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1. 发明授权

US07045818B2 Semiconductor device and method of manufacturing the same comprising thin film containing low concentration of hydrogen 有权
标题翻译：半导体装置及其制造方法包括含有低浓度氢的薄膜
公开(公告)号：US07045818B2
公开(公告)日：2006-05-16
申请号：US10818425
申请日：2004-04-05
申请人： Yushi Jinno , Shiro Nakanishi , Kyoko Hirai , Tsutomu Yamada , Yoshihiro Morimoto , Kiyoshi Yoneda
发明人： Yushi Jinno , Shiro Nakanishi , Kyoko Hirai , Tsutomu Yamada , Yoshihiro Morimoto , Kiyoshi Yoneda
IPC分类号： H01L31/20 , H01L29/04 , H01L21/00
CPC分类号： H01L27/127 , H01L27/1214 , H01L29/66765 , H01L29/78621
摘要： In a fabrication process of a semiconductor device for use in a TFT liquid crystal display system, before the start of crystallizing amorphous silicon (a-Si), dehydrogenation annealing is carried out to not only decrease the density of hydrogen in the p-Si film (13) to 5×1020 atoms/cm3 at most but also to prevent crystallization of the a-Si film (13) being obstructed due to possible excessive hydrogen remaining in the film. With the p-Si film (13) covered with an interlayer insulation film (15) in the form of a plasma nitride film, annealing is then carried out in nitrogen atmosphere at a temperature of 350° C. to 400° C. for one to three hours, more preferably 400° C. for two hours. The result is that hydrogen atoms in the p-Si film (13) efficiently terminate dangling bonds of the film and hence do not become excessive, thus improving the electrical characteristics of the semiconductor device.
摘要翻译：在用于TFT液晶显示系统的半导体器件的制造工艺中，在开始结晶非晶硅（a-Si）之前，进行脱氢退火以不仅降低p-Si膜中的氢的密度（13）至5×10 20原子/ cm 3以上，同时也防止由于可能存在过剩氢气而导致的阻塞a-Si膜（13）的结晶电影。在用等离子体氮化物膜形式的层间绝缘膜（15）覆盖的p-Si膜（13）上，然后在氮气气氛中在350℃至400℃的温度下进行退火，一个至3小时，更优选400℃2小时。结果是，p-Si膜（13）中的氢原子有效地终止膜的悬挂键，因此不会变得过大，从而改善了半导体器件的电特性。

2. 发明授权

US06750086B2 Semiconductor device having a semiconductor thin film containing low concentration of unbound hydrogen atoms and method of manufacturing the same 失效
标题翻译：具有含有低浓度未结合氢原子的半导体薄膜的半导体器件及其制造方法
公开(公告)号：US06750086B2
公开(公告)日：2004-06-15
申请号：US09049353
申请日：1998-03-27
申请人： Yushi Jinno , Shiro Nakanishi , Kyoko Hirai , Tsutomu Yamada , Yoshihiro Morimoto , Kiyoshi Yoneda
发明人： Yushi Jinno , Shiro Nakanishi , Kyoko Hirai , Tsutomu Yamada , Yoshihiro Morimoto , Kiyoshi Yoneda
IPC分类号： H01L2100
CPC分类号： H01L27/127 , H01L27/1214 , H01L29/66765 , H01L29/78621
摘要： In a fabrication process of a semiconductor device for use in a TFT liquid crystal display system, before the start of crystallizing amorphous silicon (a-Si), dehydrogenation annealing is carried out to not only decrease the density of hydrogen in the p-Si film (13) to 5×1020 atoms/cm3 at most but also to prevent crystallization of the a-Si film (13) being obstructed due to possible excessive hydrogen remaining in the film. With the p-Si film (13) covered with an interlayer insulation film (15) in the form of a plasma nitride film, annealing is then carried out in nitrogen atmosphere at a temperature of 350° C. to 400° C. for one to three hours, more preferably 400° C. for two hours. The result is that hydrogen atoms in the p-Si film (13) efficiently terminate dangling bonds of the film and hence do not become excessive, thus improving the electrical characteristics of the semiconductor device.
摘要翻译：在用于TFT液晶显示系统的半导体器件的制造工艺中，在开始结晶非晶硅（a-Si）之前，进行脱氢退火以不仅降低p-Si膜中的氢的密度（13）〜5×10 20原子/ cm 3以下，同时也防止由于膜中剩余的氢过量而导致的阻塞a-Si膜的结晶化。在用等离子体氮化物膜形式的层间绝缘膜（15）覆盖的p-Si膜（13）上，然后在氮气气氛中在350℃至400℃的温度下进行退火，一个至3小时，更优选400℃2小时。结果是，p-Si膜（13）中的氢原子有效地终止膜的悬挂键，因此不会变得过大，从而改善了半导体器件的电特性。

3. 发明授权

US07439114B2 Laser anneal method of a semiconductor layer 有权
标题翻译：半导体层的激光退火方法
公开(公告)号：US07439114B2
公开(公告)日：2008-10-21
申请号：US11207458
申请日：2005-08-18
申请人： Hidenori Ogata , Ken Wakita , Kiyoshi Yoneda , Yoshihiro Morimoto , Tsutomu Yamada , Kazuhiro Imao , Takashi Kuwahara
发明人： Hidenori Ogata , Ken Wakita , Kiyoshi Yoneda , Yoshihiro Morimoto , Tsutomu Yamada , Kazuhiro Imao , Takashi Kuwahara
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L21/268 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. Since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.
摘要翻译：为了通过将激光束照射到a-Si层进行多晶化来获得p-Si，将由激光束照射的区域中的能级设定为使沿着扫描方向的区域的后部区域的电平激光束比区域前区域或中心区域低。该区域的前部区域或中心区域的能级被设定为使得所获得的p-Si的粒径最大化的上限能级基本上等于或大于该能级。由于如上所述设定能量分布，当在a-Si层上扫描激光束时，该区域上的激光的照射能量随着激光束通过而从上限逐渐降低，这允许半导体在退火过程的后半期间在最佳能级内退火的层。

4. 发明授权

US07061017B2 Laser anneal method of a semiconductor layer 有权
标题翻译：半导体层的激光退火方法
公开(公告)号：US07061017B2
公开(公告)日：2006-06-13
申请号：US10714829
申请日：2003-11-14
申请人： Hidenori Ogata , Ken Wakita , Kiyoshi Yoneda , Yoshihiro Morimoto , Tsutomu Yamada , Kazuhiro Imao , Takashi Kuwahara
发明人： Hidenori Ogata , Ken Wakita , Kiyoshi Yoneda , Yoshihiro Morimoto , Tsutomu Yamada , Kazuhiro Imao , Takashi Kuwahara
IPC分类号： H01L29/76
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L21/268 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. Since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.
摘要翻译：为了通过将激光束照射到a-Si层进行多晶化来获得p-Si，将由激光束照射的区域中的能级设定为使沿着扫描方向的区域的后部区域的电平激光束比区域前区域或中心区域低。该区域的前部区域或中心区域的能级被设定为使得所获得的p-Si的粒径最大化的上限能级基本上等于或大于该能级。由于如上所述设定能量分布，当在a-Si层上扫描激光束时，该区域上的激光的照射能量随着激光束通过而从上限逐渐降低，这允许半导体在退火过程的后半期间在最佳能级内退火的层。

5. 发明授权

US06274414B1 Laser anneal method of a semiconductor layer 失效
标题翻译：半导体层的激光退火方法
公开(公告)号：US06274414B1
公开(公告)日：2001-08-14
申请号：US08911505
申请日：1997-08-14
申请人： Hidenori Ogata , Ken Wakita , Kiyoshi Yoneda , Yoshihiro Morimoto , Tsutomu Yamada , Kazuhiro Imao , Takashi Kuwahara
发明人： Hidenori Ogata , Ken Wakita , Kiyoshi Yoneda , Yoshihiro Morimoto , Tsutomu Yamada , Kazuhiro Imao , Takashi Kuwahara
IPC分类号： H01L21324
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L21/268 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.
摘要翻译：为了通过将激光束照射到a-Si层进行多晶化来获得p-Si，将由激光束照射的区域中的能级设定为使沿着扫描方向的区域的后部区域的电平激光束比区域前区域或中心区域低。该区域的前部区域或中心区域的能级被设定为使得所获得的p-Si的粒径最大化的上限能级基本上等于或大于该能级。由于如上所述设定能量分布，当在a-Si层上扫描激光束时，该区域上的激光的照射能量随着激光束通过而从上限逐渐降低，这允许半导体在退火过程的后半期间在最佳能级内退火的层。

6. 发明申请

US20050287825A1 Laser anneal method of a semiconductor layer 有权
标题翻译：半导体层的激光退火方法
公开(公告)号：US20050287825A1
公开(公告)日：2005-12-29
申请号：US11207458
申请日：2005-08-18
申请人： Hidenori Ogata , Ken Wakita , Kiyoshi Yoneda , Yoshihiro Morimoto , Tsutomu Yamada , Kazuhiro Imao , Takashi kuwahara
发明人： Hidenori Ogata , Ken Wakita , Kiyoshi Yoneda , Yoshihiro Morimoto , Tsutomu Yamada , Kazuhiro Imao , Takashi kuwahara
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/20 , H01L21/26 , H01L21/268 , H01L21/3205 , H01L21/324 , H01L21/336 , H01L21/42 , H01L21/4763 , H01L21/477 , H01L21/77 , H01L21/84 , H01L29/786
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L21/268 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. Since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.
摘要翻译：为了通过将激光束照射到a-Si层进行多晶化来获得p-Si，将由激光束照射的区域中的能级设定为使沿着扫描方向的区域的后部区域的电平激光束比区域前区域或中心区域低。该区域的前部区域或中心区域的能级被设定为使得所获得的p-Si的粒径最大化的上限能级基本上等于或大于该能级。由于如上所述设定能量分布，当在a-Si层上扫描激光束时，该区域上的激光的照射能量随着激光束通过而从上限逐渐降低，这允许半导体在退火过程的后半期间在最佳能级内退火的层。

7. 发明授权

US06867075B2 Manufacturing method of thin film transistor in which a total film thickness of silicon oxide films is defined 有权
标题翻译：限定氧化硅膜的总膜厚度的薄膜晶体管的制造方法
公开(公告)号：US06867075B2
公开(公告)日：2005-03-15
申请号：US10378359
申请日：2003-03-03
申请人： Nobuhiko Oda , Shiro Nakanishi , Shinji Yuda , Tsutomu Yamada
发明人： Nobuhiko Oda , Shiro Nakanishi , Shinji Yuda , Tsutomu Yamada
IPC分类号： H01L27/08 , H01L21/318 , H01L21/336 , H01L29/786 , H01L21/00 , H01L21/84
CPC分类号： H01L29/66765 , H01L29/78636
摘要： On a transparent substrate to which a gate electrode is arranged, a silicon nitride film and a silicon oxide film to be gate insulating films are deposited, and further, a polycrystalline silicon film as a semiconductor film to be an active region is formed. On the polycrystalline silicon film corresponding to the gate electrode, a stopper is arranged, and a silicon oxide film and a silicon nitride film to be an interlayer insulating films are deposited so as to cover this stopper. The film thickness T0 of the stopper is set in a range of 800 angstroms to 1200 angstroms. Furthermore, the film thickness T0 of the stopper is set in the range to fulfill the following expression: T0+T1≦(T2×8000 Å) where T1 is the film thickness of the silicon oxide film and T2 is the film thickness of the silicon nitride film.
摘要翻译：在配置有栅电极的透明基板上，淀积作为栅绝缘膜的氮化硅膜和氧化硅膜，形成作为有源区的半导体膜的多晶硅膜。在对应于栅电极的多晶硅膜上，设置有阻挡层，并且沉积作为层间绝缘膜的氧化硅膜和氮化硅膜以覆盖该阻挡层。挡块的膜厚度T0设定在800〜1200埃的范围内。此外，阻挡层的膜厚度T0设定在满足以下表达式的范围内：其中，T1是氧化硅膜的膜厚度，T2是氮化硅膜的膜厚度。

8. 发明授权

US06613618B1 Thin-film transistor and method of producing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US06613618B1
公开(公告)日：2003-09-02
申请号：US09542200
申请日：2000-04-04
申请人： Shiro Nakanishi , Tsutomu Yamada
发明人： Shiro Nakanishi , Tsutomu Yamada
IPC分类号： H01L2184
CPC分类号： H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678
摘要： A thin-film transistor is provided in which the thickness of the insulating film is optimized. A gate electrode is formed on a transparent substrate. A silicon nitride film and a silicon oxide film, acting as a gate insulating film, are formed over the transparent substrate. A polycrystalline silicon film, being a semiconductor film, is formed acting as an active region. A stopper is formed on the polycrystalline silicon film corresponding to the gate electrode. A silicon oxide film and a silicon nitride film, acting as an interlayer insulating film, are deposited as to cover the stopper region. The total film thickness T1 of the stopper and the silicon oxide film is formed to be thinner than (the thickness T2 of the silicon nitride film×8000 Å)½. This structure allows hydrogen atoms to be sufficiently supplied from the silicon nitride film into the polycrystalline silicon film via the stopper and the silicon oxide film, so that crystalline defects in the polycrystalline silicon film can be filled with the hydrogen atoms.
摘要翻译：提供了薄膜晶体管，其中绝缘膜的厚度被优化。在透明基板上形成栅电极。在透明基板上形成用作栅极绝缘膜的氮化硅膜和氧化硅膜。作为半导体膜的多晶硅膜被形成为起主动区域的作用。在与栅电极相对应的多晶硅膜上形成止动件。作为层间绝缘膜的氧化硅膜和氮化硅膜被沉积以覆盖阻挡区域。阻挡层和氧化硅膜的总膜厚T1形成为比（氮化硅膜的厚度T2）薄。这种结构使得氢原子能够通过阻挡层和氧化硅膜从氮化硅膜充分供给到多晶硅膜中，从而可以用氢原子填充多晶硅膜中的晶体缺陷。

9. 发明授权

US06191452B1 Thin film transistor having a stopper layer 有权
标题翻译：具有阻挡层的薄膜晶体管
公开(公告)号：US06191452B1
公开(公告)日：2001-02-20
申请号：US09162836
申请日：1998-09-29
申请人： Nobuhiko Oda , Shiro Nakanishi , Shinji Yuda , Tsutomu Yamada
发明人： Nobuhiko Oda , Shiro Nakanishi , Shinji Yuda , Tsutomu Yamada
IPC分类号： H01L2900
CPC分类号： H01L29/66765 , H01L29/78636
摘要： On a transparent substrate to which a gate electrode is arranged, a silicon nitride film and a silicon oxide film to be gate insulating films are deposited, and further, a polycrystalline silicon film as a semiconductor film to be an active region is formed. On the polycrystalline silicon film corresponding to the gate electrode, a stopper is arranged, and a silicon oxide film and a silicon nitride film to be an interlayer insulating films are deposited so as to cover this stopper. The film thickness T0 of the stopper is set in a range of 800 angstroms to 1200 angstroms. Furthermore, the film thickness T0 of the stopper is set in the range to fulfill the following expression: T0+T1≦(T2×8000 Å)½ where T1 is the film thickness of the silicon oxide film and T2 is the film thickness of the silicon nitride film.
摘要翻译：在配置有栅电极的透明基板上，淀积作为栅绝缘膜的氮化硅膜和氧化硅膜，形成作为有源区的半导体膜的多晶硅膜。在对应于栅电极的多晶硅膜上，设置有阻挡层，并且沉积作为层间绝缘膜的氧化硅膜和氮化硅膜以覆盖该阻挡层。挡块的膜厚度T0设定在800〜1200埃的范围内。此外，阻挡层的膜厚度T0设定在满足以下表达式的范围内：其中，T1是氧化硅膜的膜厚度，T2是氮化硅膜的膜厚度。

10. 发明授权

US06501448B1 Electroluminescence display device with improved driving transistor structure 有权
标题翻译：具有改进的驱动晶体管结构的电致发光显示装置
公开(公告)号：US06501448B1
公开(公告)日：2002-12-31
申请号：US09493893
申请日：2000-01-28
申请人： Naoaki Komiya , Tsutomu Yamada , Kiyoshi Yoneda
发明人： Naoaki Komiya , Tsutomu Yamada , Kiyoshi Yoneda
IPC分类号： G09G330
CPC分类号： G09G3/3233 , G09G2300/0426 , G09G2300/0819 , G09G2300/0842 , G09G2320/0233 , G09G2320/043 , H01L27/3262
摘要： An organic EL display device comprises a first TFT (30), which is a switching TFT, an organic EL element driving TFT, and an organic EL element (60) having an anode (61), a cathode (66), and an emissive element layer (65) interposed between both electrodes. The EL element driving TFT comprises a second and third TFTs (35, 40) connected in parallel. Because electrical current to the organic EL element (60) is supplied from a plurality of TFTs (35, 40), variation in the total current value can be suppressed to therefore reduce the variation in luminance, even when characteristics vary among the TFTs driving the organic EL element.
摘要翻译：有机EL显示装置包括作为开关TFT的第一TFT（30），有机EL元件驱动TFT和具有阳极（61），阴极（66）和发光二极管（60）的有机EL元件（60）元件层（65）插入在两个电极之间。 EL元件驱动TFT包括并联连接的第二TFT和第三TFT（35,40）。由于从多个TFT（35,40）供给到有机EL元件（60）的电流，因此即使当驱动TFT的TFT之间的特性变化时，也可以抑制总电流值的变化，从而降低亮度的变化有机EL元件。

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