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1. 发明授权

US06461934B2 Method of manufacturing semiconductor device having trench type element isolation regions 失效
标题翻译：制造具有沟槽型元件隔离区域的半导体器件的方法
公开(公告)号：US06461934B2
公开(公告)日：2002-10-08
申请号：US09862311
申请日：2001-05-23
申请人： Yukio Nishida , Shuichi Ueno , Masashi Kitazawa
发明人： Yukio Nishida , Shuichi Ueno , Masashi Kitazawa
IPC分类号： H01L2176
CPC分类号： H01L21/76229
摘要： Trench isolation regions of different depths are formed through a simple manufacturing process, and reliability of a semiconductor device is increased. Trenches (103a, 103b) of different widths are formed on a semiconductor substrate (101) on which an underlying film (104) such as a silicon oxide film and a mask material (105) such as a silicon nitride film are formed. Then, an insulating film such as a silicon oxide film is deposited over the entire surface to such a degree that the narrower trench (103a) is filled up. At this time, the wider trench (103b) has an unfilled space in its central portion. a The surface of the substrate (101) is then vertically etched back until it is exposed in the trench 103b. With insulating films (106a, 106b) in the trenches (103a, 103b) as a mask, the surface of the substrate (101) is anisotropically etched vertically to form a deeper bottom (103c) in the trench (103b). After that, the surface is planarizedby depositing an insulating film in the unfilled space of the trench (103b).
摘要翻译：通过简单的制造工艺形成不同深度的沟槽隔离区域，并且增加了半导体器件的可靠性。在半导体衬底（101）上形成不同宽度的沟槽（103a，103b），在其上形成诸如氧化硅膜的底层膜（104）和诸如氮化硅膜的掩模材料（105）。然后，在整个表面上沉积诸如氧化硅膜的绝缘膜，使得填充较窄的沟槽（103a）的程度。此时，较宽的沟槽（103b）在其中央部分具有未填充的空间。 a然后将衬底（101）的表面垂直蚀刻回直到其暴露在沟槽103b中。以沟槽（103a，103b）中的绝缘膜（106a，106b）作为掩模，垂直地各向异性地蚀刻衬底（101）的表面，以在沟槽（103b）中形成更深的底部（103c）。之后，通过在沟槽（103b）的未填充空间中沉积绝缘膜来平坦化表面。

2. 发明授权

US06812536B2 MOSFET with graded gate oxide layer 失效
标题翻译：具有梯度栅氧化层的MOSFET
公开(公告)号：US06812536B2
公开(公告)日：2004-11-02
申请号：US10383753
申请日：2003-03-10
申请人： Shuichi Ueno , Yukio Nishida , Hiroshi Umeda , Kenichi Ohto , Takashi Terauchi , Shigeru Shiratake , Akinori Kinugasa
发明人： Shuichi Ueno , Yukio Nishida , Hiroshi Umeda , Kenichi Ohto , Takashi Terauchi , Shigeru Shiratake , Akinori Kinugasa
IPC分类号： H01L2976
CPC分类号： H01L29/42368 , H01L21/28247
摘要： A smile oxide film, serving as a gate oxide film, is formed under a three-layer poly-metal gate consisting of a doped polysilicon layer, a tungsten layer, and a SiON layer. The smile oxide film has a first region located beneath an edge of the poly-metal gate and a second region located beneath a central portion of the poly-metal gate. A film thickness of the first region is larger than a film thickness of the second region. An anti-oxidizing film, having a small oxygen diffusion rate compared with the polysilicon layer, entirely covers the poly-metal gate without exposing.
摘要翻译：作为栅极氧化膜的微笑氧化膜形成在由掺杂多晶硅层，钨层和SiON层构成的三层多金属栅极的下方。微笑氧化膜具有位于多金属栅极的边缘下方的第一区域和位于多金属栅极的中心部分下方的第二区域。第一区域的膜厚度大于第二区域的膜厚度。与多晶硅层相比具有小的氧扩散速率的抗氧化膜完全覆盖多金属栅极而不暴露。

3. 发明授权

US08546151B2 Method for manufacturing magnetic storage device and magnetic storage device 有权
标题翻译：磁存储装置和磁存储装置的制造方法
公开(公告)号：US08546151B2
公开(公告)日：2013-10-01
申请号：US12528854
申请日：2008-02-25
申请人： Haruo Furuta , Shuichi Ueno , Ryoji Matsuda , Tatsuya Fukumura , Takeharu Kuroiwa , Lien-Chang Wang , Eugene Chen , Yiming Huai
发明人： Haruo Furuta , Shuichi Ueno , Ryoji Matsuda , Tatsuya Fukumura , Takeharu Kuroiwa , Lien-Chang Wang , Eugene Chen , Yiming Huai
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , B82Y10/00 , H01L27/228
摘要： Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode.
摘要翻译：公开了一种制造包括TMR元件的磁存储装置的方法，该方法包括在具有布线层的层间绝缘膜上形成绝缘膜的步骤，用于在绝缘膜上形成开口的开口形成步骤，布线层暴露于其中，金属层形成步骤用于在绝缘层上形成金属层以使其开口被填充; CMP步骤，用于通过CMP方法在绝缘层上抛光和去除金属层，并形成金属剩余在开口中的层形成下电极，以及在下电极上形成TMR元件的步骤。还公开了一种磁存储装置，其包括设置有布线层的层间绝缘膜，形成在层间绝缘膜上的绝缘膜，形成在绝缘膜中的开口，使得布线层暴露于其中，阻挡金属层设置为为了覆盖开口的内表面，形成在阻挡金属上以便填充开口的下电极和形成在下电极上的TMR元件。

4. 发明授权

US08258592B2 Semiconductor device including a magnetic tunnel junction device including a laminated structure and manufacturing method therefor 有权
标题翻译：包括具有叠层结构的磁性隧道结装置及其制造方法的半导体装置
公开(公告)号：US08258592B2
公开(公告)日：2012-09-04
申请号：US12463865
申请日：2009-05-11
申请人： Ryoji Matsuda , Shuichi Ueno , Haruo Furuta , Takashi Takenaga , Takeharu Kuroiwa
发明人： Ryoji Matsuda , Shuichi Ueno , Haruo Furuta , Takashi Takenaga , Takeharu Kuroiwa
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： A semiconductor device having a MTJ device excellent in operating characteristics and a manufacturing method therefor are provided. The MTJ device is formed of a laminated structure which is obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower and upper magnetic films contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlOx) as a constituent material. A CAP layer is formed over the upper magnetic film and a hard mask is formed over the CAP layer. The CAP layer contains a substance of crystalline ruthenium (Ru) as a constituent material and the hard mask contains a substance of crystalline tantalum (Ta) as a constituent material. The film thickness of the hard mask is larger than that of the CAP layer.
摘要翻译：提供一种具有优异的操作特性的MTJ装置的半导体装置及其制造方法。 MTJ装置由层叠结构形成，其通过依次层叠下磁性膜，隧道绝缘膜和上磁性膜而获得。下部和上部磁性膜含有非结晶或微晶铁硼（CoFeB）作为构成材料。隧道绝缘膜包含氧化铝（AlOx）作为构成材料。在上磁性膜上形成CAP层，在CAP层上形成硬掩模。 CAP层包含结晶钌（Ru）作为构成材料的物质，硬掩模含有结晶钽（Ta）作为构成材料的物质。硬掩模的膜厚大于CAP层的膜厚。

5. 发明授权

US08013407B2 Magnetic memory device having a recording layer 有权
标题翻译：具有记录层的磁存储器件
公开(公告)号：US08013407B2
公开(公告)日：2011-09-06
申请号：US12399760
申请日：2009-03-06
申请人： Takashi Takenaga , Takeharu Kuroiwa , Hiroshi Takada , Shuichi Ueno , Kiyoshi Kawabata
发明人： Takashi Takenaga , Takeharu Kuroiwa , Hiroshi Takada , Shuichi Ueno , Kiyoshi Kawabata
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L27/228 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： There is provided a magnetic memory device stable in write characteristics. The magnetic memory device has a recording layer. The planar shape of the recording layer has the maximum length in the direction of the easy-axis over a primary straight line along the easy-axis, and is situated over a length smaller than the half of the maximum length in the direction perpendicular to the easy-axis, and on the one side and on the other side of the primary straight line respectively, the planar shape has a first part situated over a length in the direction perpendicular to the easy-axis, and a second part situated over a length smaller than the length in the direction perpendicular to the easy-axis. The outer edge of the first part includes only a smooth curve convex outwardly of the outer edge.
摘要翻译：提供了一种在写特性上稳定的磁存储器件。磁存储器件具有记录层。记录层的平面形状沿着容易轴在易于轴的方向上在主直线上具有最大长度，并且位于比垂直于该方向的方向上的最大长度的一半长度分别在主直线的一侧和另一侧上，平面形状具有位于垂直于易轴的方向上的长度的第一部分，以及位于长度方向上的第二部分小于垂直于易轴方向的长度。第一部分的外边缘仅包括从外边缘向外凸出的平滑曲线。

6. 发明申请

US20100193831A1 EPOXY RESIN COMPOSITION, CURED OBJECT OBTAINED THEREFROM, AND LIGHT-EMITTING DIODE 有权
标题翻译：环氧树脂组合物，由其获得的固化对象和发光二极管
公开(公告)号：US20100193831A1
公开(公告)日：2010-08-05
申请号：US12678166
申请日：2008-09-22
申请人： Takashi Sato , Shuichi Ueno , Takeshi Koyama
发明人： Takashi Sato , Shuichi Ueno , Takeshi Koyama
IPC分类号： H01L23/29 , C08L63/00 , C08K5/13
CPC分类号： C08G59/24 , C08G59/226 , C08G59/42 , C08L63/00 , H01L33/56 , H01L51/5237 , H01L51/5246 , C08L2666/22
摘要： Provided are an epoxy resin composition including acid anhydrides (A) and epoxy resins (B), in which: (a) cyclohexane-1,2,4-tricarboxylic acid-1,2-anhydride accounts for 50 to 90 mass % of the acid anhydrides (A); (b) an alicyclic epoxy resin compound accounts for 30 to 90 mass % of the epoxy resins (B) and an epoxy resin compound represented by the following general formula (1) accounts for 10 to 50 mass % of the epoxy resins (B); and (c) contents of the acid anhydrides (A) and the epoxy resins (B) are such that a blending equivalent ratio between the acid anhydrides and the epoxy resins ranges from 0.4 to 0.7, a cured product of the composition, and a light-emitting diode. The epoxy resin composition has the following characteristics. That is, (1) the composition has a low viscosity after the mixing, a low degree of viscosity increase in standing at room temperature, and excellent workability, (2) the composition has satisfactory curability even when no curing accelerator is added, and (3) a cured product is colorless and transparent, has crack resistance, and changes its color to a small extent with long-term light irradiation and heating. The composition is suitable for an encapsulant for a photoelectric conversion element such as a blue LED or white LED. (In the formula, R's each independently represent a hydrogen atom or a methyl group, m represents an integer of 1 to 3, and n represents an integer of 2 to 8.)
摘要翻译：提供一种包含酸酐（A）和环氧树脂（B））的环氧树脂组合物，其中：（a）环己烷-1,2,4-三羧酸-1,2-酐占50〜90质量％酸酐（A）; （b）环氧树脂（B）的脂环族环氧树脂化合物占30〜90质量％，由通式（1）表示的环氧树脂化合物占环氧树脂（B）的10〜50质量％ ; 和（c）酸酐（A）和环氧树脂（B）的含量使得酸酐与环氧树脂的混合当量比为0.4〜0.7，组合物的固化物和光发光二极管。环氧树脂组合物具有以下特征。也就是说，（1）组合物在混合后具有低粘度，在室温下的静置粘度增加低，加工性优异，（2）即使不加入固化促进剂，组合物也具有令人满意的固化性，（ 3）固化产物无色透明，具有抗裂性，并在长时间的光照射和加热下颜色变化很小。该组合物适用于诸如蓝色LED或白色LED的光电转换元件的密封剂。（式中，R 3各自独立地表示氢原子或甲基，m表示1〜3的整数，n表示2〜8的整数。）

7. 发明申请

US20090250776A1 MAGNETIC MEMORY DEVICE 有权
标题翻译：磁记忆装置
公开(公告)号：US20090250776A1
公开(公告)日：2009-10-08
申请号：US12399760
申请日：2009-03-06
申请人： Takashi Takenaga , Takeharu Kuroiwa , Hiroshi Takada , Shuichi Ueno , Kiyoshi Kawabata
发明人： Takashi Takenaga , Takeharu Kuroiwa , Hiroshi Takada , Shuichi Ueno , Kiyoshi Kawabata
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： There is provided a magnetic memory device stable in write characteristics. The magnetic memory device has a recording layer. The planar shape of the recording layer has the maximum length in the direction of the easy-axis over a primary straight line along the easy-axis, and is situated over a length smaller than the half of the maximum length in the direction perpendicular to the easy-axis, and on the one side and on the other side of the primary straight line respectively, the planar shape has a first part situated over a length in the direction perpendicular to the easy-axis, and a second part situated over a length smaller than the length in the direction perpendicular to the easy-axis. The outer edge of the first part includes only a smooth curve convex outwardly of the outer edge.
摘要翻译：提供了一种写入特性稳定的磁存储器件。磁存储器件具有记录层。记录层的平面形状沿着容易轴在易于轴的方向上在主直线上具有最大长度，并且位于比垂直于该方向的方向上的最大长度的一半长度分别在主直线的一侧和另一侧上，平面形状具有位于垂直于易轴的方向上的长度的第一部分，以及位于长度方向上的第二部分小于垂直于易轴方向的长度。第一部分的外边缘仅包括从外边缘向外凸出的平滑曲线。

8. 发明申请

US20090237989A1 MAGNETIC MEMORY DEVICE 审中-公开
标题翻译：磁记忆装置
公开(公告)号：US20090237989A1
公开(公告)日：2009-09-24
申请号：US12476536
申请日：2009-06-02
申请人： Yoshinori OKUMURA , Shuichi Ueno , Haruo Furuta
发明人： Yoshinori OKUMURA , Shuichi Ueno , Haruo Furuta
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/15 , G11C11/1659 , G11C11/1675 , H01L27/228
摘要： A width and a thickness of a bit line are represented as W1 and T1, respectively, a thickness of a digit line is represented as T2, and a distance from a center of the digit line in a thickness direction to a center of a free layer of an MTJ element in the thickness direction is represented as L1. A width of the digit line is represented as W2, and a distance from a center of the bit line in the thickness direction to the center of the free layer of the MTJ element in the thickness direction is represented as L2. The distances L1 and L2 and the cross-sectional areas S1 and S2 are set in such a manner that when L1/L2≧1, a relation of (1/3)·(L1/L2)≦S2/S1≦1 is satisfied and when L1/L2≦1, a relation of 1≦S2/S1≦3(L1/L2) is satisfied.
摘要翻译：位线的宽度和厚度分别表示为W1和T1，数字线的厚度表示为T2，从数字线的中心到厚度方向的中心到自由层的中心的距离的厚度方向上的MTJ元件表示为L1。数字线的宽度表示为W2，从厚度方向的位线的中心到厚度方向的MTJ元件的自由层的中心的距离表示为L2。距离L1和L2以及横截面积S1和S2以如下方式设定：当L1 / L2> = 1时，（1/3）（L1 / L2）<= S2 / S1 <= 1，并且当L1 / L2 <= 1时，满足1 <= S2 / S1 <= 3（L1 / L2）的关系。

9. 发明申请

US20080266939A1 Magnetic memory device 失效
标题翻译：磁存储器件
公开(公告)号：US20080266939A1
公开(公告)日：2008-10-30
申请号：US12213505
申请日：2008-06-20
申请人： Yoshinori Okumura , Shuichi Ueno , Haruo Furuta
发明人： Yoshinori Okumura , Shuichi Ueno , Haruo Furuta
IPC分类号： G11C11/02
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/15 , G11C11/1659 , G11C11/1675 , H01L27/228
摘要： A width and a thickness of a bit line are represented as W1 and T1, respectively, a thickness of a digit line is represented as T2, and a distance from a center of the digit line in a thickness direction to a center of a free layer of an MTJ element in the thickness direction is represented as L1. A width of the digit line is represented as W2, and a distance from a center of the bit line in the thickness direction to the center of the free layer of the MTJ element in the thickness direction is represented as L2. The distances L1 and L2 and the cross-sectional areas S1 and S2 are set in such a manner that when L1/L2≧1, a relation of (⅓)·(L1/L2)≦S2/S1≦1 is satisfied and when L1/L2≦1, a relation of 1≦S2/S1≦3(L1/L2) is satisfied.
摘要翻译：位线的宽度和厚度分别表示为W 1和T 1，数字线的厚度表示为T 2，并且从数字线的中心到厚度方向的中心的距离在厚度方向上的MTJ元件的自由层表示为L 1。数字线的宽度表示为W 2，并且从厚度方向的位线的中心到厚度方向上的MTJ元件的自由层的中心的距离表示为L 2。距离L 1和L 2以及横截面积S 1和S 2被设定为当L 1 / L 2> = 1时，关于（1/3）（L 1 / L 2 ）满足<= S 2 / S 1 <= 1，并且当L 1 / L 2 <= 1时，满足1 <= S 2 / S 1 <= 3（L 1 / L 2）的关系。

10. 发明申请

US20080168649A1 Magnetic recording element and method of manufacturing magnetic recording element 审中-公开
标题翻译：磁记录元件及制造磁记录元件的方法
公开(公告)号：US20080168649A1
公开(公告)日：2008-07-17
申请号：US12076151
申请日：2008-03-14
申请人： Shinroku Maejima , Shuichi Ueno , Takashi Takenaga , Takeharu Kuroiwa
发明人： Shinroku Maejima , Shuichi Ueno , Takashi Takenaga , Takeharu Kuroiwa
IPC分类号： G11B5/127
CPC分类号： H01L43/12 , G11C11/16 , H01L27/228 , Y10T29/49041 , Y10T29/49048
摘要： A photolithographic process using an X-direction delimiting mask (S11) for aligning respective side faces of a TMR element (1) and a strap (5) situated in a negative X side is performed, to shape the TMR element (1) and the strap (5) into desired configurations. The X-direction delimiting mask (S11) includes a straight edge and is disposed such that the straight edge is parallel to a Y direction and crosses both the TMR element (1) and the strap (5) in plan view. In use of the X-direction delimiting mask (S11), respective portions of the TMR element (1) and the strap (5) situated in a positive X side relative to the straight edge in plan view are covered with the X-direction delimiting mask (S11).
摘要翻译：执行使用用于对准位于负X侧的TMR元件（1）和带（5）的各个侧面的X方向限制掩模（S11）的光刻工艺，以使TMR元件（1）和带（5）成为所需的配置。 X方向限制掩模（S11）包括直边并且被设置为使得直边平行于Y方向，并且在平面图中与TMR元件（1）和带（5）交叉。在使用X方向限制掩模（S11）时，在平面图中相对于直边缘位于正X侧的TMR元件（1）和带子（5）的各个部分被X方向限定掩模（S11）。

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