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1. 发明申请

US20080153376A1 PROCESSING METHOD AND PROCESSING DEVICE OF CONDITIONING ELECTRON GUN 有权
标题翻译：调节电子枪的处理方法和处理装置
公开(公告)号：US20080153376A1
公开(公告)日：2008-06-26
申请号：US11860178
申请日：2007-09-24
申请人： Nobuo MIYAMOTO
发明人： Nobuo MIYAMOTO
IPC分类号： H01J9/50
CPC分类号： H01J37/063 , B82Y10/00 , B82Y40/00 , H01J9/445 , H01J37/3174 , H01J2237/022 , H01J2237/30411
摘要： Discharge factors existing on a surface of an electrode or an insulator forming an electron gun are removed efficiently and effectively, thus simply and easily enhancing the withstand voltage property of the electron gun. A conditioning processing device of an electron gun is provided with a voltage supply section, a voltage adjusting section for adjusting the output voltage of the voltage supply section, and a current detection section for detecting a leakage current flowing between the electrodes of the electron gun. Further, there are attached a vacuum exhaust section for adjusting the inside of the electron gun in a reduced pressure condition and a pressure detection section. Further, it is arranged that a personal computer (PC), for example, performs data processing based on the leakage current detected by the current detection section or comparison with a reference value thereof to control the voltage, which is applied between the electrodes from the voltage supply section via a connection section, via the voltage adjustment section.
摘要翻译：有效且有效地除去存在于形成电子枪的电极或绝缘体的表面上的放电系数，从而简单且容易地提高电子枪的耐电压性。电子枪的调理处理装置设置有电压供给部，用于调整电压供给部的输出电压的电压调整部，以及用于检测在电子枪的电极之间流动的漏电流的电流检测部。此外，附着有用于在减压条件下调节电子枪内部的真空排气部和压力检测部。此外，例如，个人计算机（PC）例如基于由当前检测部分检测到的泄漏电流进行数据处理或与其参考值进行比较以控制施加在电极之间的电压电压供应部分经由连接部分，经由电压调节部分。

2. 发明授权

US06476393B1 Surface state monitoring method and apparatus 失效
标题翻译：表面状态监测方法及装置
公开(公告)号：US06476393B1
公开(公告)日：2002-11-05
申请号：US09321505
申请日：1999-05-27
申请人： Haruo Yoshida , Michiaki Endo , Michio Niwano , Nobuo Miyamoto , Yasuhiro Maeda
发明人： Haruo Yoshida , Michiaki Endo , Michio Niwano , Nobuo Miyamoto , Yasuhiro Maeda
IPC分类号： G01N2100
CPC分类号： G01N21/94 , G01J3/02 , G01J3/0216 , G01J3/108 , G01J3/45 , G01N21/552 , G01N21/9501 , G01N21/9503 , G01N21/9505 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A surface state monitoring method and apparatus for performing in-situ monitoring of surface states of semiconductor substrates. The apparatus comprises condensing means 30 for condensing infrared radiation to an outer peripheral part of the substrate-to-be-monitored; control means 80 for controlling an incident angle of the infrared radiation condensed by the condensing means 30; condensing means 40 for condensing the infrared radiation which has undergone multiple reflection in the substrate-to-be-monitored; detecting means 50 for detecting the infrared radiation condensed by the infrared radiation condensing means 40, and analyzing means 60 for analyzing the detected infrared radiation detected and measuring contaminants staying on the surfaces of the substrate-to-be-monitored.
摘要翻译：一种表面状态监测方法和装置，用于对半导体衬底的表面状态进行原位监测。该装置包括用于将红外辐射聚焦到待监测基板的外周部分的冷凝装置30; 控制装置80，用于控制由冷凝装置30冷凝的红外辐射的入射角; 冷凝装置40，用于冷凝在待监测的基板中经历多次反射的红外辐射; 用于检测由红外辐射聚集装置40聚集的红外辐射的检测装置50，以及用于分析检测到的检测到的红外辐射并测量留在待监测基板的表面上的污染物的分析装置60。

3. 发明授权

US5793638A Work instruction system and conveyance control system in production line 失效
标题翻译：生产线上的工作指导系统和输送控制系统
公开(公告)号：US5793638A
公开(公告)日：1998-08-11
申请号：US620756
申请日：1996-03-18
申请人： Yoshihiro Yao , Nobuo Miyamoto , Hideyuki Wakai
发明人： Yoshihiro Yao , Nobuo Miyamoto , Hideyuki Wakai
IPC分类号： B23P21/00 , B23Q41/08 , G05B19/418 , G06F17/00
CPC分类号： B23P21/004 , B23Q41/08 , G05B19/41865 , G05B19/4189 , B23P2700/50 , Y02P90/20 , Y02P90/28
摘要： An object of this invention is to provide efficient operations of a production line for producing finished products by performing working in which a variety of parts are selectively combined with one another during a plurality of processes. A semi-finished product produced in processes (1 and 2) is assigned to an article number; parts serving as raw materials, a supplier of the semi-finished product, or a destination of the semi-finished product or part are specified; and these specified data are distributed and transmitted from a higher level system (4) to respective control systems (5, 6, 7 and 8) as planned data to be executed and planned data to be received. The respective systems display the contents of the data thus transmitted on display sections (52, 62, 72 and 82), issue work instructions on the basis of the contents of the data, and output request instructions to the systems (6, 7 and 8) of the supplier side on the basis of the displayed contents or output supply instructions to the destination systems (5, 6 and 7). The system which has received the request instruction outputs a conveyance instruction to the conveyance control system (9) to convey the raw materials to the system which has output the request instruction, while the system which has received the supply instruction outputs a conveyance instruction to the conveyance control system (9) to convey the raw material from the system which has output the supply instruction.
摘要翻译：本发明的一个目的是提供一种用于生产成品的生产线的有效操作，通过执行在多个工艺中各种部件彼此选择性地组合的工作。将过程（1和2）中生产的半成品分配给商品编号; 指定作为原材料的部件，半成品供应商或半成品或部件的目的地; 并且这些指定的数据被分配并从较高级系统（4）发送到相应的控制系统（5,6,7和8），作为待执行的计划数据和待接收的计划数据。相应的系统显示在显示部分（52,62,72和82）上发送的数据的内容，基于数据的内容发出工作指令，并向系统（6,7和8）输出请求指令）根据显示的内容或输出供给指示到目的地系统（5,6和7）。已经接收到请求指令的系统向输送控制系统（9）输出输送指令，以将原材料输送到输出请求指令的系统，而接收到供给指令的系统向输送控制系统（9）从输出供应指示的系统输送原料。

4. 发明授权

US4866373A Superconducting current detecting circuit employing DC flux parametron circuit 失效
标题翻译：采用直流通量参数电路的超导电流检测电路
公开(公告)号：US4866373A
公开(公告)日：1989-09-12
申请号：US291338
申请日：1988-12-28
申请人： Yutaka Harada , Eiichi Goto , Ushio Kawabe , Nobuo Miyamoto , Hideaki Nakane , Mutsuko Hatano
发明人： Yutaka Harada , Eiichi Goto , Ushio Kawabe , Nobuo Miyamoto , Hideaki Nakane , Mutsuko Hatano
IPC分类号： G01R17/06 , G01R19/00 , G01R19/15 , G01R19/257
CPC分类号： G01R19/257 , G01R17/06 , G01R19/0092 , G01R19/15 , Y10S505/827 , Y10S505/845
摘要： A superconducting current detecting circuit which comprises a reference current generation circuit for generating a reference current and a DC flux parametron circuit for comparing an input current to be detected with the reference current to thereby produce pulses in synchronism with an input excitation signal, the number of the pulses being varied in accordance with a difference between the input current and the reference current, the pulses having positive or negative values depending on the polarity of the difference, the reference current generation circuit having means for increasing or decreasing the reference current by a quantity corresponding to the number of the pulses in response to the polarity of the pulses so that reference current generation circuit produces the reference current which agrees with the input current.
摘要翻译：一种超导电流检测电路，包括用于产生参考电流的参考电流产生电路和用于将待检测的输入电流与参考电流进行比较的DC通量参数电路，从而产生与输入激励信号同步的脉冲，所述脉冲根据所述输入电流和所述参考电流之间的差异而变化，所述脉冲具有取决于所述差的极性的正值或负值，所述参考电流产生电路具有用于将所述参考电流增加或减少量的装置对应于响应于脉冲极性的脉冲数，使得参考电流产生电路产生与输入电流一致的参考电流。

5. 发明授权

US6005660A Detection and analysis of a fine foreign matter on a sample 失效
标题翻译：检测和分析样品上的细小杂质
公开(公告)号：US6005660A
公开(公告)日：1999-12-21
申请号：US86311
申请日：1998-05-27
申请人： Haruo Yoshida , Nobuo Miyamoto
发明人： Haruo Yoshida , Nobuo Miyamoto
IPC分类号： G01N23/225 , B23K26/03 , G01N21/88 , G01N21/94 , G01N21/956 , H01L21/66 , B23K26/00 , G01N21/00
CPC分类号： B08B7/0042 , B23K26/032 , B23K26/1224 , B23K26/123 , H01L21/67288
摘要： A foreign matter processing apparatus is disclosed for detecting a foreign matter sticking to the surface of a sample such as a circuit board. In the sample processing apparatus of the present invention, a fine foreign matter sticking to a surface of a sample is detected, and the composition of the detected foreign matter is analyzed. Then, it is determined based on a result of the analysis and various data registered in advance whether or not it is required to remove the foreign matter, and the foreign matter, whose removal has been determined to be required, is removed from the surface of the sample. Accordingly, detection, analysis and removal of a foreign matter on the surface of a sample can be performed by a single apparatus.
摘要翻译：公开了一种异物处理装置，用于检测粘附在诸如电路板的样品表面的异物。在本发明的样品处理装置中，检测粘附到样品表面的微细异物，并分析检测到的异物的组成。然后，基于分析结果和预先登记的各种数据来确定是否需要除去异物，并且将其去除已被确定为需要的异物从表面上移除例子。因此，可以通过单个装置来进行样品表面的异物的检测，分析和除去。

6. 发明授权

US4749515A Liquid detergent composition 失效
标题翻译：液体洗涤剂组合物
公开(公告)号：US4749515A
公开(公告)日：1988-06-07
申请号：US927454
申请日：1986-11-06
申请人： Nobuo Miyamoto , Takashi Ikeuchi , Zentaro Shinjo
发明人： Nobuo Miyamoto , Takashi Ikeuchi , Zentaro Shinjo
IPC分类号： A61K8/00 , A61K8/44 , A61K8/46 , A61K8/64 , A61Q5/02 , C11D1/10 , C11D1/12 , C11D1/32 , C11D1/37 , C11D3/20 , C11D3/38 , C11D3/60 , C11D3/30 , C11D3/34
CPC分类号： C11D1/32 , A61K8/466 , A61K8/64 , A61Q5/02 , C11D1/123
摘要： A liquid detergent composition contains: (a) one or more sulfosuccinic acid monoesters represented by the general formula (I) or (II): ##STR1## wherein each of M.sub.1 to M.sub.4 is H, NH.sub.4, an alkali metal or a hydroxyalkyl-substituted ammonium. R.sub.1 and R.sub.2 are each an alkyl or hydroxyalkyl group having 8 to 20 carbon atoms on the average, R.sub.3 is H or CH.sub.3, AO is an oxyalkylene group having 2 or 3 carbon atoms, and n represents an integer of 0 to 20; and (b) one or more acylated compounds selected from the group consisting of acylated peptides which are obtained by hydrolyzing natural proteins so that the resultant peptides may have average molecular weights in the range of 200 to 8,000 and acylating the peptides with acylating agents having 6 to 24 carbon atoms, salts of the acylated peptides, N-acyl amino acids comprising 6 to 24 carbon atoms in the acyl group, and salts of the N-acyl amino acids.
摘要翻译：液体洗涤剂组合物含有：（a）一种或多种由通式（I）或（II）表示的磺基琥珀酸单酯：其中M1至M4各自为H， NH 4，碱金属或羟烷基取代的铵。 R 1和R 2各自为平均碳原子数为8〜20的烷基或羟烷基，R 3为H或CH 3，AO为碳原子数2〜3的氧化烯基，n表示0〜20的整数。和（b）一种或多种选自酰基化肽的酰化化合物，其通过水解天然蛋白质获得，使得所得肽的平均分子量可以在200-8,000范围内，并用具有6个酰化剂的酰化剂酰化该肽至24个碳原子，酰化肽的盐，酰基中含有6至24个碳原子的N-酰基氨基酸和N-酰基氨基酸的盐。

7. 发明授权

US4177298A Method for producing an InSb thin film element 失效
标题翻译：用于制造InSb薄膜元件的方法
公开(公告)号：US4177298A
公开(公告)日：1979-12-04
申请号：US888465
申请日：1978-03-20
申请人： Junji Shigeta , Tetsu Oi , Nobuo Kotera , Muneyasu Nakashima , Nobuo Miyamoto
发明人： Junji Shigeta , Tetsu Oi , Nobuo Kotera , Muneyasu Nakashima , Nobuo Miyamoto
IPC分类号： C30B13/10 , H01L21/225 , H01L43/10 , H01L43/12 , H01L21/22 , H01L21/203 , H01L21/205
CPC分类号： H01L43/10 , C30B13/10 , H01L21/2258 , H01L43/14 , Y10S438/918 , Y10S438/971
摘要： A method for producing an InSb thin film element comprising the steps of forming an InSb polycrystalline thin film on a substrate, melting and recrystallizing the InSb polycrystalline thin film at a temperature above the melting point of InSb, and disposing a diffusion source which contains at least one element selected from the group consisting of Cu, Au, Ag, Zn, Na, K, Cd, B, Li, Ca, Fe, Mg, Ba, Al and Pb and then heating the InSb thin film so as to dope it with the desired element or elements in a range in which the total quantity does not exceed a concentration of 1.times.10.sup.18 cm.sup.-3. The InSb thin film element produced by this method has a very little current noise and a high signal-to-noise ratio. Further more, simultaneous doping of the said predetermined element or said elements and sb is more effective to reduce the current noise.
摘要翻译：一种InSb薄膜元件的制造方法，其特征在于，在基板上形成InSb多晶薄膜，在InSb熔点以上的温度下熔融并重结晶InSb多晶薄膜，并设置至少含有选自Cu，Au，Ag，Zn，Na，K，Cd，B，Li，Ca，Fe，Mg，Ba，Al和Pb中的一种元素，然后加热InSb薄膜以将其掺杂在总量不超过1×10 18 cm -3的浓度的范围内的期望元素。通过该方法制造的InSb薄膜元件具有非常小的电流噪声和高的信噪比。此外，同时掺杂所述预定元件或所述元件和sb更有效地降低电流噪声。

8. 发明授权

US4128681A Method for producing an InSb thin film element 失效
标题翻译：用于制造InSb薄膜元件的方法
公开(公告)号：US4128681A
公开(公告)日：1978-12-05
申请号：US735139
申请日：1976-10-26
申请人： Nobuo Kotera , Nobuo Miyamoto
发明人： Nobuo Kotera , Nobuo Miyamoto
IPC分类号： C23C14/06 , H01L21/20 , H01L21/324 , H01L29/20 , H01L29/786 , H01L43/12 , B32B15/20
CPC分类号： H01L29/20 , H01L21/02381 , H01L21/0242 , H01L21/02488 , H01L21/02549 , H01L21/02667 , H01L21/3245 , H01L29/78681 , Y10S438/902 , Y10S438/967 , Y10T428/24331 , Y10T428/2495 , Y10T428/24967 , Y10T428/265
摘要： A method for producing an InSb thin film element comprising the steps of (i) preparing a substrate at least one surface of which is made of alumina or an inorganic insulating material containing at least 12 mol % of alumina, and forming an InSb thin film of a thickness of at most 0.2 .mu.m on the surface of said substrate, (ii) depositing on said InSb thin film a film which is made of an inorganic insulating material containing at least 12 mol % of alumina, (iii) heating said InSb thin film above the melting point of InSb, and (iv) cooling said InSb thin film and recrystallizing InSb. The InSb thin film element thus produced has the InSb thin film whose thickness is at most 0.2 .mu.m, whose surface is flat and which has good electrical characteristics.
摘要翻译：一种制造InSb薄膜元件的方法，包括以下步骤：（i）制备其至少一个表面由氧化铝制成的基材或含有至少12mol％氧化铝的无机绝缘材料，并形成InSb薄膜（ii）在所述InSb薄膜上沉积由含有至少12mol％的氧化铝的无机绝缘材料制成的膜，（iii）加热所述InSb薄膜的薄膜薄膜高于InSb的熔点，（iv）冷却所述InSb薄膜并重结晶InSb。由此制造的InSb薄膜元件的厚度为0.2μm以下的InSb薄膜，其表面平坦且具有良好的电气特性。

9. 发明授权

US06508990B1 Substrate treating method and apparatus 失效
标题翻译：基板处理方法及装置
公开(公告)号：US06508990B1
公开(公告)日：2003-01-21
申请号：US09354054
申请日：1999-07-15
申请人： Haruo Yoshida , Michiaki Endo , Michio Niwano , Nobuo Miyamoto , Yasuhiro Maeda
发明人： Haruo Yoshida , Michiaki Endo , Michio Niwano , Nobuo Miyamoto , Yasuhiro Maeda
IPC分类号： B01J1908
CPC分类号： H01J37/32935 , B08B7/0035 , C23C14/02 , C23C14/547 , C23C16/02 , C23C16/52 , G01N21/9501 , G01N21/9503 , G01N21/9505 , H01L21/67253 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： A substrate treating method and apparatus which can perform in-situ monitoring of surface state of a semiconductor substrate. The substrate treating apparatus comprises substrate treating means for subjecting the substrate to a required treatment, means for condensing infrared radiation emitted by an infrared radiation source onto an outer peripheral part of the substrate and introducing the infrared radiation into the substrate, means for detecting the infrared radiation which has undergone multiple reflection inside the substrate and exited from the substrate, means for analyzing the detected infrared radiation, means for monitoring the surface state of the substrate, and control means for controlling the substrate treating means, based on the monitored surface state of the substrate.
摘要翻译：一种能够对半导体衬底的表面状态进行原位监测的衬底处理方法和装置。基板处理装置包括用于对基板进行所需处理的基板处理装置，用于将由红外线辐射源发射的红外线辐射聚集到基板的外周部分并将红外辐射引入基板的装置，用于检测红外线在基板内经历多次反射并从基板排出的辐射，用于分析检测到的红外辐射的装置，用于监测基板的表面状态的装置，以及用于控制基板处理装置的控制装置，基于所监视的表面状态底物。

10. 发明授权

US4785426A Superconducting switching circuit, memory cell and memory circuit, with resonance damping resistors 失效
标题翻译：超导开关电路，存储单元和存储电路，具有谐振阻尼电阻
公开(公告)号：US4785426A
公开(公告)日：1988-11-15
申请号：US777585
申请日：1985-09-19
申请人： Yutaka Harada , Ushio Kawabe , Eiichi Goto , Nobuo Miyamoto
发明人： Yutaka Harada , Ushio Kawabe , Eiichi Goto , Nobuo Miyamoto
IPC分类号： G11C11/44 , H03K3/38
CPC分类号： H03K3/38 , G11C11/44
摘要： A superconducting switching circuit comprises a DCFP circuit composed of two Josephson junction elements constituting two current paths, respectively. Each of the current paths includes a resistor for suppressing resonance. A memory cell constituted by the DCFP circuit includes three Josephson junction elements constituting three current paths, respectively. Each of the current paths includes a resistor for suppressing resonance. A memory circuit comprises a number of memory cells of such a structure.
摘要翻译：超导切换电路包括分别由构成两个电流路径的两个约瑟夫逊结元件组成的DCFP电路。每个电流路径包括用于抑制谐振的电阻器。由DCFP电路构成的存储单元分别包括构成三个电流路径的三个约瑟夫逊结元件。每个电流路径包括用于抑制谐振的电阻器。存储电路包括多个具有这种结构的存储单元。

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