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    • 5. 发明授权
    • Power switching circuit
    • 电源开关电路
    • US07577052B2
    • 2009-08-18
    • US11638187
    • 2006-12-13
    • Jui-Jen WuKun-Lung ChenHung-Jen LiaoYung-Lung LinChen Yen-HueiDao-Ping Wang
    • Jui-Jen WuKun-Lung ChenHung-Jen LiaoYung-Lung LinChen Yen-HueiDao-Ping Wang
    • G11C5/10
    • G11C11/412G11C11/413
    • A power control circuit for an integrated circuit module includes at least one switch device coupled between a supply voltage and a power node of the integrated circuit module; and a switch control module having a first terminal coupled to the switch device, a second terminal coupled to a control signal, a third terminal coupled to a first storage node of at least one tracking cell, a fourth terminal coupled to a second storage node of the tracking cell, and a fifth terminal coupled to the power node of the integrated circuit module, for controlling the switch device to pass the supply voltage to the power node with or without a substantial voltage drop depending on an operation mode of the integrated circuit module.
    • 用于集成电路模块的功率控制电路包括耦合在电源电压和集成电路模块的功率节点之间的至少一个开关装置; 以及开关控制模块,其具有耦合到所述开关装置的第一端子,耦合到控制信号的第二端子,耦合到至少一个跟踪单元的第一存储节点的第三端子,耦合到所述至少一个跟踪单元的第二存储节点的第四端子 跟踪单元和耦合到集成电路模块的功率节点的第五端子,用于根据集成电路模块的操作模式控制开关装置将电源电压传递到功率节点,具有或不具有实质的电压降 。
    • 7. 发明授权
    • Method and apparatus for high efficiency redundancy scheme for multi-segment SRAM
    • 用于多段SRAM高效冗余方案的方法和装置
    • US07505319B2
    • 2009-03-17
    • US11669667
    • 2007-01-31
    • Jui-Jen WuYung-Lung LinYen-Huei ChenDao-Ping Wang
    • Jui-Jen WuYung-Lung LinYen-Huei ChenDao-Ping Wang
    • G11C11/34
    • G11C29/808
    • The disclosure generally relates to a method and apparatus for a high efficiency redundancy scheme for a memory system. In one embodiment, the disclosure relates to a memory circuit having: a memory array defined by a plurality of memory cells arranged in one or more columns and one or more rows, each memory cell communicating with one of a pair of complementary bit-lines and with a word-line; a plurality of IO circuits, each IO circuit associated with one of the plurality of memory cell columns; a plurality of redundant bit-lines, each redundant bit line communicating with a redundant bit cell; a first circuit for detecting a defective memory cell in said memory circuit; a second circuit for selecting one of the plurality of redundant bit-lines for switching from the failed memory cell to the redundant memory cell; and a third circuit for directing a word-line pulse of said defective memory cell to said selected redundant memory cell.
    • 本公开一般涉及用于存储器系统的高效冗余方案的方法和装置。 在一个实施例中,本公开涉及一种存储器电路,其具有:由多个存储单元限定的存储器阵列,所述多个存储器单元被布置成一列或多列和一行或多行,每个存储器单元与一对互补位线中的一个通信, 用字线; 多个IO电路,与所述多个存储单元列之一相关联的每个IO电路; 多个冗余位线,每个冗余位线与冗余位单元通信; 用于检测所述存储电路中的有缺陷的存储单元的第一电路; 用于选择所述多个冗余位线中的一个用于从所述故障存储器单元切换到所述冗余存储器单元的第二电路; 以及用于将所述有缺陷的存储器单元的字线脉冲引导到所述选择的冗余存储单元的第三电路。
    • 8. 发明授权
    • Multi-state electrical fuse
    • 多态电保险丝
    • US07271644B2
    • 2007-09-18
    • US11328780
    • 2006-01-10
    • Yung-Lung LinJui-Jen WuHung-Jen Liao
    • Yung-Lung LinJui-Jen WuHung-Jen Liao
    • H01H37/76H01H85/00
    • G11C11/56G11C17/18
    • An integrated circuit for programming an electrical fuse includes a first programming device coupled to the electrical fuse for selectively providing the same with a first programming current, and a second programming device coupled to the electrical fuse for selectively providing the same with a second programming current. A detection module is coupled to the electrical fuse for generating an output indicating a resistance level of the electrical fuse, wherein the resistance level has three or more predetermined states, which are provided by selectively programming the electrical fuse with the first or second programming current.
    • 用于编程电熔丝的集成电路包括耦合到电熔丝的第一编程装置,用于选择性地为其提供第一编程电流;以及耦合到电熔丝的第二编程装置,用于选择性地将其提供给第二编程电流。 检测模块耦合到电熔丝,用于产生指示电熔丝的电阻电平的输出,其中电阻电平具有三个或更多个预定状态,这些状态通过用第一或第二编程电流选择性地编程电熔丝来提供。
    • 9. 发明申请
    • METHOD AND APPARATUS FOR HIGH EFFICIENCY REDUNDANCY SCHEME FOR MULTI-SEGMENT SRAM
    • 多部分SRAM高效冗余方案的方法与装置
    • US20080184064A1
    • 2008-07-31
    • US11669667
    • 2007-01-31
    • Jui-Jen WuYung-Lung LinYen-Huei ChenDao-Ping Wang
    • Jui-Jen WuYung-Lung LinYen-Huei ChenDao-Ping Wang
    • G06F11/16
    • G11C29/808
    • The disclosure generally relates to a method and apparatus for a high efficiency redundancy scheme for a memory system. In one embodiment, the disclosure relates to a memory circuit having: a memory array defined by a plurality of memory cells arranged in one or more columns and one or more rows, each memory cell communicating with one of a pair of complementary bit-lines and with a word-line; a plurality of IO circuits, each IO circuit associated with one of the plurality of memory cell columns; a plurality of redundant bit-lines, each redundant bit line communicating with a redundant bit cell; a first circuit for detecting a defective memory cell in said memory circuit; a second circuit for selecting one of the plurality of redundant bit-lines for switching from the failed memory cell to the redundant memory cell; and a third circuit for directing a word-line pulse of said defective memory cell to said selected redundant memory cell.
    • 本公开一般涉及用于存储器系统的高效冗余方案的方法和装置。 在一个实施例中,本公开涉及一种存储器电路,其具有:由多个存储单元限定的存储器阵列,所述多个存储器单元被布置成一列或多列和一行或多行,每个存储器单元与一对互补位线中的一个通信, 用字线; 多个IO电路,与所述多个存储单元列之一相关联的每个IO电路; 多个冗余位线,每个冗余位线与冗余位单元通信; 用于检测所述存储器电路中的有缺陷的存储单元的第一电路; 用于选择所述多个冗余位线中的一个用于从所述故障存储器单元切换到所述冗余存储器单元的第二电路; 以及用于将所述有缺陷的存储器单元的字线脉冲引导到所述选择的冗余存储单元的第三电路。