请号：US11699160
申请日：2007-01-29
申请人： Zhitao Diao , Yiming Huai , Thierry Valet , Paul P. Nguyen , Mahendra Pakala
发明人： Zhitao Diao , Yiming Huai , Thierry Valet , Paul P. Nguyen , Mahendra Pakala
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15 , H01L27/22
CPC分类号： H01F10/3272 , B82Y25/00 , B82Y40/00 , H01F10/30 , H01F41/302 , H01L43/10
摘要： A method and system include providing a single pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element. The free layer is a simple free layer. In one aspect, the method and system include providing a spin engineered layer adjacent to the free layer. The spin engineered layer is configured to more strongly scatter majority electrons than minority electrons. In another aspect, at least one of the pinned, free, and spacer layers is a spin engineered layer having an internal spin engineered layer configured to more strongly scatter majority electrons than minority electrons. In this aspect, the magnetic element may include another pinned layer and a barrier layer between the free and pinned layers.
摘要翻译：一种方法和系统包括在被钉扎层和自由层之间提供单个钉扎层，自由层和间隔层。间隔层是非磁性的。磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。自由层是一个简单的自由层。在一个方面，该方法和系统包括提供与自由层相邻的旋转工程化层。旋转工程层被配置为比少数电子更强烈地散射多数电子。在另一方面，被钉扎，自由和间隔层中的至少一个是具有内部自旋工程化层的纺丝工程层，其被配置成比少数电子更强烈地散射多数电子。在这方面，磁性元件可以包括另一被钉扎层和位于游离层和钉扎层之间的阻挡层。

2. 发明授权

US07369427B2 Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements 有权
标题翻译：具有自旋工程插入层的磁性元件和使用磁性元件的MRAM器件
公开(公告)号：US07369427B2
公开(公告)日：2008-05-06
申请号：US10938219
申请日：2004-09-09
申请人： Zhitao Diao , Yiming Huai , Thierry Valet , Paul P. Nguyen , Mahendra Pakala
发明人： Zhitao Diao , Yiming Huai , Thierry Valet , Paul P. Nguyen , Mahendra Pakala
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： H01F10/3272 , B82Y25/00 , B82Y40/00 , H01F10/30 , H01F41/302 , H01L43/10
摘要： A method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element. In one aspect, the method and system include providing a spin engineered layer adjacent to the free layer. The spin engineered layer is configured to more strongly scatter majority electrons than minority electrons. In another aspect, at least one of the pinned, free, and spacer layers is a spin engineered layer having an internal spin engineered layer configured to more strongly scatter majority electrons than minority electrons. In this aspect, the magnetic element may include another pinned layer and a barrier layer between the free and pinned layers.
摘要翻译：一种方法和系统包括在被钉扎层和自由层之间提供钉扎层，自由层和间隔层。间隔层是非磁性的。磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。在一个方面，该方法和系统包括提供与自由层相邻的旋转工程化层。旋转工程层被配置为比少数电子更强烈地散射多数电子。在另一方面，被钉扎，自由和间隔层中的至少一个是具有内部自旋工程化层的纺丝工程层，其被配置成比少数电子更强烈地散射多数电子。在这方面，磁性元件可以包括另一被钉扎层和位于游离层和钉扎层之间的阻挡层。

3. 发明申请

US20070120211A1 Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements 有权
标题翻译：具有自旋工程插入层的磁性元件和使用磁性元件的MRAM器件
公开(公告)号：US20070120211A1
公开(公告)日：2007-05-31
申请号：US11699160
申请日：2007-01-29
申请人： Zhitao Diao , Yiming Huai , Thierry Valet , Paul Nguyen , Mahendra Pakala
发明人： Zhitao Diao , Yiming Huai , Thierry Valet , Paul Nguyen , Mahendra Pakala
IPC分类号： H01L29/82
CPC分类号： H01F10/3272 , B82Y25/00 , B82Y40/00 , H01F10/30 , H01F41/302 , H01L43/10
摘要： A method and system for providing a magnetic element are described. The method and system include providing a single pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element. The free layer is a simple free layer. In one aspect, the method and system include providing a spin engineered layer adjacent to the free layer. The spin engineered layer is configured to more strongly scatter majority electrons than minority electrons. In another aspect, at least one of the pinned, free, and spacer layers is a spin engineered layer having an internal spin engineered layer configured to more strongly scatter majority electrons than minority electrons. In this aspect, the magnetic element may include another pinned layer and a barrier layer between the free and pinned layers.
摘要翻译：描述了一种用于提供磁性元件的方法和系统。该方法和系统包括在被钉扎层和自由层之间提供单个钉扎层，自由层和间隔层。间隔层是非磁性的。磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。自由层是一个简单的自由层。在一个方面，该方法和系统包括提供与自由层相邻的旋转工程化层。旋转工程层被配置为比少数电子更强烈地散射多数电子。在另一方面，被钉扎，自由和间隔层中的至少一个是具有内部自旋工程化层的纺丝工程层，其被配置成比少数电子更强烈地散射多数电子。在这方面，磁性元件可以包括另一被钉扎层和位于游离层和钉扎层之间的阻挡层。

4. 发明申请

US20060128038A1 Method and system for providing a highly textured magnetoresistance element and magnetic memory 审中-公开
标题翻译：用于提供高纹理磁阻元件和磁存储器的方法和系统
公开(公告)号：US20060128038A1
公开(公告)日：2006-06-15
申请号：US11294766
申请日：2005-12-05
申请人： Mahendra Pakala , Thierry Valet , Yiming Huai , Zhitao Diao
发明人： Mahendra Pakala , Thierry Valet , Yiming Huai , Zhitao Diao
IPC分类号： H01L21/00
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01F41/302 , H01F41/325
摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned layer and the free layer. The spacer layer is insulating and has an ordered crystal structure. The spacer layer is also configured to allow tunneling through the spacer layer. In one aspect, the free layer is comprised of a single magnetic layer having a particular crystal structure and texture with respect to the spacer layer. In another aspect, the free layer is comprised of two sublayers, the first sublayer having a particular crystal structure and texture with respect to the spacer layer and the second sublayer having a lower moment. In still another aspect, the method and system also include providing a second pinned layer and a second spacer layer that is nonmagnetic and resides between the free layer and the second pinned layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括在钉扎层和自由层之间提供钉扎层，自由层和间隔层。间隔层是绝缘的并且具有有序晶体结构。间隔层还被构造成允许隧道穿过间隔层。在一个方面，自由层由相对于间隔层具有特定晶体结构和纹理的单个磁性层组成。在另一方面，自由层由两个子层组成，第一子层相对于间隔层具有特定的晶体结构和纹理，而第二子层具有较低的力矩。在另一方面，该方法和系统还包括提供非磁性的第二被钉扎层和第二间隔层，并且位于自由层和第二钉扎层之间。磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

5. 发明申请

US20060049472A1 Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements 有权
标题翻译：具有自旋工程插入层的磁性元件和使用磁性元件的MRAM器件
公开(公告)号：US20060049472A1
公开(公告)日：2006-03-09
申请号：US10938219
申请日：2004-09-09
申请人： Zhitao Diao , Yiming Huai , Thierry Valet , Paul Nguyen , Mahendra Pakala
发明人： Zhitao Diao , Yiming Huai , Thierry Valet , Paul Nguyen , Mahendra Pakala
IPC分类号： H01L43/00 , H01L29/82
CPC分类号： H01F10/3272 , B82Y25/00 , B82Y40/00 , H01F10/30 , H01F41/302 , H01L43/10
摘要： A method and system for providing a magnetic element is disclosed. The method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element. In one aspect, the method and system include providing a spin engineered layer adjacent to the free layer. The spin engineered layer is configured to more strongly scatter majority electrons than minority electrons. In another aspect, at least one of the pinned, free, and spacer layers is a spin engineered layer having an internal spin engineered layer configured to more strongly scatter majority electrons than minority electrons. In this aspect, the magnetic element may include another pinned layer and a barrier layer between the free and pinned layers.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括在被钉扎层和自由层之间提供钉扎层，自由层和间隔层。间隔层是非磁性的。磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。在一个方面，该方法和系统包括提供与自由层相邻的旋转工程化层。旋转工程层被配置为比少数电子更强烈地散射多数电子。在另一方面，被钉扎，自由和间隔层中的至少一个是具有内部自旋工程化层的纺丝工程层，其被配置成比少数电子更强烈地散射多数电子。在这方面，磁性元件可以包括另一被钉扎层和位于游离层和钉扎层之间的阻挡层。

6. 发明授权

US5961848A Process for producing magnetoresistive transducers 失效
标题翻译：制造磁阻换能器的工艺
公开(公告)号：US5961848A
公开(公告)日：1999-10-05
申请号：US669376
申请日：1996-07-10
申请人： Jean-Claude Jacquet , Thierry Valet
发明人： Jean-Claude Jacquet , Thierry Valet
IPC分类号： G01R33/09 , G11B5/39 , H01L43/12 , B44C1/22
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3173 , H01L43/12 , G11B2005/3996 , Y10T29/49021
摘要： A process for producing magnetoresistive transducers, using microlithographic techniques, where the transducers have magnetic metallic multilayers deposited by sputtering or by molecular beam epitaxy, and forming columns whose side walls will be covered with an insulation and whose tops will be free of this insulation, such that a current is able to flow in the magnetoresistive transducers perpendicular to the plane of the layers so as to exploit a phenomenon of perpendicular giant magnetoresistance. This process includes a step of producing, on one surface of a substrate, a stack including a first conductive layer in contact with a substrate and successive magnetic layers and non-magnetic metallic layers constituting a magnetic metallic multilayer in contact with the conductive layer. The process also includes steps of producing a second conductive layer on the magnetic metallic multilayer, producing a first resin mask having the dimensions of a magnetoresistive sensitive element to be produced and etching, around the mask, the second conductive layer and the magnetic metallic multilayer. Subsequently, the process includes steps of depositing an insulation layer removing the resin mask with the insulation layer lying on the resin mask, and forming an electrical contact on the second conductive layer.
摘要翻译： PCT No.PCT / FR95 / 01484第 371日期：1996年7月10日 102（e）日期1996年7月10日PCT 1995年11月10日PCT PCT。公开号WO96 / 15461 日期1996年5月23日使用微光刻技术制造磁阻换能器的方法，其中换能器具有通过溅射或分子束外延沉积的磁性金属多层，并且形成侧壁将被绝缘体覆盖并且顶部将不含这种绝缘，使得电流能够垂直于层的平面在磁阻传感器中流动，以便利用垂直的巨磁阻的现象。该方法包括在基板的一个表面上制造包括与基板接触的第一导电层和连续的磁性层和构成与导电层接触的磁性金属多层的非磁性金属层的叠层的步骤。该方法还包括在磁性金属多层上制备第二导电层的步骤，产生具有待制造的磁阻敏感元件的尺寸的第一树脂掩模和蚀刻，围绕掩模，第二导电层和磁性金属多层。随后，该方法包括以下步骤：沉积除去树脂掩模的绝缘层，绝缘层位于树脂掩模上，并在第二导电层上形成电接触。

7. 发明授权

US5696447A Magneto-resistive magnetic field sensor with pole pieces and increased sensitivity 失效
标题翻译：具有极片的磁阻磁场传感器和灵敏度增加
公开(公告)号：US5696447A
公开(公告)日：1997-12-09
申请号：US355893
申请日：1994-12-14
申请人： Jean-Marc Coutellier , Nicolas Blanchard , Thierry Valet
发明人： Jean-Marc Coutellier , Nicolas Blanchard , Thierry Valet
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08 , G11B5/33 , G01R33/02 , G01R33/06 , G11B5/127
CPC分类号： G01R33/09
摘要： The invention concerns a magneto-resistive magnetic sensor comprising a magneto-resistive element, the resistance of which varies as a function of the applied magnetic field and two pole pieces that collect the magnetic field to be detected so as to concentrate it in the magneto-resistive element, each pole piece being positioned to partially overlap the magneto-resistive element, a current I passing through this magneto-resistive element, wherein the zones of the magneto-resistive element that are overlapped by pole pieces are cut out such that the current that passes through the magneto-resistive element is located in a zone in the air gap between the two pole pieces.
摘要翻译：本发明涉及一种磁阻磁传感器，其包括磁阻元件，其电阻作为所施加的磁场的函数而变化，并且两个极片收集待检测的磁场，以便将其集中在磁 - 电阻元件，每个极片被定位成与磁阻元件部分重叠，通过该磁阻元件的电流I，其中与磁极片重叠的磁阻元件的区域被切出，使得电流通过磁阻元件的位置位于两个极片之间的气隙中的区域中。

8. 发明授权

US5251088A Magnetic read head with magneto-resistance effect 失效
标题翻译：磁读头具有磁阻效应
公开(公告)号：US5251088A
公开(公告)日：1993-10-05
申请号：US732797
申请日：1991-07-19
申请人： Jean-Marc Coutellier , Thierry Valet , Francois X. Pirot
发明人： Jean-Marc Coutellier , Thierry Valet , Francois X. Pirot
IPC分类号： G11B5/265 , G11B5/31 , G11B5/33 , G11B5/39 , G11B5/49 , G11B5/127
CPC分类号： G11B5/3903 , G11B5/332 , G11B5/3958 , G11B5/4969
摘要： Magnetic read heads with magneto-resistance effect of the multilayer type, are provided in a new arrangement making it possible in particular to facilitate a collective arrangement of these heads. Each read head comprises a magneto-resistance element formed by a sensitive magnetic layer superposed on a stable magnetic layer. Each read head comprises a magnetic circuit in a ring opened by an air gap, the sensitive magnetic layer being inserted in the magnetic circuit in a ring, the stable magnetic layer being outside the ring of the magnetic circuit. The arrangement of the magnetic read heads is particularly adapted for reading high density magnetic storage media.
摘要翻译：提供具有多层型磁阻效应的磁读头以新的布置方式提供，特别是有助于这些磁头的集体布置。每个读取头包括由叠加在稳定磁性层上的敏感磁性层形成的磁阻元件。每个读取头包括由气隙打开的环中的磁路，敏感磁性层以环形方式插入到磁路中，稳定的磁性层位于磁路的环外。磁读头的布置特别适于读取高密度磁存储介质。

9. 发明授权

US07057921B2 Spin barrier enhanced dual magnetoresistance effect element and magnetic memory using the same 有权
标题翻译：旋转屏障增强双磁阻效应元件和磁存储器使用相同
公开(公告)号：US07057921B2
公开(公告)日：2006-06-06
申请号：US10842973
申请日：2004-05-11
申请人： Thierry Valet
发明人： Thierry Valet
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/16
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes first pinned, spacer, free, spin barrier, and second pinned layers. The spacer layer is nonmagnetic and resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer resides between the spacer and spin barrier layers. The spin barrier layer is between the free and second pinned layers. The spin barrier layer is configured to reduce an outer surface contribution to the free layer damping constant. In one aspect, the spin barrier layer has a high areal resistance and may substantially eliminate spin pumping induced damping. In another aspect, the magnetic element also includes a spin accumulation layer between the spin barrier and free layers. The spin accumulation layer has a high conductivity and may have a long spin diffusion length.
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括第一固定，间隔物，自由，自旋屏障和第二固定层。间隔层是非磁性的并且位于被钉扎层和自由层之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。自由层位于间隔物和自旋阻挡层之间。自旋阻挡层在自由和第二被钉扎层之间。自旋阻挡层被配置为减小对自由层阻尼常数的外表面贡献。在一个方面，自旋势垒层具有高的面电阻，并且可以基本上消除自旋泵送诱发的阻尼。在另一方面，磁性元件还包括在自旋屏障和自由层之间的自旋累积层。自旋累积层具有高导电性并且可以具有长的自旋扩散长度。

10. 发明申请

US20050254286A1 Spin barrier enhanced dual magnetoresistance effect element and magnetic memory using the same 有权
标题翻译：旋转屏障增强双磁阻效应元件和磁存储器使用相同
公开(公告)号：US20050254286A1
公开(公告)日：2005-11-17
申请号：US10842973
申请日：2004-05-11
申请人： Thierry Valet
发明人： Thierry Valet
IPC分类号： G11C11/00 , G11C11/16
CPC分类号： H01L43/08 , G11C11/16
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes first pinned, spacer, free, spin barrier, and second pinned layers. The spacer layer is nonmagnetic and resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer resides between the spacer and spin barrier layers. The spin barrier layer is between the free and second pinned layers. The spin barrier layer is configured to reduce an outer surface contribution to the free layer damping constant. In one aspect, the spin barrier layer has a high areal resistance and may substantially eliminate spin pumping induced damping. In another aspect, the magnetic element also includes a spin accumulation layer between the spin barrier and free layers. The spin accumulation layer has a high conductivity and may have a long spin diffusion length.
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括第一固定，间隔物，自由，自旋屏障和第二固定层。间隔层是非磁性的并且位于被钉扎层和自由层之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。自由层位于间隔物和自旋阻挡层之间。自旋阻挡层在自由和第二被钉扎层之间。自旋阻挡层被配置为减小对自由层阻尼常数的外表面贡献。在一个方面，自旋势垒层具有高的面电阻，并且可以基本上消除自旋泵送诱发的阻尼。在另一方面，磁性元件还包括在自旋屏障和自由层之间的自旋累积层。自旋累积层具有高导电性并且可以具有长的自旋扩散长度。

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