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    • 1. 发明申请
    • METAL OR SEMICONDUCTOR MELT REFINEMENT METHOD, AND VACUUM REFINEMENT DEVICE
    • 金属或半导体熔融精炼方法和真空精炼装置
    • US20150082942A1
    • 2015-03-26
    • US14374941
    • 2012-02-06
    • Yutaka KishidaHitoshi DohnomaeJiro KondoKiyoshi GotoWataru Ohashi
    • Yutaka KishidaHitoshi DohnomaeJiro KondoKiyoshi GotoWataru Ohashi
    • F27B14/14C22B9/02B01D1/02F27B14/04F27B14/06C22B9/04F27D99/00
    • F27B14/14B01D1/02C01B33/037C22B9/02C22B9/04F27B14/04F27B14/06F27B2014/045F27D99/0006F27D2099/0008
    • An objective of the present invention is, in refining a metal or a semiconductor melt, without impairing refining efficiency, to alleviate wear and tear commensurate with unevenness in a crucible caused by instability in melt flow, and to allow safe operation over long periods of time such that leakages from the crucible do not occur. Provided is a metal or semiconductor melt refining method, in which, by using an AC resistance heating heater as a crucible heating method, the melt is heat retained and mixed by a rotating magnetic field which is generated by the resistance heating heater. The metal or semiconductor melt refinement method and a vacuum refinement device which is optimal for the refinement method are characterized in that, in order that a fluid instability does not occur in the boundary between the melt and the bottom face of the crucible when the melt is rotated by the rotating magnetic field, with a kinematic viscosity coefficient of the melt designated ν (m2/sec), the radius of the fluid surface of the melt designated R (m), and the rotational angular velocity of the melt designated Ω (rad/sec), the operation is carried out such that the value of a Reynolds number (Re) which is defined as Re=R×(Ω/ν)̂(1/2) does not exceed 600.
    • 本发明的目的是在不损害精炼效率的同时,在精炼金属或半导体熔体的同时,减轻由熔体流动不稳定引起的坩埚中的不均匀度的磨损和撕裂,并允许长时间的安全运行 从而不会发生坩埚的泄漏。 提供一种金属或半导体熔融精炼方法,其中通过使用交流电阻加热器作为坩埚加热方法,通过由电阻加热器产生的旋转磁场将熔体热保持并混合。 金属或半导体熔体精制方法和对精制方法最佳的真空精制装置的特征在于,为了在熔体与坩埚的底面之间的边界处不会发生流体不稳定性,当熔体是 通过旋转磁场旋转,熔体的运动粘度系数指定为ngr; (m2 / sec),指定为R(m)的熔体的流体表面的半径以及指定为&OHgr的熔体的旋转角速度; (rad / sec),进行操作,使得被定义为Re = R×(&OHgr; /&ngr;)(1/2)的雷诺数(Re)的值不超过600。
    • 2. 发明授权
    • Process for manufacturing planographic printing plate
    • 平版印刷版制造工艺
    • US5380612A
    • 1995-01-10
    • US59750
    • 1993-05-12
    • Yasuo KojimaKatsura HiraiKiyoshi Goto
    • Yasuo KojimaKatsura HiraiKiyoshi Goto
    • G03G13/26G03G5/05G03G5/07G03G13/28G03G13/10G03G13/22G03G13/12
    • G03G13/28G03G5/0517G03G5/075
    • A process for manufacturing a planographic printing plate using a photosensitive planographic printing plate comprising a conductive support and provided thereon, a photoconductive layer containing an alkali soluble resin, a photoconductor and a photosolubilizable photosensitive compound comprises the steps of forming an electrophotographic latent image on the photoconductive layer, developing the latent image with liquid developer to form a toner image layer, uniformly exposing overall to actinic light the entire photoconductive layer, and removing the photoconductive layer where no toner image layer has been formed, the transmission density of the toner image layer to the actinic light being not less than 0.6, and the transmission density per unit thickness of the toner image layer to the actinic light being not less than 0.03 dm.sup.2 /g.
    • 使用包含导电性支持体并设置在其上的光敏平版印刷版的平版印刷版的制造方法,含有碱溶性树脂的感光层,光电导体和光致变色性感光性化合物,包括以下步骤:在光电导 层,用液体显影剂显影潜像以形成调色剂图像层,整体光敏光均匀地曝光整个光电导层,以及除去其上没有形成调色剂图像层的光电导层,调色剂图像层的透射密度 光化光不小于0.6,并且调色剂图像层与光化光的每单位厚度的透射密度不小于0.03dm 2 / g。