专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08582253B1 Magnetic sensor having a high spin polarization reference layer 有权
标题翻译：具有高自旋极化参考层的磁传感器
公开(公告)号：US08582253B1
公开(公告)日：2013-11-12
申请号：US13488219
申请日：2012-06-04
申请人： Yuankai Zheng , Qunwen Leng , Mahendra Pakala , Zhitao Diao , Christian Kaiser , Cheng-Han Yang
发明人： Yuankai Zheng , Qunwen Leng , Mahendra Pakala , Zhitao Diao , Christian Kaiser , Cheng-Han Yang
IPC分类号： G11B5/39
CPC分类号： G11B5/3967 , G01R33/093 , G01R33/098 , G11B5/1278 , G11B5/3906 , H01L43/08
摘要： A magnetic sensor configured to reside in proximity to a recording medium during use having a high spin polarization reference layer stack above AFM layers. The reference layer stack comprises a first boron-free ferromagnetic layer above the AFM coupling layer; a magnetic coupling layer on and in contact with the first boron-free ferromagnetic layer; a second ferromagnetic layer comprising boron deposited on and contact with the magnetic coupling layer; and a boron-free third ferromagnetic layer on and in contact the second ferromagnetic layer. A barrier layer is deposited on and in contact with the boron-free third ferromagnetic layer. In one aspect of the invention, the magnetic coupling layer may comprise at least one of Ta, Ti, or Hf. A process for providing the magnetic sensor is also provided.
摘要翻译：磁传感器被配置为在使用期间驻留在记录介质附近，在AFM层上方具有高自旋极化参考层堆叠。参考层堆叠包括在AFM耦合层上方的第一无硼铁磁层; 与第一无硼铁磁层接触并与之接触的磁耦合层; 第二铁磁层，其包含沉积在磁耦合层上并与其接触的硼; 以及在第二铁磁层上并与之接触的无硼第三铁磁层。阻挡层沉积在无硼第三铁磁层上并与无硼第三铁磁层接触。在本发明的一个方面，磁耦合层可以包括Ta，Ti或Hf中的至少一种。还提供了一种用于提供磁传感器的过程。

2. 发明授权

US08493693B1 Perpendicular magnetic recording transducer with AFM insertion layer 有权
标题翻译：带AFM插入层的垂直磁记录传感器
公开(公告)号：US08493693B1
公开(公告)日：2013-07-23
申请号：US13436694
申请日：2012-03-30
申请人： Yuankai Zheng , Qunwen Leng , Mahendra Pakala , Cheng-Han Yang
发明人： Yuankai Zheng , Qunwen Leng , Mahendra Pakala , Cheng-Han Yang
IPC分类号： G11B5/127
CPC分类号： G11B5/3906 , G01R33/093 , G11B5/3929 , H01F10/30 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetic sensor is configured to reside in proximity to a recording medium during use. The sensor includes a magnetic top shield and a magnetic bottom shield. A top sensor stack is under the magnetic top shield and includes magnetic sensing layers. A bottom sensor stack is between the magnetic bottom shield and the top sensor stack. The bottom sensor stack includes a magnetic seed stack above the bottom shield, an insertion stack above the magnetic seed stack, and an antiferromagnetic (AFM) layer on and in contact with the insertion stack. A pinned layer is above the AFM layer. An AFM coupling layer is above the pinned layer. In some aspects the insertion stack may include at least one of Ti, Hf, Zr, and Ta. In some aspect, the insertion stack includes a layer of elemental Ti. In other aspects, the insertion stack includes multilayer structures.
摘要翻译：磁传感器被配置为在使用期间驻留在记录介质附近。传感器包括磁性顶部屏蔽和磁性底部屏蔽。顶部传感器堆叠在磁性顶部屏蔽下方，并且包括磁感应层。底部传感器堆叠位于磁性底部屏蔽和顶部传感器叠层之间。底部传感器堆叠包括在底部屏蔽物上方的磁性种子堆叠，在磁性种子堆叠上方的插入堆叠，以及与插入堆叠接触并与其接触的反铁磁（AFM）层。被钉扎层位于AFM层之上。 AFM耦合层位于钉扎层之上。在一些方面，插入叠层可以包括Ti，Hf，Zr和Ta中的至少一种。在一些方面，插入堆叠包括元素Ti层。在其他方面，插入堆叠包括多层结构。

3. 发明授权

US08422176B1 Method and system for providing a magnetic read transducer having a bilayer magnetic seed layer 有权
标题翻译：用于提供具有双层磁性种子层的磁读取传感器的方法和系统
公开(公告)号：US08422176B1
公开(公告)日：2013-04-16
申请号：US13297204
申请日：2011-11-15
申请人： Qunwen Leng , Laurence L. Chen , Yimin Guo , Yuankai Zheng , Mahendra Pakala
发明人： Qunwen Leng , Laurence L. Chen , Yimin Guo , Yuankai Zheng , Mahendra Pakala
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , G01R33/093 , G11B5/3929 , H01F10/30 , H01F10/3254 , H01F10/3272
摘要： A method and system for providing a magnetic read transducer is described. The magnetic read transducer includes a bilayer magnetic seed layer, an antiferromagnetic (AFM) layer, and a read sensor. The bilayer magnetic seed layer includes a Ni1-xFex layer and a Ni1-yFey layer on the Ni1-xFex layer, where x is at least 0.3 and not more than 1 and where y is not more than 0.19. The AFM layer resides on the bilayer magnetic seed layer. The read sensor is on the AFM layer.
摘要翻译：描述了一种用于提供磁读取换能器的方法和系统。磁读取传感器包括双层磁性种子层，反铁磁（AFM）层和读取传感器。双层磁性种子层在Ni1-xFex层上包含Ni1-xFex层和Ni1-yFey层，其中x为至少0.3且不大于1，其中y不大于0.19。 AFM层位于双层磁性种子层上。读取传感器位于AFM层上。

4. 发明授权

US08498084B1 Magnetoresistive sensors having an improved free layer 有权
标题翻译：具有改进自由层的磁阻传感器
公开(公告)号：US08498084B1
公开(公告)日：2013-07-30
申请号：US12506978
申请日：2009-07-21
申请人： Qunwen Leng , Christian Kaiser , Yimin Guo , Mahendra Pakala , Sining Mao
发明人： Qunwen Leng , Christian Kaiser , Yimin Guo , Mahendra Pakala , Sining Mao
IPC分类号： G11B5/127
CPC分类号： G01R33/093 , G11B5/3909 , G11B5/3912
摘要： A magnetoresistive sensor having a novel free layer and a method of producing the same are disclosed. The magnetoresistive sensor comprises a pinned layer, a barrier layer disposed over the pinned layer, and a free layer disposed over the barrier layer. The free layer comprises a first magnetic layer disposed over the barrier layer. The first magnetic layer has a positive spin polarization, a positive magnetostriction, and a polycrystalline structure. The free layer further comprises a second magnetic layer disposed over the first magnetic layer. The second magnetic layer has a negative magnetostriction and comprises at least cobalt (Co) and boron (B).
摘要翻译：公开了一种具有新型自由层的磁阻传感器及其制造方法。磁阻传感器包括被钉扎层，设置在钉扎层上的阻挡层和设置在阻挡层上的自由层。自由层包括设置在阻挡层上的第一磁性层。第一磁性层具有正自旋极化，正磁致伸缩和多晶结构。自由层还包括设置在第一磁性层上的第二磁性层。第二磁性层具有负的磁致伸缩，并且至少包括钴（Co）和硼（B）。

5. 发明授权

US08493695B1 Method and system for providing a magnetic read transducer having an improved signal to noise ratio 有权
标题翻译：用于提供具有改善的信噪比的磁读取换能器的方法和系统
公开(公告)号：US08493695B1
公开(公告)日：2013-07-23
申请号：US13170506
申请日：2011-06-28
申请人： Christian Kaiser , Qunwen Leng , Mahendra Pakala , Daniele Mauri
发明人： Christian Kaiser , Qunwen Leng , Mahendra Pakala , Daniele Mauri
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , G01R33/093 , G01R33/098 , G11B5/3929 , H01F10/3272 , H01F41/325 , H01L43/08 , H01L43/12
摘要： A method and system for providing a magnetic read transducer is described. The magnetic read transducer includes a magnetoresistive sensor a shield, and a spin pumping barrier layer. The magnetoresistive sensor includes a pinned layer, a spacer layer, and a free layer. The spacer layer is nonmagnetic and resides between the pinned layer and the free layer. The free layer is between the pinned layer and the shield. The spin pumping barrier layer is between the shield and the free layer.
摘要翻译：描述了一种用于提供磁读取换能器的方法和系统。磁读取传感器包括屏蔽层的磁阻传感器和自旋泵浦阻挡层。磁阻传感器包括钉扎层，间隔层和自由层。间隔层是非磁性的并且位于被钉扎层和自由层之间。自由层位于钉扎层和屏蔽层之间。自旋泵浦阻挡层位于屏蔽层和自由层之间。

6. 发明授权

US08194365B1 Method and system for providing a read sensor having a low magnetostriction free layer 有权
标题翻译：用于提供具有低磁致伸缩自由层的读取传感器的方法和系统
公开(公告)号：US08194365B1
公开(公告)日：2012-06-05
申请号：US12553897
申请日：2009-09-03
申请人： Qunwen Leng , Chando Park , Yimin Guo , Christian Kaiser , Mahendra Pakala , Sining Mao
发明人： Qunwen Leng , Chando Park , Yimin Guo , Christian Kaiser , Mahendra Pakala , Sining Mao
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , G01R33/098 , H01L43/08 , H01L43/10
摘要： A method and system for providing a magnetic structure in magnetic transducer is described. The magnetic structure includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer includes a first magnetic layer, a second magnetic layer, and a magnetic insertion layer between the first magnetic layer and the second magnetic layer. The first magnetic layer has a first magnetostriction. The second magnetic layer has a second magnetostriction opposite to the first magnetostriction. The magnetic insertion layer provides a growth texture barrier between the first magnetic layer and the second magnetic layer.
摘要翻译：描述了一种用于在磁换能器中提供磁结构的方法和系统。磁结构包括钉扎层，非磁性间隔层和自由层。非磁性间隔层位于被钉扎层和自由层之间。自由层包括在第一磁性层和第二磁性层之间的第一磁性层，第二磁性层和磁性插入层。第一磁性层具有第一磁致伸缩。第二磁性层具有与第一磁致伸缩相反的第二磁致伸缩。磁性插入层在第一磁性层和第二磁性层之间提供生长结构屏障。

7. 发明授权

US09093639B2 Methods for manufacturing a magnetoresistive structure utilizing heating and cooling 有权
标题翻译：利用加热和冷却制造磁阻结构的方法
公开(公告)号：US09093639B2
公开(公告)日：2015-07-28
申请号：US13401164
申请日：2012-02-21
申请人： Christian Kaiser , Qunwen Leng , Mahendra Pakala
发明人： Christian Kaiser , Qunwen Leng , Mahendra Pakala
IPC分类号： H01L43/12 , G11B5/31 , G11B5/39 , G01R33/09 , H01F41/30 , H01F10/32
CPC分类号： H01L43/12 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3909 , H01F10/3259 , H01F10/3272 , H01F41/307
摘要： This invention describes a novel tunnel magnetoresistive (TMR) deposition process that can enhance the signal-to-noise ratio (SNR) of a TMR reader. A method of manufacturing a tunnel magnetoresistive sensor includes providing a substrate; forming a first portion of a magnetic tunnel junction (MTJ) structure on the substrate; forming a second portion of the MTJ structure on the substrate; forming a tunnel barrier layer of the MTJ structure between the first portion and the second portion; heating the first portion of the MTJ structure before forming the tunnel barrier layer or after forming at least a portion of the tunnel barrier layer; and cooling the tunnel barrier layer.
摘要翻译：本发明描述了可以增强TMR读取器的信噪比（SNR）的新型隧道磁阻（TMR）沉积工艺。隧道磁阻传感器的制造方法包括提供基板; 在所述衬底上形成磁隧道结（MTJ）结构的第一部分; 在衬底上形成MTJ结构的第二部分; 在所述第一部分和所述第二部分之间形成所述MTJ结构的隧道势垒层; 在形成隧道势垒层之前或在形成隧道势垒层的至少一部分之后加热MTJ结构的第一部分; 并冷却隧道势垒层。

8. 发明授权

US08545999B1 Method and system for providing a magnetoresistive structure 有权
标题翻译：提供磁阻结构的方法和系统
公开(公告)号：US08545999B1
公开(公告)日：2013-10-01
申请号：US12035036
申请日：2008-02-21
申请人： Qunwen Leng , Mahendra Pakala , Yong Shen
发明人： Qunwen Leng , Mahendra Pakala , Yong Shen
IPC分类号： G11B5/39 , H01F10/08 , H01L43/12
CPC分类号： G11B5/3909 , G01R33/098 , H01F10/3272 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A method and system for providing a magnetoresistive structure are described. The magnetoresistive structure includes a first electrode, an insertion layer, a crystalline tunneling barrier layer, and a second electrode. The first electrode includes at least a first magnetic material and boron. The crystalline tunneling barrier layer includes at least one constituent. The insertion layer has a first boron affinity. The at least one constituent of the crystalline tunneling barrier layer has at least a second boron affinity that is less than the first boron affinity. The second electrode includes at least a second magnetic material.
摘要翻译：描述了一种用于提供磁阻结构的方法和系统。磁阻结构包括第一电极，插入层，结晶隧道势垒层和第二电极。第一电极至少包括第一磁性材料和硼。结晶隧道势垒层包括至少一种成分。插入层具有第一硼亲合力。结晶隧道势垒层的至少一个成分具有小于第一硼亲和力的至少第二硼亲和力。第二电极包括至少第二磁性材料。

9. 发明授权

US08537502B1 Method and system for providing a magnetic transducer having improved shield-to-shield spacing 有权
公开(公告)号：US08537502B1
公开(公告)日：2013-09-17
申请号：US12363525
申请日：2009-01-30
申请人： Chando Park , Qunwen Leng , Sangmun Oh , Mahendra Pakala
发明人： Chando Park , Qunwen Leng , Sangmun Oh , Mahendra Pakala
IPC分类号： G11B5/127
CPC分类号： G11B5/3116 , G01R33/093 , G11B5/147 , G11B5/3906 , G11B5/3929 , H01F10/30 , H01F10/3272 , H01L43/08 , Y10T428/1193
摘要： A method and system for providing a magnetic transducer is described. The method and system include providing a magnetic structural barrier layer and a crystalline magnetic layer on the magnetic structural barrier layer. The magnetic structural barrier layer may reside on a shield. The method and system also include providing a nonmagnetic layer on the crystalline magnetic layer. A pinning layer is provided on the nonmagnetic layer. Similarly, a pinned layer is provided on the pinning layer. The pinning layer is magnetically coupled with the pinned layer. The method and system also include providing a free layer and a nonmagnetic spacer layer between the pinned layer and the free layer.

10. 发明授权

US08381391B2 Method for providing a magnetic recording transducer 有权
标题翻译：提供磁记录传感器的方法
公开(公告)号：US08381391B2
公开(公告)日：2013-02-26
申请号：US12493102
申请日：2009-06-26
申请人： Chando Park , Qunwen Leng , Mahendra Pakala
发明人： Chando Park , Qunwen Leng , Mahendra Pakala
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/127 , B82Y10/00 , B82Y25/00 , B82Y40/00 , F27D7/06 , F27D19/00 , G01R33/098 , G11B5/3109 , G11B5/3163 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3268 , H01F41/303 , H01F41/307 , H01L43/08 , H01L43/12 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for providing a magnetic recording transducer is described. The method includes providing a pinned layer for a magnetic element. In one aspect, a portion of a tunneling barrier layer for the magnetic element is provided. The magnetic recording transducer annealed is after the portion of the tunneling barrier layer is provided. The annealing is at a temperature higher than room temperature. A remaining portion of the tunneling barrier layer is provided after the annealing. In another aspect, the magnetic transducer is transferred to a high vacuum annealing apparatus before annealing the magnetic transducer. In this aspect, the magnetic transducer may be annealed before any portion of the tunneling barrier is provided or after at least a portion of the tunneling barrier is provided. The annealing is performed in the high vacuum annealing apparatus. A free layer for the magnetic element is also provided.
摘要翻译：描述了一种用于提供磁记录换能器的方法。该方法包括提供用于磁性元件的钉扎层。在一个方面，提供了用于磁性元件的隧道势垒层的一部分。退火后的磁记录传感器在提供隧道势垒层的部分之后。退火温度高于室温。在退火之后提供隧道势垒层的剩余部分。另一方面，在对磁换能器退火之前，将磁换能器转移到高真空退火装置。在这方面，在提供隧道势垒的任何部分之前或者在提供至少一部分隧道势垒之后，磁换能器可以被退火。在高真空退火装置中进行退火。还提供了用于磁性元件的自由层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式