专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07956383B2 Field effect transistor 有权
标题翻译：场效应晶体管
公开(公告)号：US07956383B2
公开(公告)日：2011-06-07
申请号：US12060505
申请日：2008-04-01
申请人： Masayuki Kuroda , Tetsuzo Ueda
发明人： Masayuki Kuroda , Tetsuzo Ueda
IPC分类号： H01L31/072
CPC分类号： H01L29/7787 , H01L29/045 , H01L29/2003 , H01L29/4236 , H01L29/42376 , H01L29/452 , H01L29/518 , H01L29/66462
摘要： A field effect transistor includes: a first nitride semiconductor layer having a plane perpendicular to a (0001) plane or a plane tilted with respect to the (0001) plane as a main surface; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider bandgap than the first nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer; and a source electrode and a drain electrode formed so as to contact at least a part of the second nitride semiconductor layer or the third nitride semiconductor layer. A recess that exposes a part of the second nitride semiconductor layer is formed between the source electrode and the drain electrode in the third nitride semiconductor layer. A gate electrode is formed in the recess and an insulating film is formed between the third nitride semiconductor layer and the gate electrode.
摘要翻译：场效应晶体管包括：具有垂直于（0001）面的平面或相对于（0001）面倾斜的平面作为主表面的第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 形成在所述第二氮化物半导体层上的第三氮化物半导体层; 以及形成为与第二氮化物半导体层或第三氮化物半导体层的至少一部分接触的源电极和漏电极。在第三氮化物半导体层中的源电极和漏电极之间形成露出第二氮化物半导体层的一部分的凹部。在凹部中形成栅电极，在第三氮化物半导体层和栅电极之间形成绝缘膜。

2. 发明授权

US07936049B2 Nitride semiconductor device and manufacturing method thereof 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US07936049B2
公开(公告)日：2011-05-03
申请号：US12823325
申请日：2010-06-25
申请人： Masayuki Kuroda , Tetsuzo Ueda
发明人： Masayuki Kuroda , Tetsuzo Ueda
IPC分类号： H01L21/338 , H01L29/812 , H01L29/778
CPC分类号： H01L29/7787 , H01L29/045 , H01L29/2003 , H01L29/41766 , H01L29/66462
摘要： It is an object of the present invention to provide a nitride semiconductor device with low parasitic resistance by lowering barrier height to reduce contact resistance at an interface of semiconductor and metal. The nitride semiconductor device includes a GaN layer, a device isolation layer, an ohmic electrode, an n-type Al0.25Ga0.75N layer, a sapphire substrate, and a buffer layer. A main surface of the n-type Al0.25Ga0.75N layer is on (0 0 0 1) plane as a main surface, and concaves are arranged in a checkerboard pattern on the surface. The ohmic electrode contacts the sides of the concaves of the n-type Al0.25Ga0.75N layer, and the sides of the concaves are on non-polar surfaces such as (1 1 −2 0) plane or (1 −1 0 0) plane.
摘要翻译：本发明的目的是通过降低势垒高度来提供具有低寄生电阻的氮化物半导体器件，以降低半导体和金属界面处的接触电阻。氮化物半导体器件包括GaN层，器件隔离层，欧姆电极，n型Al0.25Ga0.75N层，蓝宝石衬底和缓冲层。 n型Al0.25Ga0.75N层的主表面在（0 0 0 1）平面上作为主表面，并且凹面以表格形式布置在棋盘图案中。欧姆电极接触n型Al0.25Ga0.75N层的凹面的侧面，凹面的两侧在非极性表面上，例如（11-2 -2）面或（1-1000））飞机。

3. 发明授权

US07777305B2 Nitride semiconductor device and manufacturing method thereof 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US07777305B2
公开(公告)日：2010-08-17
申请号：US12041825
申请日：2008-03-04
申请人： Masayuki Kuroda , Tetsuzo Ueda
发明人： Masayuki Kuroda , Tetsuzo Ueda
IPC分类号： H01L21/388 , H01L29/812 , H01L29/778
CPC分类号： H01L29/7787 , H01L29/045 , H01L29/2003 , H01L29/41766 , H01L29/66462
摘要： It is an object of the present invention to provide a nitride semiconductor device with low parasitic resistance by lowering barrier height to reduce contact resistance at an interface of semiconductor and metal. The nitride semiconductor device includes a GaN layer, a device isolation layer, an ohmic electrode, an n-type Al0.25Ga0.75N layer, a sapphire substrate, and a buffer layer. A main surface of the n-type Al0.25Ga0.75N layer is on (0 0 0 1) plane as a main surface, and concaves are arranged in a checkerboard pattern on the surface. The ohmic electrode contacts the sides of the concaves of the n-type Al0.25Ga0.75N layer, and the sides of the concaves are on non-polar surfaces such as (1 1 −2 0) plane or (1 −1 0 0) plane.
摘要翻译：本发明的目的是通过降低势垒高度来提供具有低寄生电阻的氮化物半导体器件，以降低半导体和金属界面处的接触电阻。氮化物半导体器件包括GaN层，器件隔离层，欧姆电极，n型Al0.25Ga0.75N层，蓝宝石衬底和缓冲层。 n型Al0.25Ga0.75N层的主表面在（0 0 0 1）平面上作为主表面，并且凹面以表格形式布置在棋盘图案中。欧姆电极接触n型Al0.25Ga0.75N层的凹面的侧面，凹面的两侧在非极性表面上，例如（11-2 -2）面或（1-1000））飞机。

4. 发明申请

US20060261371A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20060261371A1
公开(公告)日：2006-11-23
申请号：US11382994
申请日：2006-05-12
申请人： Masayuki Kuroda , Hidetoshi Ishida , Tetsuzo Ueda
发明人： Masayuki Kuroda , Hidetoshi Ishida , Tetsuzo Ueda
IPC分类号： H01L29/739
CPC分类号： H01L29/7787 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02661 , H01L29/045 , H01L29/1608 , H01L29/66462
摘要： An object of the present invention is to provide a semiconductor device and a manufacturing method thereof which can realize a normally-off field-effect transistor made of a III group nitride semiconductor. The present invention includes: placing a sapphire substrate in a crystal growth chamber; forming a low-temperature GaN buffer layer made of GaN as the III group nitride semiconductor, on a main surface of the sapphire substrate by a MOCVD method; and forming a GaN layer on the low-temperature GaN buffer layer by the MOCVD method. Here, a [11-20] axis of the GaN layer is perpendicular to the main surface of the sapphire substrate.
摘要翻译：本发明的目的是提供一种能够实现由III族氮化物半导体构成的常关的场效应晶体管的半导体器件及其制造方法。本发明包括：将蓝宝石衬底放置在晶体生长室中; 通过MOCVD方法在蓝宝石衬底的主表面上形成由GaN构成的III族氮化物半导体的低温GaN缓冲层; 并通过MOCVD法在低温GaN缓冲层上形成GaN层。这里，GaN层的[11-20]轴垂直于蓝宝石衬底的主表面。

5. 发明授权

US07595544B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07595544B2
公开(公告)日：2009-09-29
申请号：US11382994
申请日：2006-05-12
申请人： Masayuki Kuroda , Hidetoshi Ishida , Tetsuzo Ueda
发明人： Masayuki Kuroda , Hidetoshi Ishida , Tetsuzo Ueda
IPC分类号： H01L29/04
CPC分类号： H01L29/7787 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02661 , H01L29/045 , H01L29/1608 , H01L29/66462
摘要： An object of the present invention is to provide a semiconductor device and a manufacturing method thereof which can realize a normally-off field-effect transistor made of a III group nitride semiconductor. The present invention includes: placing a sapphire substrate in a crystal growth chamber; forming a low-temperature GaN buffer layer made of GaN as the III group nitride semiconductor, on a main surface of the sapphire substrate by a MOCVD method; and forming a GaN layer on the low-temperature GaN buffer layer by the MOCVD method. Here, a [11-20] axis of the GaN layer is perpendicular to the main surface of the sapphire substrate.
摘要翻译：本发明的目的是提供一种能够实现由III族氮化物半导体构成的常关的场效应晶体管的半导体器件及其制造方法。本发明包括：将蓝宝石衬底放置在晶体生长室中; 通过MOCVD方法在蓝宝石衬底的主表面上形成由GaN构成的III族氮化物半导体的低温GaN缓冲层; 并通过MOCVD法在低温GaN缓冲层上形成GaN层。这里，GaN层的[11-20]轴垂直于蓝宝石衬底的主表面。

6. 发明申请

US20080258243A1 FIELD EFFECT TRANSISTOR 有权
标题翻译：场效应晶体管
公开(公告)号：US20080258243A1
公开(公告)日：2008-10-23
申请号：US12060505
申请日：2008-04-01
申请人： Masayuki Kuroda , Tetsuzo Ueda
发明人： Masayuki Kuroda , Tetsuzo Ueda
IPC分类号： H01L49/00
CPC分类号： H01L29/7787 , H01L29/045 , H01L29/2003 , H01L29/4236 , H01L29/42376 , H01L29/452 , H01L29/518 , H01L29/66462
摘要： A field effect transistor includes: a first nitride semiconductor layer having a plane perpendicular to a (0001) plane or a plane tilted with respect to the (0001) plane as a main surface; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider bandgap than the first nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer; and a source electrode and a drain electrode formed so as to contact at least a part of the second nitride semiconductor layer or the third nitride semiconductor layer. A recess that exposes a part of the second nitride semiconductor layer is formed between the source electrode and the drain electrode in the third nitride semiconductor layer. A gate electrode is formed in the recess and an insulating film is formed between the third nitride semiconductor layer and the gate electrode.
摘要翻译：场效应晶体管包括：具有垂直于（0001）面的平面或相对于（0001）面倾斜的平面作为主表面的第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 形成在所述第二氮化物半导体层上的第三氮化物半导体层; 以及形成为与第二氮化物半导体层或第三氮化物半导体层的至少一部分接触的源电极和漏电极。在第三氮化物半导体层中的源电极和漏电极之间形成露出第二氮化物半导体层的一部分的凹部。在凹部中形成栅电极，在第三氮化物半导体层和栅电极之间形成绝缘膜。

7. 发明授权

US08089096B2 Field effect transistor with main surface including C-axis 有权
标题翻译：场效应晶体管主表面包括C轴
公开(公告)号：US08089096B2
公开(公告)日：2012-01-03
申请号：US11470316
申请日：2006-09-06
申请人： Hidetoshi Ishida , Masayuki Kuroda , Tetsuzo Ueda
发明人： Hidetoshi Ishida , Masayuki Kuroda , Tetsuzo Ueda
IPC分类号： H01L29/778 , H01L29/04
CPC分类号： H01L29/7787 , H01L29/2003
摘要： A normally-off type field effect transistor includes: a first semiconductor layer which is made of a first hexagonal crystal with 6 mm symmetry and has a main surface including a C-axis of the first hexagonal crystal; a second semiconductor layer which is formed on the main surface of the first semiconductor layer and is made of a second hexagonal crystal with 6 mm symmetry having a band gap different from a band gap of the first hexagonal crystal; and a gate electrode, a source electrode and a drain electrode that are formed on the second semiconductor layer. Here, the film thickness of the first nitride semiconductor layer is 1.5 μm or less and the second semiconductor layer is doped with impurities at a dose of 1×1013 cm−2 or more.
摘要翻译：常关型场效应晶体管包括：第一半导体层，其由具有6mm对称性的第一六边形晶体制成并且具有包括第一六边形晶体的C轴的主表面; 第二半导体层，其形成在所述第一半导体层的主表面上，并且由具有与所述第一六边形晶体的带隙不同的带隙的6mm对称的第二六边形晶体制成; 以及形成在第二半导体层上的栅电极，源电极和漏电极。这里，第一氮化物半导体层的膜厚为1.5μm以下，第二半导体层以1×1013cm-2以上的剂量掺杂杂质。

8. 发明授权

US07800116B2 Group III-nitride semiconductor device with a cap layer 有权
标题翻译：具有盖层的III族氮化物半导体器件
公开(公告)号：US07800116B2
公开(公告)日：2010-09-21
申请号：US12058114
申请日：2008-03-28
申请人： Tomohiro Murata , Masayuki Kuroda , Tetsuzo Ueda
发明人： Tomohiro Murata , Masayuki Kuroda , Tetsuzo Ueda
IPC分类号： H01L31/0256
CPC分类号： H01L29/155 , H01L29/2003 , H01L29/4175 , H01L29/432 , H01L29/513 , H01L29/66462 , H01L29/7786
摘要： A semiconductor device includes: a first semiconductor layer which is made of a first group III nitride semiconductor; a cap layer which is formed on the first semiconductor layer, which is made of a second group III nitride semiconductor, and which has an opening for exposing the first semiconductor layer; and a source electrode and a drain electrode which are formed on the cap layer so as to oppose to each other with the opening interposed. A gate electrode is formed on the bottom face of the opening with an insulating film interposed. The insulating film is formed on at least a part of the first semiconductor layer which is exposed through the opening.
摘要翻译：半导体器件包括：由第一III族氮化物半导体制成的第一半导体层; 盖层，其形成在由第二III族氮化物半导体制成的第一半导体层上，并且具有用于暴露第一半导体层的开口; 以及源极电极和漏极电极，其形成在盖层上，以便插入开口彼此相对。在绝缘膜插入的开口的底面上形成栅电极。绝缘膜形成在通过开口露出的第一半导体层的至少一部分上。

9. 发明授权

US09308777B2 Bearing device for a wheel 有权
标题翻译：车轮轴承装置
公开(公告)号：US09308777B2
公开(公告)日：2016-04-12
申请号：US14317097
申请日：2014-06-27
申请人： Tohru Nakagawa , Yuichi Asano , Masahiro Ozawa , Masayuki Kuroda
发明人： Tohru Nakagawa , Yuichi Asano , Masahiro Ozawa , Masayuki Kuroda
IPC分类号： F16C13/00 , B60B27/00 , F16D1/072 , F16D1/108 , F16C35/063 , F16C19/18 , B21D53/10 , F16D1/10
CPC分类号： B60B27/0078 , B21D53/10 , B60B27/0005 , B60B27/0026 , B60B27/0042 , B60B27/0084 , B60B27/0094 , F16C19/184 , F16C19/186 , F16C35/0635 , F16C2326/02 , F16D1/072 , F16D1/108 , F16D2001/103 , Y10T29/49535
摘要： A bearing device for a wheel is capable of suppressing radial play and allowing firm and easy connection between a hub and an outer ring of a constant velocity universal joint. Axially extending projections are provided on a shaft portion of a joint outer ring, and the shaft portion is press-fitted into a hole of a hub. Through this press-fitting, recesses held in close fit-engagement with the projections are formed by the projections in an inner diameter surface of the hub, forming a recess/projection fit-engagement structure in which the projections and the recesses are held in close contact with each other over an entire fit-engagement region thereof. A press-fitting margin (Δd) of the projections with respect to the hub and a height (h) of the projections are set to the following range: 0.3
摘要翻译：用于车轮的轴承装置能够抑制径向游隙，并且允许轮毂和等速万向接头的外圈之间的牢固和容易的连接。轴向延伸突起设置在接头外圈的轴部上，轴部被压配合到轮毂的孔中。通过这种压配合，通过轮毂的内径表面中的突起形成与突起紧密配合的凹部，形成凹部/突起配合接合结构，其中突起和凹部保持紧密在其整个配合接合区域彼此接触。突起相对于毂的压配边缘（＆Dgr; d）和突起的高度（h）设定在以下范围：0.3 <＆Dgr; d / 2h <0.86。

10. 发明申请

US20110212789A1 FIXED CONSTANT VELOCITY UNIVERSAL JOINT 审中-公开
标题翻译：固定不变速度通用接头
公开(公告)号：US20110212789A1
公开(公告)日：2011-09-01
申请号：US13127561
申请日：2009-11-27
申请人： Hirokazu Ooba , Masayuki Kuroda , Hisaaki Kura , Tatsuro Sugiyama , Teruaki Fujio
发明人： Hirokazu Ooba , Masayuki Kuroda , Hisaaki Kura , Tatsuro Sugiyama , Teruaki Fujio
IPC分类号： F16D3/223
CPC分类号： F16D3/2233 , F16D3/2237 , F16D2003/22306
摘要： Wedge angles are formed between mutually facing central track-groove portions (11b, 12b, 21b, 22b) of an outer joint member (1) and an inner joint member (2). Track grooves (11, 12) provided to the outer joint member (1) and track grooves (21, 22) provided to the inner joint member (2) include a first pair of track grooves (11, 21) respectively including the central track-groove portions (11b, 21b) forming therebetween the wedge angle (α) opening to an opening side of the outer joint member (1) under a state in which an operating angle is 0°, and a second pair of track grooves (12, 22) respectively including the central track-groove portions (12b, 22b) oppositely forming therebetween the wedge angle (β) opening to an inner-end side of the outer joint member (1) under the state in which the operating angle is 0° . Both the first track groove (11) and the second track groove (12) of the outer joint member (1) include opening-side track-groove portions (11c, 12c) connected respectively to the central track-groove portions (11b, 12b) directly, each of the opening-side track-groove portions (11c, 12c) being formed in such a shape as to be free from an undercut toward the opening side. Accordingly, it is possible to manufacture at low cost a high-efficient fixed type constant velocity universal joint which involves less torque loss.
摘要翻译：楔形角形成在外侧接头构件（1）和内侧接头构件（2）的相互面对的中心轨道槽部（11b，12b，21b，22b）之间。设置在外侧接头部件（1）上的履带槽（11,12）和设置于内侧接头部件（2）的履带槽（21,22）包括：第一对履带槽（11,21），分别包括中心轨道 - 沟槽部分（11b，21b）之间形成在操作角度为0°的状态下向外侧接头构件（1）的开口侧开口的楔角（α）和第二对轨道槽（12 ，22），分别包括在所述外侧接头构件（1）的内侧侧与所述外侧接头构件（1）的内侧侧面相反地形成的中心轨道槽部（12b，22b），所述楔形角（＆amp; bgr） 0°。外侧接头构件（1）的第一轨道槽（11）和第二轨道槽（12）都分别与中心轨道槽部（11b，12b）连接的开口侧轨道槽部（11c，12c）），每个开口侧轨道槽部分（11c，12c）形成为朝向开口侧没有底切的形状。因此，可以低成本地制造涉及较小转矩损失的高效率固定式等速万向接头。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式