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1. 发明授权

US08674641B2 System and method for regulating motor rotation speed 有权
标题翻译：用于调节电机转速的系统和方法
公开(公告)号：US08674641B2
公开(公告)日：2014-03-18
申请号：US12880735
申请日：2010-09-13
申请人： Zhihong Zhang , XuJiang Huang
发明人： Zhihong Zhang , XuJiang Huang
IPC分类号： H05K7/20
CPC分类号： H02P6/08 , H02P6/16 , H03K4/06
摘要： The present invention relates to a system and method controlling motor rotation speed and provides a cooling system and method configured to control a temperature associated with an integrated circuit. The cooling system includes a brushless motor, a temperature monitoring input, a clock input, and a motor controller. The motor controller is configured to control the rotational speed of the motor using at least a speed control method by comparing the environmental temperature signal to a predetermined threshold: if the environmental temperature signal is less than the predetermined threshold T1 or higher than T2, controlling the rotational speed of the motor uses the speed control method and only one of the environmental temperature signal and the clock signal; and if the environmental temperature signal is greater than the predetermined threshold T1 and less than T2, controlling the rotational speed of the motor uses the speed control method and both of the environmental temperature signal and the clock signal.
摘要翻译：本发明涉及一种控制电机转速的系统和方法，并提供一种配置成控制与集成电路相关的温度的冷却系统和方法。冷却系统包括无刷电机，温度监控输入，时钟输入和电机控制器。电动机控制器被配置为通过将环境温度信号与预定阈值相比较来使用至少一种速度控制方法来控制电动机的转速：如果环境温度信号小于预定阈值T1或高于T2，则控制电机的转速采用速度控制方式，只有环境温度信号和时钟信号之一; 并且如果环境温度信号大于预定阈值T1且小于T2，则控制电动机的转速使用速度控制方法以及环境温度信号和时钟信号两者。

2. 发明申请

US20110299247A1 System and Method for Regulating Motor Rotation Speed 有权
标题翻译：用于调节电机转速的系统和方法
公开(公告)号：US20110299247A1
公开(公告)日：2011-12-08
申请号：US12880735
申请日：2010-09-13
申请人： Zhihong Zhang , XuJiang Huang
发明人： Zhihong Zhang , XuJiang Huang
IPC分类号： H05K7/20 , H03K3/01
CPC分类号： H02P6/08 , H02P6/16 , H03K4/06
摘要： The present invention relates to a system and method controlling motor rotation speed and provides a cooling system and method configured to control a temperature associated with an integrated circuit. The cooling system includes a brushless motor, a temperature monitoring input, a clock input, and a motor controller. The motor controller is configured to control the rotational speed of the motor using at least a speed control method by comparing the environmental temperature signal to a predetermined threshold: if the environmental temperature signal is less than the predetermined threshold T1 or higher than T2, controlling the rotational speed of the motor uses the speed control method and only one of the environmental temperature signal and the clock signal; and if the environmental temperature signal is greater than the predetermined threshold T1 and less than T2, controlling the rotational speed of the motor uses the speed control method and both of the environmental temperature signal and the clock signal.
摘要翻译：本发明涉及一种控制电机转速的系统和方法，并提供一种配置成控制与集成电路相关的温度的冷却系统和方法。冷却系统包括无刷电机，温度监控输入，时钟输入和电机控制器。电动机控制器被配置为通过将环境温度信号与预定阈值相比较来使用至少一种速度控制方法来控制电动机的转速：如果环境温度信号小于预定阈值T1或高于T2，则控制电机的转速采用速度控制方式，只有环境温度信号和时钟信号之一; 并且如果环境温度信号大于预定阈值T1且小于T2，则控制电动机的转速使用速度控制方法以及环境温度信号和时钟信号两者。

3. 发明申请

US20100109730A1 PWM CONTROL CIRCUIT HAVING ADJUSTABLE MINIMUM DUTY CYCLE 有权
标题翻译：具有可调整最小占空比的PWM控制电路
公开(公告)号：US20100109730A1
公开(公告)日：2010-05-06
申请号：US12425366
申请日：2009-04-16
申请人： Zhihong Zhang , Xujiang Huang
发明人： Zhihong Zhang , Xujiang Huang
IPC分类号： H03K3/017
CPC分类号： H03K5/1565 , H02M3/156 , H03K3/017 , H03K7/08
摘要： A pulse width modulated (PWM) controller includes a triangle wave generation circuit generating a triangle wave signal to oscillate between an upper limit voltage and a lower limit voltage. The upper limit voltage and the lower limit voltage are adjustable in response to changes in the power supply voltage. A pulse generation circuit is coupled to the triangle wave generation circuit and a minimum duty cycle setting voltage, and is configured to generate a PWM pulse signal with a minimum duty cycle determined by the relative magnitude of the triangle wave signal and the minimum duty cycle reference voltage. In an embodiment, the minimum duty cycle is increased when the power supply voltage is lower than a predetermined reference voltage.
摘要翻译：脉宽调制（PWM）控制器包括产生三角波信号的三角波产生电路，以在上限电压和下限电压之间振荡。上限电压和下限电压可根据电源电压的变化而调节。脉冲发生电路耦合到三角波产生电路和最小占空比设置电压，并且被配置为产生具有由三角波信号的相对幅度和最小占空比基准确定的最小占空比的PWM脉冲信号电压。在一个实施例中，当电源电压低于预定参考电压时，最小占空比增加。

4. 发明申请

US20100164581A1 PULSED WIDTH MODULATED CONTROL METHOD AND APPARATUS 有权
标题翻译：脉宽调制控制方法和装置
公开(公告)号：US20100164581A1
公开(公告)日：2010-07-01
申请号：US12500923
申请日：2009-07-10
申请人： Zhihong Zhang , Xujiang Huang
发明人： Zhihong Zhang , Xujiang Huang
IPC分类号： H03K3/017
CPC分类号： H02P6/085 , F04D27/004 , H02P6/26 , H02P27/08
摘要： A pulse width modulated (PWM) controller has an input terminal for receiving a pulsed input signal having a first duty cycle, a power supply terminal for receiving a power supply voltage. a minimum duty cycle reference voltage signal, and a control circuit for providing a pulse-width-modulated (PWM) output signal having a second duty cycle related to the first duty cycle of the pulsed input signal. The PWM output control signal having a minimum duty cycle that is adjustable in response to a change in the power supply voltage. In an embodiment, the second duty cycle and the first duty cycle are correlated in a substantially linear relationship. In an embodiment, the PWM control circuit also has a triangle wave generation circuit for generating a triangle wave signal configured to oscillate between an upper limit voltage and a lower limit voltage, which are adjustable in response to a change in the power supply voltage.
摘要翻译：脉冲宽度调制（PWM）控制器具有用于接收具有第一占空比的脉冲输入信号的输入端子，用于接收电源电压的电源端子。最小占空比参考电压信号，以及用于提供具有与脉冲输入信号的第一占空比相关的第二占空比的脉冲宽度调制（PWM）输出信号的控制电路。 PWM输出控制信号具有响应于电源电压变化而可调节的最小占空比。在一个实施例中，第二占空比和第一占空比以基本线性关系相关。在一个实施例中，PWM控制电路还具有三角波产生电路，用于产生三角波信号，该三角波信号被配置为在上限电压和下限电压之间振荡，这可以响应于电源电压的变化而调节。

5. 发明授权

US08120402B2 PWM control circuit having adjustable minimum duty cycle 有权
标题翻译： PWM控制电路具有可调整的最小占空比
公开(公告)号：US08120402B2
公开(公告)日：2012-02-21
申请号：US12425366
申请日：2009-04-16
申请人： Zhihong Zhang , Xujiang Huang
发明人： Zhihong Zhang , Xujiang Huang
IPC分类号： H03K3/017 , H03K5/04 , H03K7/08
CPC分类号： H03K5/1565 , H02M3/156 , H03K3/017 , H03K7/08
摘要： A pulse width modulated (PWM) controller includes a triangle wave generation circuit generating a triangle wave signal to oscillate between an upper limit voltage and a lower limit voltage. The upper limit voltage and the lower limit voltage are adjustable in response to changes in the power supply voltage. A pulse generation circuit is coupled to the triangle wave generation circuit and a minimum duty cycle setting voltage, and is configured to generate a PWM pulse signal with a minimum duty cycle determined by the relative magnitude of the triangle wave signal and the minimum duty cycle reference voltage. In an embodiment, the minimum duty cycle is increased when the power supply voltage is lower than a predetermined reference voltage.
摘要翻译：脉宽调制（PWM）控制器包括产生三角波信号的三角波产生电路，以在上限电压和下限电压之间振荡。上限电压和下限电压可根据电源电压的变化而调节。脉冲发生电路耦合到三角波产生电路和最小占空比设置电压，并且被配置为产生具有由三角波信号的相对幅度和最小占空比基准确定的最小占空比的PWM脉冲信号电压。在一个实施例中，当电源电压低于预定参考电压时，最小占空比增加。

6. 发明授权

US07961022B2 Pulsed width modulated control method and apparatus 有权
标题翻译：脉宽调制控制方法及装置
公开(公告)号：US07961022B2
公开(公告)日：2011-06-14
申请号：US12500923
申请日：2009-07-10
申请人： Zhihong Zhang , Xujiang Huang
发明人： Zhihong Zhang , Xujiang Huang
IPC分类号： H03K3/017
CPC分类号： H02P6/085 , F04D27/004 , H02P6/26 , H02P27/08
摘要： A pulse width modulated (PWM) controller has an input terminal for receiving a pulsed input signal having a first duty cycle, a power supply terminal for receiving a power supply voltage. a minimum duty cycle reference voltage signal, and a control circuit for providing a pulse-width-modulated (PWM) output signal having a second duty cycle related to the first duty cycle of the pulsed input signal. The PWM output control signal having a minimum duty cycle that is adjustable in response to a change in the power supply voltage. In an embodiment, the second duty cycle and the first duty cycle are correlated in a substantially linear relationship. In an embodiment, the PWM control circuit also has a triangle wave generation circuit for generating a triangle wave signal configured to oscillate between an upper limit voltage and a lower limit voltage, which are adjustable in response to a change in the power supply voltage.
摘要翻译：脉冲宽度调制（PWM）控制器具有用于接收具有第一占空比的脉冲输入信号的输入端子，用于接收电源电压的电源端子。最小占空比参考电压信号，以及用于提供具有与脉冲输入信号的第一占空比相关的第二占空比的脉冲宽度调制（PWM）输出信号的控制电路。 PWM输出控制信号具有响应于电源电压变化而可调节的最小占空比。在一个实施例中，第二占空比和第一占空比以基本线性关系相关。在一个实施例中，PWM控制电路还具有三角波产生电路，用于产生三角波信号，该三角波信号被配置为在上限电压和下限电压之间振荡，这可以响应于电源电压的变化而调节。

7. 发明授权

US09306060B1 Semiconductor devices and related fabrication methods 有权
标题翻译：半导体器件及相关制造方法
公开(公告)号：US09306060B1
公开(公告)日：2016-04-05
申请号：US14548616
申请日：2014-11-20
申请人： Hongning Yang , Daniel J. Blomberg , Xin Lin , Zhihong Zhang , Jiang-Kai Zuo
发明人： Hongning Yang , Daniel J. Blomberg , Xin Lin , Zhihong Zhang , Jiang-Kai Zuo
IPC分类号： H01L29/78 , H01L29/66 , H01L29/06 , H01L29/10 , H01L29/08
CPC分类号： H01L29/7823 , H01L21/26513 , H01L29/0623 , H01L29/0634 , H01L29/0646 , H01L29/0649 , H01L29/0653 , H01L29/0865 , H01L29/0878 , H01L29/0882 , H01L29/0886 , H01L29/1095 , H01L29/402 , H01L29/66689 , H01L29/7835 , H01L29/78624
摘要： Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a body region of semiconductor material having a first conductivity type, a source region of semiconductor material having a second conductivity type within the body region, a junction isolation region of semiconductor material having the second conductivity type, a drain region of semiconductor material having the second conductivity type, and first and second drift regions of semiconductor material having the second conductivity type. The first drift region resides laterally between the drain region and the junction isolation region, the junction isolation region resides laterally between the first drift region and the second drift region, and the second drift region resides laterally between the body region and the junction isolation region.
摘要翻译：提供半导体器件结构和相关的制造方法。示例性的半导体器件结构包括具有第一导电类型的半导体材料的主体区域，在体区内具有第二导电类型的半导体材料的源极区域，具有第二导电类型的半导体材料的结隔离区域，漏极区域具有第二导电类型的半导体材料以及具有第二导电类型的半导体材料的第一和第二漂移区。第一漂移区域横向地位于漏极区域和结隔离区域之间，结隔离区域横向位于第一漂移区域和第二漂移区域之间，并且第二漂移区域横向居住在体区域和结隔离区域之间。

8. 发明授权

US09070576B2 Semiconductor device and related fabrication methods 有权
标题翻译：半导体器件及相关制造方法
公开(公告)号：US09070576B2
公开(公告)日：2015-06-30
申请号：US13606797
申请日：2012-09-07
申请人： Hongning Yang , Zhihong Zhang , Jiang-Kai Zuo
发明人： Hongning Yang , Zhihong Zhang , Jiang-Kai Zuo
IPC分类号： H01L29/66 , H01L29/08 , H01L29/78 , H01L29/45 , H01L29/49 , H01L29/06 , H01L29/10
CPC分类号： H01L29/0878 , H01L29/0653 , H01L29/1087 , H01L29/1095 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/66689 , H01L29/7824
摘要： Semiconductor device structures and related fabrication methods are provided. An exemplary method of fabricating a semiconductor device on a doped region of semiconductor material having a first conductivity type involves forming a first region having a second conductivity type within the doped region, forming a body region having the first conductivity type overlying the first region, and forming a drift region having the second conductivity type within the doped region, wherein at least a portion of the drift region abuts at least a portion of the first region. In one embodiment, the dopant concentration of the first region is less than the dopant concentration of the body region and different from the dopant concentration of the drift region.
摘要翻译：提供半导体器件结构和相关的制造方法。在具有第一导电类型的半导体材料的掺杂区域上制造半导体器件的示例性方法包括在掺杂区域内形成具有第二导电类型的第一区域，形成覆盖第一区域的具有第一导电类型的体区，以及在所述掺杂区域内形成具有所述第二导电类型的漂移区，其中所述漂移区的至少一部分邻接所述第一区的至少一部分。在一个实施例中，第一区域的掺杂剂浓度小于体区的掺杂剂浓度，并且不同于漂移区的掺杂剂浓度。

9. 发明授权

US09041103B2 RESURF semiconductor device charge balancing 有权
标题翻译： RESURF半导体器件电荷平衡
公开(公告)号：US09041103B2
公开(公告)日：2015-05-26
申请号：US13781722
申请日：2013-02-28
申请人： Won Gi Min , Zhihong Zhang , Hongzhong Xu , Jiang-Kai Zuo
发明人： Won Gi Min , Zhihong Zhang , Hongzhong Xu , Jiang-Kai Zuo
IPC分类号： H01L29/772 , H01L29/78 , H01L29/06 , H01L29/08 , H01L29/10
CPC分类号： H01L29/7823 , H01L29/063 , H01L29/0634 , H01L29/0653 , H01L29/0692 , H01L29/0847 , H01L29/0882 , H01L29/1083 , H01L29/1087 , H01L29/1095 , H01L29/7816 , H01L29/7835 , H01L2924/0002 , H01L2924/00
摘要： Breakdown voltage BVdss is enhanced and ON-resistance reduced in RESURF devices, e.g., LDMOS transistors, by careful charge balancing, even when body and drift region charge balance is not ideal, by: (i) providing a plug or sinker near the drain and of the same conductivity type extending through the drift region at least into the underlying body region, and/or (ii) applying bias Viso to a surrounding lateral doped isolation wall coupled to the device buried layer, and/or (iii) providing a variable resistance bridge between the isolation wall and the drift region. The bridge may be a FET whose source-drain couple the isolation wall and drift region and whose gate receives control voltage Vc, or a resistor whose cross-section (X, Y, Z) affects its resistance and pinch-off, to set the percentage of drain voltage coupled to the buried layer via the isolation wall.
摘要翻译：即使在身体和漂移区域电荷平衡不理想的情况下，即使在（i）在漏极附近提供插头或沉降片，即使通过仔细的电荷平衡，RESURF器件（例如LDMOS晶体管）中的击穿电压BVdss也能够降低导通电阻，和/或（ii）将偏置Viso施加到耦合到器件掩埋层的周围横向掺杂隔离壁，和/或（iii）提供可变的隔离墙和漂移区之间的电阻桥。该桥可以是FET，其漏极耦合隔离壁和漂移区，并且其栅极接收控制电压Vc，或者其截面（X，Y，Z）影响其电阻和夹断的电阻器，以设置通过隔离壁耦合到掩埋层的漏极电压的百分比。

10. 发明申请

US20130299939A1 CHIP IDENTIFICATION PATTERN AND METHOD OF FORMING 有权
标题翻译：芯片识别模式及其形成方法
公开(公告)号：US20130299939A1
公开(公告)日：2013-11-14
申请号：US13469386
申请日：2012-05-11
申请人： Yoba Amoah , John J. Ellis-Monaghan , Roger C. Kuo , Molly J. Leitch , Zhihong Zhang
发明人： Yoba Amoah , John J. Ellis-Monaghan , Roger C. Kuo , Molly J. Leitch , Zhihong Zhang
IPC分类号： H01L27/06 , H01L21/26
CPC分类号： H01L23/544 , H01L27/08 , H01L2223/5444 , H01L2223/5446 , H01L2223/54473 , H01L2924/0002 , H01L2924/00
摘要： Various embodiments disclosed include methods of performing a double exposure process on a level of an integrated circuit (IC) chip to form an IC chip having an embedded electrically measurable identifier. In some cases, the method includes: exposing a level of an integrated circuit (IC) chip using a first mask orientation; subsequently exposing the level of the IC chip using a second mask orientation distinct from the first mask orientation; and developing the level of the IC chip to form an electrically measurable identifier on the IC chip.
摘要翻译：公开的各种实施例包括在集成电路（IC）芯片的电平上执行双重曝光处理以形成具有嵌入的可电测量标识符的IC芯片的方法。在一些情况下，该方法包括：使用第一掩模取向曝光集成电路（IC）芯片的电平; 随后使用与第一掩模取向不同的第二掩模取向暴露IC芯片的电平; 并且开发IC芯片的电平以在IC芯片上形成可电测量的标识符。

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