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1. 发明授权

US4672244A Josephson logic integrated circuit 失效
标题翻译：约瑟夫森逻辑集成电路
公开(公告)号：US4672244A
公开(公告)日：1987-06-09
申请号：US782185
申请日：1985-09-30
申请人： Yutaka Harada , Ushio Kawabe , Nobuo Kotera , Atsushi Asano
发明人： Yutaka Harada , Ushio Kawabe , Nobuo Kotera , Atsushi Asano
IPC分类号： H01L39/02 , H03K17/92 , H03K19/195
CPC分类号： H03K19/1952 , H03K17/92 , H03K19/195 , H03K19/1956 , Y10S505/858
摘要： A Josephson logic integrated circuit packaged on a single substrate, wherein a portion for delivering an output out of the integrated circuit is constructed of an A.C.-driven Josephson logic circuit, and a portion for driving the internal part of the integrated circuit is constructed of a D.C.-driven Josephson logic circuit.
摘要翻译：封装在单个基板上的约瑟夫森逻辑集成电路，其中用于将集成电路输出的输出部分由AC驱动的约瑟夫森逻辑电路构成，并且用于驱动集成电路的内部的部分由约瑟夫森直流驱动逻辑电路。

2. 发明授权

US4626701A Rectifying circuit comprising a superconductive device 失效
标题翻译：整流电路包括超导装置
公开(公告)号：US4626701A
公开(公告)日：1986-12-02
申请号：US697469
申请日：1985-02-01
申请人： Yutaka Harada , Kunio Yamashita , Nobuo Kotera , Ushio Kawabe
发明人： Yutaka Harada , Kunio Yamashita , Nobuo Kotera , Ushio Kawabe
IPC分类号： H02M7/21 , H02M7/04 , H02M7/06 , H02M11/00 , H03K17/92 , H02M7/02
CPC分类号： H02M11/00 , H02M7/04 , Y10S505/861
摘要： A rectifying circuit includes a superconductive device and a circuit which controls a magnetic field to be applied to the superconductive device in response to the phase of an A.C. signal applied to the superconductive device, the state of the superconductive device being alternately and repeatedly changed-over between a superconductive state and a nonsuperconductive state by the magnetic field so as to rectify the A.C. signal.
摘要翻译：整流电路包括超导装置和电路，其响应于施加到超导装置的AC信号的相位而控制施加到超导装置的磁场，超导装置的状态被交替地和重复地切换通过磁场处于超导状态和非超导状态之间，以便对AC信号进行整流。

3. 发明授权

US5442196A Superconducting device 失效
标题翻译：超导装置
公开(公告)号：US5442196A
公开(公告)日：1995-08-15
申请号：US201410
申请日：1994-02-24
申请人： Toshikazu Nishino , Mutsuko Miyake , Ushio Kawabe , Yutaka Harada , Masaaki Aoki , Mikio Hirano
发明人： Toshikazu Nishino , Mutsuko Miyake , Ushio Kawabe , Yutaka Harada , Masaaki Aoki , Mikio Hirano
IPC分类号： H01L21/82 , H01L39/22
CPC分类号： H01L39/228 , H01L21/82
摘要： A pair of superconducting electrodes are so formed as to interpose a semiconductor therebetween, and a control electrode is formed on the semiconductor through an insulator film so as to control the superconductive weak coupling state in the semiconductor between the superconducting electrodes. The distance between the superconducting electrodes is determined by the thickness of the superconductor interposed between the two electrodes, whereby the interelectrode distance is settled with a high precision to improve the uniformity of the device characteristic.And in an arrangement where two superconducting electrodes are formed on a semiconductor layer and the superconductive weak coupling state between such two electrodes is controlled by a third electrode, the gain is increadable by furnishing a varied impurity distribution in the semiconductor layer.
摘要翻译：一对超导电极形成为在其间插入半导体，并且通过绝缘膜在半导体上形成控制电极，以便控制超导电极之间的半导体中的超导弱耦合状态。超导电极之间的距离由插入在两个电极之间的超导体的厚度决定，从而以高精度稳定电极间距离，以提高器件特性的均匀性。并且在半导体层上形成两个超导电极并且在这两个电极之间的超导弱耦合状态由第三电极控制的布置中，通过在半导体层中提供不同的杂质分布来增加增益。

4. 发明授权

US5126801A Superconducting device 失效
标题翻译：超导装置
公开(公告)号：US5126801A
公开(公告)日：1992-06-30
申请号：US412201
申请日：1989-09-25
申请人： Toshikazu Nishino , Mutsuko Miyake , Ushio Kawabe , Yutaka Harada , Masaaki Aoki , Mikio Hirano
发明人： Toshikazu Nishino , Mutsuko Miyake , Ushio Kawabe , Yutaka Harada , Masaaki Aoki , Mikio Hirano
IPC分类号： H01L21/82 , H01L39/22
CPC分类号： H01L39/228 , H01L21/82
摘要： A pair of superconducting electrodes are so formed as to interpose a semiconductor therebetween, and a control electrode is formed on the semiconductor through an insulator film so as to control the superconductive weak coupling state in the semiconductor between the superconducting electrodes. The distance between the superconducting electrodes is determined by the thickness of the superconductor interposed between the two electrodes, whereby the interelectrode distance is settled with a high precision to improve the uniformity of the device characteristic. In an arrangement where two superconducting electrodes are formed on a semiconductor layer and the superconductive weak coupling state between such two electrodes is controlled by a third electrode, the gain is incredible by furnishing a varied impurity distribution in the semiconductor layer.
摘要翻译：一对超导电极形成为在其间插入半导体，并且通过绝缘膜在半导体上形成控制电极，以便控制超导电极之间的半导体中的超导弱耦合状态。超导电极之间的距离由插入在两个电极之间的超导体的厚度决定，从而以高精度稳定电极间距离，以提高器件特性的均匀性。在半导体层上形成两个超导电极并且在这两个电极之间的超导弱耦合状态由第三电极控制的布置中，通过在半导体层中提供不同的杂质分布，增益是令人难以置信的。

5. 发明授权

US5311037A Superconducting device 失效
标题翻译：超导装置
公开(公告)号：US5311037A
公开(公告)日：1994-05-10
申请号：US925122
申请日：1992-08-06
申请人： Yutaka Harada , Shinichiro Yano , Mutsuko Miyake , Ushio Kawabe , Toshikazu Nishino
发明人： Yutaka Harada , Shinichiro Yano , Mutsuko Miyake , Ushio Kawabe , Toshikazu Nishino
IPC分类号： H01L39/22 , H01L45/00
CPC分类号： H01L39/228
摘要： Superconducting electrodes are formed on a semiconductor which serves as a channel. A control electrode is disposed through an insulator film or a p-n junction on the side of the semiconductor which is opposite to the semiconductor side on which the superconducting electrode is formed. A superconducting current flows between the superconducting electrode across the semiconductor is controlled by an electric signal which is applied to the control electrode, thereby enhancing the current gain.
摘要翻译：在用作沟道的半导体上形成超导电极。控制电极通过与形成有超导电极的半导体侧相反的半导体侧的绝缘膜或p-n结配置。跨过半导体的超导电极之间的超导电流由施加到控制电极的电信号控制，从而增强电流增益。

6. 发明授权

US4888629A Superconducting device 失效
标题翻译：超导装置
公开(公告)号：US4888629A
公开(公告)日：1989-12-19
申请号：US201332
申请日：1988-05-31
申请人： Yutaka Harada , Shinichiro Yano , Mutsuko Miyake , Ushio Kawabe , Toshikazu Nishino
发明人： Yutaka Harada , Shinichiro Yano , Mutsuko Miyake , Ushio Kawabe , Toshikazu Nishino
IPC分类号： H01L39/22
CPC分类号： H01L39/228
摘要： Superconducting electrodes are formed on a semiconductor which serves as a channel. A control electrode is disposed through an insulator film or a p-n junction on the side of the semiconductor which is opposite to the semiconductor side on which the superconducting electrode is formed. A superconducting current which flows between the superconducting electrodes across the semiconductor is controlled by an electric signal which is applied to the control electrode, thereby enhancing the current gain.
摘要翻译：在用作沟道的半导体上形成超导电极。控制电极通过与形成有超导电极的半导体侧相反的半导体侧的绝缘膜或p-n结配置。在跨越半导体的超导电极之间流动的超导电流由施加到控制电极的电信号控制，从而增强电流增益。

7. 发明授权

US4884111A Superconducting device 失效
标题翻译：超导装置
公开(公告)号：US4884111A
公开(公告)日：1989-11-28
申请号：US073408
申请日：1987-07-13
申请人： Toshikazu Nishino , Mutsuko Miyake , Ushio Kawabe , Yutaka Harada , Masaaki Aoki , Mikio Hirano
发明人： Toshikazu Nishino , Mutsuko Miyake , Ushio Kawabe , Yutaka Harada , Masaaki Aoki , Mikio Hirano
IPC分类号： H01L21/82 , H01L39/22
CPC分类号： H01L39/228 , H01L21/82
摘要： A pair of superconducting electrodes are so formed as to interpose a smeiconductor therebetween, and a control electrode is formed on the seimiconductor through an insulator film so as to control the superconductive weak coupling state in the semiconductor between the superconducting electrodes. The distance between the superconducting electrodes is determined by the thickness of the superconductor interposed between the two electrodes, whereby the interelectrode distance is settled with a high precision to improve the uniformity of the device characteristic.And in an arrangement where two superconducting electrodes are formed on a semiconductor layer and the superconductive weak coupling state between such two electrodes is controlled by a third electrode, the gain is increadable by furnishing a varied impurity distribution in the semiconductor layer.
摘要翻译：一对超导电极形成为在其间插入半导体，并且通过绝缘膜在半导体上形成控制电极，以便控制超导电极之间的半导体中的超导弱耦合状态。超导电极之间的距离由插入在两个电极之间的超导体的厚度决定，从而以高精度稳定电极间距离，以提高器件特性的均匀性。并且在半导体层上形成两个超导电极并且在这两个电极之间的超导弱耦合状态由第三电极控制的布置中，通过在半导体层中提供不同的杂质分布来增加增益。

8. 发明授权

US4785426A Superconducting switching circuit, memory cell and memory circuit, with resonance damping resistors 失效
标题翻译：超导开关电路，存储单元和存储电路，具有谐振阻尼电阻
公开(公告)号：US4785426A
公开(公告)日：1988-11-15
申请号：US777585
申请日：1985-09-19
申请人： Yutaka Harada , Ushio Kawabe , Eiichi Goto , Nobuo Miyamoto
发明人： Yutaka Harada , Ushio Kawabe , Eiichi Goto , Nobuo Miyamoto
IPC分类号： G11C11/44 , H03K3/38
CPC分类号： H03K3/38 , G11C11/44
摘要： A superconducting switching circuit comprises a DCFP circuit composed of two Josephson junction elements constituting two current paths, respectively. Each of the current paths includes a resistor for suppressing resonance. A memory cell constituted by the DCFP circuit includes three Josephson junction elements constituting three current paths, respectively. Each of the current paths includes a resistor for suppressing resonance. A memory circuit comprises a number of memory cells of such a structure.
摘要翻译：超导切换电路包括分别由构成两个电流路径的两个约瑟夫逊结元件组成的DCFP电路。每个电流路径包括用于抑制谐振的电阻器。由DCFP电路构成的存储单元分别包括构成三个电流路径的三个约瑟夫逊结元件。每个电流路径包括用于抑制谐振的电阻器。存储电路包括多个具有这种结构的存储单元。

9. 发明授权

US5160983A Superconducting device 失效
标题翻译：超导装置
公开(公告)号：US5160983A
公开(公告)日：1992-11-03
申请号：US439809
申请日：1989-11-21
申请人： Yutaka Harada , Shinichiro Yano , Mutsuko Miyake , Ushio Kawabe , Toshikazu Nishino
发明人： Yutaka Harada , Shinichiro Yano , Mutsuko Miyake , Ushio Kawabe , Toshikazu Nishino
IPC分类号： H01L39/22
CPC分类号： H01L39/228
摘要： Superconducting electrodes are formed on a semiconductor which serves as a channel. A control electrode is disposed through an insulator film or a p-n junction on the side of the semiconductor which is opposite to the semiconductor side on which the superconducting electrode is formed. A superconducting current which flows between the superconducting electrodes across the semiconductor is controlled by an electric signal which is applied to the control electrode, thereby enhancing the current gain.
摘要翻译：在用作沟道的半导体上形成超导电极。控制电极通过与形成有超导电极的半导体侧相反的半导体侧的绝缘膜或p-n结配置。在跨越半导体的超导电极之间流动的超导电流由施加到控制电极的电信号控制，从而增强电流增益。

10. 发明授权

US5311036A Superconducting device 失效
标题翻译：超导装置
公开(公告)号：US5311036A
公开(公告)日：1994-05-10
申请号：US875431
申请日：1992-04-29
申请人： Toshikazu Nishino , Mutsuko Miyake , Ushio Kawabe , Yutaka Harada , Masaaki Aoki , Mikio Hirano
发明人： Toshikazu Nishino , Mutsuko Miyake , Ushio Kawabe , Yutaka Harada , Masaaki Aoki , Mikio Hirano
IPC分类号： H01L21/82 , H01L39/22
CPC分类号： H01L39/228 , H01L21/82
摘要： A pair of superconducting electrodes are so formed as to interpose a semiconductor therebetween, and a control electrode is formed on the semiconductor through an insulator film so as to control the superconductive weak coupling state in the semiconductor between the superconducting electrodes. The distance between the superconducting electrodes is determined by the thickness of the superconductor interposed between the two electrodes, whereby the interelectrode distance is settled with a high precision to improve the uniformity of the device characteristic.And in an arrangement where two superconducting electrodes are formed on a semiconductor layer and the superconductive weak coupling state between such two electrodes is controlled by a third electrode, the gain is increadable by furnishing a varied impurity distribution in the semiconductor layer.
摘要翻译：一对超导电极形成为在其间插入半导体，并且通过绝缘膜在半导体上形成控制电极，以便控制超导电极之间的半导体中的超导弱耦合状态。超导电极之间的距离由插入在两个电极之间的超导体的厚度决定，从而以高精度稳定电极间距离，以提高器件特性的均匀性。并且在半导体层上形成两个超导电极并且在这两个电极之间的超导弱耦合状态由第三电极控制的布置中，通过在半导体层中提供不同的杂质分布来增加增益。

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