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1. 发明授权

US09257849B2 Electrical quantity adjusting apparatus, electrical quantity adjusting method, electrical quantity adjusting program and power supply system 有权
标题翻译：电量调节装置，电量调整方式，电量调节程序和电源系统
公开(公告)号：US09257849B2
公开(公告)日：2016-02-09
申请号：US13552023
申请日：2012-07-18
申请人： Yutaka Iino , Kyosuke Katayama , Yoshiaki Hasegawa
发明人： Yutaka Iino , Kyosuke Katayama , Yoshiaki Hasegawa
IPC分类号： H02J3/38
CPC分类号： H02J3/383 , H02J3/386 , Y02E10/563 , Y02E10/763
摘要： According to one embodiment, an electrical quantity adjusting apparatus connected to an electrical facility includes a memory unit that stores a target level which is a target electrical quantity, a presenting level deciding unit that decides a presenting level to an exterior, the presenting level being an electrical quantity relating to the electrical facility and corresponding to at least a part at the target level, a presenting level output unit that outputs the presenting level decided by the presenting level deciding unit to the exterior via a communication network, a presenting level receiving unit that receives a presenting level from the exterior via the communication network, and an adjusting unit that adjusts the electrical quantity relating to the electrical facility based on the target level, the presenting level decided by the presenting level deciding unit, and the presenting level received by the presenting level receiving unit.
摘要翻译：根据一个实施例，连接到电气设施的电量调节装置包括存储作为目标电量的目标电平的存储单元，将外部电平决定呈现电平的呈现电平决定单元，呈现电平为与电气设施相关的电量对应于目标电平的至少一部分;呈现电平输出单元，其经由通信网络将呈现电平决定单元决定的呈现电平输出到外部，呈现电平接收单元，经由通信网络从外部接收呈现级别，以及调整单元，其基于目标级别调整与电气设施相关的电量，由呈现级别决定单元确定的呈现级别和由所述呈现级别接收的呈现级别呈现级别接收单元。

2. 发明申请

US20130024034A1 ELECTRICAL QUANTITY ADJUSTING APPARATUS, ELECTRICAL QUANTITY ADJUSTING METHOD, ELECTRICAL QUANTITY ADJUSTING PROGRAM AND POWER SUPPLY SYSTEM 有权
标题翻译：电量调整装置，电量调整方法，电量调整程序和电源系统
公开(公告)号：US20130024034A1
公开(公告)日：2013-01-24
申请号：US13552023
申请日：2012-07-18
申请人： Yutaka IINO , Kyosuke Katayama , Yoshiaki Hasegawa
发明人： Yutaka IINO , Kyosuke Katayama , Yoshiaki Hasegawa
IPC分类号： G06F1/26
CPC分类号： H02J3/383 , H02J3/386 , Y02E10/563 , Y02E10/763
摘要： According to one embodiment, an electrical quantity adjusting apparatus connected to an electrical facility includes a memory unit that stores a target level which is a target electrical quantity, a presenting level deciding unit that decides a presenting level to an exterior, the presenting level being an electrical quantity relating to the electrical facility and corresponding to at least a part at the target level, a presenting level output unit that outputs the presenting level decided by the presenting level deciding unit to the exterior via a communication network, a presenting level receiving unit that receives a presenting level from the exterior via the communication network, and an adjusting unit that adjusts the electrical quantity relating to the electrical facility based on the target level, the presenting level decided by the presenting level deciding unit, and the presenting level received by the presenting level receiving unit.
摘要翻译：根据一个实施例，连接到电气设施的电量调节装置包括存储作为目标电量的目标电平的存储单元，将外部电平决定呈现电平的呈现电平决定单元，呈现电平为与电气设施相关的电量对应于目标电平的至少一部分;呈现电平输出单元，其经由通信网络将呈现电平决定单元决定的呈现电平输出到外部，呈现电平接收单元，经由通信网络从外部接收呈现级别，以及调整单元，其基于目标级别调整与电气设施相关的电量，由呈现级别决定单元确定的呈现级别和由所述呈现级别接收的呈现级别呈现级别接收单元。

3. 发明授权

US09209743B2 Fault detection apparatus and fault detection method 有权
标题翻译：故障检测装置和故障检测方法
公开(公告)号：US09209743B2
公开(公告)日：2015-12-08
申请号：US13594340
申请日：2012-08-24
申请人： Yoshiaki Hasegawa , Makoto Sato , Akihiro Suyama
发明人： Yoshiaki Hasegawa , Makoto Sato , Akihiro Suyama
IPC分类号： G01R31/11 , H02S50/10
CPC分类号： H02S50/10
摘要： According to one embodiment, an apparatus includes an first storage unit to store a value output by a communication unit, a second storage unit to store positional data indicating a place the modules, an third storage unit to store an output model indicating the relationship between a sunshine condition and an electrical output, a estimation unit to estimate a sunshine condition for each module based on the value and the output model, a forth storage unit to store the sunshine condition estimated, a correction unit to correct the sunshine condition, and a detection unit to calculate an expected electrical output for each module based on the corrected sunshine condition and the output model, and to detect a fault in the modules.
摘要翻译：根据一个实施例，一种装置包括：第一存储单元，用于存储由通信单元输出的值;第二存储单元，用于存储指示模块位置的位置数据;第三存储单元，用于存储指示a的关系的输出模型阳光条件和电输出;估计单元，用于基于所述值和所述输出模型估计每个模块的阳光条件;存储所估计的阳光条件的第四存储单元，用于校正阳光条件的校正单元和检测单元，根据修正的阳光条件和输出模型计算每个模块的预期电气输出，并检测模块中的故障。

4. 发明申请

US20130262190A1 APPARATUS AND A METHOD FOR DETERMINING A MAINTENANCE PLAN 审中-公开
标题翻译：装置和确定维护计划的方法
公开(公告)号：US20130262190A1
公开(公告)日：2013-10-03
申请号：US13710656
申请日：2012-12-11
申请人： Makoto SATO , Mari Nagasaka , Yoshiaki Hasegawa
发明人： Makoto SATO , Mari Nagasaka , Yoshiaki Hasegawa
IPC分类号： G06Q10/06
CPC分类号： G06Q10/0637 , G05B23/0283 , G05B2219/31337 , G06Q10/063
摘要： Maintenance actions, maintenance costs each differently corresponding to each maintenance action, a reference strategy and a fault model, are stored. If a system is maintained by each maintenance action at a first timing, if the system is degraded by the fault model from the first timing to a predetermined timing, and if the system is maintained by the reference strategy from a second timing after passing a predetermined period from the first timing to the predetermined timing, at least one search timing is set into a search period from the first timing to the second timing. A maintenance action value of each maintenance action is calculated at the search timing, based on an output and the maintenance cost of the system maintained from the first timing to the predetermined timing. An optimum maintenance action is selected from the maintenance actions, based on the maintenance action value of each maintenance action.
摘要翻译：存储维护动作，维护成本各不相同，每个维护动作，参考策略和故障模型。如果在第一定时通过每个维护动作维持系统，如果系统由故障模型从第一定时降级到预定定时，并且如果系统在通过预定的时间之后的第二定时由参考策略维护从第一定时到预定定时，至少一个搜索定时被设置到从第一定时到第二定时的搜索周期。基于从第一定时到预定定时保持的系统的输出和维护成本，在搜索时刻计算每个维护动作的维护动作值。根据维护动作的维护动作值，从维护动作中选择最佳维护动作。

5. 发明授权

US08306085B2 Nitride compound semiconductor element and method for manufacturing same 有权
标题翻译：氮化物半导体元件及其制造方法
公开(公告)号：US08306085B2
公开(公告)日：2012-11-06
申请号：US13234326
申请日：2011-09-16
申请人： Yoshiaki Hasegawa , Toshiya Yokogawa , Atsushi Yamada , Yoshiaki Matsuda
发明人： Yoshiaki Hasegawa , Toshiya Yokogawa , Atsushi Yamada , Yoshiaki Matsuda
IPC分类号： H01S5/10
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/78 , H01L33/0095 , H01S5/0202 , H01S5/22 , H01S5/2201 , Y10S148/028
摘要： The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure 40 supported by an upper face of the substrate. First, a wafer 1 to be split into individual substrates is provided. A plurality of semiconductor layers composing the multilayer structure 40 are grown on the wafer 1. By cleaving the wafer 1 and the semiconductor layers, a cleavage plane in the multilayer structure 40 is formed. In the present invention, a plurality of voids are arranged at positions in the multilayer structure at which a cleavage plane is to be formed. Thus, cleavage can be performed with a good yield.
摘要翻译：本发明涉及一种氮化物化合物半导体元件的制造方法，所述氮化物化合物半导体元件包括由所述基板的上表面支撑的基板和多层结构体40。首先，设置分割成各个基板的晶片1。构成多层结构40的多个半导体层在晶片1上生长。通过切割晶片1和半导体层，形成多层结构40中的解理面。在本发明中，在形成有解理面的多层结构体的位置配置多个空隙。因此，可以以良好的产率进行裂解。

6. 发明授权

US08194711B2 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US08194711B2
公开(公告)日：2012-06-05
申请号：US12470919
申请日：2009-05-22
申请人： Yoshiaki Hasegawa , Atsunori Mochida
发明人： Yoshiaki Hasegawa , Atsunori Mochida
IPC分类号： H01S5/00
CPC分类号： H01S5/0281 , B82Y20/00 , H01S5/0282 , H01S5/0287 , H01S5/1039 , H01S5/22 , H01S5/34333
摘要： A nitride semiconductor laser device includes a multilayer structure including a plurality of nitride semiconductor layers including a light emitting layer, the multilayer structure having cavity facets facing each other, and a plurality of protective films made of a dielectric material provided on one of the cavity facets. The protective films include a first protective film, a second protective film and a third protective film. The first protective film contacts the cavity facet and is made of aluminum nitride. The second protective film is provided on a surface opposite to the cavity facet of the first protective film and is made of a material different from that of the first protective film. The third protective film is provided on a surface opposite to the first protective film of the second protective film and is made of the same material as that of the first protective film.
摘要翻译：氮化物半导体激光器件包括多层结构，其包括多个氮化物半导体层，所述多个氮化物半导体层包括发光层，所述多层结构具有彼此面对的空腔面，以及多个由介电材料制成的保护膜，所述绝缘材料设置在所述腔面之一。保护膜包括第一保护膜，第二保护膜和第三保护膜。第一保护膜接触腔面并由氮化铝制成。第二保护膜设置在与第一保护膜的空腔面相对的表面上，并且由与第一保护膜不同的材料制成。第三保护膜设置在与第二保护膜的第一保护膜相反的表面上，并且由与第一保护膜相同的材料制成。

7. 发明申请

US20110215340A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20110215340A1
公开(公告)日：2011-09-08
申请号：US13109213
申请日：2011-05-17
申请人： Naomi Anzue , Gaku Sugahara , Yoshiaki Hasegawa , Akihiko Ishibashi , Toshiya Yokogawa
发明人： Naomi Anzue , Gaku Sugahara , Yoshiaki Hasegawa , Akihiko Ishibashi , Toshiya Yokogawa
IPC分类号： H01L33/02
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/32 , H01L33/38 , H01L33/40 , H01S5/0202 , H01S5/02272 , H01S5/028 , H01S5/0425 , H01S5/22 , H01S5/2201 , H01S5/3202 , H01S2304/04
摘要： A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.
摘要翻译：根据本发明的半导体发光器件包括：包含n型杂质并由碳化硅或氮化物半导体制成的GaN衬底1; 设置在GaN衬底1的主表面上的多层结构10; 形成在多层结构体10上的p电极17; 基本上覆盖GaN衬底1的整个后表面的第一n电极18; 以及设置在第一n电极18上以露出第一n电极18的周边的至少一部分的第二n电极20。

8. 发明授权

US07880192B2 Nitride semiconductor light emitting element and nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光元件和氮化物半导体发光器件
公开(公告)号：US07880192B2
公开(公告)日：2011-02-01
申请号：US12159786
申请日：2006-12-27
申请人： Yoshiaki Hasegawa , Gaku Sugahara , Toshiya Yokogawa
发明人： Yoshiaki Hasegawa , Gaku Sugahara , Toshiya Yokogawa
IPC分类号： H01L21/06
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0425 , H01S5/22
摘要： A nitride semiconductor device according to the present invention includes a n-GaN substrate 10 and a semiconductor multilayer structure arranged on the principal surface of the n-GaN substrate 10 and including a p-type region, an n-type region and an active layer between them. An SiO2 layer 30 with an opening and a p-side electrode, which makes contact with a portion of the p-type region of the semiconductor multilayer structure, are arranged on the upper surface of the semiconductor multilayer structure. An n-side electrode 36 is arranged on the back surface of the substrate 10. The p-side electrode includes a p-side contact electrode 32 that contacts with the portion of the p-type region and a p-side interconnect electrode 34 that covers the p-side contact electrode 2 and the SiO2 layer 30. Part of the p-side contact electrode 32 is exposed under the p-side interconnect electrode 34.
摘要翻译：根据本发明的氮化物半导体器件包括n-GaN衬底10和布置在n-GaN衬底10的主表面上并包括p型区，n型区和有源层的半导体多层结构它们之间。具有与半导体多层结构的p型区域的一部分接触的开口部和p侧电极的SiO2层30配置在半导体多层结构体的上表面。 n侧电极36配置在基板10的背面.p侧电极包括与p型区域的部分接触的p侧接触电极32和p侧配线电极34 覆盖p侧接触电极2和SiO 2层30. p侧接触电极32的一部分露出在p侧互连电极34的下方。

9. 发明申请

US20090022193A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20090022193A1
公开(公告)日：2009-01-22
申请号：US11908430
申请日：2006-03-09
申请人： Yoshiaki Hasegawa , Gaku Sugahara , Naomi Anzue , Akihiko Ishibashi , Toshiya Yokogawa
发明人： Yoshiaki Hasegawa , Gaku Sugahara , Naomi Anzue , Akihiko Ishibashi , Toshiya Yokogawa
IPC分类号： H01S5/343 , H01L33/00
CPC分类号： H01S5/32341 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L29/861 , H01L33/20 , H01L33/382 , H01L33/40 , H01S5/0207 , H01S5/0421 , H01S5/0425 , H01S2301/173
摘要： An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate 10; a semiconductor multilayer structure 100 formed on a principal face of the n-GaN substrate 10, the semiconductor multilayer structure 100 including a p-type region and an n-type region; a p-side electrode 32 which is in contact with a portion of the p-type region included in the semiconductor multilayer structure 100; and an n-side electrode 34 provided on the rear face of the n-GaN substrate 10. The rear face of the n-GaN substrate includes a nitrogen surface, such that a carbon concentration at an interface between the rear face and the n-side electrode 34 is adjusted to 5 atom % or less.
摘要翻译：根据本发明的氮化物半导体器件是氮化物半导体器件，其包括：n-GaN衬底10; 形成在n-GaN衬底10的主面上的半导体多层结构100，包括p型区和n型区的半导体层叠结构100; p侧电极32，其与包含在半导体多层结构体100中的p型区域的一部分接触; 以及设置在n-GaN衬底10的背面上的n侧电极34.n-GaN衬底的背面包括氮表面，使得在背面和n- 侧电极34被调整为5原子％以下。

10. 发明申请

US20080315231A1 LIGHT SOURCE, OPTICAL PICKUP, AND ELECTRONIC APPARATUS 有权
标题翻译：光源，光学拾取器和电子设备
公开(公告)号：US20080315231A1
公开(公告)日：2008-12-25
申请号：US12137894
申请日：2008-06-12
申请人： Isao Kidoguchi , Yasuo Kitaoka , Hiroyoshi Yajima , Keiji Ito , Akihiko Ishibashi , Yoshiaki Hasegawa , Kiminori Mizuuchi
发明人： Isao Kidoguchi , Yasuo Kitaoka , Hiroyoshi Yajima , Keiji Ito , Akihiko Ishibashi , Yoshiaki Hasegawa , Kiminori Mizuuchi
IPC分类号： H01L33/00
CPC分类号： H01S5/02204 , H01S5/02212 , H01S5/02296
摘要： A light source of the present invention includes: a semiconductor light emitting device which has a light emitting face and emits light from part of the light emitting face; a container which has a light transmitting window for transmitting the light and accommodates the semiconductor light emitting device; and a gettering portion for performing gettering of a material containing at least one of carbon and silicon. The gettering portion is positioned, in the container, in a region other than the part of the light emitting face of the semiconductor light emitting device.
摘要翻译：本发明的光源包括：具有发光面并从发光面的一部分发光的半导体发光器件; 容器，其具有用于传输光的透光窗并容纳半导体发光器件; 以及用于吸收含有至少一种碳和硅的材料的吸气部分。吸气部位于容器内，位于半导体发光元件的发光面以外的区域。

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