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1. 发明授权

US07455822B2 Method for production of silicon 失效
标题翻译：生产硅的方法
公开(公告)号：US07455822B2
公开(公告)日：2008-11-25
申请号：US10490584
申请日：2003-07-22
申请人： Jiro Kondo , Masaki Okajima , Shinji Tokumaru , Hitoshi Dohnomae
发明人： Jiro Kondo , Masaki Okajima , Shinji Tokumaru , Hitoshi Dohnomae
IPC分类号： C01B33/02
CPC分类号： C01B33/021
摘要： A process for production of Si, characterized by adding an oxide, hydroxide, carbonate or fluoride of an alkali metal element, or an oxide, hydroxide, carbonate or fluoride of an alkaline earth metal element, or two or more of such compounds, to solid SiO in a total molar amount of from 1/20 to 1000 times with respect to the moles of solid SiO, heating the mixture at between the melting point of Si and 2000° C. to induce a chemical reaction which produces Si and separating and recovering the Si from the reaction by-product, for the purpose of inexpensively and efficiently producing Si from various forms of solid SiO with no industrial value produced from Si production steps and the like.
摘要翻译：一种制备Si的方法，其特征在于将碱金属元素的氧化物，氢氧化物，碳酸盐或氟化物，或碱土金属元素的氧化物，氢氧化物，碳酸盐或氟化物，或两种或更多种这些化合物加入到固体 SiO的总摩尔量相对于固体SiO的摩尔数为1/20至1000倍，在Si的熔点和2000℃之间加热混合物以引起产生Si的化学反应并分离和回收来自反应副产物的Si，目的是从Si生产步骤等产生的没有工业价值的各种形式的固体SiO低成本和有效地生产Si。

2. 发明授权

US09937436B2 Silicon refining equipment and method for refining silicon 有权
公开(公告)号：US09937436B2
公开(公告)日：2018-04-10
申请号：US14374687
申请日：2012-02-03
申请人： Hitoshi Dohnomae
发明人： Hitoshi Dohnomae
IPC分类号： C01B33/037 , B01D1/30 , B01D5/00
CPC分类号： B01D1/30 , B01D5/006 , C01B33/037
摘要： In this method for refining silicon by vacuum melting, the falling of impurity condensate from an impurity trap located above a crucible and contamination of the molten silicon are prevented. A crucible for housing molten silicon, and a heating means for heating the crucible are located inside a treatment chamber equipped with a vacuum pump; further provided are: an impurity trap having an impurity condensation unit for cooling and condensing the vapor of impurities evaporating from the liquid surface of the molten silicon; and a contamination prevention device for preventing contamination of the molten silicon, having an impurity catch unit for catching impurities when impurities trapped by the impurity trap fall.

3. 发明申请

US20150082942A1 METAL OR SEMICONDUCTOR MELT REFINEMENT METHOD, AND VACUUM REFINEMENT DEVICE 审中-公开
标题翻译：金属或半导体熔融精炼方法和真空精炼装置
公开(公告)号：US20150082942A1
公开(公告)日：2015-03-26
申请号：US14374941
申请日：2012-02-06
申请人： Yutaka Kishida , Hitoshi Dohnomae , Jiro Kondo , Kiyoshi Goto , Wataru Ohashi
发明人： Yutaka Kishida , Hitoshi Dohnomae , Jiro Kondo , Kiyoshi Goto , Wataru Ohashi
IPC分类号： F27B14/14 , C22B9/02 , B01D1/02 , F27B14/04 , F27B14/06 , C22B9/04 , F27D99/00
CPC分类号： F27B14/14 , B01D1/02 , C01B33/037 , C22B9/02 , C22B9/04 , F27B14/04 , F27B14/06 , F27B2014/045 , F27D99/0006 , F27D2099/0008
摘要： An objective of the present invention is, in refining a metal or a semiconductor melt, without impairing refining efficiency, to alleviate wear and tear commensurate with unevenness in a crucible caused by instability in melt flow, and to allow safe operation over long periods of time such that leakages from the crucible do not occur. Provided is a metal or semiconductor melt refining method, in which, by using an AC resistance heating heater as a crucible heating method, the melt is heat retained and mixed by a rotating magnetic field which is generated by the resistance heating heater. The metal or semiconductor melt refinement method and a vacuum refinement device which is optimal for the refinement method are characterized in that, in order that a fluid instability does not occur in the boundary between the melt and the bottom face of the crucible when the melt is rotated by the rotating magnetic field, with a kinematic viscosity coefficient of the melt designated ν (m2/sec), the radius of the fluid surface of the melt designated R (m), and the rotational angular velocity of the melt designated Ω (rad/sec), the operation is carried out such that the value of a Reynolds number (Re) which is defined as Re=R×(Ω/ν)̂(1/2) does not exceed 600.
摘要翻译：本发明的目的是在不损害精炼效率的同时，在精炼金属或半导体熔体的同时，减轻由熔体流动不稳定引起的坩埚中的不均匀度的磨损和撕裂，并允许长时间的安全运行从而不会发生坩埚的泄漏。提供一种金属或半导体熔融精炼方法，其中通过使用交流电阻加热器作为坩埚加热方法，通过由电阻加热器产生的旋转磁场将熔体热保持并混合。金属或半导体熔体精制方法和对精制方法最佳的真空精制装置的特征在于，为了在熔体与坩埚的底面之间的边界处不会发生流体不稳定性，当熔体是通过旋转磁场旋转，熔体的运动粘度系数指定为ngr; （m2 / sec），指定为R（m）的熔体的流体表面的半径以及指定为＆OHgr的熔体的旋转角速度; （rad / sec），进行操作，使得被定义为Re = R×（＆OHgr; /＆ngr;）（1/2）的雷诺数（Re）的值不超过600。

4. 发明申请

US20150075223A1 SILICON PURIFICATION APPARATUS AND SILICON PURIFICATION METHOD 审中-公开
标题翻译：硅氧烷纯化装置和硅氧烷纯化方法
公开(公告)号：US20150075223A1
公开(公告)日：2015-03-19
申请号：US14372903
申请日：2012-01-18
申请人： Hitoshi Dohnomae
发明人： Hitoshi Dohnomae
IPC分类号： C01B33/037
CPC分类号： C01B33/037
摘要： Provided are a silicon purification apparatus that uses a ring-shaped thermal-insulating lid, which can be replaced while heating a crucible, as a thermal-insulating means for keeping the surface of a silicon melt at a high temperature, and has a simple structure and is easy to produce, said silicon purification apparatus being capable of continuously processing several tens of portions of charged silicon with the crucible heated as is; a silicon purification method that makes use of the silicon purification apparatus; and a purification method. The present invention pertains to a silicon purification apparatus, which is provided with, inside a depressurization chamber equipped with a vacuum pump, a graphite crucible having an opening at the upper end and accommodating silicon therein, and a heating device for heating said crucible, said silicon purification apparatus being characterized by being provided with a ring-shaped thermal-insulating lid that covers the opening of the crucible at the top of the crucible and has an exhaust opening with an area smaller than the surface of the silicon melt inside the crucible, said thermal-insulating lid being capable of being replaced during heating of the crucible in the decompression chamber. The present invention further pertains to a silicon purification method that makes use of the silicon purification apparatus.
摘要翻译：提供一种硅纯化装置，其使用可以在加热坩埚时更换的环形绝热盖作为将硅熔体的表面保持在高温的绝热装置，并且具有简单的结构并且易于生产，所述硅纯化装置能够在坩埚被加热的状态下连续加工数十个带电硅的部分; 使用硅纯化装置的硅纯化方法; 和纯化方法。本发明涉及一种硅精制装置，该装置设置有配备有真空泵的减压室内，在上端具有开口并容纳硅的石墨坩埚，以及加热上述坩埚的加热装置，硅纯化装置的特征在于设置有覆盖坩埚顶部的坩埚的开口的环形绝热盖，并且具有面积小于坩埚内的硅熔体表面的排气口，所述绝热盖能够在对减压室中的坩埚加热期间进行更换。本发明还涉及利用硅纯化装置的硅纯化方法。

5. 发明申请

US20150028268A1 METHOD FOR MANUFACTURING HIGHLY PURE SILICON, HIGHLY PURE SILICON OBTAINED BY THIS METHOD, AND SILICON RAW MATERIAL FOR MANUFACTURING HIGHLY PURE SILICON 审中-公开
标题翻译：制造高纯度硅的方法，采用本方法获得的高纯硅，以及制造高纯度硅的硅原料
公开(公告)号：US20150028268A1
公开(公告)日：2015-01-29
申请号：US14383321
申请日：2012-03-08
申请人： Shinji Tokumaru , Masataka HIiyoshi , Jiro Kondo , Hitoshi Dohnomae , Yutaka Kishida , Shigeru Nakazawa , Kozo Onoue
发明人： Shinji Tokumaru , Masataka HIiyoshi , Jiro Kondo , Hitoshi Dohnomae , Yutaka Kishida , Shigeru Nakazawa , Kozo Onoue
IPC分类号： C01B33/037 , H01L31/0288
CPC分类号： C01B33/037 , C01B33/021 , C30B11/002 , C30B11/007 , C30B13/10 , C30B21/00 , C30B29/06 , H01L31/0288
摘要： Provided are a method for manufacturing a highly pure silicon by unidirectional solidification of molten silicon, that can inexpensively and industrially easily manufacture highly pure silicon that has a low oxygen concentration and low carbon concentration and is suitable for applications such as manufacturing solar cells; highly pure silicon obtained by this method and silicon raw material for manufacturing highly pure silicon. A method for manufacturing highly pure silicon using molten silicon containing 100 to 1000 ppmw of carbon and 0.5 to 2000 ppmw of germanium as the raw material when manufacturing highly pure silicon by unidirectionally solidifying molten silicon raw material in a casting container, the highly pure silicon obtained by this method, and the silicon raw material for manufacturing the highly pure silicon.
摘要翻译：提供一种通过熔融硅的单向凝固来制造高纯度硅的方法，其可以廉价和工业上容易地制造具有低氧浓度和低碳浓度的高纯度硅，并且适用于制造太阳能电池的应用; 通过该方法获得的高纯度硅和用于制造高纯度硅的硅原料。通过在铸造容器中单独固化熔融硅原料制造高纯度硅时，使用含有100〜1000ppmw碳和0.5〜2000ppmw的锗作为原料的熔融硅制造高纯硅的方法，得到高纯硅通过该方法和用于制造高纯度硅的硅原料。

6. 发明授权

US07153559B2 Ceramic-metal composite body, composite structure for transporting oxide ion, and composite body having sealing property 有权
标题翻译：陶瓷 - 金属复合体，用于输送氧化物离子的复合结构和具有密封性的复合体
公开(公告)号：US07153559B2
公开(公告)日：2006-12-26
申请号：US10363969
申请日：2001-09-07
申请人： Wataru Ito , Tadashi Sakon , Hitoshi Dohnomae , Toru Nagai
发明人： Wataru Ito , Tadashi Sakon , Hitoshi Dohnomae , Toru Nagai
IPC分类号： B01D61/36 , B01D63/06 , B32B1/04 , B32B1/06 , B32B7/04 , B32B10/08
CPC分类号： H01M8/0282 , B01D53/22 , B01D63/02 , B01D67/0046 , B01D71/02 , B01D71/024 , B01D2313/38 , B01D2313/42 , B01D2323/08 , B01D2323/12 , B01D2325/04 , B01J8/009 , B01J12/007 , B01J19/0073 , B01J19/02 , B01J19/2475 , B01J2219/0218 , B01J2219/0236 , C01B13/0255 , C01B2210/0046 , C01G51/006 , C01G51/44 , C01G51/66 , C01G51/68 , C01P2002/34 , C01P2006/40 , H01M8/0271 , H01M2008/1293 , Y02P20/149 , Y10T428/24174 , Y10T428/24322 , Y10T428/24331 , Y10T428/2462 , Y10T428/249997
摘要： A sealing technique is established in which a seal can be easily formed and which is excellent in reliability and a heat cycle property in a high temperature region of 800° C. or higher, so as to provide a composite body preferably used for a device for producing pure oxygen, oxygen-rich air, and the like, a membrane reactor represented by that for partial oxidation of a hydrocarbon gas, a solid oxide fuel cell, an oxygen purification device, a heat exchanger, or the like. The present invention makes it possible to increase a possibility of practical use in a wide area which has been delayed in development owing to a bottleneck of improvement in a sealing property. Particularly, its application to the device for producing pure oxygen, oxygen-rich air, or the like, the membrane reactor represented by that for partial oxidation of the hydrocarbon gas, the solid oxide fuel cell, the oxygen purification device, the heat exchanger, or the like can greatly contribute to acceleration of the development.
摘要翻译：建立了一种密封技术，其中可以容易地形成密封件，并且在800℃或更高的高温区域中的可靠性和热循环性能优异，从而提供优选用于装置的装置的复合体生产纯氧，富氧空气等，用于烃气体的部分氧化，固体氧化物燃料电池，氧气净化装置，热交换器等的膜反应器。本发明可以提高由于密封性能提高的瓶颈而在开发延迟的广泛领域中的实际应用的可能性。特别是其用于生产纯氧，富氧空气等的装置，用于烃气体部分氧化的膜反应器，固体氧化物燃料电池，氧气净化装置，热交换器，等等可以极大地促进开发的加速。

7. 发明授权

US10370253B2 Silicon refining device 有权
公开(公告)号：US10370253B2
公开(公告)日：2019-08-06
申请号：US14381150
申请日：2012-03-09
申请人： Yutaka Kishida , Hitoshi Dohnomae
发明人： Yutaka Kishida , Hitoshi Dohnomae
IPC分类号： C01B33/037 , B01J6/00
摘要： Provided is a silicon refining device that is used when industrially producing silicon of high purity by vacuum melting, has a high P removal rate and thus high productivity, and is a practical device cost-wise with a simple and cheap device configuration. This silicon refining device comprises, in a decompression vessel provided with a vacuum pump, a crucible that contains a metal silicon material, a heating device that heats the crucible, and a molten metal surface thermal insulation member that covers the upper portion of silicon molten metal and has an exhaust opening with an opening area that is smaller than the silicon molten metal surface area. The molten metal surface thermal insulation member comprises a laminated insulation material with a multilayer structure in which three or more laminates are laminated at predetermined intervals from each other, and which exhibits a radiant heat insulating function based on the multilayer structure.

8. 发明申请

US20150033798A1 SILICON REFINING DEVICE 审中-公开
标题翻译：硅精炼装置
公开(公告)号：US20150033798A1
公开(公告)日：2015-02-05
申请号：US14381150
申请日：2012-03-09
申请人： Yutaka Kishida , Hitoshi Dohnomae
发明人： Yutaka Kishida , Hitoshi Dohnomae
IPC分类号： C01B33/037
CPC分类号： C01B33/037 , B01J6/007 , B01J2219/00155
摘要： Provided is a silicon refining device that is used when industrially producing silicon of high purity by vacuum melting, has a high P removal rate and thus high productivity, and is a practical device cost-wise with a simple and cheap device configuration. This silicon refining device comprises, in a decompression vessel provided with a vacuum pump, a crucible that contains a metal silicon material, a heating device that heats the crucible, and a molten metal surface thermal insulation member that covers the upper portion of silicon molten metal and has an exhaust opening with an opening area that is smaller than the silicon molten metal surface area. The molten metal surface thermal insulation member comprises a laminated insulation material with a multilayer structure in which three or more laminates are laminated at predetermined intervals from each other, and which exhibits a radiant heat insulating function based on the multilayer structure.
摘要翻译：本发明提供一种在通过真空熔融工业生产高纯度硅的硅精炼装置中，具有高P去除率和高生产率的硅精炼装置，并且成本低廉的装置结构是实用的装置。该硅精制装置在具有真空泵的减压容器中包括含有金属硅材料的坩埚，加热坩埚的加热装置和覆盖硅熔融金属上部的熔融金属表面保温部件并且具有开口面积小于硅熔融金属表面积的排气口。熔融金属表面绝热构件包括具有多层结构的层压绝缘材料，其中三个或更多个层叠体以预定间隔彼此层叠，并且基于多层结构呈现辐射绝热功能。

9. 发明授权

US5702793A Magneto-optical recording medium, disk and method of manufacturing the same 失效
标题翻译：磁光记录介质，磁盘及其制造方法
公开(公告)号：US5702793A
公开(公告)日：1997-12-30
申请号：US201385
申请日：1994-02-24
申请人： Kenji Shimokawa , Hitoshi Dohnomae , Toshio Mukai , Kengo Shimanoe
发明人： Kenji Shimokawa , Hitoshi Dohnomae , Toshio Mukai , Kengo Shimanoe
IPC分类号： G11B11/105 , H01F10/32 , G11B5/66
CPC分类号： B82Y25/00 , G11B11/10582 , G11B11/10586 , H01F10/3209 , Y10S428/90 , Y10T428/265
摘要： A high density magneto-optical recording medium utilizing a polycrystalline garnet two-layer film. The film thickness of an under layer of the garnet polycrystal on a glass substrate is made 100 nm or less, and a crystal grain diameter of a recording layer formed thereon is made 0.1 .mu.m or less. Furthermore, the under layer is demagnetized at room temperature. With this, a bit having a regular shape can be written, thus reducing medium noise by a large margin.
摘要翻译：一种利用多晶石榴石双层膜的高密度磁光记录介质。玻璃基板上的石榴石多晶体的下层的膜厚为100nm以下，其上形成的记录层的结晶粒径为0.1μm以下。此外，底层在室温下退磁。由此，可以写入具有规则形状的位，从而大大减少了介质噪声。

10. 发明授权

US10167199B2 Method for manufacturing highly pure silicon, highly pure silicon obtained by this method, and silicon raw material for manufacturing highly pure silicon 有权
公开(公告)号：US10167199B2
公开(公告)日：2019-01-01
申请号：US14383321
申请日：2012-03-08
申请人： Shinji Tokumaru , Masataka Hiyoshi , Jiro Kondo , Hitoshi Dohnomae , Yutaka Kishida , Shigeru Nakazawa , Kozo Onoue
发明人： Shinji Tokumaru , Masataka Hiyoshi , Jiro Kondo , Hitoshi Dohnomae , Yutaka Kishida , Shigeru Nakazawa , Kozo Onoue
IPC分类号： C01B33/021 , C30B21/00 , C01B33/037 , C30B29/06 , C30B11/00 , H01L31/0288 , C30B13/10
摘要： Provided are: a method for manufacturing a highly pure silicon by unidirectional solidification of molten silicon, that can inexpensively and industrially easily manufacture highly pure silicon that has a low oxygen concentration and low carbon concentration and is suitable for applications such as manufacturing solar cells; highly pure silicon obtained by this method; and silicon raw material for manufacturing highly pure silicon. A method for manufacturing highly pure silicon using molten silicon containing 100 to 1000 ppmw of carbon and 0.5 to 2000 ppmw of germanium as the raw material when manufacturing highly pure silicon by unidirectionally solidifying molten silicon raw material in a casting container, the highly pure silicon obtained by this method, and the silicon raw material for manufacturing the highly pure silicon.

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