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1. 发明授权

US07145930B2 Semiconductor laser device and method for fabricating the same 有权
公开(公告)号：US07145930B2
公开(公告)日：2006-12-05
申请号：US10867731
申请日：2004-06-16
申请人： Yukio Honkawa , Takahiro Ono , Satoshi Hattori , Yoshihiro Sato
发明人： Yukio Honkawa , Takahiro Ono , Satoshi Hattori , Yoshihiro Sato
IPC分类号： H01S5/00
CPC分类号： H01L21/02392 , H01L21/02461 , H01L21/02505 , H01L21/02543 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02664 , H01S5/2206 , H01S5/2222 , H01S5/2223 , H01S5/227 , H01S5/2275 , H01S5/32308 , H01S2304/04
摘要： A method for fabricating a buried semiconductor laser device including the steps of: forming a mesa structure including a bottom cladding layer, an active layer and a top cladding layer overlying an n-type semiconductor substrate; and forming a current confinement structure by growing a p-type current blocking layer and an n-type current blocking layer on each side surface of the mesa structure and on a skirt portion extending from the each side surface, the p-type current blocking layer being fabricated by using a raw material gas containing a group III element gas and a group V element gas at a molar ratio between 60 and 350 inclusive. In this method, the semiconductor laser device including the current confinement structure with the specified leakage current path width can be fabricated with the excellent reproducibility.

2. 发明申请

US20050002431A1 Semiconductor laser device and method for fabricating the same 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20050002431A1
公开(公告)日：2005-01-06
申请号：US10867731
申请日：2004-06-16
申请人： Yukio Honkawa , Takahiro Ono , Satoshi Hattori , Yoshihiro Sato
发明人： Yukio Honkawa , Takahiro Ono , Satoshi Hattori , Yoshihiro Sato
IPC分类号： H01S5/22 , H01S5/227 , H01S5/323 , H01S5/00
CPC分类号： H01L21/02392 , H01L21/02461 , H01L21/02505 , H01L21/02543 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02664 , H01S5/2206 , H01S5/2222 , H01S5/2223 , H01S5/227 , H01S5/2275 , H01S5/32308 , H01S2304/04
摘要： A method for fabricating a buried semiconductor laser device including the steps of: forming a mesa structure including a bottom cladding layer, an active layer and a top cladding layer overlying an n-type semiconductor substrate; and forming a current confinement structure by growing a p-type current blocking layer and an n-type current blocking layer on each side surface of the mesa structure and on a skirt portion extending from the each side surface, the p-type current blocking layer being fabricated by using a raw material gas containing a group III element gas and a group V element gas at a molar ratio between 60 and 350 inclusive. In this method, the semiconductor laser device including the current confinement structure with the specified leakage current path width can be fabricated with the excellent reproducibility.
摘要翻译：一种掩埋半导体激光器件的制造方法，包括以下步骤：形成包括覆盖在n型半导体衬底上的底部包层，有源层和顶部覆层的台面结构; 并且通过在台面结构的每个侧表面上和从每个侧表面延伸的裙部上生长p型电流阻挡层和n型电流阻挡层来形成电流限制结构，p型电流阻挡层通过使用含有III族元素气体和V族元素气体的原料气体，其摩尔比在60和350（含）之间。在该方法中，可以以优异的再现性制造包括具有规定的漏电流路径宽度的电流限制结构的半导体激光装置。

3. 发明授权

US06768759B2 Semiconductor laser device and method for fabricating the same 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US06768759B2
公开(公告)日：2004-07-27
申请号：US09997306
申请日：2001-11-28
申请人： Yukio Honkawa , Takahiro Ono , Satoshi Hattori , Yoshihiro Sato
发明人： Yukio Honkawa , Takahiro Ono , Satoshi Hattori , Yoshihiro Sato
IPC分类号： H01S522
CPC分类号： H01L21/02392 , H01L21/02461 , H01L21/02505 , H01L21/02543 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02664 , H01S5/2206 , H01S5/2222 , H01S5/2223 , H01S5/227 , H01S5/2275 , H01S5/32308 , H01S2304/04
摘要： A method for fabricating a buried semiconductor laser device including the steps of: forming a mesa structure including a bottom cladding layer, an active layer and a top cladding layer overlying an n-type semiconductor substrate; and forming a current confinement structure by growing a p-type current blocking layer and an n-type current blocking layer on each side surface of the mesa structure and on a skirt portion extending from the each side surface, the p-type current blocking layer being fabricated by using a raw material gas containing a group III element gas and a group V element gas at a molar ratio between 60 and 350 inclusive. In this method, the semiconductor laser device including the current confinement structure with the specified leakage current path width can be fabricated with the excellent reproducibility.
摘要翻译：一种掩埋半导体激光器件的制造方法，包括以下步骤：形成包括覆盖在n型半导体衬底上的底部包层，有源层和顶部覆层的台面结构; 并且通过在台面结构的每个侧表面上和从每个侧表面延伸的裙部上生长p型电流阻挡层和n型电流阻挡层来形成电流限制结构，p型电流阻挡层通过使用含有III族元素气体和V族元素气体的原料气体，其摩尔比在60和350（含）之间。在该方法中，可以以优异的再现性制造包括具有规定的漏电流路径宽度的电流限制结构的半导体激光装置。

4. 发明授权

US07563630B2 Method for fabricating a semiconductor laser device that includes growing current confinement layers and a mesa side surface 失效
标题翻译：一种制造半导体激光器件的方法，包括生长电流限制层和台面侧表面
公开(公告)号：US07563630B2
公开(公告)日：2009-07-21
申请号：US11581006
申请日：2006-10-16
申请人： Yukio Honkawa , Takahiro Ono , Satoshi Hattori , Yoshihiro Sato
发明人： Yukio Honkawa , Takahiro Ono , Satoshi Hattori , Yoshihiro Sato
IPC分类号： H01L21/205 , H01L33/00
CPC分类号： H01L21/02392 , H01L21/02461 , H01L21/02505 , H01L21/02543 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02664 , H01S5/2206 , H01S5/2222 , H01S5/2223 , H01S5/227 , H01S5/2275 , H01S5/32308 , H01S2304/04
摘要： A method for fabricating a buried semiconductor laser device including the steps of: forming a mesa structure including a bottom cladding layer, an active layer and a top cladding layer overlying an n-type semiconductor substrate; and forming a current confinement structure by growing a p-type current blocking layer and an n-type current blocking layer on each side surface of the mesa structure and on a skirt portion extending from the each side surface, the p-type current blocking layer being fabricated by using a raw material gas containing a group III element gas and a group V element gas at a molar ratio between 60 and 350 inclusive. In this method, the semiconductor laser device including the current confinement structure with the specified leakage current path width can be fabricated with the excellent reproducibility.
摘要翻译：一种掩埋半导体激光器件的制造方法，包括以下步骤：形成包括覆盖在n型半导体衬底上的底部包层，有源层和顶部覆层的台面结构; 并且通过在台面结构的每个侧表面上和从每个侧表面延伸的裙部上生长p型电流阻挡层和n型电流阻挡层来形成电流限制结构，p型电流阻挡层通过使用含有III族元素气体和V族元素气体的原料气体，其摩尔比在60和350（含）之间。在该方法中，可以以优异的再现性制造包括具有规定的漏电流路径宽度的电流限制结构的半导体激光装置。

5. 发明申请

US20070031985A1 Semiconductor laser device and method for fabricating the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20070031985A1
公开(公告)日：2007-02-08
申请号：US11581006
申请日：2006-10-16
申请人： Yukio Honkawa , Takahiro Ono , Satoshi Hattori , Yoshihiro Sato
发明人： Yukio Honkawa , Takahiro Ono , Satoshi Hattori , Yoshihiro Sato
IPC分类号： H01L21/20
CPC分类号： H01L21/02392 , H01L21/02461 , H01L21/02505 , H01L21/02543 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02664 , H01S5/2206 , H01S5/2222 , H01S5/2223 , H01S5/227 , H01S5/2275 , H01S5/32308 , H01S2304/04
摘要： A method for fabricating a buried semiconductor laser device including the steps of: forming a mesa structure including a bottom cladding layer, an active layer and a top cladding layer overlying an n-type semiconductor substrate; and forming a current confinement structure by growing a p-type current blocking layer and an n-type current blocking layer on each side surface of the mesa structure and on a skirt portion extending from the each side surface, the p-type current blocking layer being fabricated by using a raw material gas containing a group III element gas and a group V element gas at a molar ratio between 60 and 350 inclusive. In this method, the semiconductor laser device including the current confinement structure with the specified leakage current path width can be fabricated with the excellent reproducibility.
摘要翻译：一种掩埋半导体激光器件的制造方法，包括以下步骤：形成包括覆盖在n型半导体衬底上的底部包层，有源层和顶部覆层的台面结构; 并且通过在台面结构的每个侧表面上和从每个侧表面延伸的裙部上生长p型电流阻挡层和n型电流阻挡层来形成电流限制结构，p型电流阻挡层通过使用含有III族元素气体和V族元素气体的原料气体，其摩尔比在60和350（含）之间。在该方法中，可以以优异的再现性制造包括具有规定的漏电流路径宽度的电流限制结构的半导体激光装置。

6. 发明申请

US20100032653A1 Carbon Nanotube Electric Field Effect Transistor and Process for Producing the Same 审中-公开
标题翻译：碳纳米管电场效应晶体管及其制造方法
公开(公告)号：US20100032653A1
公开(公告)日：2010-02-11
申请号：US12225729
申请日：2007-03-28
申请人： Seiji Takeda , Koichi Mukasa , Atsushi Ishii , Hiroichi Ozaki , Makoto Sawamura , Hirotaka Hosoi , Satoshi Hattori , Yoshiki Yamada , Kazuhisa Sueoka
发明人： Seiji Takeda , Koichi Mukasa , Atsushi Ishii , Hiroichi Ozaki , Makoto Sawamura , Hirotaka Hosoi , Satoshi Hattori , Yoshiki Yamada , Kazuhisa Sueoka
IPC分类号： H01L29/66 , H01L21/336
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L51/0003 , H01L51/0048 , H01L51/0049 , H01L51/0545 , H01L51/0558
摘要： This invention provides a process for producing a carbon nanotube electric field effect transistor that can improve yield in channel preparation. Carbon nanotubes dispersed in a mixed acid composed of sulfuric acid and nitric acid are subjected to radical treatment with aqueous hydrogen peroxide to cut the carbon nanotubes and thus to provide carboxyl-introduced carbon nanotube fragments. The carbon nanotube fragments are attached, through a covalent bond and/or an electrostatic bond, to a site, where a source electrode is to be formed, and a site where a drain electrode is to be formed, in a substrate with a functional group, to be attached to a carboxyl group, introduced thereinto. The carbon nanotube fragments attached to the substrate are attached to carbon nanotubes as channels through n-n interaction to fix the carbon nanotubes as channels to the substrate.
摘要翻译：本发明提供一种可以提高通道制备中的产率的碳纳米管电场效应晶体管的制造方法。分散在由硫酸和硝酸组成的混合酸中的碳纳米管用过氧化氢水溶液进行自由基处理以切割碳纳米管，从而提供引入羧基的碳纳米管片段。通过共价键和/或静电键将碳纳米管片段附着到具有官能团的基板中的要形成源电极的位置和要形成漏电极的位置，连接到羧基上。附着在基板上的碳纳米管碎片通过n-n相互作用作为通道附着到碳纳米管上，以将碳纳米管作为通道固定在基材上。

7. 发明申请

US20080211830A1 Apparatus and Method for Video Signal Conversion 审中-公开
标题翻译：视频信号转换的装置和方法
公开(公告)号：US20080211830A1
公开(公告)日：2008-09-04
申请号：US12021121
申请日：2008-01-28
申请人： Hirotoshi Abe , Satoshi Hattori
发明人： Hirotoshi Abe , Satoshi Hattori
IPC分类号： G09G5/02
CPC分类号： G09G5/04 , G09G2360/02 , H04N5/4401 , H04N5/46 , H04N9/642 , H04N9/67 , H04N9/73 , H04N11/20 , H04N21/42638 , H04N21/43635 , H04N21/4402
摘要： According to one embodiment, there is provided a video signal conversion apparatus including a determination unit which receives a video signal to determine whether the video signal is an xvYCC standard video signal or a YCBCR standard video signal, a first conversion unit which converts the xvYCC standard video signal into an RGB standard video signal to output the RGB standard video signal when the determination unit determines that the video signal is the xvYCC standard video signal, and a second conversion unit which converts the YCBCR standard video signal into the RGB standard video signal to output the RGB standard video signal when the determination unit determines that the video signal is the YCBCR standard video signal.
摘要翻译：根据一个实施例，提供了一种视频信号转换装置，其包括确定单元，其接收视频信号以确定视频信号是否是xvYCC标准视频信号或YC B C R R 标准视频信号，当确定单元确定视频信号是xvYCC标准视频信号时，将xvYCC标准视频信号转换为RGB标准视频信号以输出RGB标准视频信号的第一转换单元，以及第二转换单元，其在所述确定单元确定所述视频信号是所述RGB标准视频信号时将所述YC标准视频信号转换为RGB标准视频信号以输出所述RGB标准视频信号 YC标准视频信号。

8. 发明申请

US20070272199A1 Reverse Rotation Preventing Mechanism For Diesel Engine 有权
标题翻译：柴油机反转防止机构
公开(公告)号：US20070272199A1
公开(公告)日：2007-11-29
申请号：US10577236
申请日：2004-08-20
申请人： Katsuyuki Shiota , Yasuhiro Kanazu , Satoshi Hattori
发明人： Katsuyuki Shiota , Yasuhiro Kanazu , Satoshi Hattori
IPC分类号： F02M59/10
CPC分类号： F01L1/08 , F01L13/02 , F01L13/04 , F02M39/02 , F02M59/102
摘要： The invention prevents reverse rotation of a diesel engine which is possible to occur when the engine is started. A camshaft 13 is driven by a crankshaft 5 through power transmission means, and cams 14, 21 and 22 are provided on camshaft 13 so as to drive a fuel injection pump 12, an intake vale and an exhaust valve, respectively. In fuel injection pump cam 14, middle stage portion 53 is radially larger than minimum radius portion 51 and disposed at a predetermined angle R3 on the back side in the rotation direction from maximum radius portion 52.
摘要翻译：本发明防止了当发动机起动时可能发生的柴油发动机的反向旋转。凸轮轴13由曲轴5通过动力传递装置驱动，并且凸轮14,21和22设置在凸轮轴13上，以分别驱动燃料喷射泵12，进气门和排气门。在燃料喷射泵凸轮14中，中间台部53径向地大于最小半径部51，并且在最大半径部52的旋转方向的背面侧以规定角度R 3配置。

9. 发明申请

US20070172742A1 Volume hologram recording material and volume hologram recording medium 审中-公开
标题翻译：体积全息图记录材料和体积全息图记录介质
公开(公告)号：US20070172742A1
公开(公告)日：2007-07-26
申请号：US10589285
申请日：2005-02-09
申请人： Kentarou Yachi , Shin Satou , Satoshi Hattori , Eiichi Okazaki
发明人： Kentarou Yachi , Shin Satou , Satoshi Hattori , Eiichi Okazaki
IPC分类号： G03H1/02
CPC分类号： G03F7/035 , G03F7/001 , G03H1/0248 , G03H1/0256 , G03H2250/37 , G03H2250/42 , G03H2260/12
摘要： A volume hologram recording material is provided that has high sensitivity, good storage stability after recording, and a large interference fringe refractive index difference, the material being used for forming a volume hologram recording film desirable as a data recording system. A volume hologram recording medium comprising same is also provided. The volume hologram recording material is a polymer matrix having a three-dimensional crosslinking structure having a plurality of reactive groups, the polymer matrix being capable of recording, by means of refractive index difference, interference fringes that result from the interference of coherent light, the material not having a polymerizable monomer as a constituent.
摘要翻译：提供了一种体积全息图记录材料，其具有高灵敏度，良好的记录后的储存稳定性和大的干涉条纹折射率差，该材料用于形成作为数据记录系统所需的体积全息图记录膜。还提供了包括其的体积全息图记录介质。体积全息图记录材料是具有具有多个反应性基团的三维交联结构的聚合物基质，聚合物基质能够通过折射率差记录由相干光的干涉引起的干涉条纹，不具有聚合性单体作为成分的材料。

10. 发明授权

US06722335B2 Vehicle intake manifolds 有权
标题翻译：车辆进气歧管
公开(公告)号：US06722335B2
公开(公告)日：2004-04-20
申请号：US10315933
申请日：2002-12-11
申请人： Kazuhisa Nomura , Satoshi Hattori
发明人： Kazuhisa Nomura , Satoshi Hattori
IPC分类号： F02M3510
CPC分类号： F02B27/021 , F02B27/0242 , F02B27/0252 , F02B27/0273 , F02B27/0294 , F02B2075/1824 , F02D9/101 , F02D9/1045 , Y02T10/146
摘要： Air intake manifolds (32) for vehicle engines (50) may include a plate-shaped short runner valve (16) that is rotatably disposed within an aperture (19) of a wall partition (42). The valve (16) may be operated to open and close the aperture. A flange (22) may extend from an inner surface of the aperture and the flange may define a sealing face (22b). An elastic sealing member (21) may be disposed along a peripheral edge of the valve. The sealing member may include first and second projections (21a, 21b) extending from the peripheral edge of the valve. The first and second projections may be arranged in a substantially V-shape. Further, the terminal ends of the first and second projections are preferably disposed so as to closely contact the sealing face when the valve is rotated to the closed position.
摘要翻译：用于车辆发动机（50）的进气歧管（32）可以包括可旋转地设置在壁分隔件（42）的孔（19）内的板形短流道阀（16）。可以操作阀（16）以打开和关闭孔。凸缘（22）可以从孔的内表面延伸并且凸缘可以限定密封面（22b）。弹性密封构件（21）可以沿着阀的周边边缘设置。密封构件可以包括从阀的周缘延伸的第一和第二突起（21a，21b）。第一和第二突起可以布置成大致V形。此外，第一突起和第二突起的末端优选地设置成当阀旋转到关闭位置时紧密接触密封面。

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