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1. 发明授权

US09184028B2 Dual plasma volume processing apparatus for neutral/ion flux control 有权
标题翻译：用于中性/离子通量控制的双等离子体体积处理装置
公开(公告)号：US09184028B2
公开(公告)日：2015-11-10
申请号：US12850559
申请日：2010-08-04
申请人： Rajinder Dhindsa , Alexei Marakhatnov , Andrew D. Bailey, III
发明人： Rajinder Dhindsa , Alexei Marakhatnov , Andrew D. Bailey, III
IPC分类号： C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32449 , H01J37/32091 , H01J37/32697 , H01J37/32715 , H01J37/32834 , H01L21/67069 , H01L21/67259 , H01L21/6831 , H01L22/26
摘要： A semiconductor wafer processing apparatus includes a first electrode exposed to a first plasma generation volume, a second electrode exposed to a second plasma generation volume, and a gas distribution unit disposed between the first and second plasma generation volumes. The first electrode is defined to transmit radiofrequency (RF) power to the first plasma generation volume, and distribute a first plasma process gas to the first plasma generation volume. The second electrode is defined to transmit RF power to the second plasma generation volume, and hold a substrate in exposure to the second plasma generation volume. The gas distribution unit includes an arrangement of through-holes defined to fluidly connect the first plasma generation volume to the second plasma generation volume. The gas distribution unit also includes an arrangement of gas supply ports defined to distribute a second plasma process gas to the second plasma generation volume.
摘要翻译：半导体晶片处理装置包括暴露于第一等离子体产生体积的第一电极，暴露于第二等离子体产生体积的第二电极和设置在第一和第二等离子体产生体积之间的气体分配单元。第一电极被定义为将射频（RF）功率传送到第一等离子体产生体积，并且将第一等离子体处理气体分配到第一等离子体产生体积。第二电极被定义为将RF功率传送到第二等离子体产生体积，并且保持衬底暴露于第二等离子体产生体积。气体分配单元包括限定为将第一等离子体产生体积流体连接到第二等离子体产生体积的通孔的布置。气体分配单元还包括被定义为将第二等离子体处理气体分配到第二等离子体产生体积的气体供给端口的布置。

2. 发明授权

US08926789B2 Apparatus for the removal of a fluorinated polymer from a substrate 有权
标题翻译：用于从基材除去氟化聚合物的装置
公开(公告)号：US08926789B2
公开(公告)日：2015-01-06
申请号：US12750612
申请日：2010-03-30
申请人： Hyungsuk Alexander Yoon , John Boyd , Andras Kuthi , Andrew D. Bailey, III
发明人： Hyungsuk Alexander Yoon , John Boyd , Andras Kuthi , Andrew D. Bailey, III
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00 , H01L21/02 , B08B7/00
CPC分类号： H01L21/02087 , B08B7/0035
摘要： An apparatus generating a plasma for removing fluorinated polymer from a substrate is provided. The apparatus includes a powered electrode assembly, which includes a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The apparatus also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated. The first wire mesh is shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the fluorinated polymer.
摘要翻译：提供一种从衬底生成用于除去氟化聚合物的等离子体的装置。所述装置包括电源电极组件，其包括供电电极，第一电介质层和布置在所述电源电极和所述第一电介质层之间的第一电线网。该装置还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔。当空腔中存在等离子体时，第一电介质层通过第一电介质层屏蔽第一丝网，其在一端具有出口以提供等离子体以除去氟化聚合物。

3. 发明授权

US08764907B2 Servicing a plasma processing system with a robot 有权
标题翻译：用机器人维修等离子体处理系统
公开(公告)号：US08764907B2
公开(公告)日：2014-07-01
申请号：US12569674
申请日：2009-09-29
申请人： Andrew D. Bailey, III
发明人： Andrew D. Bailey, III
IPC分类号： B23P6/00 , B23P19/04
CPC分类号： B25J5/00 , B08B1/00 , B08B9/00 , H01J37/32743 , H01J37/32862 , H01L21/67751 , Y10T29/49723
摘要： A method for servicing a plasma processing system. The plasma processing system may include a plasma chamber. The plasma chamber may include a top piece and a bottom piece, wherein the top piece may be disposed above the bottom piece. The method may include using a robot device to control a lift mechanism to lift the top piece from the bottom piece. The method may also include extending a first member of the robot device into the top piece to perform a first set of tasks according to a first set of service procedures. The method may also include extending a second member of the robot device into the bottom piece to perform a second set of tasks according to a second set of service procedures.
摘要翻译：一种维修等离子体处理系统的方法。等离子体处理系统可以包括等离子体室。等离子体室可以包括顶部件和底部件，其中顶部件可以设置在底部件的上方。该方法可以包括使用机器人装置来控制提升机构以从底部件抬起顶部件。该方法还可以包括将机器人装置的第一部件延伸到顶部件中，以根据第一组服务程序执行第一组任务。该方法还可以包括将机器人装置的第二构件延伸到底部件中，以根据第二组服务程序执行第二组任务。

4. 发明授权

US08652298B2 Triode reactor design with multiple radiofrequency powers 有权
标题翻译：具有多个射频功率的三极管反应器设计
公开(公告)号：US08652298B2
公开(公告)日：2014-02-18
申请号：US13301725
申请日：2011-11-21
申请人： Rajinder Dhindsa , Alexei Marakhtanov , Gerardo Delgadino , Eric Hudson , Bi Ming Yen , Andrew D. Bailey, III
发明人： Rajinder Dhindsa , Alexei Marakhtanov , Gerardo Delgadino , Eric Hudson , Bi Ming Yen , Andrew D. Bailey, III
IPC分类号： C23F1/00
CPC分类号： H01J37/32091 , H01J37/32165
摘要： Methods, systems, and computer programs are presented for semiconductor manufacturing are provided. One wafer processing apparatus includes: a top electrode; a bottom electrode; a first radio frequency (RF) power source; a second RF power source; a third RF power source; a fourth RF power source; and a switch. The first, second, and third power sources are coupled to the bottom electrode. Further, the switch is operable to be in one of a first position or a second position, where the first position causes the top electrode to be connected to ground, and the second position causes the top electrode to be connected to the fourth RF power source.
摘要翻译：提供了半导体制造方法，系统和计算机程序。一个晶片处理装置包括：顶部电极; 底部电极; 第一射频（RF）电源; 第二RF电源; 第三射频电源; 第四RF电源; 和开关。第一，第二和第三电源耦合到底部电极。此外，开关可操作为处于第一位置或第二位置之一，其中第一位置使顶部电极连接到地，而第二位置使顶部电极连接到第四RF电源。

5. 发明申请

US20130122711A1 SYSTEM, METHOD AND APPARATUS FOR PLASMA SHEATH VOLTAGE CONTROL 审中-公开
标题翻译：用于等离子体电压控制的系统，方法和装置
公开(公告)号：US20130122711A1
公开(公告)日：2013-05-16
申请号：US13294053
申请日：2011-11-10
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01J37/32091 , H01J37/32165 , H01J37/32174
摘要： A system, method and apparatus for increasing an energy level of the ions emitted from a plasma include a plasma chamber, including a top electrode and a bottom electrode, a multiple RF sources, at least one of the RF sources being coupled to the bottom electrode. A phase locking circuit is coupled to at least two of the RF sources hereafter designated the first RF source and the second RF source. A controller is coupled to the plasma chamber, each of the RF sources and the phase locking circuit. The controller including operating system software, multiple logic circuits and a process recipe.
摘要翻译：用于增加从等离子体发射的离子的能量水平的系统，方法和装置包括等离子体室，包括顶部电极和底部电极，多个RF源，至少一个RF源耦合到底部电极。相位锁定电路耦合到以下称为第一RF源和第二RF源的至少两个RF源。控制器耦合到等离子体室，每个RF源和锁相电路。该控制器包括操作系统软件，多个逻辑电路和一个过程配方。

6. 发明申请

US20130023064A1 Negative Ion Control for Dielectric Etch 有权
标题翻译：介质蚀刻负离子控制
公开(公告)号：US20130023064A1
公开(公告)日：2013-01-24
申请号：US13188421
申请日：2011-07-21
申请人： Alexei Marakhtanov , Mirzafer K. Abatchev , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
发明人： Alexei Marakhtanov , Mirzafer K. Abatchev , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
IPC分类号： H01L21/66 , H01L21/3065
CPC分类号： H01L21/67069 , C23C14/345 , C23C16/505 , H01J37/32091 , H01J37/32137 , H01J2237/334 , H01J2237/3343 , H01J2237/3348 , H01L21/3065 , H01L21/31116 , H01L22/20 , H05H2001/4675
摘要： Apparatus, methods, and computer programs for semiconductor processing in a capacitively-coupled plasma chamber are provided. A chamber includes a bottom radio frequency (RF) signal generator, a top RF signal generator, and an RF phase controller. The bottom RF signal generator is coupled to the bottom electrode in the chamber, and the top RF signal generator is coupled to the top electrode. Further, the bottom RF signal is set at a first phase, and the top RF signal is set at a second phase. The RF phase controller is operable to receive the bottom RF signal and operable to set the value of the second phase. Additionally, the RF phase controller is operable to track the first phase and the second phase to maintain a time difference between the maximum of the top RF signal and the minimum of the bottom RF signal at approximately a predetermined constant value, resulting in an increase of the negative ion flux to the surface of the wafer.
摘要翻译：提供了在电容耦合等离子体室中用于半导体处理的装置，方法和计算机程序。腔室包括底部射频（RF）信号发生器，顶部RF信号发生器和RF相位控制器。底部RF信号发生器耦合到室中的底部电极，并且顶部RF信号发生器耦合到顶部电极。此外，底部RF信号被设置在第一相位，并且顶部RF信号被设置在第二阶段。 RF相位控制器可操作以接收底部RF信号并且可操作以设置第二相位的值。此外，RF相位控制器可操作以跟踪第一相位和第二相位，以保持最大RF信号的最大值与底部RF信号的最小值之间的时间差大约为预定的常数值，导致增加到晶片表面的负离子通量。

7. 发明申请

US20120273134A1 Bevel Edge Plasma Chamber With Top and Bottom Edge Electrodes 有权
标题翻译：具有顶部和底部电极的斜边等离子体室
公开(公告)号：US20120273134A1
公开(公告)日：2012-11-01
申请号：US13547700
申请日：2012-07-12
申请人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi
发明人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi
IPC分类号： B08B13/00
CPC分类号： H01L21/02087 , B08B7/0035 , H01J37/32091 , H01J37/32174 , H01J37/32541 , H01L21/67069
摘要： A plasma processing chamber configured for cleaning a bevel edge of a substrate is provided. The chamber includes a top edge electrode surrounding an insulating plate, and the insulator plate opposes a bottom electrode. The top edge electrode is electrically grounded and separated from the insulator plate by a top dielectric ring. The chamber also includes a bottom edge electrode that is electrically grounded and surrounds the bottom electrode and is separated from the bottom electrode by a bottom dielectric ring. The bottom edge electrode is oriented to oppose the top edge electrode, and the bottom edge electrode has an L shape that is up-facing. Bevel edge plasma processing of a substrate edge is configured to be processed in a chamber having the top and bottom edge electrodes.
摘要翻译：提供了一种用于清洁基板的斜边缘的等离子体处理室。该室包括围绕绝缘板的顶边电极，绝缘体板与底部电极相对。顶边电极通过顶部介质环电接地并与绝缘体板分离。该腔室还包括底部电极，其电接地并且围绕底部电极并且通过底部介电环与底部电极分离。底边电极被定向为与顶边缘电极相对，并且底边电极具有面向上的L形。衬底边缘的斜边等离子体处理被配置为在具有顶部和底部边缘电极的腔室中进行处理。

8. 发明授权

US08257503B2 Method and apparatus for detecting plasma unconfinement 有权
标题翻译：用于检测等离子体无约束的方法和装置
公开(公告)号：US08257503B2
公开(公告)日：2012-09-04
申请号：US12114681
申请日：2008-05-02
申请人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
发明人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
IPC分类号： C25F3/30
CPC分类号： H01L21/67069 , G01N21/68 , H01L21/67028 , H01L21/67253
摘要： A method for detecting plasma unconfinement in a reaction chamber during a bevel edge cleaning operation is provided. The method initiates with selecting a wavelength associated with expected by products of a bevel edge clean process. The method includes cleaning the bevel edge area of a substrate and monitoring the intensity of the selected wavelengths during the cleaning for deviation from a threshold wavelength intensity. The cleaning is terminated if the deviation from the threshold wavelength intensity exceeds a target deviation.
摘要翻译：提供了一种用于在斜边清洁操作期间检测反应室中的等离子体无约束的方法。该方法通过选择与倾斜边缘清洁过程的产品预期相关联的波长来启动。该方法包括清洁衬底的斜边缘区域并在清洁期间监测所选波长的强度以偏离阈值波长强度。如果偏离阈值波长强度超过目标偏差，则清除结束。

9. 发明授权

US08083890B2 Gas modulation to control edge exclusion in a bevel edge etching plasma chamber 有权
标题翻译：气体调制，用于控制斜边蚀刻等离子体室中的边缘排除
公开(公告)号：US08083890B2
公开(公告)日：2011-12-27
申请号：US12021177
申请日：2008-01-28
申请人： Tong Fang , Yunsang Kim , Andrew D. Bailey, III , Olivier Rigoutat , George Stojakovic
发明人： Tong Fang , Yunsang Kim , Andrew D. Bailey, III , Olivier Rigoutat , George Stojakovic
IPC分类号： C23F1/00 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/68
CPC分类号： H01J37/32449 , H01J37/32091 , H01J2237/3341 , H01L21/02087
摘要： The various embodiments provide apparatus and methods of removal of unwanted deposits near the bevel edge of substrates to improve process yield. The embodiments provide apparatus and methods with center and edge gas feeds as additional process knobs for selecting a most suitable bevel edge etching processes to push the edge exclusion zone further outward towards the edge of substrates. Further the embodiments provide apparatus and methods with tuning gas(es) to change the etching profile at the bevel edge and using a combination of center and edge gas feeds to flow process and tuning gases into the chamber. Both the usage of tuning gas and location of gas feed(s) affect the etching characteristics at bevel edge. Total gas flow, gap distance between the gas delivery plate and substrate surface, pressure, and types of process gas(es) are also found to affect bevel edge etching profiles.
摘要翻译：各种实施例提供了在基板的斜边缘附近去除不需要的沉积物以提高工艺产量的装置和方法。这些实施例提供了具有中心和边缘气体进料作为附加过程旋钮的设备和方法，用于选择最合适的斜面边缘蚀刻工艺，以将边缘排除区域进一步朝向衬底边缘向外推动。此外，实施例提供了具有调节气体以改变斜面边缘处的蚀刻轮廓的装置和方法，并且使用中心和边缘气体进料的组合来流动过程并将气体调谐到腔室中。调节气体的使用和气体进料的位置都影响斜边处的蚀刻特性。总气体流量，气体输送板和基底表面之间的间隙距离，压力和工艺气体的类型也被发现影响斜面边缘蚀刻轮廓。

10. 发明申请

US20110209725A1 METHODS TO REMOVE FILMS ON BEVEL EDGE AND BACKSIDE OF WAFER AND APPARATUS THEREOF 有权
标题翻译：方法移除水平边缘和背面的薄膜及其装置
公开(公告)号：US20110209725A1
公开(公告)日：2011-09-01
申请号：US13053037
申请日：2011-03-21
申请人： Yunsang Kim , Andrew D. Bailey, III
发明人： Yunsang Kim , Andrew D. Bailey, III
IPC分类号： B08B7/00
CPC分类号： H01J37/32532 , H01J37/32357 , H01J37/3244 , H01J37/32862
摘要： A method of cleaning a bevel edge of a substrate in an etch processing chamber is provided. The method includes placing a substrate on a substrate support in a processing chamber. The method also includes flowing a cleaning gas through a gas feed located near a center of a gas distribution plate, disposed at a distance from the substrate support. The method further includes generating a cleaning plasma near a bevel edge of the substrate to clean the bevel edge by powering a bottom edge electrode or a top edge electrode with a RF power source and grounding the edge electrode that is not powered by the RF power source, the bottom edge electrode surrounds the substrate support and the top edge electrode surrounds the gas distribution plate.
摘要翻译：提供了一种在蚀刻处理室中清洁衬底的斜边缘的方法。该方法包括将衬底放置在处理室中的衬底支撑件上。该方法还包括使清洁气体流过设置在与衬底支撑件相距一定距离处的气体分配板的中心附近的气体进料。该方法还包括在衬底的斜边缘附近产生清洁等离子体，以通过用RF电源为底部边缘电极或顶部边缘电极供电来清洁斜面边缘，并且将不由RF电源供电的边缘电极接地底部边缘电极围绕基板支撑件，并且顶部边缘电极围绕气体分配板。

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