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1. 发明授权

US4457949A Method of producing a photoelectric conversion layer 失效
标题翻译：光电转换层的制造方法
公开(公告)号：US4457949A
公开(公告)日：1984-07-03
申请号：US388619
申请日：1982-06-15
申请人： Yukio Takasaki , Yasuharu Shimomoto , Yasuo Tanaka , Akira Sasano , Toshihisa Tsukada
发明人： Yukio Takasaki , Yasuharu Shimomoto , Yasuo Tanaka , Akira Sasano , Toshihisa Tsukada
IPC分类号： H01L31/0248 , H01L31/08 , B05D3/14 , B05D5/12
CPC分类号： H01J9/233 , H01L31/08
摘要： A hydrogen-containing amorphous silicon layer is formed on a substrate held below 200.degree. C., in a plasma atmosphere, whereupon the plasma is stopped and the layer is heated in a temperature range of 200.degree. C.-400.degree. C. without cooling the substrate. The saturation field for photocurrent of electrons or holes can be made low. In case of using electrons as major carriers, preferably the heating temperature is set in a temperature range of 200.degree. C.-240.degree. C., and in case of using holes as major carriers, preferably it is set in a range of 270.degree. C.-400.degree. C.
摘要翻译：在等离子体气氛中，在200℃以下的基板上形成含氢非晶硅层，停止等离子体，在200〜400℃的温度范围内加热该层底物。可以使电子或空穴的光电流的饱和场低。在使用电子作为主要载体的情况下，优选将加热温度设定在200℃-240℃的温度范围内，在使用空穴作为主要载体的情况下，优选设定在270℃ C.-400℃

2. 发明授权

US4430185A Method of producing photoelectric transducers 失效
标题翻译：光电传感器的制造方法
公开(公告)号：US4430185A
公开(公告)日：1984-02-07
申请号：US245749
申请日：1981-03-20
申请人： Yasuharu Shimomoto , Toshihisa Tsukada , Akira Sasano , Yasuo Tanaka , Hideaki Yamamoto , Yukio Takasaki
发明人： Yasuharu Shimomoto , Toshihisa Tsukada , Akira Sasano , Yasuo Tanaka , Hideaki Yamamoto , Yukio Takasaki
IPC分类号： C23C14/00 , C23C16/509 , H01L27/146 , H01L31/20 , H04N5/335 , H04N5/357 , H04N5/369 , H04N5/372 , H04N5/374 , C23C15/00
CPC分类号： C23C14/0036 , C23C16/5096 , H01L27/14665 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： In the method of producing photoelectric transducers having processes for forming a photoconductive layer on a predetermined substrate with an irregular surface by a method of depositing the photoconductive layer in the atmosphere including at least plasma, the predetermined substrate with irregular surface is disposed above a first electrode to which an electrode is opposed, and said photoconductive layer is formed while a negative potential is being applied to the first electrode. This enables the photoconductive layer to be formed without breaks at steps, pinholes and so on due to the irregular surface, and therefore, it is possible to provide good photoelectric transducers with small dark current.
摘要翻译：在具有通过在包括至少等离子体的气氛中沉积光电导层的方法的具有不规则表面的预定基板上形成光电导层的工艺的方法中，具有不规则表面的预定基板设置在第一电极电极相对，并且所述光导电层形成，同时向第一电极施加负电位。这使得光电导层由于不规则的表面而在步骤，针孔等形成而不会发生断裂，因此，可以提供具有小暗电流的良好光电传感器。

3. 发明授权

US4554478A Photoelectric conversion element 失效
标题翻译：光电转换元件
公开(公告)号：US4554478A
公开(公告)日：1985-11-19
申请号：US497841
申请日：1983-05-25
申请人： Yasuharu Shimomoto , Yasuo Tanaka , Yukio Takasaki , Sachio Ishioka , Toshihisa Tsukada , Toru Baji
发明人： Yasuharu Shimomoto , Yasuo Tanaka , Yukio Takasaki , Sachio Ishioka , Toshihisa Tsukada , Toru Baji
IPC分类号： H01J29/45 , H01L27/146 , H01L31/0224 , H04N5/335 , H04N5/359 , H04N5/361 , H04N5/369 , H04N5/372 , H04N5/374 , H01J31/38
CPC分类号： H01L27/14665 , H01J29/45 , H01J29/456 , H01L31/022408
摘要： In a photoelectric conversion element including at least a first electrode and a photoconductive layer having an amorphous material whose indispensable constituent is silicon and which contains hydrogen as an essential constituent element on a predetermined substrate, the present invention discloses a photoelectric conversion element wherein said layer of the amorphous material is disposed on said first electrode via a light transmitting or light semi-transmitting metallic layer for adhesion with respect to said amorphous material. As said metallic layer for adhesion, preferred is a layer consisting of at least one metal selected from the group consisting of Ta, Cr, W, Nd, Mo, V and Ti. Thus, adhesion between said substrate and said amorphous material can be improved.
摘要翻译：在至少具有第一电极和光电导层的光电转换元件中，所述光电转换元件具有不可缺少的成分为硅并且含有作为必要构成元素的氢作为预定基板的非晶材料的光电转换元件，本发明公开了一种光电转换元件，非晶材料通过透光或半透光金属层设置在所述第一电极上，用于相对于所述无定形材料的粘合。作为所述金属粘合层，优选由选自Ta，Cr，W，Nd，Mo，V和Ti中的至少一种金属组成的层。因此，可以提高所述基板和所述非晶材料之间的粘附。

4. 发明授权

US4380557A Method of production of image pickup device 失效
标题翻译：图像拾取装置的制造方法
公开(公告)号：US4380557A
公开(公告)日：1983-04-19
申请号：US287554
申请日：1981-07-28
申请人： Sachio Ishioka , Yasuharu Shimomoto , Yoshinori Imamura , Saburo Ataka , Yasuo Tanaka , Hirokazu Matsubara , Yukio Takasaki , Eiichi Maruyama
发明人： Sachio Ishioka , Yasuharu Shimomoto , Yoshinori Imamura , Saburo Ataka , Yasuo Tanaka , Hirokazu Matsubara , Yukio Takasaki , Eiichi Maruyama
IPC分类号： G03G5/08 , B05D3/02 , B05D3/04 , H01J9/233 , H01L21/205 , H01L31/04 , H01L31/08 , H01L31/10
CPC分类号： H01J9/233
摘要： In preparing an image pickup device by using hydrogen-containing amorphous silicon for a photoconductive layer, a hydrogen-containing amorphous silicon layer is first formed and is then heat-treated at 100.degree. to 300.degree. C. The image pickup characteristics of the amorphous silicon layer are highly improved by this heat treatment. For example, the lag and dark current are reduced and the signal current-target voltage characteristic is improved. Especially excellent improving effects can be obtained when amorphous silicon characterized in that (1) the hydrogen content is 5 to 30 atomic %, (2) the optical forbidden band gap is 1.30 to 1.95 eV and (3) in the infrared absorption spectrum, the component of a wave number of 2000 cm.sup.-1 is observed larger than the component of a wave number of 2100 cm.sup.-1 is subjected to the above-mentioned heat treatment. The adhesion to the substrate is enhanced, and good image pickup characteristics can be obtained.
摘要翻译：在通过使用含氢非晶硅作为光电导层制备图像拾取装置时，首先形成含氢非晶硅层，然后在100℃至300℃下进行热处理。非晶硅的图像拾取特性通过这种热处理高度改善了层。例如，滞后和暗电流降低，信号电流 - 目标电压特性提高。当非晶硅的特征在于：（1）氢含量为5〜30原子％，（2）光学禁带宽为1.30〜1.95eV，（3）在红外吸收光谱中，特别优异的改善效果为观察到比2100cm -1的波数的分量更大的波数为2000cm -1的分量进行上述热处理。增强了与基板的粘附性，并且可以获得良好的图像拾取特性。

5. 发明授权

US4394749A Photoelectric device and method of producing the same 失效
标题翻译：光电器件及其制造方法
公开(公告)号：US4394749A
公开(公告)日：1983-07-19
申请号：US154999
申请日：1980-05-30
申请人： Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai , Toru Baji , Hideaki Yamamoto , Yasuo Tanaka , Eiichi Maruyama , Sachio Ishioka
发明人： Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai , Toru Baji , Hideaki Yamamoto , Yasuo Tanaka , Eiichi Maruyama , Sachio Ishioka
IPC分类号： H01L27/146 , G11C13/00
CPC分类号： H01L27/14665
摘要： A photoelectric device having at least a predetermined impurity region which is disposed in a semiconductor substrate, and a photoelectric conversion portion which is constructed by stacking an electrode layer lying in contact with at least a part of the impurity region, a photoconductive material layer overlying the electrode layer, and a transparent electrode overlying the photoconductive material layer, characterized in that the photoconductive material layer is made of an amorphous chalcogenide material which principally contains Se, is disclosed. It is very favorable that the photoelectric conversion material layer made of the amorphous material principally containing Se is partially doped with Te so as to enhance its sensitivity. The amorphous chalcogenide material is very useful in the following point. In the course of forming, or after having formed, at least one photoconductive layer on a semiconductor body whose surface is uneven, a heat treatment is performed at a temperature of at least the softening point of the photoconductor so as to flatten the layer, whereby discontinuous parts of the photoconductor ascribable to the uneven surface of the semiconductor body can be avoided.
摘要翻译：具有至少设置在半导体衬底中的预定杂质区域的光电器件和通过堆叠与至少一部分杂质区域接触的电极层构成的光电转换部分，覆盖电极层和覆盖光导材料层的透明电极，其特征在于，所述光导材料层由主要包含Se的无定形硫族化物材料制成。非常有利的是，由主要含有Se的非晶体材料制成的光电转换材料层部分地掺杂有Te以提高其灵敏度。无定形硫族化物材料在以下方面非常有用。在形成表面不均匀的半导体本体上形成或形成至少一个光电导层的过程中，至少在光电导体的软化点的温度下进行热处理以使层平坦化，由此可以避免归因于半导体本体的不平坦表面的感光体的不连续部分。

6. 发明授权

US4829345A Electronic device having light transmission system 失效
标题翻译：具有光传输系统的电子设备
公开(公告)号：US4829345A
公开(公告)日：1989-05-09
申请号：US857089
申请日：1986-04-29
申请人： Sachio Ishioka , Kazutaka Tsuji , Yukio Takasaki , Yasuharu Shimomoto , Hirokazu Matsubara , Tadaaki Hirai
发明人： Sachio Ishioka , Kazutaka Tsuji , Yukio Takasaki , Yasuharu Shimomoto , Hirokazu Matsubara , Tadaaki Hirai
IPC分类号： H01L27/00 , G02B6/12 , G02B6/43 , H01L27/15 , H01L31/12
CPC分类号： H04B10/801 , G02B6/12002 , G02B6/43 , H01L31/12
摘要： Within an electronic device having a plurality of circuit parts (such as a three-dimensional device), a light transmission system which transfers signals between the circuit parts by the use of light is provided.The light transmission system is formed of a light emitting source which emits light having a desired wavelength, a photoelectric conversion portion which absorbs the light and converts it into an electric signal, and a light traveling path which conveys the light emitted from the light emitting source to the photoelectric conversion portion.Further, each of the light emitting source, the light traveling path and the photoelectric conversion portion is formed of a superlattice structure in which a plurality of materials of unequal energy gaps are layered.
摘要翻译：在具有多个电路部分（例如三维装置）的电子装置中，提供了通过使用光在电路部分之间传送信号的光传输系统。光传输系统由发射具有期望波长的光的发光源，吸收光并将其转换为电信号的光电转换部分和从发光源发射的光传输的光行进路径到光电转换部分。此外，发光源，光行进路径和光电转换部分中的每一个由层叠不同能隙的多种材料的超晶格结构形成。

7. 发明授权

US4900975A Target of image pickup tube having an amorphous semiconductor laminate 失效
标题翻译：具有非晶半导体层叠体的图像拾取管的目标
公开(公告)号：US4900975A
公开(公告)日：1990-02-13
申请号：US67229
申请日：1987-06-29
申请人： Yasuharu Shimomoto , Sachio Ishioka , Yukio Takasaki , Tadaaki Hirai , Kazutaka Tsuji , Tatsuo Makishima , Hirokazu Matsubara , Kenji Sameshima , Junichi Yamazaki , Kenkichi Tanioka , Mitsuo Kosugi , Keiichi Shidara , Tatsuro Kawamura , Eikyuu Hiruma , Takashi Yamashita
发明人： Yasuharu Shimomoto , Sachio Ishioka , Yukio Takasaki , Tadaaki Hirai , Kazutaka Tsuji , Tatsuo Makishima , Hirokazu Matsubara , Kenji Sameshima , Junichi Yamazaki , Kenkichi Tanioka , Mitsuo Kosugi , Keiichi Shidara , Tatsuro Kawamura , Eikyuu Hiruma , Takashi Yamashita
IPC分类号： H01L31/08 , H01J29/45 , H01J31/38
CPC分类号： H01J29/456
摘要： A target of an image pickup tube is formed by laminating at least a transparent conductive film, an amorphous layer consisting essentially of silicon, and an amorphous layer consisting essentially of selenium in the above order on a light-transmitting substrate.
摘要翻译：图像拾取管的目标是通过在透光性基板上层叠至少透明导电膜，基本上由硅构成的非晶层和基本上由硒组成的非晶层。

8. 发明授权

US4405935A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4405935A
公开(公告)日：1983-09-20
申请号：US227679
申请日：1981-01-23
申请人： Toru Baji , Norio Koike , Toshihisa Tsukada , Iwao Takemoto , Hideaki Yamamoto , Yukio Takasaki
发明人： Toru Baji , Norio Koike , Toshihisa Tsukada , Iwao Takemoto , Hideaki Yamamoto , Yukio Takasaki
IPC分类号： H01L27/146 , H04N5/335 , H04N5/359 , H04N5/369 , H04N5/374 , H01L27/14
CPC分类号： H01L27/14672
摘要： Disclosed is a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for selecting positions of picture elements and scanners for turning "on" and "off" the switching elements in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected to one end of each of the switching elements, and a light transmitting electrode which is disposed on the photoconductive film, characterized at least in that a breakdown voltage of a junction formed between the semiconductor substrate and an impurity region which has a conductivity type opposite to that of the semiconductor substrate and which stores therein carriers attendant upon incidence of light is made smaller than a breakdown voltage between the storing first impurity region of said each switching element and a second impurity region thereof which forms a signal leading-out portion.
摘要翻译：公开了一种具有半导体集成电路的固态成像装置，其中用于选择用于按时间顺序将开关元件“接通”和“关闭”的图像元素和扫描器的位置的多个开关元件设置在相同的基板上，设置在所述集成电路上并连接到每个所述开关元件的一端的光电导膜和设置在所述光电导膜上的透光电极，其特征在于，至少形成在所述光电导膜之间形成的结的击穿电压，所述半导体衬底和具有与所述半导体衬底的导电类型相反的导电类型并且存储在入射时伴随的载流子的杂质区域被制成小于所述每个开关元件的所述存储第一杂质区域与所述第二开关元件的存储第一杂质区域之间的击穿电压其形成信号导出部分的杂质区域。

9. 发明授权

US4249106A Radiation sensitive screen 失效
标题翻译：辐射敏感屏
公开(公告)号：US4249106A
公开(公告)日：1981-02-03
申请号：US92021
申请日：1979-11-07
申请人： Eiichi Maruyama , Saburo Ataka , Kiyohisa Inao , Yoshinori Imamura , Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai
发明人： Eiichi Maruyama , Saburo Ataka , Kiyohisa Inao , Yoshinori Imamura , Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai
IPC分类号： H01J9/233 , H01J29/39 , H01J29/45
CPC分类号： H01J29/39 , H01J29/45 , H01J9/233
摘要： A radiation sensitive screen comprising a crystalline silicon substrate which is located on a side of incidence of radiation, and an amorphous silicon film which contains hydrogen and which is located on the opposite side of the substrate to the side of the incidence of the radiation. The radiation sensitive screen of this invention can be manufactured by a simple method, and can achieve a high resolution. It is useful for the target of an image pickup tube, the electron bombardment target of an X-ray fluorescence multiplier tube, etc.
摘要翻译：一种辐射敏感屏幕，其包括位于辐射入射侧的晶体硅衬底和包含氢的位于辐射入射侧的衬底相对侧上的非晶硅膜。本发明的辐射敏感屏可以通过简单的方法制造，并且可以实现高分辨率。对于图像拾取管的目标，X射线荧光倍增管的电子轰击靶等等是有用的

10. 发明授权

US4429325A Photosensor 失效
标题翻译：光电传感器
公开(公告)号：US4429325A
公开(公告)日：1984-01-31
申请号：US206780
申请日：1980-11-14
申请人： Yukio Takasaki , Tadaaki Hirai , Hideaki Yamamoto , Toshihisa Tsukada , Yoshiaki Mori
发明人： Yukio Takasaki , Tadaaki Hirai , Hideaki Yamamoto , Toshihisa Tsukada , Yoshiaki Mori
IPC分类号： H01L27/146 , H01L31/0264 , H04N5/335 , H04N5/359 , H04N5/361 , H04N5/369 , H04N5/374 , H01L27/14
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14623 , H01L27/14665
摘要： In a photosensor having a metal electrode, at least one photoelectric conversion layer which overlies the metal electrode, and a transparent or partly transparent conductive layer which overlies the photoelectric conversion layer, a recombination layer for recombining electrons and holes is disposed between the metal electrode and the photoelectric conversion layer. By disposing the recombination layer, the metal electrode having an insulating oxide film on its surface can be handled as if the insulating oxide film were not existent. The dark current is suppressed, and the photo-response is made good. As the materials of the recombination layer, Sb.sub.2 S.sub.3, As.sub.2 Se.sub.3, As.sub.2 S.sub.3, Sb.sub.2 Se.sub.3 etc. are typical.
摘要翻译：在具有金属电极的光电传感器中，覆盖在金属电极上的至少一个光电转换层和覆盖在光电转换层上的透明或部分透明导电层，在金属电极与金属电极之间配置复合层，光电转换层。通过配置复合层，其表面上具有绝缘氧化膜的金属电极可以像不存在绝缘氧化膜那样被处理。暗电流被抑制，光响应良好。作为复合层的材料，通常是Sb2S3，As2Se3，As2S3，Sb2Se3等。

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