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1. 发明授权

US07857530B2 Developing method and developing unit 有权
公开(公告)号：US07857530B2
公开(公告)日：2010-12-28
申请号：US12216751
申请日：2008-07-10
申请人： Yuko Ono , Junichi Kitano
发明人： Yuko Ono , Junichi Kitano
IPC分类号： G03D5/00 , G03C5/00 , B08B3/12
CPC分类号： G03D5/00 , G03F7/3028 , G03F7/322 , Y10S134/902
摘要： In a developing method for performing developing treatment of a substrate by supplying a developing solution onto a resist film formed on a surface of the substrate, the present invention controls a zeta potential of the surface of the substrate at a predetermined potential in the same polarity as that of a zeta potential of insoluble substances floating in the developing solution, thereby preventing or reducing the adhesion of the insoluble substances to the resist film and the substrate. This remedies the occurrence of development defects. The adhesion of the insoluble substances to the resist film and the substrate can also be prevented or inhibited by supplying an acid liquid to a liquid on the substrate, or controlling a pH value of the liquid on the substrate to control an absolute value of the zeta potential of the insoluble substances.

2. 发明申请

US20080079917A1 Developing method and developing unit 失效
公开(公告)号：US20080079917A1
公开(公告)日：2008-04-03
申请号：US11898694
申请日：2007-09-14
申请人： Yuko Ono , Junichi Kitano
发明人： Yuko Ono , Junichi Kitano
IPC分类号： G03B27/52 , G03F7/30
CPC分类号： G03D5/00 , G03F7/3028 , G03F7/322 , Y10S134/902
摘要： In a developing method for performing developing treatment of a substrate by supplying a developing solution onto a resist film formed on a surface of the substrate, the present invention controls a zeta potential of the surface of the substrate at a predetermined potential in the same polarity as that of a zeta potential of insoluble substances floating in the developing solution, thereby preventing or reducing the adhesion of the insoluble substances to the resist film and the substrate. This remedies the occurrence of development defects. The adhesion of the insoluble substances to the resist film and the substrate can also be prevented or inhibited by supplying an acid liquid to a liquid on the substrate, or controlling a pH value of the liquid on the substrate to control an absolute value of the zeta potential of the insoluble substances.

3. 发明申请

US20080284989A1 Developing method and developing unit 有权
公开(公告)号：US20080284989A1
公开(公告)日：2008-11-20
申请号：US12216751
申请日：2008-07-10
申请人： Yuko Ono , Junichi Kitano
发明人： Yuko Ono , Junichi Kitano
IPC分类号： G03B27/52
CPC分类号： G03D5/00 , G03F7/3028 , G03F7/322 , Y10S134/902
摘要： In a developing method for performing developing treatment of a substrate by supplying a developing solution onto a resist film formed on a surface of the substrate, the present invention controls a zeta potential of the surface of the substrate at a predetermined potential in the same polarity as that of a zeta potential of insoluble substances floating in the developing solution, thereby preventing or reducing the adhesion of the insoluble substances to the resist film and the substrate. This remedies the occurrence of development defects. The adhesion of the insoluble substances to the resist film and the substrate can also be prevented or inhibited by supplying an acid liquid to a liquid on the substrate, or controlling a pH value of the liquid on the substrate to control an absolute value of the zeta potential of the insoluble substances.

4. 发明申请

US20100047725A1 DEVELOPING METHOD AND DEVELOPING UNIT 有权
标题翻译：发展方法和发展单位
公开(公告)号：US20100047725A1
公开(公告)日：2010-02-25
申请号：US12609425
申请日：2009-10-30
申请人： Yuko ONO , Junichi Kitano
发明人： Yuko ONO , Junichi Kitano
IPC分类号： G03C1/00
CPC分类号： G03D5/00 , G03F7/3028 , G03F7/322 , Y10S134/902
摘要： In a developing method for performing developing treatment of a substrate by supplying a developing solution onto a resist film formed on a surface of the substrate, the present invention controls a zeta potential of the surface of the substrate at a predetermined potential in the same polarity as that of a zeta potential of insoluble substances floating in the developing solution, thereby preventing or reducing the adhesion of the insoluble substances to the resist film and the substrate. This remedies the occurrence of development defects. The adhesion of the insoluble substances to the resist film and the substrate can also be prevented or inhibited by supplying an acid liquid to a liquid on the substrate, or controlling a pH value of the liquid on the substrate to control an absolute value of the zeta potential of the insoluble substances.
摘要翻译：在通过将显影液供给到形成在基板的表面上的抗蚀剂膜上的基板进行显影处理的显影方法中，本发明将基板表面的ζ电位控制在与不溶物质的ζ电位漂浮在显影液中，从而防止或降低不溶物质对抗蚀剂膜和基材的粘附。这样可以弥补发展缺陷的发生。还可以通过向基板上的液体供给酸性液体，或者控制基板上的液体的pH值来控制ζ的绝对值，从而可以防止或抑制不溶性物质与抗蚀剂膜和基材的粘附潜在的不溶物质。

5. 发明授权

US06955485B2 Developing method and developing unit 失效
标题翻译：开发方法和开发单位
公开(公告)号：US06955485B2
公开(公告)日：2005-10-18
申请号：US10373063
申请日：2003-02-26
申请人： Yuko Ono , Junichi Kitano
发明人： Yuko Ono , Junichi Kitano
IPC分类号： G03F7/30 , G03D5/00 , B08B3/02 , C25F3/04 , H03L21/302
CPC分类号： G03D5/00 , G03F7/3028 , G03F7/322 , Y10S134/902
摘要： In a developing method for performing developing treatment of a substrate by supplying a developing solution onto a resist film formed on a surface of the substrate, the present invention controls a zeta potential of the surface of the substrate at a predetermined potential in the same polarity as that of a zeta potential of insoluble substances floating in the developing solution, thereby preventing or reducing the adhesion of the insoluble substances to the resist film and the substrate. This remedies the occurrence of development defects. The adhesion of the insoluble substances to the resist film and the substrate can also be prevented or inhibited by supplying an acid liquid to a liquid on the substrate, or controlling a pH value of the liquid on the substrate to control an absolute value of the zeta potential of the insoluble substances.
摘要翻译：在通过将显影液供给到形成在基板的表面上的抗蚀剂膜上的基板进行显影处理的显影方法中，本发明将基板表面的ζ电位控制在与不溶物质的ζ电位漂浮在显影液中，从而防止或降低不溶物质对抗蚀剂膜和基材的粘附。这样可以弥补发展缺陷的发生。还可以通过向基板上的液体供给酸性液体，或者控制基板上的液体的pH值来控制ζ的绝对值，从而可以防止或抑制不溶性物质与抗蚀剂膜和基材的粘附潜在的不溶物质。

6. 发明授权

US08053180B2 Developing method and developing unit 有权
标题翻译：开发方法和开发单位
公开(公告)号：US08053180B2
公开(公告)日：2011-11-08
申请号：US12609425
申请日：2009-10-30
申请人： Yuko Ono , Junichi Kitano
发明人： Yuko Ono , Junichi Kitano
IPC分类号： G03F7/26
CPC分类号： G03D5/00 , G03F7/3028 , G03F7/322 , Y10S134/902
摘要： In a developing method for performing developing treatment of a substrate by supplying a developing solution onto a resist film formed on a surface of the substrate, the present invention controls a zeta potential of the surface of the substrate at a predetermined potential in the same polarity as that of a zeta potential of insoluble substances floating in the developing solution, thereby preventing or reducing the adhesion of the insoluble substances to the resist film and the substrate. This remedies the occurrence of development defects. The adhesion of the insoluble substances to the resist film and the substrate can also be prevented or inhibited by supplying an acid liquid to a liquid on the substrate, or controlling a pH value of the liquid on the substrate to control an absolute value of the zeta potential of the insoluble substances.
摘要翻译：在通过将显影液供给到形成在基板的表面上的抗蚀剂膜上的基板进行显影处理的显影方法中，本发明将基板表面的ζ电位控制在与不溶物质的ζ电位漂浮在显影液中，从而防止或降低不溶物质对抗蚀剂膜和基材的粘附。这样可以弥补发展缺陷的发生。还可以通过向基板上的液体供给酸性液体，或者控制基板上的液体的pH值来控制ζ的绝对值，从而可以防止或抑制不溶性物质与抗蚀剂膜和基材的粘附潜在的不溶物质。

7. 发明申请

US20050266359A1 Developing method and developing unit 审中-公开
公开(公告)号：US20050266359A1
公开(公告)日：2005-12-01
申请号：US11181770
申请日：2005-07-15
申请人： Yuko Ono , Junichi Kitano
发明人： Yuko Ono , Junichi Kitano
IPC分类号： G03F7/30
CPC分类号： G03D5/00 , G03F7/3028 , G03F7/322 , Y10S134/902
摘要： In a developing method for performing developing treatment of a substrate by supplying a developing solution onto a resist film formed on a surface of the substrate, the present invention controls a zeta potential of the surface of the substrate at a predetermined potential in the same polarity as that of a zeta potential of insoluble substances floating in the developing solution, thereby preventing or reducing the adhesion of the insoluble substances to the resist film and the substrate. This remedies the occurrence of development defects. The adhesion of the insoluble substances to the resist film and the substrate can also be prevented or inhibited by supplying an acid liquid to a liquid on the substrate, or controlling a pH value of the liquid on the substrate to control an absolute value of the zeta potential of the insoluble substances.

8. 发明授权

US06617095B2 Evaluating method of hydrophobic process, forming method of resist pattern, and forming system of resist pattern 失效
公开(公告)号：US06617095B2
公开(公告)日：2003-09-09
申请号：US09827095
申请日：2001-04-06
申请人： Junichi Kitano , Keiko Hada , Yuko Ono , Takayuki Katano , Hidefumi Matsui
发明人： Junichi Kitano , Keiko Hada , Yuko Ono , Takayuki Katano , Hidefumi Matsui
IPC分类号： C23C1600
CPC分类号： G03F7/16 , Y10T428/2995
摘要： A HMDS gas is supplied to a surface of a wafer W to perform a hydrophobic process, thereafter the wafer W is contained in an airtight container on a cassette stage, and is transferred to an analyzer provided at an external portion of a resist pattern forming apparatus. The analyzer performs mass spectrometry of the quantity of an ionic species such as CH9Si+, C3H9Si+, C3H9Osi− and the like on the surface of the wafer W using an analyzing section, for example, TOF-SIMS, whereby measuring a HMDS quantity (hexamethyldisilazane) on the surface of the wafer W. This method makes it possible to measure the HMDS quantity on the surface of the wafer W and to evaluate a hydrophobic process state with high reliability.

9. 发明授权

US07794924B2 Developing method and developing unit 失效
标题翻译：开发方法和开发单位
公开(公告)号：US07794924B2
公开(公告)日：2010-09-14
申请号：US11898694
申请日：2007-09-14
申请人： Yuko Ono , Junichi Kitano
发明人： Yuko Ono , Junichi Kitano
IPC分类号： G03F7/26
CPC分类号： G03D5/00 , G03F7/3028 , G03F7/322 , Y10S134/902
摘要： In a developing method for performing developing treatment of a substrate by supplying a developing solution onto a resist film formed on a surface of the substrate, the present invention controls a zeta potential of the surface of the substrate at a predetermined potential in the same polarity as that of a zeta potential of insoluble substances floating in the developing solution, thereby preventing or reducing the adhesion of the insoluble substances to the resist film and the substrate. This remedies the occurrence of development defects. The adhesion of the insoluble substances to the resist film and the substrate can also be prevented or inhibited by supplying an acid liquid to a liquid on the substrate, or controlling a pH value of the liquid on the substrate to control an absolute value of the zeta potential of the insoluble substances.
摘要翻译：在通过将显影液供给到形成在基板的表面上的抗蚀剂膜上的基板进行显影处理的显影方法中，本发明将基板表面的ζ电位控制在与不溶物质的ζ电位漂浮在显影液中，从而防止或降低不溶物质对抗蚀剂膜和基材的粘附。这样可以弥补发展缺陷的发生。还可以通过向基板上的液体供给酸性液体，或者控制基板上的液体的pH值来控制ζ的绝对值，从而可以防止或抑制不溶性物质与抗蚀剂膜和基材的粘附潜在的不溶物质。

10. 发明授权

US07427168B2 Developing method and developing unit 失效
公开(公告)号：US07427168B2
公开(公告)日：2008-09-23
申请号：US11898693
申请日：2007-09-14
申请人： Yuko Ono , Junichi Kitano
发明人： Yuko Ono , Junichi Kitano
IPC分类号： G03D5/00 , C25F3/04 , B08B3/02 , H01L21/302
CPC分类号： G03D5/00 , G03F7/3028 , G03F7/322 , Y10S134/902
摘要： In a developing method for performing developing treatment of a substrate by supplying a developing solution onto a resist film formed on a surface of the substrate, the present invention controls a zeta potential of the surface of the substrate at a predetermined potential in the same polarity as that of a zeta potential of insoluble substances floating in the developing solution, thereby preventing or reducing the adhesion of the insoluble substances to the resist film and the substrate. This remedies the occurrence of development defects. The adhesion of the insoluble substances to the resist film and the substrate can also be prevented or inhibited by supplying an acid liquid to a liquid on the substrate, or controlling a pH value of the liquid on the substrate to control an absolute value of the zeta potential of the insoluble substances.

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