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    • 1. 发明申请
    • SEMICONDUCTOR DEVICE FOR ELECTRON EMISSION IN A VACUUM
    • 用于真空中电子发射的半导体器件
    • US20140326943A1
    • 2014-11-06
    • US14234328
    • 2012-07-20
    • Jean-Claude JacquetRaphaël AubryMarie-Antoinette PoissonSylvain Delage
    • Jean-Claude JacquetRaphaël AubryMarie-Antoinette PoissonSylvain Delage
    • H01J1/308
    • H01J1/308H01J23/04
    • A semiconductor device for electron emission in a vacuum comprises a stack of two or more semi-conductor layers of N and P type according to sequence N/(P)/N forming a juxtaposition of two head-to-tail NP junctions, in materials belonging to the III-N family, two adjacent layers forming an interface. The semiconductor materials of the layers of the stack close to the vacuum, where the electrons reach a high energy, have a band gap Eg>c/2, where c is the electron affinity of the semiconductor material, the P-type semiconductor layer being obtained partially or completely, by doping impurities of acceptor type or by piezoelectric effect to exhibit a negative fixed charge in any interface between the layers, a positive bias potential applied to the stack supplying, to a fraction of electrons circulating in the stack, the energy needed for emission in the vacuum by an emissive zone of an output layer.
    • 用于真空中电子发射的半导体器件包括根据序列N /(P)/ N的两个或多个N型和P型半导体层的堆叠,形成两个头对尾NP结的并置,材料 属于III-N族,两个相邻的层形成界面。 靠近真空的堆叠层的半导体材料,其中电子达到高能量,具有带隙Eg> c / 2,其中c是半导体材料的电子亲和力,P型半导体层是 通过掺杂受体类型的杂质或通过压电效应来获得部分或完全地获得,以在层之间的任何界面中显示负的固定电荷,施加到堆叠的积极偏置电势提供给堆叠中循环的一部分电子, 需要通过输出层的发射区在真空中发射。
    • 4. 发明授权
    • Process for producing magnetoresistive transducers
    • 制造磁阻换能器的工艺
    • US5961848A
    • 1999-10-05
    • US669376
    • 1996-07-10
    • Jean-Claude JacquetThierry Valet
    • Jean-Claude JacquetThierry Valet
    • G01R33/09G11B5/39H01L43/12B44C1/22
    • B82Y25/00B82Y10/00G01R33/093G11B5/3173H01L43/12G11B2005/3996Y10T29/49021
    • A process for producing magnetoresistive transducers, using microlithographic techniques, where the transducers have magnetic metallic multilayers deposited by sputtering or by molecular beam epitaxy, and forming columns whose side walls will be covered with an insulation and whose tops will be free of this insulation, such that a current is able to flow in the magnetoresistive transducers perpendicular to the plane of the layers so as to exploit a phenomenon of perpendicular giant magnetoresistance. This process includes a step of producing, on one surface of a substrate, a stack including a first conductive layer in contact with a substrate and successive magnetic layers and non-magnetic metallic layers constituting a magnetic metallic multilayer in contact with the conductive layer. The process also includes steps of producing a second conductive layer on the magnetic metallic multilayer, producing a first resin mask having the dimensions of a magnetoresistive sensitive element to be produced and etching, around the mask, the second conductive layer and the magnetic metallic multilayer. Subsequently, the process includes steps of depositing an insulation layer removing the resin mask with the insulation layer lying on the resin mask, and forming an electrical contact on the second conductive layer.
    • PCT No.PCT / FR95 / 01484第 371日期:1996年7月10日 102(e)日期1996年7月10日PCT 1995年11月10日PCT PCT。 公开号WO96 / 15461 日期1996年5月23日使用微光刻技术制造磁阻换能器的方法,其中换能器具有通过溅射或分子束外延沉积的磁性金属多层,并且形成侧壁将被绝缘体覆盖并且顶部将不含 这种绝缘,使得电流能够垂直于层的平面在磁阻传感器中流动,以便利用垂直的巨磁阻的现象。 该方法包括在基板的一个表面上制造包括与基板接触的第一导电层和连续的磁性层和构成与导电层接触的磁性金属多层的非磁性金属层的叠层的步骤。 该方法还包括在磁性金属多层上制备第二导电层的步骤,产生具有待制造的磁阻敏感元件的尺寸的第一树脂掩模和蚀刻,围绕掩模,第二导电层和磁性金属多层。 随后,该方法包括以下步骤:沉积除去树脂掩模的绝缘层,绝缘层位于树脂掩模上,并在第二导电层上形成电接触。
    • 5. 发明授权
    • Semiconductor device for electron emission in a vacuum
    • 用于真空中电子发射的半导体器件
    • US09305734B2
    • 2016-04-05
    • US14234328
    • 2012-07-20
    • Jean-Claude JacquetRaphaël AubryMarie-Antoinette PoissonSylvain Delage
    • Jean-Claude JacquetRaphaël AubryMarie-Antoinette PoissonSylvain Delage
    • H01J1/308H01J23/04
    • H01J1/308H01J23/04
    • A semiconductor device for electron emission in a vacuum comprises a stack of two or more semi-conductor layers of N and P type according to sequence N/(P)/N forming a juxtaposition of two head-to-tail NP junctions, in materials belonging to the III-N family, two adjacent layers forming an interface. The semiconductor materials of the layers of the stack close to the vacuum, where the electrons reach a high energy, have a band gap Eg>c/2, where c is the electron affinity of the semiconductor material, the P-type semiconductor layer being obtained partially or completely, by doping impurities of acceptor type or by piezoelectric effect to exhibit a negative fixed charge in any interface between the layers, a positive bias potential applied to the stack supplying, to a fraction of electrons circulating in the stack, the energy needed for emission in the vacuum by an emissive zone of an output layer.
    • 用于真空中电子发射的半导体器件包括根据序列N /(P)/ N的两个或多个N型和P型半导体层的堆叠,形成两个头对尾NP连接的并置,材料 属于III-N族,两个相邻的层形成界面。 靠近真空的堆叠层的半导体材料,其中电子达到高能量,具有带隙Eg> c / 2,其中c是半导体材料的电子亲和力,P型半导体层是 通过掺杂受体类型的杂质或通过压电效应来获得部分或完全地获得,以在层之间的任何界面中显示负的固定电荷,施加到堆叠的积极偏置电势提供给堆叠中循环的一部分电子, 需要通过输出层的发射区在真空中发射。