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1. 发明申请

US20080050923A1 Low-k damage avoidance during bevel etch processing 有权
标题翻译：斜角蚀刻加工过程中的低k损伤避免
公开(公告)号：US20080050923A1
公开(公告)日：2008-02-28
申请号：US11510309
申请日：2006-08-25
申请人： Yunsang Kim , Andrew Bailey , Jack Chen
发明人： Yunsang Kim , Andrew Bailey , Jack Chen
IPC分类号： H01L21/461 , H01L21/302 , C03C25/68
CPC分类号： H01L21/02041 , H01L21/02087 , H01L21/31116 , H01L21/31138 , H01L21/67069 , H01L21/6833
摘要： A method for etching a bevel edge of a substrate is provided. A patterned photoresist mask is formed over the etch layer. The bevel edge is cleaned comprising providing a cleaning gas comprising at least one of a CO2, CO, CxHy, H2, NH3, CxHyFz and a combination thereof, forming a cleaning plasma from the cleaning gas, and exposing the bevel edge to the cleaning plasma. Features are etched into the etch layer through the photoresist features and the photoresist mask is removed.
摘要翻译：提供了蚀刻基板的斜边缘的方法。在蚀刻层上形成图案化的光致抗蚀剂掩模。所述斜边缘被清洁，包括提供清洁气体，所述清洁气体包括CO 2，CO，C，H，H，H， > 2，NH 3，C x H，Y z和它们的组合，形成来自清洁气体的清洁等离子体，并将斜面边缘暴露于清洁等离子体。通过光致抗蚀剂特征将特征蚀刻到蚀刻层中，并去除光致抗蚀剂掩模。

2. 发明授权

US07718542B2 Low-k damage avoidance during bevel etch processing 有权
标题翻译：斜角蚀刻加工过程中的低k损伤避免
公开(公告)号：US07718542B2
公开(公告)日：2010-05-18
申请号：US11510309
申请日：2006-08-25
申请人： Yunsang Kim , Andrew Bailey, III , Jack Chen
发明人： Yunsang Kim , Andrew Bailey, III , Jack Chen
IPC分类号： H01L21/302
CPC分类号： H01L21/02041 , H01L21/02087 , H01L21/31116 , H01L21/31138 , H01L21/67069 , H01L21/6833
摘要： A method for etching a bevel edge of a substrate is provided. A patterned photoresist mask is formed over the etch layer. The bevel edge is cleaned comprising providing a cleaning gas comprising at least one of a CO2, CO, CxHy, H2, NH3, CxHyFz and a combination thereof, forming a cleaning plasma from the cleaning gas, and exposing the bevel edge to the cleaning plasma. Features are etched into the etch layer through the photoresist features and the photoresist mask is removed.
摘要翻译：提供了蚀刻基板的斜边缘的方法。在蚀刻层上形成图案化的光致抗蚀剂掩模。清洁斜面边缘，包括提供包括CO 2，CO，C x H y，H 2，NH 3，C x H y Fz及其组合中的至少一种的清洁气体，从清洁气体形成清洁等离子体，并将斜面边缘暴露于清洁等离子体。通过光致抗蚀剂特征将特征蚀刻到蚀刻层中，并去除光致抗蚀剂掩模。

3. 发明申请

US20080156772A1 METHOD AND APPARATUS FOR WAFER EDGE PROCESSING 审中-公开
标题翻译： WAF边缘加工方法与装置
公开(公告)号：US20080156772A1
公开(公告)日：2008-07-03
申请号：US11618572
申请日：2006-12-29
申请人： Yunsang Kim , Jack Chen , Grace Fang , Andrew Bailey
发明人： Yunsang Kim , Jack Chen , Grace Fang , Andrew Bailey
IPC分类号： H01L21/306 , C23F1/02
CPC分类号： H01J37/32706 , H01J37/32532 , H01J37/32623 , H01L21/02087 , H01L21/0209 , H01L21/67069
摘要： Methods and apparatus for remedying arc-related damage to the substrate during plasma bevel etching. A plasma shield is disposed above the substrate to prevent plasma, which is generated in between two annular grounded plates, from reaching the exposed metallization on the substrate. Additionally or alternatively, a carbon-free fluorinated process source gas may be employed and/or the RF bias power may be ramped up gradually during plasma generation to alleviate arc-related damage during bevel etching. Also additionally or alternatively, helium and/or hydrogen may be added to the process source gas to alleviate arc-related damage during bevel etching.
摘要翻译：在等离子体斜面蚀刻期间用于补救对基板的电弧相关损伤的方法和装置。等离子体屏蔽设置在衬底之上，以防止在两个环形接地板之间产生的等离子体到达衬底上暴露的金属化。另外或替代地，可以采用无碳氟化处理源气体和/或在等离子体产生期间逐渐斜升RF偏置功率以减轻斜面蚀刻期间的电弧相关损伤。另外或替代地，可以将氦和/或氢加入到工艺源气体中以减轻斜面蚀刻期间的电弧相关损伤。

4. 发明授权

US08500951B2 Low-K damage avoidance during bevel etch processing 有权
标题翻译：斜角蚀刻加工期间的低K损伤避免
公开(公告)号：US08500951B2
公开(公告)日：2013-08-06
申请号：US12730146
申请日：2010-03-23
申请人： Yunsang Kim , Andrew Bailey, III , Jack Chen
发明人： Yunsang Kim , Andrew Bailey, III , Jack Chen
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/02041 , H01L21/02087 , H01L21/31116 , H01L21/31138 , H01L21/67069 , H01L21/6833
摘要： A method for etching a bevel edge of a substrate is provided. A patterned photoresist mask is formed over the etch layer. The bevel edge is cleaned comprising providing a cleaning gas comprising at least one of a CO2, CO, CxHy, H2, NH3, CxHyFz and a combination thereof, forming a cleaning plasma from the cleaning gas, and exposing the bevel edge to the cleaning plasma. Features are etched into the etch layer through the photoresist features and the photoresist mask is removed.
摘要翻译：提供了蚀刻基板的斜边缘的方法。在蚀刻层上形成图案化的光致抗蚀剂掩模。清洁斜面边缘，包括提供包括CO 2，CO，C x H y，H 2，NH 3，C x H y Fz及其组合中的至少一种的清洁气体，从清洁气体形成清洁等离子体，并将斜面边缘暴露于清洁等离子体。通过光致抗蚀剂特征将特征蚀刻到蚀刻层中，并去除光致抗蚀剂掩模。

5. 发明申请

US20080185105A1 Apparatus for defining regions of process exclusion and process performance in a process chamber 有权
标题翻译：用于限定处理室中的工艺排除区域和工艺性能的装置
公开(公告)号：US20080185105A1
公开(公告)日：2008-08-07
申请号：US11701854
申请日：2007-02-02
申请人： Andrew D. Bailey , Jack Chen , Yunsang Kim , Gregory S. Sexton
发明人： Andrew D. Bailey , Jack Chen , Yunsang Kim , Gregory S. Sexton
IPC分类号： C23F1/00
CPC分类号： H01L21/67069 , H01J37/32568 , H01L21/68721
摘要： Positional relationships are established in a process chamber. An upper electrode is configured with a first surface to support a wafer, and an electrode has a second surface. A linear drive is mounted on the base and a linkage connected between the drive and the upper electrode. Linkage adjustment defines a desired orientation between the surfaces. The linear drive and linkage maintain the desired orientation while the assembly moves the upper electrode with the surfaces moving relative to each other. An annular etching region defined between the electrodes enables etching of a wafer edge exclusion region extending along a top and bottom of the wafer. Removable etch defining rings are configured to define unique lengths along each of the top and bottom of the wafer to be etched. Positional relationships of the surfaces enable limiting the etching to those unique lengths of the exclusion region.
摘要翻译：位置关系建立在一个过程室中。上电极配置有第一表面以支撑晶片，并且电极具有第二表面。线性驱动器安装在基座上，连接在驱动器和上电极之间。连接调整定义了表面之间的期望取向。线性驱动器和连接件保持所需的取向，同时组件移动上电极，表面相对于彼此移动。限定在电极之间的环形蚀刻区域能够蚀刻沿着晶片的顶部和底部延伸的晶片边缘排除区域。可移除蚀刻限定环被配置为沿待蚀刻的晶片的顶部和底部的每一个限定独特的长度。表面的位置关系使得能够将蚀刻限制到排除区域的那些独特长度。

6. 发明申请

US20140007901A1 METHODS AND APPARATUS FOR BEVEL EDGE CLEANING IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：在等离子体处理系统中进行水平边缘清洗的方法和装置
公开(公告)号：US20140007901A1
公开(公告)日：2014-01-09
申请号：US13543028
申请日：2012-07-06
申请人： Jack Chen , Gregory Sexton , Yunsang Kim
发明人： Jack Chen , Gregory Sexton , Yunsang Kim
IPC分类号： B08B7/00 , B32B1/04
CPC分类号： H01L21/67028 , H01L21/67051 , Y10T428/218
摘要： Methods and apparatus for more efficiently cleaning a substrate having a notch in a plasma processing chamber configured for bevel edge cleaning. A notched plasma exclusion ring an inner periphery and an outer periphery is provided. The notched plasma exclusion ring has a ring notch formed at its outer periphery. The notched plasma exclusion ring has a notch apex dimension that is at least as large as a notch apex dimension of the substrate notch and a notch opening dimension that is at least as large as a notch opening dimension of the substrate notch. Methods for obtaining misalignment data and for subsequently rotate substrates to more efficiently clean the substrate notch are also disclosed.
摘要翻译：用于更有效地清洁在等离子体处理室中具有凹口的衬底的方法和装置，其被配置用于斜面边缘清洁。提供了一个内周边和外围的缺口等离子体排除环。缺口等离子体排除环在其外周形成有环形凹口。缺口等离子体排除环具有至少与基板切口的切口顶点尺寸一样大的切口顶点尺寸和至少与基板切口的切口开口尺寸一样大的切口开口尺寸。还公开了用于获得未对准数据并随后旋转衬底以更有效地清洁衬底凹口的方法。

7. 发明授权

US08562750B2 Method and apparatus for processing bevel edge 有权
标题翻译：斜边加工方法及装置
公开(公告)号：US08562750B2
公开(公告)日：2013-10-22
申请号：US12640926
申请日：2009-12-17
申请人： Jack Chen , Yunsang Kim
发明人： Jack Chen , Yunsang Kim
IPC分类号： B08B7/04
CPC分类号： H01L21/02274 , C23C16/0245 , C23C16/04 , C23C16/509 , H01L21/02087 , H01L21/02115 , H01L21/3083 , H01L21/31144
摘要： A method and apparatus for processing a bevel edge is provided. A substrate is placed in a bevel processing chamber and a passivation layer is formed on the substrate only around a bevel region of the substrate using a passivation plasma confined in a peripheral region of the bevel processing chamber. The substrate may undergo a subsequent semiconductor process, during which the bevel edge region of the substrate is protected by the passivation layer. Alternatively, the passivation layer may be patterned using a patterning plasma formed in an outer peripheral region of the processing chamber, the patterning plasma being confined by increasing plasma confinement. The passivation layer on outer edge portion of the bevel region is removed, while the passivation layer on an inner portion of the bevel region is maintained. The bevel edge of the substrate may be cleaned using the patterned passivation layer as a protective mask.
摘要翻译：提供了一种用于处理斜边的方法和装置。将衬底放置在斜面处理室中，并且使用限制在斜面处理室的周边区域中的钝化等离子体在衬底的仅一个斜面区域周围形成钝化层。衬底可以经历随后的半导体工艺，在此期间衬底的斜边缘区域被钝化层保护。或者，可以使用在处理室的外围区域中形成的图案化等离子体对钝化层进行图案化，通过增加等离子体限制来限制图形化等离子体。去除斜面区域的外边缘部分上的钝化层，同时保持斜面区域的内部部分上的钝化层。可以使用图案化的钝化层作为保护掩模来清洁基底的斜边缘。

8. 发明授权

US07575638B2 Apparatus for defining regions of process exclusion and process performance in a process chamber 有权
标题翻译：用于限定处理室中的工艺排除区域和工艺性能的装置
公开(公告)号：US07575638B2
公开(公告)日：2009-08-18
申请号：US11701854
申请日：2007-02-02
申请人： Andrew D. Bailey, III , Jack Chen , Yunsang Kim , Gregory S. Sexton
发明人： Andrew D. Bailey, III , Jack Chen , Yunsang Kim , Gregory S. Sexton
IPC分类号： B05B5/025 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/67069 , H01J37/32568 , H01L21/68721
摘要： Positional relationships are established in a process chamber. An upper electrode is configured with a first surface to support a wafer, and an electrode has a second surface. A linear drive is mounted on the base and a linkage connected between the drive and the upper electrode. Linkage adjustment defines a desired orientation between the surfaces. The linear drive and linkage maintain the desired orientation while the assembly moves the upper electrode with the surfaces moving relative to each other. An annular etching region defined between the electrodes enables etching of a wafer edge exclusion region extending along a top and bottom of the wafer. Removable etch defining rings are configured to define unique lengths along each of the top and bottom of the wafer to be etched. Positional relationships of the surfaces enable limiting the etching to those unique lengths of the exclusion region.
摘要翻译：位置关系建立在一个过程室中。上电极配置有第一表面以支撑晶片，并且电极具有第二表面。线性驱动器安装在基座上，连接在驱动器和上电极之间。连接调整定义了表面之间的期望取向。线性驱动器和连接件保持所需的取向，同时组件移动上电极，表面相对于彼此移动。限定在电极之间的环形蚀刻区域能够蚀刻沿着晶片的顶部和底部延伸的晶片边缘排除区域。可移除蚀刻限定环被配置为沿待蚀刻的晶片的顶部和底部的每一个限定独特的长度。表面的位置关系使得能够将蚀刻限制到排除区域的那些独特长度。

9. 发明授权

US10487574B2 Vehicle cover assembly 有权
公开(公告)号：US10487574B2
公开(公告)日：2019-11-26
申请号：US15652222
申请日：2017-07-17
申请人： Jack Chen
发明人： Jack Chen
IPC分类号： B60J11/00 , E06B9/80 , B60J11/02 , E05B65/00 , E04F10/06 , E05B37/02
CPC分类号： E06B9/80 , B60J11/02 , E04F10/06 , E04F10/0666 , E05B65/006 , E05B37/02 , E06B2009/802
摘要： A vehicle cover assembly has a body and a lock device. The body has a housing, a reeling device, and a cover fabric. The reeling device is mounted in the housing and has a reeling axle. The cover fabric is connected with and is selectively reeled around the reeling axle. The lock device has a casing, a pushing rod, and a lock cylinder. The casing is mounted on the housing. The pushing rod is moveably mounted through the casing and has an end selectively engaged with one end of the reeling axle. The lock cylinder is mounted in the casing and is selectively engaged with the pushing rod. When the lock cylinder is engaged with the pushing rod, the pushing rod is engaged with the reeling axle.

10. 发明授权

US10442514B2 Human powered watercraft or land vehicle 有权
公开(公告)号：US10442514B2
公开(公告)日：2019-10-15
申请号：US16164718
申请日：2018-10-18
申请人： Jack Chen
发明人： Jack Chen
IPC分类号： B63H16/18 , B60F3/00 , B63H23/04 , B63H23/02
摘要： A human powered watercraft or land vehicle is described herein. A watercraft or land vehicle may have two pedals that reciprocated are in a linear or slightly curved trajectory but not a circular motion. As the two pedals are reciprocated, an output shaft is rotated in either a clockwise or counterclockwise direction when the left pedal is pushed forward or when the right pedal is pushed forward. The output shaft may be connected to a propeller of a watercraft or a land vehicle so as to propel the watercraft or land vehicle forward. The output shaft may receive rotational input through two gears mounted to the output shaft with one-way bearings that enable the output shaft to rotate in the same direction regardless of whether the left pedal or the right pedal is being pushed forward.

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