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1. 发明申请

US20070068623A1 Apparatus for the removal of a set of byproducts from a substrate edge and methods therefor 审中-公开
标题翻译：用于从基板边缘去除一组副产品的设备及其方法
公开(公告)号：US20070068623A1
公开(公告)日：2007-03-29
申请号：US11237327
申请日：2005-09-27
申请人： Yunsang Kim , Andrew Bailey , Hyungsuk Yoon
发明人： Yunsang Kim , Andrew Bailey , Hyungsuk Yoon
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/02087 , H01J37/321 , H01J37/32623
摘要： A plasma processing system including a plasma chamber for processing a substrate is disclosed. The apparatus includes a chuck configured for supporting a first surface of the substrate. The apparatus also includes a plasma resistant barrier disposed in a spaced-apart relationship with respect to a second surface of the substrate, the second surface being opposite the first surface, the plasma resistant barrier substantially shielding a center portion of the substrate and leaving an annular periphery area of the second surface of the substrate substantially unshielded by the plasma resistant barrier. The apparatus further includes at least one powered electrode, the powered electrode operating cooperatively with the plasma resistant barrier to generate confined plasma from a plasma gas, the confined plasma being substantially confined to the annular periphery portion of the substrate and away from the center portion of the substrate.
摘要翻译：公开了一种包括用于处理衬底的等离子体室的等离子体处理系统。该装置包括配置用于支撑基板的第一表面的卡盘。该装置还包括等离子体阻挡屏障，其相对于衬底的第二表面以间隔开的关系设置，第二表面与第一表面相对，等离子体阻挡屏障基本上屏蔽衬底的中心部分并留下环形衬底的第二表面的周边区域基本上不受等离子体阻挡屏障的屏蔽。所述设备还包括至少一个动力电极，所述动力电极与所述等离子体阻挡屏障协同工作以从等离子体气体产生约束等离子体，所述受限等离子体基本上限制在所述衬底的环形周边部分并且远离所述衬底的中心部分底物。

2. 发明申请

US20060128152A1 Plasma oxidation and removal of oxidized material 失效
公开(公告)号：US20060128152A1
公开(公告)日：2006-06-15
申请号：US11076725
申请日：2005-03-09
申请人： Yunsang Kim , Andrew Bailey , Hyungsuk Yoon , Arthur Howald
发明人： Yunsang Kim , Andrew Bailey , Hyungsuk Yoon , Arthur Howald
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/32136 , H01L21/31683 , H01L21/321 , H01L21/32115 , H01L21/32135 , H01L21/32138 , H01L21/32139 , H01L21/7684 , H01L21/76865 , H01L21/76885
摘要： A method of etching a conductive layer includes converting at least a portion of the conductive layer and etching the conductive layer to substantially remove the converted portion of the conductive layer and thereby expose a remaining surface. The remaining surface has an average surface roughness of less than about 10 nm. A system for etching a conductive layer is also disclosed.

3. 发明授权

US09275838B2 Arrangements for manipulating plasma confinement within a plasma processing system and methods thereof 有权
标题翻译：在等离子体处理系统中操纵等离子体约束的布置及其方法
公开(公告)号：US09275838B2
公开(公告)日：2016-03-01
申请号：US12552474
申请日：2009-09-02
申请人： Eller Y. Juco , Neungho Shin , Yunsang Kim , Andrew Bailey
发明人： Eller Y. Juco , Neungho Shin , Yunsang Kim , Andrew Bailey
IPC分类号： H01J37/32
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32541 , H01J37/32568 , H01J37/32706 , H01J2237/334
摘要： An arrangement for controlling bevel etch rate during plasma processing within a processing chamber. The arrangement includes a power source and a gas distribution system. The arrangement also includes a lower electrode, which is configured at least for supporting a substrate. The arrangement further includes a top ring electrode positioned above the substrate and a bottom ring electrode positioned below the substrate. The arrangement yet also includes a first match arrangement coupled to the top ring electrode and configured at least for controlling current flowing through the top ring electrode to control amount of plasma available for etching at least a part of the substrate top edge. The arrangement yet further includes a second match arrangement configured to control the current flowing through the bottom ring electrode to control amount of plasma available for at least etching at least a part of the substrate bottom edge.
摘要翻译：一种用于在处理室内的等离子体处理期间控制斜面蚀刻速率的装置。该装置包括电源和气体分配系统。该布置还包括下电极，其被配置为至少用于支撑衬底。该布置还包括位于基板上方的顶环电极和位于基板下方的底环电极。该布置还包括耦合到顶环电极并且被配置为至少用于控制流过顶环电极的电流以控制可用于蚀刻衬底顶部边缘的至少一部分的等离子体的第一匹配布置。该装置还包括第二匹配装置，其被配置为控制流过底环电极的电流以控制可用于至少蚀刻至少一部分衬底底边缘的等离子体的量。

4. 发明申请

US20080190448A1 BEVEL CLEAN DEVICE 有权
标题翻译：水清洁装置
公开(公告)号：US20080190448A1
公开(公告)日：2008-08-14
申请号：US11672922
申请日：2007-02-08
申请人： Yunsang Kim , Andrew Bailey , Greg Sexton , Keechan Kim , Andras Kuthi
发明人： Yunsang Kim , Andrew Bailey , Greg Sexton , Keechan Kim , Andras Kuthi
IPC分类号： B08B6/00
CPC分类号： H01L21/02087
摘要： An apparatus for removing material on a bevel of a wafer is provided. A wafer support with a diameter that is less than the diameter of the wafer, wherein the wafer support is on a first side of the wafer, and wherein an outer edge of the wafer extends beyond the wafer support around the wafer is provided. An RF power source is electrically connected to the wafer. A central cover is spaced apart from the wafer support. A first electrically conductive ring is on the first side of and spaced apart from the wafer. A second electrically conductive ring is spaced apart from the wafer. An electrically conductive liner surrounds the outer edge of the wafer. A switch is between the liner and ground, allowing the liner to be switched from being grounded to floating.
摘要翻译：提供了用于在晶片的斜面上去除材料的设备。提供直径小于晶片直径的晶片支架，其中所述晶片支撑件位于所述晶片的第一侧上，并且其中所述晶片的外边缘延伸超过所述晶片支撑件围绕所述晶片。 RF电源电连接到晶片。中心盖与晶片支撑件间隔开。第一导电环位于晶片的第一侧并与晶片间隔开。第二导电环与晶片间隔开。导电衬套围绕晶片的外边缘。开关在衬垫和接地之间，允许衬管从接地切换到浮动。

5. 发明申请

US20080050923A1 Low-k damage avoidance during bevel etch processing 有权
标题翻译：斜角蚀刻加工过程中的低k损伤避免
公开(公告)号：US20080050923A1
公开(公告)日：2008-02-28
申请号：US11510309
申请日：2006-08-25
申请人： Yunsang Kim , Andrew Bailey , Jack Chen
发明人： Yunsang Kim , Andrew Bailey , Jack Chen
IPC分类号： H01L21/461 , H01L21/302 , C03C25/68
CPC分类号： H01L21/02041 , H01L21/02087 , H01L21/31116 , H01L21/31138 , H01L21/67069 , H01L21/6833
摘要： A method for etching a bevel edge of a substrate is provided. A patterned photoresist mask is formed over the etch layer. The bevel edge is cleaned comprising providing a cleaning gas comprising at least one of a CO2, CO, CxHy, H2, NH3, CxHyFz and a combination thereof, forming a cleaning plasma from the cleaning gas, and exposing the bevel edge to the cleaning plasma. Features are etched into the etch layer through the photoresist features and the photoresist mask is removed.
摘要翻译：提供了蚀刻基板的斜边缘的方法。在蚀刻层上形成图案化的光致抗蚀剂掩模。所述斜边缘被清洁，包括提供清洁气体，所述清洁气体包括CO 2，CO，C，H，H，H， > 2，NH 3，C x H，Y z和它们的组合，形成来自清洁气体的清洁等离子体，并将斜面边缘暴露于清洁等离子体。通过光致抗蚀剂特征将特征蚀刻到蚀刻层中，并去除光致抗蚀剂掩模。

6. 发明申请

US20070048447A1 SYSTEM AND METHOD FOR FORMING PATTERNED COPPER LINES THROUGH ELECTROLESS COPPER PLATING 审中-公开
标题翻译：通过电镀铜镀层形成图案铜线的系统和方法
公开(公告)号：US20070048447A1
公开(公告)日：2007-03-01
申请号：US11461415
申请日：2006-07-31
申请人： Alan Lee , Andrew Bailey , William Thie , Yunsang Kim , Yezdi Dordi
发明人： Alan Lee , Andrew Bailey , William Thie , Yunsang Kim , Yezdi Dordi
IPC分类号： B05D3/10 , B05D1/32 , C23C16/00
CPC分类号： H05K3/184 , C23C18/1605 , C23C18/1642 , C23C18/1669 , C23C18/1879 , C23C18/1882 , C23C18/38 , C23C18/40 , H05K3/064 , H05K2203/0571 , H05K2203/072 , H05K2203/087
摘要： A method for forming copper on a substrate including inputting a copper source solution into a mixer, inputting a reducing solution into the mixer, mixing copper source solution and the reducing solution to form a plating solution having a pH of greater than about 6.5 and applying the plating solution to a substrate, the substrate including a catalytic layer wherein applying the plating solution to the substrate includes forming a catalytic layer, maintaining the catalytic layer in a controlled environment and forming copper on the catalytic layer. A system for forming copper structures is also disclosed.
摘要翻译：一种在基板上形成铜的方法，包括将铜源溶液输入到混合器中，将还原溶液输入到混合器中，将铜源溶液和还原溶液混合以形成pH大于约6.5的电镀溶液，电镀溶液到基板上，所述基板包括催化层，其中将所述电镀液施加到所述基板上包括形成催化剂层，将所述催化剂层保持在受控环境中并在所述催化层上形成铜。还公开了一种用于形成铜结构的系统。

7. 发明申请

US20050093012A1 System, method and apparatus for self-cleaning dry etch 有权
标题翻译：用于自清洁干蚀刻的系统，方法和设备
公开(公告)号：US20050093012A1
公开(公告)日：2005-05-05
申请号：US10802460
申请日：2004-03-16
申请人： Andrew Bailey , Shrikant Lohokare , Arthur Howald , Yunsang Kim
发明人： Andrew Bailey , Shrikant Lohokare , Arthur Howald , Yunsang Kim
IPC分类号： H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/321 , H01L21/3213 , H01L21/44 , H01L21/461 , H01L21/4763 , H01L21/768 , H01L23/48 , H01L23/52 , H01L29/24 , H01L29/40 , H01L33/00
CPC分类号： B08B7/00 , B08B7/0035 , B08B7/0071 , H01J37/3244 , H01J37/32522 , H01J37/32862 , H01J2237/022 , H01L21/3065 , H01L21/32115 , H01L21/32136 , H01L21/67034 , H01L21/67051 , H01L21/67069 , H01L21/6708 , H01L21/7684 , Y10S438/905
摘要： A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.
摘要翻译：一种用于清洁处理室的方法，包括将处理室的内表面加热至第一温度。第一个温度足以使第一个物质变得挥发。第一种可以是沉积在内表面上的几种物质之一。将清洁化学品注入到处理室中。清洁化学品可以与第二种物质反应以将第二种类转化为第一种。挥发的第一种也可以从处理室输出。还描述了用于清洁处理室的系统。

8. 发明申请

US20070068900A1 Apparatus and methods to remove films on bevel edge and backside of wafer 有权
标题翻译：在晶圆的斜边缘和背面去除薄膜的装置和方法
公开(公告)号：US20070068900A1
公开(公告)日：2007-03-29
申请号：US11440561
申请日：2006-05-24
申请人： Yunsang Kim , Andrew Bailey
发明人： Yunsang Kim , Andrew Bailey
IPC分类号： C23F1/00
CPC分类号： H01J37/32532 , H01J37/32357 , H01J37/3244 , H01J37/32862
摘要： Improved mechanisms of removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and etch byproducts on substrate backside and chamber interior is provided to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. An exemplary plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode surrounding a substrate support in the plasma processing chamber, wherein the substrate support is configured to receive the substrate and the bottom edge electrode and the substrate support are electrically isolated from each other by a bottom dielectric ring. The chamber also includes a top edge electrode surrounding a gas distribution plate opposing the substrate support, wherein the top edge electrode and the gas distribution plate are electrically isolated from each other by a top dielectric ring, and the top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate.
摘要翻译：提供了去除蚀刻副产物，电介质膜和金属薄膜附近基板斜边缘的改进机理，以及衬底背面和腔室内部的蚀刻副产物，以避免聚合物副产物和沉积膜的堆积并提高工艺产率。提供了一种构造成清洁衬底的斜边缘的示例性等离子体蚀刻处理室。所述腔室包括围绕所述等离子体处理室中的衬底支撑件的底部边缘电极，其中所述衬底支撑件构造成接收所述衬底，并且所述底部边缘电极和所述衬底支撑件通过底部电介质环彼此电隔离。该室还包括围绕与衬底支撑件相对的气体分配板的顶部边缘电极，其中顶部边缘电极和气体分配板通过顶部介电环彼此电隔离，并且顶部边缘电极和底部边缘电极被配置为产生清洁等离子体以清洁基板的斜边缘。

9. 发明申请

US20060219267A1 System, method and apparatus for self-cleaning dry etch 有权
标题翻译：用于自清洁干蚀刻的系统，方法和设备
公开(公告)号：US20060219267A1
公开(公告)日：2006-10-05
申请号：US11444942
申请日：2006-05-31
申请人： Andrew Bailey , Shrikant Lohokare , Arthur Howald , Yunsang Kim
发明人： Andrew Bailey , Shrikant Lohokare , Arthur Howald , Yunsang Kim
IPC分类号： B08B9/00
CPC分类号： B08B7/00 , B08B7/0035 , B08B7/0071 , H01J37/3244 , H01J37/32522 , H01J37/32862 , H01J2237/022 , H01L21/3065 , H01L21/32115 , H01L21/32136 , H01L21/67034 , H01L21/67051 , H01L21/67069 , H01L21/6708 , H01L21/7684 , Y10S438/905
摘要： A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.
摘要翻译：一种用于清洁处理室的方法，包括将处理室的内表面加热至第一温度。第一个温度足以使第一个物质变得挥发。第一种可以是沉积在内表面上的几种物质之一。将清洁化学品注入到处理室中。清洁化学品可以与第二种物质反应以将第二种类转化为第一种。挥发的第一种也可以从处理室输出。还描述了用于清洁处理室的系统。

10. 发明申请

US20110049101A1 ARRANGEMENTS FOR MANIPULATING PLASMA CONFINEMENT WITHIN A PLASMA PROCESSING SYSTEM AND METHODS THEREOF 有权
标题翻译：用于在等离子体处理系统中操纵等离子体配置的装置及其方法
公开(公告)号：US20110049101A1
公开(公告)日：2011-03-03
申请号：US12552474
申请日：2009-09-02
申请人： Eller Y. Juco , Neungho Shin , Yunsang Kim , Andrew Bailey
发明人： Eller Y. Juco , Neungho Shin , Yunsang Kim , Andrew Bailey
IPC分类号： C23F1/00
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32541 , H01J37/32568 , H01J37/32706 , H01J2237/334
摘要： An arrangement for controlling bevel etch rate during plasma processing within a processing chamber. The arrangement includes a power source and a gas distribution system. The arrangement also includes a lower electrode, which is configured at least for supporting a substrate. The arrangement further includes a top ring electrode positioned above the substrate and a bottom ring electrode positioned below the substrate. The arrangement yet also includes a first match arrangement coupled to the top ring electrode and configured at least for controlling current flowing through the top ring electrode to control amount of plasma available for etching at least a part of the substrate top edge. The arrangement yet further includes a second match arrangement configured to control the current flowing through the bottom ring electrode to control amount of plasma available for at least etching at least a part of the substrate bottom edge.
摘要翻译：一种用于在处理室内的等离子体处理期间控制斜面蚀刻速率的装置。该装置包括电源和气体分配系统。该布置还包括下电极，其被配置为至少用于支撑衬底。该布置还包括位于基板上方的顶环电极和位于基板下方的底环电极。该布置还包括耦合到顶环电极并且被配置为至少用于控制流过顶环电极的电流以控制可用于蚀刻衬底顶部边缘的至少一部分的等离子体的第一匹配布置。该装置还包括第二匹配装置，其被配置为控制流过底环电极的电流以控制可用于至少蚀刻至少一部分衬底底边缘的等离子体的量。

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