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1. 发明授权

US07045818B2 Semiconductor device and method of manufacturing the same comprising thin film containing low concentration of hydrogen 有权
标题翻译：半导体装置及其制造方法包括含有低浓度氢的薄膜
公开(公告)号：US07045818B2
公开(公告)日：2006-05-16
申请号：US10818425
申请日：2004-04-05
申请人： Yushi Jinno , Shiro Nakanishi , Kyoko Hirai , Tsutomu Yamada , Yoshihiro Morimoto , Kiyoshi Yoneda
发明人： Yushi Jinno , Shiro Nakanishi , Kyoko Hirai , Tsutomu Yamada , Yoshihiro Morimoto , Kiyoshi Yoneda
IPC分类号： H01L31/20 , H01L29/04 , H01L21/00
CPC分类号： H01L27/127 , H01L27/1214 , H01L29/66765 , H01L29/78621
摘要： In a fabrication process of a semiconductor device for use in a TFT liquid crystal display system, before the start of crystallizing amorphous silicon (a-Si), dehydrogenation annealing is carried out to not only decrease the density of hydrogen in the p-Si film (13) to 5×1020 atoms/cm3 at most but also to prevent crystallization of the a-Si film (13) being obstructed due to possible excessive hydrogen remaining in the film. With the p-Si film (13) covered with an interlayer insulation film (15) in the form of a plasma nitride film, annealing is then carried out in nitrogen atmosphere at a temperature of 350° C. to 400° C. for one to three hours, more preferably 400° C. for two hours. The result is that hydrogen atoms in the p-Si film (13) efficiently terminate dangling bonds of the film and hence do not become excessive, thus improving the electrical characteristics of the semiconductor device.
摘要翻译：在用于TFT液晶显示系统的半导体器件的制造工艺中，在开始结晶非晶硅（a-Si）之前，进行脱氢退火以不仅降低p-Si膜中的氢的密度（13）至5×10 20原子/ cm 3以上，同时也防止由于可能存在过剩氢气而导致的阻塞a-Si膜（13）的结晶电影。在用等离子体氮化物膜形式的层间绝缘膜（15）覆盖的p-Si膜（13）上，然后在氮气气氛中在350℃至400℃的温度下进行退火，一个至3小时，更优选400℃2小时。结果是，p-Si膜（13）中的氢原子有效地终止膜的悬挂键，因此不会变得过大，从而改善了半导体器件的电特性。

2. 发明授权

US06750086B2 Semiconductor device having a semiconductor thin film containing low concentration of unbound hydrogen atoms and method of manufacturing the same 失效
标题翻译：具有含有低浓度未结合氢原子的半导体薄膜的半导体器件及其制造方法
公开(公告)号：US06750086B2
公开(公告)日：2004-06-15
申请号：US09049353
申请日：1998-03-27
申请人： Yushi Jinno , Shiro Nakanishi , Kyoko Hirai , Tsutomu Yamada , Yoshihiro Morimoto , Kiyoshi Yoneda
发明人： Yushi Jinno , Shiro Nakanishi , Kyoko Hirai , Tsutomu Yamada , Yoshihiro Morimoto , Kiyoshi Yoneda
IPC分类号： H01L2100
CPC分类号： H01L27/127 , H01L27/1214 , H01L29/66765 , H01L29/78621
摘要： In a fabrication process of a semiconductor device for use in a TFT liquid crystal display system, before the start of crystallizing amorphous silicon (a-Si), dehydrogenation annealing is carried out to not only decrease the density of hydrogen in the p-Si film (13) to 5×1020 atoms/cm3 at most but also to prevent crystallization of the a-Si film (13) being obstructed due to possible excessive hydrogen remaining in the film. With the p-Si film (13) covered with an interlayer insulation film (15) in the form of a plasma nitride film, annealing is then carried out in nitrogen atmosphere at a temperature of 350° C. to 400° C. for one to three hours, more preferably 400° C. for two hours. The result is that hydrogen atoms in the p-Si film (13) efficiently terminate dangling bonds of the film and hence do not become excessive, thus improving the electrical characteristics of the semiconductor device.
摘要翻译：在用于TFT液晶显示系统的半导体器件的制造工艺中，在开始结晶非晶硅（a-Si）之前，进行脱氢退火以不仅降低p-Si膜中的氢的密度（13）〜5×10 20原子/ cm 3以下，同时也防止由于膜中剩余的氢过量而导致的阻塞a-Si膜的结晶化。在用等离子体氮化物膜形式的层间绝缘膜（15）覆盖的p-Si膜（13）上，然后在氮气气氛中在350℃至400℃的温度下进行退火，一个至3小时，更优选400℃2小时。结果是，p-Si膜（13）中的氢原子有效地终止膜的悬挂键，因此不会变得过大，从而改善了半导体器件的电特性。

3. 发明授权

US06774957B2 Display apparatus having an electric shielding wire and method for manufacturing the same 有权
标题翻译：具有电屏蔽线的显示装置及其制造方法
公开(公告)号：US06774957B2
公开(公告)日：2004-08-10
申请号：US09160312
申请日：1998-09-25
申请人： Yushi Jinno , Kyoko Hirai
发明人： Yushi Jinno , Kyoko Hirai
IPC分类号： G02F11333
CPC分类号： G02F1/136204 , G02F1/1345
摘要： An electric shielding wire made of Cr is provided near the edge of a substrate, in which the electric shielding wire is a lower electric layer for an TFT element. Because countermeasures against static electricity are taken at an early manufacturing stage of the substrate, the elements formed on the substrate are protected against damage due to static electricity generated in subsequent stages. The electricity shielding wire is ultimately used as a pedestal for a wire. With this arrangement, characteristics of various elements of a driver-integrated LCD are protected against deterioration due to static electricity generated in a manufacturing process.
摘要翻译：在基板的边缘附近设置由Cr构成的电屏蔽线，其中，电屏蔽线是用于TFT元件的下电层。由于在基板的早期制造阶段采取对抗静电的对策，因此可以防止在基板上形成的元件由于后续阶段产生的静电而受到损坏。电屏蔽线最终用作电线的基座。利用这种布置，可以防止驱动器集成LCD的各种元件的特性由于在制造过程中产生的静电而被劣化。

4. 发明授权

US06365915B1 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US06365915B1
公开(公告)日：2002-04-02
申请号：US09274124
申请日：1999-03-23
申请人： Kyoko Hirai , Yushi Jinno
发明人： Kyoko Hirai , Yushi Jinno
IPC分类号： H01L2904
CPC分类号： G02F1/134336 , G02F1/136227 , G02F1/1368 , G02F2201/50 , H01L29/78636 , H01L29/78645
摘要： In a thin film transistor (TFT), a gate electrode, a gate insulating film, a poly silicon film having a channel, a stopper insulating film on the channel, an interlayer insulating film, a source electrode and a drain electrode, a planarizating film, and a transparent electrode are formed on an insulating substrate in that order. In this TFT, either of the source electrode and the drain electrode or the transparent electrode is formed on the interlayer insulating film or the planarizating film spreading over the channel. This will restrain the occurrence of a back channel resulting from polarization in the planarizating film or the interlayer insulating film in the TFT caused by water or impurity ions, or variation of a threshold voltage of the TFT when a back channel occurs. As a result, TFTs and liquid crystal displays which have few defects and can perform display having uniform brightness all over can be provided.
摘要翻译：在薄膜晶体管（TFT），栅电极，栅极绝缘膜，具有沟道的多晶硅膜，沟道上的阻挡绝缘膜，层间绝缘膜，源电极和漏电极，平坦化膜并且在绝缘基板上依次形成透明电极。在该TFT中，源电极和漏电极或透明电极中的任何一个形成在层间绝缘膜上或平坦化膜上扩展通道。这将抑制由于水或杂质离子引起的TFT中的平坦化膜或层间绝缘膜的偏振，或背面通道发生时TFT的阈值电压的变化而导致的背沟道的发生。结果，可以提供具有很少缺陷并且可以执行具有均匀亮度的显示的TFT和液晶显示器。

5. 发明授权

US6163310A Display apparatus with a built-in driver 有权
标题翻译：具有内置驱动程序的显示设备
公开(公告)号：US6163310A
公开(公告)日：2000-12-19
申请号：US162835
申请日：1998-09-29
申请人： Yushi Jinno , Kyoko Hirai
发明人： Yushi Jinno , Kyoko Hirai
IPC分类号： G02F1/1345 , G02F1/1339 , G02F1/1341 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09G3/36
CPC分类号： G02F1/13454 , G02F1/1339 , G02F1/1341 , G09G3/3648
摘要： Gate lines and drain lines are arranged to cross each other on an inner surface of a substrate and display pixels are formed at individual intersections of these lines. For actuation of these elements, a drain driver, a gate driver, and a precharge driver are formed on the periphery of the substrate. Aluminum lines extend to respective circuits along the edge of the substrate from connecting terminals formed on the edge of the substrate. A sealing material is applied along the periphery of the substrate and an injection hole for liquid crystal is formed on one edge of the substrate. The drain driver is disposed on the edge opposite to the edge on which the injection hole is formed at a location as far from the injection hole as possible. Thus, the drain driver is distanced from the liquid crystal injection hole to prevent the failure of the display apparatus due to the fluctuation of a threshold value.
摘要翻译：栅极线和漏极线布置成在衬底的内表面上彼此交叉，并且在这些线的各个交叉处形成显示像素。为了致动这些元件，在衬底的周边上形成漏极驱动器，栅极驱动器和预充电驱动器。铝线从衬底边缘形成的连接端子延伸到各个电路的边缘。沿着基板的周边施加密封材料，并且在基板的一个边缘上形成用于液晶的注入孔。漏极驱动器设置在与注入孔形成的边缘相反的边缘处，尽可能远离注入孔。因此，漏极驱动器与液晶注入孔间隔开，以防止由于阈值的波动引起的显示装置的故障。

6. 发明授权

US06731260B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US06731260B2
公开(公告)日：2004-05-04
申请号：US09169460
申请日：1998-10-09
申请人： Yushi Jinno , Kyoko Hirai
发明人： Yushi Jinno , Kyoko Hirai
IPC分类号： G09G500
CPC分类号： G09G3/3677 , G09G3/3688 , G09G2300/0408
摘要： A sealing material is formed to cover a drain driver comprising a horizontal shift register and a sampling portion and its edge lines are linear on the horizontal shift register. Operation characteristics of TFT elements just below the sealing material are changed and are different from those of TFT elements of the area not below the sealing material. However, operation characteristics do not differ between phases of the shift register, and adverse effects for display can be prevented.
摘要翻译：形成密封材料以覆盖包括水平移位寄存器和采样部分的漏极驱动器，并且其边缘线在水平移位寄存器上是线性的。刚好在密封材料下方的TFT元件的操作特性发生变化，并且与不在密封材料下方的TFT元件的操作特性不同。然而，移位寄存器的相位的动作特性没有差别，能够防止显示的不利影响。

7. 发明申请

US20050099550A1 Semiconductor device and display device 审中-公开
标题翻译：半导体器件和显示器件
公开(公告)号：US20050099550A1
公开(公告)日：2005-05-12
申请号：US10952957
申请日：2004-09-29
申请人： Yushi Jinno
发明人： Yushi Jinno
IPC分类号： H05B33/10 , G02F1/1343 , G02F1/136 , G02F1/1362 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L27/02 , H01L27/32 , H01L29/786 , H01L51/50 , H05B33/00 , H05B33/14 , H05B33/26
CPC分类号： H01L21/76894 , G02F1/136259 , H01L27/3276 , H01L2251/568
摘要： In a deficient defect (disconnection) portion of, for example, power supply lines formed on a same substrate and set to a same potential, ends of the disconnection and power supply lines adjacent to the power supply line in which disconnection occurs are connected by a same repair line. The repair line pattern can be formed, for example, through a drawing process by scanning a formation region of the repair line pattern with a laser beam in a gas atmosphere of a conductive material such as tungsten. By connecting the repair line pattern to not only the disconnection portion, but also to adjacent power supply lines, the line resistance can be reduced and flatness over the repair line pattern can be improved.
摘要翻译：在形成在同一基板上并且设定为相同电位的电源线的缺陷（断开）部分中，与发生断线的电源线相邻的断路和电源线的端部通过同一条维修线。修复线图案可以例如通过在诸如钨的导电材料的气体气氛中用激光束扫描修复线图案的形成区域的拉伸工艺来形成。通过将修复线图案连接到不仅断开部分，而且连接到相邻的电源线，可以减小线路电阻并且可以提高修复线路图形上的平坦度。

8. 发明授权

US08003978B2 Organic electroluminescent display device 有权
标题翻译：有机电致发光显示装置
公开(公告)号：US08003978B2
公开(公告)日：2011-08-23
申请号：US11526238
申请日：2006-09-25
申请人： Yushi Jinno
发明人： Yushi Jinno
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： H01L27/3272 , H01L27/12 , H01L29/78633
摘要： The invention prevents a photocurrent due to external light and a variation in characteristics of transistors or a failure by a short circuit due to the influence of a back channel. A light shield film made of a nonconductive material is formed on an insulation substrate. A back gate insulation film is formed covering the light shield film. An active layer is formed on this back gate insulation film. A gate insulation film is formed covering the active layer, and a gate electrode is formed on the gate insulation film. The light shield film is disposed covering the active layer with the back gate insulation film interposed therebetween, having a function of shielding the active layer from external light entering through the insulation substrate.
摘要翻译：本发明防止由于外部光的光电流和晶体管的特性的变化或者由于反向通道的影响而引起的短路故障。在绝缘基板上形成由非导电材料制成的遮光膜。形成覆盖遮光膜的背栅绝缘膜。在该背栅绝缘膜上形成有源层。形成覆盖有源层的栅极绝缘膜，并且在栅极绝缘膜上形成栅电极。遮光膜被设置成覆盖有源层，其间插入有背栅绝缘膜，具有屏蔽活性层与通过绝缘基板进入的外部光的功能。

9. 发明授权

US06914448B2 Transistor circuit 有权
标题翻译：晶体管电路
公开(公告)号：US06914448B2
公开(公告)日：2005-07-05
申请号：US10388254
申请日：2003-03-13
申请人： Yushi Jinno
发明人： Yushi Jinno
IPC分类号： H01L21/822 , G09G3/00 , G09G3/32 , H01L21/336 , H01L27/04 , H01L27/12 , H01L27/32 , H01L29/786 , G01R31/26
CPC分类号： G09G3/3225 , G09G3/006 , G09G2300/0842 , H01L27/12 , H01L27/3244
摘要： Transistor capacitance Cdtr inevitably generated between the gate and the drain of a second TFT is increased. Accordingly, an operation test of a first TFT and the second TFT can be conducted by turning on the first TFT to charge the transistor capacitance Cdtr and detecting the stored charges.
摘要翻译：在第二TFT的栅极和漏极之间不可避免地产生的晶体管电容Cdtr增加。因此，通过接通第一TFT以对晶体管电容Cdtr进行充电并检测存储的电荷，可以进行第一TFT和第二TFT的操作测试。

10. 发明授权

US06207971B1 Thin film transistor suitable for use in an active matrix type display and method of fabricating the same 失效
标题翻译：适用于有源矩阵型显示器的薄膜晶体管及其制造方法
公开(公告)号：US06207971B1
公开(公告)日：2001-03-27
申请号：US08997763
申请日：1997-12-24
申请人： Yushi Jinno , Ken Wakita , Masahiro Minegishi
发明人： Yushi Jinno , Ken Wakita , Masahiro Minegishi
IPC分类号： H01L2904
CPC分类号： G02F1/13454 , G09G3/3648 , H01L21/02532 , H01L21/02686 , H01L21/2026 , H01L27/1285 , H01L29/04 , H01L29/66765 , H01L29/78678
摘要： A thin film transistor which can be used in an LCD display panel includes an insulator substrate, a gate electrode located on the insulator substrate, an insulator film provided on the insulator substrate and the gate electrode, and a polycrystalline silicon film located on the insulator film. A channel is defined in a first portion of the polycrystalline silicon film over the gate electrode, and a drain and a source are defined in second and third portions of the polycrystalline silicon film over the insulator substrate. Grain sizes of the drain and source are equal to or greater than a grain size of the channel.
摘要翻译：可用于LCD显示面板的薄膜晶体管包括绝缘体基板，位于绝缘体基板上的栅电极，设置在绝缘体基板和栅电极上的绝缘膜，以及位于绝缘膜上的多晶硅膜。沟道被限定在栅电极上的多晶硅膜的第一部分中，并且漏极和源极被限定在绝缘体衬底上的多晶硅膜的第二和第三部分中。漏极和源极的晶粒尺寸等于或大于通道的晶粒尺寸。

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