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1. 发明授权

US5963812A Manufacturing method of a semiconductor apparatus having an electron donative surface in a side wall portion 失效
标题翻译：在侧壁部分具有给电子表面的半导体装置的制造方法
公开(公告)号：US5963812A
公开(公告)日：1999-10-05
申请号：US814016
申请日：1997-03-10
申请人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
发明人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
IPC分类号： H01L21/02 , H01L21/285 , H01L21/8246 , H01L27/112 , H01L21/336
CPC分类号： H01L28/40 , H01L21/28537 , H01L27/112 , H01L27/11226 , Y10S148/14 , Y10S438/974
摘要： An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.
摘要翻译：在半导体基体的表面上形成绝缘膜，除去绝缘膜的一部分，使表面出现在外部。暴露的表面用氢终止，然后施加能量束以选择性地除去终止的氢。金属被选择性地沉积在以左氢原子终止的部分上。

2. 发明授权

US5653810A Apparatus for forming metal film and process for forming metal film 失效
标题翻译：用于形成金属膜的装置
公开(公告)号：US5653810A
公开(公告)日：1997-08-05
申请号：US407050
申请日：1995-03-17
申请人： Yuzo Kataoka , Yukihiro Hayakawa
发明人： Yuzo Kataoka , Yukihiro Hayakawa
IPC分类号： C23C16/50 , C23C16/04 , C23C16/509 , H01J37/32 , H01L21/28 , H01L21/285 , H01L21/3205 , C23C16/00
CPC分类号： H01J37/32082 , C23C16/04 , C23C16/509 , H01J37/32568 , H01L21/28562 , H01L21/28575 , H01L21/32051 , H01J2237/332
摘要： An apparatus for forming metal film for forming metal films on substrates comprises a reaction chamber, a plurality of first and second electrodes alternately arranged in the reaction chamber, an energy supply means that supplies to the first and second electrodes an electrical energy for generating plasma, a heating means for heating a plurality of substrates disposed between the first and second electrodes, and a gas feed means that feeds into the reaction chamber a starting material gas for forming metal films; the plasma is generated across the first and second electrodes to form metal films on the plurality of substrates.The apparatus can form metal films at a high throughput at one time process, and at a low cost.
摘要翻译：用于在基板上形成金属膜的金属膜形成装置包括：反应室，交替布置在反应室中的多个第一和第二电极，向第一和第二电极提供用于产生等离子体的电能的能量供给装置，加热装置，用于加热设置在第一和第二电极之间的多个基板;以及气体供给装置，其将用于形成金属膜的原料气体进料到反应室中; 跨越第一和第二电极产生等离子体，以在多个基板上形成金属膜。该设备可以在一次工艺时以高产量形成金属膜，并以低成本形成。

3. 发明授权

US5580822A Chemical vapor deposition method 失效
标题翻译：化学气相沉积法
公开(公告)号：US5580822A
公开(公告)日：1996-12-03
申请号：US449748
申请日：1995-05-25
申请人： Yukihiro Hayakawa , Yasushi Kawasumi , Kenji Makino , Yuzo Kataoka
发明人： Yukihiro Hayakawa , Yasushi Kawasumi , Kenji Makino , Yuzo Kataoka
IPC分类号： C23C16/20 , C23C16/44 , C23C16/448 , C23C16/452 , C23C16/455 , H01L21/44
CPC分类号： C23C16/4557 , C23C16/20 , C23C16/4481 , C23C16/4485 , C23C16/452 , Y10S438/935
摘要： A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reducing the pressure inside the container, and heating means for heating the liquid starting material held in the container; the liquid starting material being boiled.
摘要翻译：一种起始气体供给装置，用于从液体原料形成气态起始材料并将气态原料进料到CVD设备的反应室中; 容纳液体原料的容器，用于降低容器内的压力的减压装置，以及加热保持在容器内的液体起始材料的加热装置; 液体起始材料被煮沸。

4. 发明授权

US5580808A Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam 失效
标题翻译：制造具有用氢原子和能量束处理的接触孔的ROM器件的方法
公开(公告)号：US5580808A
公开(公告)日：1996-12-03
申请号：US327799
申请日：1994-10-24
申请人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
发明人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
IPC分类号： H01L21/02 , H01L21/285 , H01L21/8246 , H01L27/112 , H01L21/265
CPC分类号： H01L28/40 , H01L21/28537 , H01L27/112 , H01L27/11226 , Y10S148/14 , Y10S438/974
摘要： A method for manufacturing a mask ROM by first forming a contact hole with a semiconductor within. A surface treatment is then applied to supply by hydrogen atoms to the surface of the semiconductor. The contact hole is selectively irradiated with energy beams so as to produce an irradiated contact hole and a non-irradiated contact hole. In the non-irradiated contact hole a conductive or semiconductor thin film is formed and a circuit formed on the conductive or semiconductor thin film. The circuit and the non-irradiated hole are connected to each other and the irradiated hole and the circuit are insulated from each other.
摘要翻译：一种通过首先在半导体内形成接触孔来制造掩模ROM的方法。然后施加表面处理以将氢原子供给到半导体的表面。用能量束选择性地照射接触孔，以产生照射的接触孔和未照射的接触孔。在未经照射的接触孔中，形成导电或半导体薄膜，并在导电或半导体薄膜上形成电路。电路和未照射的孔彼此连接，并且照射的孔和电路彼此绝缘。

5. 发明授权

US5200639A Semiconductor device with isolating groove containing single crystalline aluminum wiring 失效
标题翻译：具有单晶铝合金接线的隔离栅的半导体器件
公开(公告)号：US5200639A
公开(公告)日：1993-04-06
申请号：US707022
申请日：1991-05-29
申请人： Keiji Ishizuka , Yuzo Kataoka , Toshihiko Ichise , Hidekazu Takahashi , Hayao Ohzu
发明人： Keiji Ishizuka , Yuzo Kataoka , Toshihiko Ichise , Hidekazu Takahashi , Hayao Ohzu
IPC分类号： H01L21/74 , H01L21/761
CPC分类号： H01L21/761 , H01L21/743 , H01L2924/0002
摘要： A semiconductor device has a device region, and a device separation region formed on a semiconductor substrate doped with impurities. And, the device separation region has a metal wiring formed on the surface of the device region or the back surface of the substrate. An aluminum region extending in the longitudinal direction connected to the metal wiring is formed within the device separation region.

6. 发明授权

US5731240A Manufacturing method for semiconductor depositing device 失效
标题翻译：半导体存储装置的制造方法
公开(公告)号：US5731240A
公开(公告)日：1998-03-24
申请号：US416487
申请日：1995-04-04
申请人： Yuzo Kataoka
发明人： Yuzo Kataoka
IPC分类号： H01L29/73 , H01L21/331 , H01L21/60 , H01L29/732
CPC分类号： H01L21/76897 , H01L29/66272
摘要： A method of manufacturing a semiconductor device includes the steps of: depositing a semiconductor film onto a semiconductor substrate, the semiconductor film having a main component which is the same material as the semiconductor substrate; and forming a first insulating layer on the semiconductor substrate. This method also includes the steps of: removing predetermined areas from the first insulating layer and the semiconductor film so as to form an opening; forming a second insulating layer inside the opening and on the first insulating layer; and removing the second insulating layer by anisotropic etching so that the side wall of the opening remains.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在半导体衬底上沉积半导体膜，该半导体膜具有与半导体衬底相同的主要成分; 以及在所述半导体衬底上形成第一绝缘层。该方法还包括以下步骤：从第一绝缘层和半导体膜去除预定区域以形成开口; 在所述开口内部和所述第一绝缘层上形成第二绝缘层; 并通过各向异性蚀刻去除第二绝缘层，使得开口的侧壁残留。

7. 发明授权

US5569614A Method of forming metal pattern including a schottky diode 失效
标题翻译：形成包括肖特基二极管的金属图案的方法
公开(公告)号：US5569614A
公开(公告)日：1996-10-29
申请号：US435834
申请日：1995-05-05
申请人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
发明人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
IPC分类号： H01L21/02 , H01L21/285 , H01L21/8246 , H01L27/112 , H01L21/265
CPC分类号： H01L28/40 , H01L21/28537 , H01L27/112 , H01L27/11226 , Y10S148/14 , Y10S438/974
摘要： An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.
摘要翻译：在半导体基体的表面上形成绝缘膜，除去绝缘膜的一部分，使表面出现在外部。暴露的表面用氢终止，然后施加能量束以选择性地除去终止的氢。金属被选择性地沉积在以左氢原子终止的部分上。

8. 发明授权

US5913111A Method of manufacturing an insulaed gate transistor 失效
标题翻译：制造绝缘栅晶体管的方法
公开(公告)号：US5913111A
公开(公告)日：1999-06-15
申请号：US587661
申请日：1996-01-17
申请人： Yuzo Kataoka , Shunsuke Inoue
发明人： Yuzo Kataoka , Shunsuke Inoue
IPC分类号： H01L21/30 , H01L21/336 , H01L29/78 , H01L29/786 , H01L21/00 , H01L21/22 , H01L21/38 , H01L21/84
CPC分类号： H01L29/6675 , H01L21/3003 , H01L29/41783 , H01L29/66575 , H01L29/66659 , H01L29/66757 , H01L29/7833 , H01L29/7835 , H01L29/78618 , H01L29/78621 , H01L29/78645
摘要： This invention provides a transistor manufacture method comprising the steps of forming, on a semiconductor substrate, an insulating film being made open at least in an introducing portion through which an impurity for forming a drain region other than a lightly-doped region is introduced, then forming a gate electrode and a drain electrode each containing an impurity, and then introducing the impurity through between the gate electrode and the drain electrode to thereby form the lightly-doped region; and introducing the impurity from the drain electrode through the impurity introducing portion with heat treatment, to thereby form the drain region. A transistor manufactured by the above method is also provided.
摘要翻译：本发明提供了一种晶体管制造方法，包括以下步骤：至少在引入用于形成除了轻掺杂区域以外的漏极区域的杂质的引入部分中，在半导体衬底上形成绝缘膜，然后形成各自含有杂质的栅电极和漏极，然后通过栅电极和漏电极之间引入杂质，形成轻掺杂区; 并通过热处理从漏电极引入杂质通过杂质导入部分，从而形成漏区。还提供了通过上述方法制造的晶体管。

9. 发明授权

US5364802A Method of making a semiconductor device with buried electrode 失效
标题翻译：制造具有埋电极的半导体器件的方法
公开(公告)号：US5364802A
公开(公告)日：1994-11-15
申请号：US130461
申请日：1993-10-01
申请人： Yuzo Kataoka , Toshihiko Ichise , Keiji Ishizuka , Tetsuo Asaba
发明人： Yuzo Kataoka , Toshihiko Ichise , Keiji Ishizuka , Tetsuo Asaba
IPC分类号： H01L21/331 , H01L21/335 , H01L21/74 , H01L21/761 , H01L29/08 , H01L29/417
CPC分类号： H01L29/66416 , H01L21/743 , H01L21/761 , H01L29/0821 , H01L29/41708 , H01L29/66272
摘要： A semiconductor device including a bipolar transistor, has a collector region including a first semiconductor region of the first conductivity type and a second semiconductor region of the first conductivity type having higher resistance than the first semiconductor region, a base region including a semiconductor region of the second conductivity type, and an emitter region including a semiconductor region of the first conductivity type. The semiconductor device further comprises a metal layer region for connecting the first semiconductor region and the collector electrode on the collector region provided within the second semiconductor region layer of the collector region.
摘要翻译：包括双极晶体管的半导体器件具有包括第一导电类型的第一半导体区域和具有比第一半导体区域更高的电阻的第一导电类型的第二半导体区域的集电极区域，包括半导体区域的半导体区域的基极区域第二导电类型和包括第一导电类型的半导体区域的发射极区域。半导体器件还包括金属层区域，用于在设置在集电区域的第二半导体区域层内的集电极区域上连接第一半导体区域和集电极电极。

10. 发明授权

US07749790B2 Photoelectric conversion device and image pickup system with photoelectric conversion device 有权
标题翻译：光电转换装置及具有光电转换装置的摄像系统
公开(公告)号：US07749790B2
公开(公告)日：2010-07-06
申请号：US12259347
申请日：2008-10-28
申请人： Ken-ichiro Ura , Yoshihiko Fukumoto , Yuzo Kataoka
发明人： Ken-ichiro Ura , Yoshihiko Fukumoto , Yuzo Kataoka
IPC分类号： H01L21/00
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14612 , H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： A photoelectric conversion device comprises a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type serving as a photoelectric conversion element together with a part of the first semiconductor region; a gate electrode transferring electric carriers generated in the photoelectric conversion element to a third semiconductor region of the second conductivity type. Moreover, the photoelectric conversion device comprises an isolation region for electrically isolating the second semiconductor region from a fourth semiconductor region of the second conductivity type adjacent to the second semiconductor region. Wiring for applying voltage to the gate electrode is arranged on the isolation region. Here, a fifth semiconductor region of the second conductivity type having an impurity concentration lower than that of the fourth semiconductor region is provided between the fourth semiconductor region and the isolation region.
摘要翻译：光电转换装置包括第一导电类型的第一半导体区域; 与第一半导体区域的一部分一起用作光电转换元件的第二导电类型的第二半导体区域; 将在所述光电转换元件中产生的载流子转移到所述第二导电类型的第三半导体区域的栅电极。此外，光电转换装置包括用于将第二半导体区域与邻近第二半导体区域的第二导电类型的第四半导体区域电隔离的隔离区域。用于向栅电极施加电压的布线设置在隔离区上。这里，在第四半导体区域和隔离区域之间设置具有比第四半导体区域低的杂质浓度的第二导电类型的第五半导体区域。

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