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    • 2. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 半导体器件及其制造方法
    • US20080079086A1
    • 2008-04-03
    • US11831069
    • 2007-07-31
    • Hyung-suk JungJong-ho LeeSung-kee HanHo LeeHa-jin Lim
    • Hyung-suk JungJong-ho LeeSung-kee HanHo LeeHa-jin Lim
    • H01L21/336H01L27/085
    • H01L21/823807
    • A semiconductor device and a method of manufacturing the semiconductor device, in which the semiconductor device includes a semiconductor substrate in which PMOS transistor regions and NMOS transistor regions are formed, a PMOS transistor including P-type source and drain regions and a gate electrode, and an NMOS transistor formed on an Si channel region between N-type source and drain regions. The PMOS transistor is formed in each PMOS transistor region, and the gate electrode is formed on a high-dielectric gate insulating film formed on an SiGe channel region between the P-type source and drain regions. Further, the NMOS transistor includes a high-dielectric gate insulating film and a gate electrode formed on the gate insulating film, and the NMOS transistor is formed in each NMOS transistor region.
    • 一种半导体器件和半导体器件的制造方法,其中半导体器件包括其中形成有PMOS晶体管区域和NMOS晶体管区域的半导体衬底,包括P型源极和漏极区域的PMOS晶体管和栅极电极,以及 形成在N型源区和漏区之间的Si沟道区上的NMOS晶体管。 PMOS晶体管形成在每个PMOS晶体管区域中,并且栅电极形成在形成在P型源区和漏区之间的SiGe沟道区上的高电介质栅极绝缘膜上。 此外,NMOS晶体管包括高电介质栅极绝缘膜和形成在栅极绝缘膜上的栅电极,并且NMOS晶体管形成在每个NMOS晶体管区域中。