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1. 发明授权

US07045818B2 Semiconductor device and method of manufacturing the same comprising thin film containing low concentration of hydrogen 有权
标题翻译：半导体装置及其制造方法包括含有低浓度氢的薄膜
公开(公告)号：US07045818B2
公开(公告)日：2006-05-16
申请号：US10818425
申请日：2004-04-05
申请人： Yushi Jinno , Shiro Nakanishi , Kyoko Hirai , Tsutomu Yamada , Yoshihiro Morimoto , Kiyoshi Yoneda
发明人： Yushi Jinno , Shiro Nakanishi , Kyoko Hirai , Tsutomu Yamada , Yoshihiro Morimoto , Kiyoshi Yoneda
IPC分类号： H01L31/20 , H01L29/04 , H01L21/00
CPC分类号： H01L27/127 , H01L27/1214 , H01L29/66765 , H01L29/78621
摘要： In a fabrication process of a semiconductor device for use in a TFT liquid crystal display system, before the start of crystallizing amorphous silicon (a-Si), dehydrogenation annealing is carried out to not only decrease the density of hydrogen in the p-Si film (13) to 5×1020 atoms/cm3 at most but also to prevent crystallization of the a-Si film (13) being obstructed due to possible excessive hydrogen remaining in the film. With the p-Si film (13) covered with an interlayer insulation film (15) in the form of a plasma nitride film, annealing is then carried out in nitrogen atmosphere at a temperature of 350° C. to 400° C. for one to three hours, more preferably 400° C. for two hours. The result is that hydrogen atoms in the p-Si film (13) efficiently terminate dangling bonds of the film and hence do not become excessive, thus improving the electrical characteristics of the semiconductor device.
摘要翻译：在用于TFT液晶显示系统的半导体器件的制造工艺中，在开始结晶非晶硅（a-Si）之前，进行脱氢退火以不仅降低p-Si膜中的氢的密度（13）至5×10 20原子/ cm 3以上，同时也防止由于可能存在过剩氢气而导致的阻塞a-Si膜（13）的结晶电影。在用等离子体氮化物膜形式的层间绝缘膜（15）覆盖的p-Si膜（13）上，然后在氮气气氛中在350℃至400℃的温度下进行退火，一个至3小时，更优选400℃2小时。结果是，p-Si膜（13）中的氢原子有效地终止膜的悬挂键，因此不会变得过大，从而改善了半导体器件的电特性。

2. 发明授权

US06750086B2 Semiconductor device having a semiconductor thin film containing low concentration of unbound hydrogen atoms and method of manufacturing the same 失效
标题翻译：具有含有低浓度未结合氢原子的半导体薄膜的半导体器件及其制造方法
公开(公告)号：US06750086B2
公开(公告)日：2004-06-15
申请号：US09049353
申请日：1998-03-27
申请人： Yushi Jinno , Shiro Nakanishi , Kyoko Hirai , Tsutomu Yamada , Yoshihiro Morimoto , Kiyoshi Yoneda
发明人： Yushi Jinno , Shiro Nakanishi , Kyoko Hirai , Tsutomu Yamada , Yoshihiro Morimoto , Kiyoshi Yoneda
IPC分类号： H01L2100
CPC分类号： H01L27/127 , H01L27/1214 , H01L29/66765 , H01L29/78621
摘要： In a fabrication process of a semiconductor device for use in a TFT liquid crystal display system, before the start of crystallizing amorphous silicon (a-Si), dehydrogenation annealing is carried out to not only decrease the density of hydrogen in the p-Si film (13) to 5×1020 atoms/cm3 at most but also to prevent crystallization of the a-Si film (13) being obstructed due to possible excessive hydrogen remaining in the film. With the p-Si film (13) covered with an interlayer insulation film (15) in the form of a plasma nitride film, annealing is then carried out in nitrogen atmosphere at a temperature of 350° C. to 400° C. for one to three hours, more preferably 400° C. for two hours. The result is that hydrogen atoms in the p-Si film (13) efficiently terminate dangling bonds of the film and hence do not become excessive, thus improving the electrical characteristics of the semiconductor device.
摘要翻译：在用于TFT液晶显示系统的半导体器件的制造工艺中，在开始结晶非晶硅（a-Si）之前，进行脱氢退火以不仅降低p-Si膜中的氢的密度（13）〜5×10 20原子/ cm 3以下，同时也防止由于膜中剩余的氢过量而导致的阻塞a-Si膜的结晶化。在用等离子体氮化物膜形式的层间绝缘膜（15）覆盖的p-Si膜（13）上，然后在氮气气氛中在350℃至400℃的温度下进行退火，一个至3小时，更优选400℃2小时。结果是，p-Si膜（13）中的氢原子有效地终止膜的悬挂键，因此不会变得过大，从而改善了半导体器件的电特性。

3. 发明授权

US6163310A Display apparatus with a built-in driver 有权
标题翻译：具有内置驱动程序的显示设备
公开(公告)号：US6163310A
公开(公告)日：2000-12-19
申请号：US162835
申请日：1998-09-29
申请人： Yushi Jinno , Kyoko Hirai
发明人： Yushi Jinno , Kyoko Hirai
IPC分类号： G02F1/1345 , G02F1/1339 , G02F1/1341 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09G3/36
CPC分类号： G02F1/13454 , G02F1/1339 , G02F1/1341 , G09G3/3648
摘要： Gate lines and drain lines are arranged to cross each other on an inner surface of a substrate and display pixels are formed at individual intersections of these lines. For actuation of these elements, a drain driver, a gate driver, and a precharge driver are formed on the periphery of the substrate. Aluminum lines extend to respective circuits along the edge of the substrate from connecting terminals formed on the edge of the substrate. A sealing material is applied along the periphery of the substrate and an injection hole for liquid crystal is formed on one edge of the substrate. The drain driver is disposed on the edge opposite to the edge on which the injection hole is formed at a location as far from the injection hole as possible. Thus, the drain driver is distanced from the liquid crystal injection hole to prevent the failure of the display apparatus due to the fluctuation of a threshold value.
摘要翻译：栅极线和漏极线布置成在衬底的内表面上彼此交叉，并且在这些线的各个交叉处形成显示像素。为了致动这些元件，在衬底的周边上形成漏极驱动器，栅极驱动器和预充电驱动器。铝线从衬底边缘形成的连接端子延伸到各个电路的边缘。沿着基板的周边施加密封材料，并且在基板的一个边缘上形成用于液晶的注入孔。漏极驱动器设置在与注入孔形成的边缘相反的边缘处，尽可能远离注入孔。因此，漏极驱动器与液晶注入孔间隔开，以防止由于阈值的波动引起的显示装置的故障。

4. 发明授权

US06365915B1 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US06365915B1
公开(公告)日：2002-04-02
申请号：US09274124
申请日：1999-03-23
申请人： Kyoko Hirai , Yushi Jinno
发明人： Kyoko Hirai , Yushi Jinno
IPC分类号： H01L2904
CPC分类号： G02F1/134336 , G02F1/136227 , G02F1/1368 , G02F2201/50 , H01L29/78636 , H01L29/78645
摘要： In a thin film transistor (TFT), a gate electrode, a gate insulating film, a poly silicon film having a channel, a stopper insulating film on the channel, an interlayer insulating film, a source electrode and a drain electrode, a planarizating film, and a transparent electrode are formed on an insulating substrate in that order. In this TFT, either of the source electrode and the drain electrode or the transparent electrode is formed on the interlayer insulating film or the planarizating film spreading over the channel. This will restrain the occurrence of a back channel resulting from polarization in the planarizating film or the interlayer insulating film in the TFT caused by water or impurity ions, or variation of a threshold voltage of the TFT when a back channel occurs. As a result, TFTs and liquid crystal displays which have few defects and can perform display having uniform brightness all over can be provided.
摘要翻译：在薄膜晶体管（TFT），栅电极，栅极绝缘膜，具有沟道的多晶硅膜，沟道上的阻挡绝缘膜，层间绝缘膜，源电极和漏电极，平坦化膜并且在绝缘基板上依次形成透明电极。在该TFT中，源电极和漏电极或透明电极中的任何一个形成在层间绝缘膜上或平坦化膜上扩展通道。这将抑制由于水或杂质离子引起的TFT中的平坦化膜或层间绝缘膜的偏振，或背面通道发生时TFT的阈值电压的变化而导致的背沟道的发生。结果，可以提供具有很少缺陷并且可以执行具有均匀亮度的显示的TFT和液晶显示器。

5. 发明授权

US06731260B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US06731260B2
公开(公告)日：2004-05-04
申请号：US09169460
申请日：1998-10-09
申请人： Yushi Jinno , Kyoko Hirai
发明人： Yushi Jinno , Kyoko Hirai
IPC分类号： G09G500
CPC分类号： G09G3/3677 , G09G3/3688 , G09G2300/0408
摘要： A sealing material is formed to cover a drain driver comprising a horizontal shift register and a sampling portion and its edge lines are linear on the horizontal shift register. Operation characteristics of TFT elements just below the sealing material are changed and are different from those of TFT elements of the area not below the sealing material. However, operation characteristics do not differ between phases of the shift register, and adverse effects for display can be prevented.
摘要翻译：形成密封材料以覆盖包括水平移位寄存器和采样部分的漏极驱动器，并且其边缘线在水平移位寄存器上是线性的。刚好在密封材料下方的TFT元件的操作特性发生变化，并且与不在密封材料下方的TFT元件的操作特性不同。然而，移位寄存器的相位的动作特性没有差别，能够防止显示的不利影响。

6. 发明授权

US06774957B2 Display apparatus having an electric shielding wire and method for manufacturing the same 有权
标题翻译：具有电屏蔽线的显示装置及其制造方法
公开(公告)号：US06774957B2
公开(公告)日：2004-08-10
申请号：US09160312
申请日：1998-09-25
申请人： Yushi Jinno , Kyoko Hirai
发明人： Yushi Jinno , Kyoko Hirai
IPC分类号： G02F11333
CPC分类号： G02F1/136204 , G02F1/1345
摘要： An electric shielding wire made of Cr is provided near the edge of a substrate, in which the electric shielding wire is a lower electric layer for an TFT element. Because countermeasures against static electricity are taken at an early manufacturing stage of the substrate, the elements formed on the substrate are protected against damage due to static electricity generated in subsequent stages. The electricity shielding wire is ultimately used as a pedestal for a wire. With this arrangement, characteristics of various elements of a driver-integrated LCD are protected against deterioration due to static electricity generated in a manufacturing process.
摘要翻译：在基板的边缘附近设置由Cr构成的电屏蔽线，其中，电屏蔽线是用于TFT元件的下电层。由于在基板的早期制造阶段采取对抗静电的对策，因此可以防止在基板上形成的元件由于后续阶段产生的静电而受到损坏。电屏蔽线最终用作电线的基座。利用这种布置，可以防止驱动器集成LCD的各种元件的特性由于在制造过程中产生的静电而被劣化。

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