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    • 4. 发明申请
    • FIXED CONSTANT VELOCITY UNIVERSAL JOINT
    • 固定不变速度通用接头
    • US20110212789A1
    • 2011-09-01
    • US13127561
    • 2009-11-27
    • Hirokazu OobaMasayuki KurodaHisaaki KuraTatsuro SugiyamaTeruaki Fujio
    • Hirokazu OobaMasayuki KurodaHisaaki KuraTatsuro SugiyamaTeruaki Fujio
    • F16D3/223
    • F16D3/2233F16D3/2237F16D2003/22306
    • Wedge angles are formed between mutually facing central track-groove portions (11b, 12b, 21b, 22b) of an outer joint member (1) and an inner joint member (2). Track grooves (11, 12) provided to the outer joint member (1) and track grooves (21, 22) provided to the inner joint member (2) include a first pair of track grooves (11, 21) respectively including the central track-groove portions (11b, 21b) forming therebetween the wedge angle (α) opening to an opening side of the outer joint member (1) under a state in which an operating angle is 0°, and a second pair of track grooves (12, 22) respectively including the central track-groove portions (12b, 22b) oppositely forming therebetween the wedge angle (β) opening to an inner-end side of the outer joint member (1) under the state in which the operating angle is 0° . Both the first track groove (11) and the second track groove (12) of the outer joint member (1) include opening-side track-groove portions (11c, 12c) connected respectively to the central track-groove portions (11b, 12b) directly, each of the opening-side track-groove portions (11c, 12c) being formed in such a shape as to be free from an undercut toward the opening side. Accordingly, it is possible to manufacture at low cost a high-efficient fixed type constant velocity universal joint which involves less torque loss.
    • 楔形角形成在外侧接头构件(1)和内侧接头构件(2)的相互面对的中心轨道槽部(11b,12b,21b,22b)之间。 设置在外侧接头部件(1)上的履带槽(11,12)和设置于内侧接头部件(2)的履带槽(21,22)包括:第一对履带槽(11,21),分别包括中心轨道 - 沟槽部分(11b,21b)之间形成在操作角度为0°的状态下向外侧接头构件(1)的开口侧开口的楔角(α)和第二对轨道槽(12 ,22),分别包括在所述外侧接头构件(1)的内侧侧与所述外侧接头构件(1)的内侧侧面相反地形成的中心轨道槽部(12b,22b),所述楔形角(& bgr) 0°。 外侧接头构件(1)的第一轨道槽(11)和第二轨道槽(12)都分别与中心轨道槽部(11b,12b)连接的开口侧轨道槽部(11c,12c) ),每个开口侧轨道槽部分(11c,12c)形成为朝向开口侧没有底切的形状。 因此,可以低成本地制造涉及较小转矩损失的高效率固定式等速万向接头。
    • 6. 发明申请
    • ROTARY ATOMIZER
    • 旋转原型机
    • US20100140375A1
    • 2010-06-10
    • US12598589
    • 2007-05-02
    • Masayuki KurodaKenji Nagato
    • Masayuki KurodaKenji Nagato
    • F23D11/04
    • B05B3/1057B05B1/3046B05B3/1014B05B3/1064B05B5/04B05B5/0407B05B5/0426B05B7/061B05B15/50B05D1/02
    • In a rotary atomizer (10) including a rotating bell (92) secured to a rotating shaft (20a) of an air motor (20) held in an atomizer body, the rotating bell having a plurality of orifices (92a) for supplying paint to an object to be painted, the rotating bell being rotated to spray the paint toward the object to be painted, the rotary atomizer comprises a paint passage (102a) with a paint port (112c) at an end thereof fluidly communicating with the orifices of the rotating bell, and a water passage (108) arranged outside of the paint passage and having a water port at an end of the water passage leading to the orifices of the rotating bell. A needle (94) for opening and closing the paint port may be provided.
    • 在旋转雾化器(10)中,旋转雾化器(10)包括固定在保持在雾化器主体中的气动马达(20)的旋转轴(20a)上的旋转钟(92),所述旋转钟具有多个用于将油漆供应的孔口(92a) 旋转雾化器包括一个油漆通道(102a),油漆通道(102a)在一端与油墨的孔口流体连通, 旋转的钟和位于油漆通道外部的水通道(108),并且在通向旋转钟的孔的水通道的端部具有水口。 可以设置用于打开和关闭油漆口的针(94)。
    • 7. 发明授权
    • Nitride semiconductor device and manufacturing method thereof
    • 氮化物半导体器件及其制造方法
    • US07936049B2
    • 2011-05-03
    • US12823325
    • 2010-06-25
    • Masayuki KurodaTetsuzo Ueda
    • Masayuki KurodaTetsuzo Ueda
    • H01L21/338H01L29/812H01L29/778
    • H01L29/7787H01L29/045H01L29/2003H01L29/41766H01L29/66462
    • It is an object of the present invention to provide a nitride semiconductor device with low parasitic resistance by lowering barrier height to reduce contact resistance at an interface of semiconductor and metal. The nitride semiconductor device includes a GaN layer, a device isolation layer, an ohmic electrode, an n-type Al0.25Ga0.75N layer, a sapphire substrate, and a buffer layer. A main surface of the n-type Al0.25Ga0.75N layer is on (0 0 0 1) plane as a main surface, and concaves are arranged in a checkerboard pattern on the surface. The ohmic electrode contacts the sides of the concaves of the n-type Al0.25Ga0.75N layer, and the sides of the concaves are on non-polar surfaces such as (1 1 −2 0) plane or (1 −1 0 0) plane.
    • 本发明的目的是通过降低势垒高度来提供具有低寄生电阻的氮化物半导体器件,以降低半导体和金属界面处的接触电阻。 氮化物半导体器件包括GaN层,器件隔离层,欧姆电极,n型Al0.25Ga0.75N层,蓝宝石衬底和缓冲层。 n型Al0.25Ga0.75N层的主表面在(0 0 0 1)平面上作为主表面,并且凹面以表格形式布置在棋盘图案中。 欧姆电极接触n型Al0.25Ga0.75N层的凹面的侧面,凹面的两侧在非极性表面上,例如(11-2 -2)面或(1-1000) )飞机。
    • 8. 发明授权
    • Nitride semiconductor device and manufacturing method thereof
    • 氮化物半导体器件及其制造方法
    • US07777305B2
    • 2010-08-17
    • US12041825
    • 2008-03-04
    • Masayuki KurodaTetsuzo Ueda
    • Masayuki KurodaTetsuzo Ueda
    • H01L21/388H01L29/812H01L29/778
    • H01L29/7787H01L29/045H01L29/2003H01L29/41766H01L29/66462
    • It is an object of the present invention to provide a nitride semiconductor device with low parasitic resistance by lowering barrier height to reduce contact resistance at an interface of semiconductor and metal. The nitride semiconductor device includes a GaN layer, a device isolation layer, an ohmic electrode, an n-type Al0.25Ga0.75N layer, a sapphire substrate, and a buffer layer. A main surface of the n-type Al0.25Ga0.75N layer is on (0 0 0 1) plane as a main surface, and concaves are arranged in a checkerboard pattern on the surface. The ohmic electrode contacts the sides of the concaves of the n-type Al0.25Ga0.75N layer, and the sides of the concaves are on non-polar surfaces such as (1 1 −2 0) plane or (1 −1 0 0) plane.
    • 本发明的目的是通过降低势垒高度来提供具有低寄生电阻的氮化物半导体器件,以降低半导体和金属界面处的接触电阻。 氮化物半导体器件包括GaN层,器件隔离层,欧姆电极,n型Al0.25Ga0.75N层,蓝宝石衬底和缓冲层。 n型Al0.25Ga0.75N层的主表面在(0 0 0 1)平面上作为主表面,并且凹面以表格形式布置在棋盘图案中。 欧姆电极接触n型Al0.25Ga0.75N层的凹面的侧面,凹面的两侧在非极性表面上,例如(11-2 -2)面或(1-1000) )飞机。