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1. 发明授权

US5527730A Method of forming a capacitor having contact hole treated with hydrogen atoms and energy beam 失效
标题翻译：形成具有用氢原子和能量束处理的接触孔的电容器的方法
公开(公告)号：US5527730A
公开(公告)日：1996-06-18
申请号：US425081
申请日：1995-04-19
申请人： Yuzo Kayaoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
发明人： Yuzo Kayaoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
IPC分类号： H01L21/02 , H01L21/285 , H01L21/8246 , H01L27/112 , H01L21/70 , H01L27/00
CPC分类号： H01L28/40 , H01L21/28537 , H01L27/112 , H01L27/11226 , Y10S148/14 , Y10S438/974
摘要： An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.
摘要翻译：在半导体基体的表面上形成绝缘膜，除去绝缘膜的一部分，使表面出现在外部。暴露的表面用氢终止，然后施加能量束以选择性地除去终止的氢。金属被选择性地沉积在以左氢原子终止的部分上。

2. 发明授权

US5569614A Method of forming metal pattern including a schottky diode 失效
标题翻译：形成包括肖特基二极管的金属图案的方法
公开(公告)号：US5569614A
公开(公告)日：1996-10-29
申请号：US435834
申请日：1995-05-05
申请人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
发明人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
IPC分类号： H01L21/02 , H01L21/285 , H01L21/8246 , H01L27/112 , H01L21/265
CPC分类号： H01L28/40 , H01L21/28537 , H01L27/112 , H01L27/11226 , Y10S148/14 , Y10S438/974
摘要： An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.
摘要翻译：在半导体基体的表面上形成绝缘膜，除去绝缘膜的一部分，使表面出现在外部。暴露的表面用氢终止，然后施加能量束以选择性地除去终止的氢。金属被选择性地沉积在以左氢原子终止的部分上。

3. 发明授权

US5963812A Manufacturing method of a semiconductor apparatus having an electron donative surface in a side wall portion 失效
标题翻译：在侧壁部分具有给电子表面的半导体装置的制造方法
公开(公告)号：US5963812A
公开(公告)日：1999-10-05
申请号：US814016
申请日：1997-03-10
申请人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
发明人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
IPC分类号： H01L21/02 , H01L21/285 , H01L21/8246 , H01L27/112 , H01L21/336
CPC分类号： H01L28/40 , H01L21/28537 , H01L27/112 , H01L27/11226 , Y10S148/14 , Y10S438/974
摘要： An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.
摘要翻译：在半导体基体的表面上形成绝缘膜，除去绝缘膜的一部分，使表面出现在外部。暴露的表面用氢终止，然后施加能量束以选择性地除去终止的氢。金属被选择性地沉积在以左氢原子终止的部分上。

4. 发明授权

US5580808A Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam 失效
标题翻译：制造具有用氢原子和能量束处理的接触孔的ROM器件的方法
公开(公告)号：US5580808A
公开(公告)日：1996-12-03
申请号：US327799
申请日：1994-10-24
申请人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
发明人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
IPC分类号： H01L21/02 , H01L21/285 , H01L21/8246 , H01L27/112 , H01L21/265
CPC分类号： H01L28/40 , H01L21/28537 , H01L27/112 , H01L27/11226 , Y10S148/14 , Y10S438/974
摘要： A method for manufacturing a mask ROM by first forming a contact hole with a semiconductor within. A surface treatment is then applied to supply by hydrogen atoms to the surface of the semiconductor. The contact hole is selectively irradiated with energy beams so as to produce an irradiated contact hole and a non-irradiated contact hole. In the non-irradiated contact hole a conductive or semiconductor thin film is formed and a circuit formed on the conductive or semiconductor thin film. The circuit and the non-irradiated hole are connected to each other and the irradiated hole and the circuit are insulated from each other.
摘要翻译：一种通过首先在半导体内形成接触孔来制造掩模ROM的方法。然后施加表面处理以将氢原子供给到半导体的表面。用能量束选择性地照射接触孔，以产生照射的接触孔和未照射的接触孔。在未经照射的接触孔中，形成导电或半导体薄膜，并在导电或半导体薄膜上形成电路。电路和未照射的孔彼此连接，并且照射的孔和电路彼此绝缘。

5. 发明授权

US6156657A Method of treating active material 失效
标题翻译：活性物质处理方法
公开(公告)号：US6156657A
公开(公告)日：2000-12-05
申请号：US637410
申请日：1996-04-25
申请人： Hideshi Kuwabara , Yasushi Kawasumi , Tetsuo Asaba , Kenji Makino , Yuzo Kataoka , Yasuhiro Sekine , Shigeru Nishimura
发明人： Hideshi Kuwabara , Yasushi Kawasumi , Tetsuo Asaba , Kenji Makino , Yuzo Kataoka , Yasuhiro Sekine , Shigeru Nishimura
IPC分类号： B01D53/72 , C23C16/44 , H01J37/32 , H01L21/44
CPC分类号： H01J37/3244 , B01D53/72 , C23C16/4412 , H01J37/32844 , Y02C20/30
摘要： An active substance treating method is characterized in that an active substance is caused to react with an inactivating substance in an exhaust system for a thin film forming apparatus. A thin film forming apparatus includes a common chamber having a region where plasma CVD is carried out and a region where thermal CVD is carried out, a device provided in the chamber for pressing a substrate onto a holder, a lamp for illuminating light having a component of a wavelength of 1 .mu.m or above to heat the substrate, an introducing port for separately introducing two active substances to a vicinity of the substrate, a vaporizing device in which at least two bubblers are series-connected to vaporize the active substances, and an exhaust system which is divided into two systems each of which has a heater and which has a port for introducing an inactivating substance into an exhaust pump.
摘要翻译：活性物质处理方法的特征在于使活性物质与用于薄膜形成装置的排气系统中的灭活物质反应。薄膜形成装置包括具有进行等离子体CVD的区域和进行热CVD的区域的公共室，设置在用于将基板按压到保持器上的室中的装置，用于照射具有成分波长1μm以上的加热用基板，将两个活性物质分别引入到基板附近的引入口，将至少两个起泡器串联连接以蒸发活性物质的汽化装置，以及排气系统，其被分成两个系统，每个系统具有加热器，并且具有用于将灭活物质引入排气泵的端口。

6. 发明授权

US5534069A Method of treating active material 失效
公开(公告)号：US5534069A
公开(公告)日：1996-07-09
申请号：US92782
申请日：1993-07-19
申请人： Hideshi Kuwabara , Yasushi Kawasumi , Tetsuo Asaba , Kenji Makino , Yuzo Kataoka , Yasuhiro Sekine , Shigeru Nishimura
发明人： Hideshi Kuwabara , Yasushi Kawasumi , Tetsuo Asaba , Kenji Makino , Yuzo Kataoka , Yasuhiro Sekine , Shigeru Nishimura
IPC分类号： B01D53/72 , C23C16/44 , H01J37/32 , C23C16/18 , C23C16/46 , C23C16/48
CPC分类号： H01J37/3244 , B01D53/72 , C23C16/4412 , H01J37/32844 , Y02C20/30
摘要： An active substance treating method is characterized in that an active substance is caused to react with an inactivating substance in an exhaust system for a thin film forming apparatus. A thin film forming apparatus includes a common chamber having a region where plasma CVD is carried out and a region where thermal CVD is carried out, a device provided in the chamber for pressing a substrate onto a holder, a lamp for illuminating light having a component of a wavelength of 1 .mu.m or above to heat the substrate, an introducing port for separately introducing two active substances to a vicinity of the substrate, a vaporizing device in which at least two bubblers are series-connected to vaporize the active substances, and an exhaust system which is divided into two systems each of which has a heater and which has a port for introducing an inactivating substance into an exhaust pump.

7. 发明授权

US5383970A Chemical vapor deposition method for forming a deposited film with the use of a liquid raw material and apparatus suitable for practicing said method 失效
标题翻译：使用液体原料形成沉积膜的化学气相沉积方法和适于实施所述方法的装置
公开(公告)号：US5383970A
公开(公告)日：1995-01-24
申请号：US997543
申请日：1992-12-28
申请人： Tetsuo Asaba , Kenji Makino
发明人： Tetsuo Asaba , Kenji Makino
IPC分类号： C23C16/18 , C23C16/40 , C23C16/448 , C23C16/00
CPC分类号： C23C16/402 , C23C16/18 , C23C16/4486
摘要： A chemical vapor deposition method for forming a deposited film on a substrate using a film-forming liquid raw material in which said film-forming liquid raw material is pulverizing into liquid fine particles and said liquid fine particles are heated together with a gas to produce a film-forming raw material gas; said film-forming raw material gas is introduced into a reaction chamber; and said film-forming raw material gas is chemically reacted with a surface of a substrate disposed in said reaction chamber.A chemical vapor deposition apparatus suitable for practicing said chemical vapor deposition method, characterized by a liquid pulverizing mechanism capable of pulverizing a film-forming liquid raw material into liquid fine particles while precisely adjusting the amount of the film-forming liquid raw material to be supplied thereinto and a liquid gasifying mechanism capable of efficiently gasifying the liquid fine particles to produce a film-forming raw material gas into a reaction chamber in which a deposited film is to be formed on a substrate.
摘要翻译：一种用于使用成膜液体原料在基板上形成沉积膜的化学气相沉积方法，其中所述成膜液体原料被粉碎成液体细颗粒，所述液体微粒与气体一起加热以产生成膜原料气; 所述成膜原料气体被引入到反应室中; 并且所述成膜原料气体与设置在所述反应室中的基板的表面发生化学反应。一种适于实施所述化学气相沉积方法的化学气相沉积设备，其特征在于，一种液体粉碎机构，其能够将成膜液体原料粉碎成液体微粒，同时精确调节供应的成膜液体原料的量以及液体气化机构，其能够有效地气化液体微粒以在成膜基板上形成沉积膜的反应室中产生成膜原料气体。

8. 发明授权

US5547708A Chemical vapor deposition method for forming a deposited film with the use of liquid raw material 失效
标题翻译：使用液体原料形成沉积膜的化学气相沉积方法
公开(公告)号：US5547708A
公开(公告)日：1996-08-20
申请号：US339887
申请日：1994-11-14
申请人： Tetsuo Asaba , Kenji Makino
发明人： Tetsuo Asaba , Kenji Makino
IPC分类号： C23C16/18 , C23C16/40 , C23C16/448 , C23C16/00
CPC分类号： C23C16/402 , C23C16/18 , C23C16/4486
摘要： A chemical vapor deposition method for forming a deposited film on a substrate using a film-forming liquid raw material. The film-forming liquid is pulverized into liquid fine particles which are heated together with a gas to produce a film-forming raw material gas. The film-forming raw material gas is introduced into a reaction chamber where it chemically reacts with a surface of a substrate which is present in the reaction chamber.
摘要翻译：一种用于使用成膜液体原料在基板上形成沉积膜的化学气相沉积方法。将成膜液粉碎成与气体一起加热以形成成膜原料气体的液体微粒。将成膜原料气体引入到与反应室中存在的基板的表面发生化学反应的反应室中。

9. 发明授权

US6070968A Ink jet cartridge and apparatus having a substrate with grooves which contain heat generating elements 失效
标题翻译：具有具有包含发热元件的凹槽的基板的喷墨墨盒和设备
公开(公告)号：US6070968A
公开(公告)日：2000-06-06
申请号：US361048
申请日：1994-12-21
申请人： Yutaka Akino , Kenji Makino , Akira Okita , Seiichi Tamura
发明人： Yutaka Akino , Kenji Makino , Akira Okita , Seiichi Tamura
IPC分类号： B41J2/05 , B41J2/14 , B41J2/16 , H01L21/822 , H01L27/04
CPC分类号： B41J2/14072 , B41J2/14129 , B41J2002/14379 , B41J2202/13
摘要： An object of the present invention is to provide an ink jet recording head and an apparatus using the same, wherein electrothermal conversion element for thermally emitting a recording ink is provided at a side of a substrate on which the head structure is formed, thereby reducing a loss in the thermal energy.
摘要翻译：本发明的目的是提供一种喷墨记录头及其使用方法，其中用于热释放记录油墨的电热转换元件设置在其上形成有头结构的基板的一侧，从而减少了热能损失。

10. 发明授权

US6143190A Method of producing a through-hole, silicon substrate having a through-hole, device using such a substrate, method of producing an ink-jet print head, and ink-jet print head 失效
标题翻译：通孔的制造方法，具有通孔的硅基板，使用该基板的装置，喷墨打印头的制造方法以及喷墨打印头
公开(公告)号：US6143190A
公开(公告)日：2000-11-07
申请号：US967732
申请日：1997-11-12
申请人： Takayuki Yagi , Junichi Kobayashi , Yasushi Kawasumi , Genzo Momma , Kenji Makino , Kei Fujita , Yasushi Matsuno , Yukihiro Hayakawa , Masahiro Takizawa
发明人： Takayuki Yagi , Junichi Kobayashi , Yasushi Kawasumi , Genzo Momma , Kenji Makino , Kei Fujita , Yasushi Matsuno , Yukihiro Hayakawa , Masahiro Takizawa
IPC分类号： B41J2/05 , B41J2/16 , B81B3/00 , B81C1/00 , G01B21/30 , G01N37/00 , G01Q60/38 , G01Q70/16 , H01L21/28 , H01L21/302 , H01L21/306 , H01L21/3065 , B44C1/22
CPC分类号： B81C1/00087 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1639 , B41J2/1642 , B41J2/1646 , B41J2202/13 , B81B2201/052
摘要： The invention provides a method of producing a through-hole, a substrate used to produce a through-hole, a substrate having a through-hole, and a device using such a through-hole or a substrate having such a through-hole, which are characterized in that: a through-hole can be produced only by etching a silicon substrate from its back side; the opening length d can be precisely controlled to a desired value regardless of the variations in the silicon wafer thickness, and the orientation flat angle, and also regardless of the type of a silicon crystal orientation-dependent anisotropic etchant employed; high productivity, high production reproducibility, and ease of production can be achieved; a high-liberality can be achieved in the shape of the opening end even if temperature treatment is performed at a high temperature for a long time; and a high-precision through-hole can be produced regardless of the shape of a device formed on the surface of a substrate.
摘要翻译：本发明提供一种制造通孔的方法，用于制造通孔的基板，具有通孔的基板以及使用这种通孔的装置或具有这种通孔的基板，其中其特征在于：只能通过从其背面蚀刻硅衬底来制造通孔; 无论硅晶片厚度和取向平面角度的变化如何，也可以将开口长度d精确地控制到期望值，并且不管所采用的取决于硅晶体取向的各向异性蚀刻剂的类型如何; 可以实现高生产率，高生产重现性和易生产性; 即使长时间在高温下进行温度处理，也可以在开口形状中实现高自由度; 并且可以产生高精度通孔，而不管形成在基板表面上的器件的形状如何。

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