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1. 发明授权

US07611973B2 Methods of selectively forming epitaxial semiconductor layer on single crystalline semiconductor and semiconductor devices fabricated using the same 有权
标题翻译：在使用其制造的单晶半导体和半导体器件上选择性地形成外延半导体层的方法
公开(公告)号：US07611973B2
公开(公告)日：2009-11-03
申请号：US11154236
申请日：2005-06-16
申请人： Dong-Suk Shin , Hwa-Sung Rhee , Tetsuji Ueno , Ho Lee , Seung-Hwan Lee
发明人： Dong-Suk Shin , Hwa-Sung Rhee , Tetsuji Ueno , Ho Lee , Seung-Hwan Lee
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/28044 , H01L21/02378 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02636 , H01L29/66628 , H01L29/66772
摘要： In methods of selectively forming an epitaxial semiconductor layer on a single crystalline semiconductor and semiconductor devices fabricated using the same, a single crystalline epitaxial semiconductor layer and a non-single crystalline epitaxial semiconductor layer are formed on a single crystalline semiconductor and a non-single crystalline semiconductor pattern respectively, using a main semiconductor source gas and a main etching gas. The non-single crystalline epitaxial semiconductor layer is removed using a selective etching gas. The main gases and the selective etching gas are alternately and repeatedly supplied at least two times to selectively form an elevated single crystalline epitaxial semiconductor layer having a desired thickness only on the single crystalline semiconductor. The selective etching gas suppresses formation of an epitaxial semiconductor layer on the non-single crystalline semiconductor pattern.
摘要翻译：在单晶半导体上选择性地形成外延半导体层的方法和使用其制造的半导体器件的方法中，单晶外延半导体层和非单晶外延半导体层形成在单晶半导体和非单晶半导体图案，分别使用主半导体源气体和主蚀刻气体。使用选择性蚀刻气体去除非单晶外延半导体层。主要气体和选择性蚀刻气体交替地和重复地供应至少两次以选择性地形成仅在单晶半导体上具有期望厚度的升高的单晶外延半导体层。选择性蚀刻气体抑制在非单晶半导体图案上形成外延半导体层。

2. 发明申请

US20060131656A1 CMOS semiconductor devices having elevated source and drain regions and methods of fabricating the same 有权
标题翻译：具有升高的源极和漏极区域的CMOS半导体器件及其制造方法
公开(公告)号：US20060131656A1
公开(公告)日：2006-06-22
申请号：US11285978
申请日：2005-11-23
申请人： Dong-Suk Shin , Hwa-Sung Rhee , Tetsuji Ueno , Ho Lee , Seung-Hwan Lee
发明人： Dong-Suk Shin , Hwa-Sung Rhee , Tetsuji Ueno , Ho Lee , Seung-Hwan Lee
IPC分类号： H01L29/94
CPC分类号： H01L29/7834 , H01L21/265 , H01L21/823807 , H01L21/823814 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/66628
摘要： A Complementary Metal Oxide Semiconductor (CMOS) device is provided. The CMOS device includes an isolation layer provided in a semiconductor substrate to define first and second active regions. First and second gate patterns are disposed to cross over the first and second active regions, respectively. A first elevated source region and a first elevated drain region are disposed at both sides of the first gate pattern respectively, and a second elevated source region and a second elevated drain region are disposed at both sides of the second gate pattern respectively. The first elevated source/drain regions are provided on the first active region, and the second elevated source/drain regions are provided on the second active region. A first gate spacer is provided between the first gate pattern and the first elevated source/drain regions. A second gate spacer is provided to cover edges of the second elevated source/drain regions adjacent to the second gate pattern and an upper sidewall of the second gate pattern. Methods of fabricating the CMOS device is also provided.
摘要翻译：提供互补金属氧化物半导体（CMOS）器件。 CMOS器件包括设置在半导体衬底中以限定第一和第二有源区的隔离层。第一和第二栅极图案分别设置成跨越第一和第二有源区域。第一升高的源极区域和第一升高的漏极区域分别设置在第一栅极图案的两侧，并且第二升高的源极区域和第二升高的漏极区域分别设置在第二栅极图案的两侧。第一升高的源极/漏极区域设置在第一有源区上，而第二升高的源极/漏极区域设置在第二有源区域上。在第一栅极图案和第一升高的源极/漏极区域之间提供第一栅极间隔物。设置第二栅极间隔物以覆盖与第二栅极图案相邻的第二升高的源极/漏极区域和第二栅极图案的上侧壁的边缘。还提供了制造CMOS器件的方法。

3. 发明申请

US20060088968A1 Methods of fabricating a semiconductor device using a selective epitaxial growth technique 有权
标题翻译：使用选择性外延生长技术制造半导体器件的方法
公开(公告)号：US20060088968A1
公开(公告)日：2006-04-27
申请号：US11299447
申请日：2005-12-08
申请人： Dong-Suk Shin , Hwa-Sung Rhee , Tetsuji Ueno , Ho Lee , Seung-Hwan Lee
发明人： Dong-Suk Shin , Hwa-Sung Rhee , Tetsuji Ueno , Ho Lee , Seung-Hwan Lee
IPC分类号： H01L21/336
CPC分类号： H01L29/7848 , H01L29/165 , H01L29/6656 , H01L29/6659 , H01L29/66628 , H01L29/66636 , H01L29/7834
摘要： Methods of fabricating a semiconductor device using a selective epitaxial growth technique include forming a recess in a semiconductor substrate. The substrate having the recess is loaded into a reaction chamber. A semiconductor source gas and a main etching gas are injected into the reaction chamber to selectively grow an epitaxial semiconductor layer on a sidewall and on a bottom surface of the recess. A selective etching gas is injected into the reaction chamber to selectively etch a fence of the epitaxial semiconductor layer which is adjacent to the sidewall of the recess and grown to a level that is higher than an upper surface of the semiconductor substrate.
摘要翻译：使用选择性外延生长技术制造半导体器件的方法包括在半导体衬底中形成凹部。将具有凹部的基板装入反应室。将半导体源气体和主蚀刻气体注入到反应室中，以选择性地在凹槽的侧壁和底表面上生长外延半导体层。选择性蚀刻气体被注入到反应室中，以选择性地蚀刻外延半导体层的与凹槽的侧壁相邻的栅栏，并生长到高于半导体衬底的上表面的水平。

4. 发明申请

US20060038230A1 Transistor and method of manufacturing the same 有权
公开(公告)号：US20060038230A1
公开(公告)日：2006-02-23
申请号：US11207703
申请日：2005-08-19
申请人： Tetsuji Ueno , Hwa-Sung Rhee , Ho Lee , Dong-Suk Shin , Seung-Hwan Lee
发明人： Tetsuji Ueno , Hwa-Sung Rhee , Ho Lee , Dong-Suk Shin , Seung-Hwan Lee
IPC分类号： H01L27/12 , H01L29/06
CPC分类号： H01L29/66636 , H01L29/045 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7834
摘要： A transistor includes a semiconductor substrate that has a first surface of a {100} crystal plane, a second surface of the {100} crystal plane having a height lower than that of the first surface, and a third surface of a {111} crystal plane connecting the first surface to the second surface. First heavily doped impurity regions are formed under the second surface. A gate structure is formed on the first surface. An epitaxial layer is formed on the second surface and the third surface. Second heavily doped impurity regions are formed at both sides of the gate structure. The second heavily doped impurity regions have side faces of the {111} crystal plane so that a short channel effect generated between the impurity regions may be prevented.

5. 发明申请

US20060008961A1 Method of forming MOS transistor having fully silicided metal gate electrode 有权
公开(公告)号：US20060008961A1
公开(公告)日：2006-01-12
申请号：US11158978
申请日：2005-06-22
申请人： Seung-Hwan Lee , Dong-Suk Shin , Hwa-Sung Rhee , Tetsuji Ueno , Ho Lee
发明人： Seung-Hwan Lee , Dong-Suk Shin , Hwa-Sung Rhee , Tetsuji Ueno , Ho Lee
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： H01L29/4975 , H01L21/28097 , H01L21/823835 , H01L21/823842 , H01L29/665 , H01L29/6653 , H01L29/66545 , H01L29/6656 , H01L29/66628 , H01L29/66636
摘要： Methods of fabricating a MOS transistor having a fully silicided metal gate electrode are provided. The method includes forming an isolation layer in a predetermined region of a semiconductor substrate to define an active region. An insulated gate pattern which crosses over the active region is formed. A spacer is formed on sidewalls of the gate pattern. A selective epitaxial growth process is applied to form semiconductor layers on the gate pattern and on the active region at both sides of the gate pattern. In this case, a poly-crystalline semiconductor layer is formed on the gate pattern while single-crystalline semiconductor layers are concurrently formed on the active region at both sides of the gate pattern. The semiconductor layers are selectively etched to form a gate-reduced pattern and elevated source and drain regions. Respective desired thicknesses of the gate-reduced pattern and the elevated source and drain regions may be obtained using an etch selectivity between the poly-crystalline semiconductor layer and the single-crystalline semiconductor layer. A silicidation process is applied to the semiconductor substrate where the gate-reduced pattern is formed to simultaneously form a fully silicided metal gate electrode and elevated source and drain silicide layers.

6. 发明授权

US07619285B2 Method of fabricating CMOS transistor and CMOS transistor fabricated thereby 失效
标题翻译：制造CMOS晶体管和CMOS晶体管的方法
公开(公告)号：US07619285B2
公开(公告)日：2009-11-17
申请号：US12029884
申请日：2008-02-12
申请人： Dong-suk Shin , Hwa-sung Rhee , Tetsuji Ueno , Ho Lee , Seung-hwan Lee
发明人： Dong-suk Shin , Hwa-sung Rhee , Tetsuji Ueno , Ho Lee , Seung-hwan Lee
IPC分类号： H01L29/772 , H01L21/8238
CPC分类号： H01L29/66636 , H01L21/823814 , H01L21/823835 , H01L21/823842 , H01L29/165 , H01L29/4933 , H01L29/665 , H01L29/66628 , H01L29/7848
摘要： A CMOS transistor includes first and second conductivity type MOS transistors. The first conductivity type MOS transistor includes elevated source and drain regions which abut a channel region in a semiconductor substrate and which are formed by elevated epitaxial layers, each including a first epitaxial layer formed in a first recessed of the semiconductor substrate and a second epitaxial layer formed on the first epitaxial layer and extending to a level that is above an upper surface of the semiconductor substrate. The second conductivity type MOS transistor includes recessed source and drain regions which abut a channel region of the semiconductor substrate and which are formed by recessed epitaxial layers, each including a first epitaxial layer formed in a second recess of the semiconductor substrate and a second epitaxial layer formed in the second recess on the first epitaxial layer.
摘要翻译： CMOS晶体管包括第一和第二导电类型的MOS晶体管。第一导电型MOS晶体管包括升高的源极和漏极区域，其邻接半导体衬底中的沟道区域并且由升高的外延层形成，每个包括形成在半导体衬底的第一凹部中的第一外延层和第二外延层形成在所述第一外延层上并延伸到所述半导体衬底的上表面之上的水平。第二导电型MOS晶体管包括凹陷的源极和漏极区域，其邻接半导体衬底的沟道区域并且由凹陷的外延层形成，每个包括形成在半导体衬底的第二凹槽中的第一外延层和第二外延层形成在第一外延层上的第二凹槽中。

7. 发明授权

US07582535B2 Method of forming MOS transistor having fully silicided metal gate electrode 有权
标题翻译：形成具有完全硅化金属栅电极的MOS晶体管的方法
公开(公告)号：US07582535B2
公开(公告)日：2009-09-01
申请号：US11158978
申请日：2005-06-22
申请人： Seung-Hwan Lee , Dong-Suk Shin , Hwa-Sung Rhee , Tetsuji Ueno , Ho Lee
发明人： Seung-Hwan Lee , Dong-Suk Shin , Hwa-Sung Rhee , Tetsuji Ueno , Ho Lee
IPC分类号： H01L21/336
CPC分类号： H01L29/4975 , H01L21/28097 , H01L21/823835 , H01L21/823842 , H01L29/665 , H01L29/6653 , H01L29/66545 , H01L29/6656 , H01L29/66628 , H01L29/66636
摘要： Methods of fabricating a MOS transistor having a fully silicided metal gate electrode are provided. The method includes forming an isolation layer in a predetermined region of a semiconductor substrate to define an active region. An insulated gate pattern which crosses over the active region is formed. A spacer is formed on sidewalls of the gate pattern. A selective epitaxial growth process is applied to form semiconductor layers on the gate pattern and on the active region at both sides of the gate pattern. In this case, a poly-crystalline semiconductor layer is formed on the gate pattern while single-crystalline semiconductor layers are concurrently formed on the active region at both sides of the gate pattern. The semiconductor layers are selectively etched to form a gate-reduced pattern and elevated source and drain regions. Respective desired thicknesses of the gate-reduced pattern and the elevated source and drain regions may be obtained using an etch selectivity between the poly-crystalline semiconductor layer and the single-crystalline semiconductor layer. A silicidation process is applied to the semiconductor substrate where the gate-reduced pattern is formed to simultaneously form a fully silicided metal gate electrode and elevated source and drain silicide layers.
摘要翻译：提供制造具有完全硅化金属栅电极的MOS晶体管的方法。该方法包括在半导体衬底的预定区域中形成隔离层以限定有源区。形成了跨越有源区域的绝缘栅极图案。在栅极图案的侧壁上形成间隔物。施加选择性外延生长工艺以在栅极图案上形成半导体层，并且在栅极图案的两侧形成半导体层。在这种情况下，在栅极图案上形成多晶半导体层，同时在栅极图案的两侧的有源区同时形成单晶半导体层。选择性地蚀刻半导体层以形成栅极减小图案和升高的源极和漏极区域。可以使用多晶半导体层和单晶半导体层之间的蚀刻选择性来获得栅极减小图案和升高的源极和漏极区域的各种期望厚度。将硅化处理应用于形成栅极减少图案的半导体衬底，以同时形成完全硅化的金属栅电极和升高的源极和漏极硅化物层。

8. 发明授权

US07365010B2 Semiconductor device having carbon-containing metal silicide layer and method of fabricating the same 有权
标题翻译：具有含碳金属硅化物层的半导体器件及其制造方法
公开(公告)号：US07365010B2
公开(公告)日：2008-04-29
申请号：US11295784
申请日：2005-12-07
申请人： Hwa-sung Rhee , Hion-suck Baik , Dong-suk Shin , Tetsuji Ueno , Seung-hwan Lee , Ho Lee
发明人： Hwa-sung Rhee , Hion-suck Baik , Dong-suk Shin , Tetsuji Ueno , Seung-hwan Lee , Ho Lee
IPC分类号： H01L21/44
CPC分类号： H01L21/28525 , H01L21/28052 , H01L21/28518 , H01L29/665 , H01L29/66507 , H01L29/66628
摘要： Methods of fabricating semiconductor devices having a carbon-containing metal silicide layer and semiconductor devices fabricated by the methods are provided. A representative method includes the steps of preparing a semiconductor substrate and forming a gate electrode and source/drain regions on the semiconductor substrate, such that the gate electrode has a first metal silicide layer on an upper part thereof which contains carbon and the source/drain regions have second metal silicide layers on their substantially carbon-free upper parts.
摘要翻译：提供了制造具有含碳金属硅化物层的半导体器件的方法和通过该方法制造的半导体器件。代表性的方法包括以下步骤：制备半导体衬底并在半导体衬底上形成栅电极和源极/漏极区，使得栅电极在其上部具有含有碳的第一金属硅化物层和源极/漏极区域在其基本上无碳的上部上具有第二金属硅化物层。

9. 发明申请

US20060121660A1 Semiconductor device having carbon-containing metal silicide layer and method of fabricating the same 有权
标题翻译：具有含碳金属硅化物层的半导体器件及其制造方法
公开(公告)号：US20060121660A1
公开(公告)日：2006-06-08
申请号：US11295784
申请日：2005-12-07
申请人： Hwa-sung Rhee , Hion-suck Baik , Dong-suk Shin , Tetsuji Ueno , Seung-hwan Lee , Ho Lee
发明人： Hwa-sung Rhee , Hion-suck Baik , Dong-suk Shin , Tetsuji Ueno , Seung-hwan Lee , Ho Lee
IPC分类号： H01L21/8234 , H01L21/4763
CPC分类号： H01L21/28525 , H01L21/28052 , H01L21/28518 , H01L29/665 , H01L29/66507 , H01L29/66628
摘要： Methods of fabricating semiconductor devices having a carbon-containing metal silicide layer and semiconductor devices fabricated by the methods are provided. A representative method includes the steps of preparing a semiconductor substrate and forming a gate electrode and source/drain regions on the semiconductor substrate, such that the gate electrode has a first metal silicide layer on an upper part thereof which contains carbon and the source/drain regions have second metal silicide layers on their substantially carbon-free upper parts.
摘要翻译：提供了制造具有含碳金属硅化物层的半导体器件的方法和通过该方法制造的半导体器件。代表性的方法包括以下步骤：制备半导体衬底并在半导体衬底上形成栅电极和源极/漏极区，使得栅电极在其上部具有含有碳的第一金属硅化物层和源极/漏极区域在其基本上无碳的上部上具有第二金属硅化物层。

10. 发明申请

US20060038243A1 Transistor and method of manufacturing the same 审中-公开
标题翻译：晶体管及其制造方法
公开(公告)号：US20060038243A1
公开(公告)日：2006-02-23
申请号：US11071018
申请日：2005-03-03
申请人： Tetsuji Ueno , Dong-Suk Shin , Hwa-Sung Rhee , Ho Lee , Seung-Hwan Lee
发明人： Tetsuji Ueno , Dong-Suk Shin , Hwa-Sung Rhee , Ho Lee , Seung-Hwan Lee
IPC分类号： H01L29/76
CPC分类号： H01L29/66621 , H01L21/26506 , H01L21/26513 , H01L29/045 , H01L29/165 , H01L29/32 , H01L29/6656 , H01L29/66636 , H01L29/66659
摘要： A transistor of the present invention includes a semiconductor substrate that has a first surface of the {100} crystal plane, a second surface of the {100} crystal plane having a height lower than that of the first surface, and a side face of the {111} crystal plane connecting the first surface to the second surface. A gate structure is formed on the first surface. An epitaxial layer is formed on the second surface and the side face. Impurity regions are formed adjacent to both sides of the gate structure. The impurity regions have side faces of the {111} crystal plane so that a short channel effect generated between the impurity regions may be prevented.
摘要翻译：本发明的晶体管包括半导体衬底，其具有{100}晶面的第一表面，{100}晶面的第二表面的高度低于第一表面的高度，并且 {111}晶面将第一表面连接到第二表面。栅极结构形成在第一表面上。在第二表面和侧面上形成外延层。杂质区域形成在栅极结构的两侧附近。杂质区域具有{111}晶面的侧面，从而可以防止在杂质区域之间产生的短沟道效应。

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