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    • 8. 发明授权
    • Semiconductor integrated circuit
    • 半导体集成电路
    • US08093623B2
    • 2012-01-10
    • US12588891
    • 2009-11-02
    • Kouzou MawatariMotoyasu Yano
    • Kouzou MawatariMotoyasu Yano
    • H01L29/66
    • H01L27/0259H01L2924/0002H01L2924/00
    • Disclosed herein is a semiconductor integrated circuit including a protected circuit; and a protection element formed on the same semiconductor substrate as the protected circuit and adapted to protect the protected circuit, wherein the protection element includes two diodes having their anodes connected together to form a floating node and two cathodes connected to the protected circuit, the two diodes are formed in a well-in-well structure on the semiconductor substrate, and the well-in-well structure includes a P-type well forming the floating gate, an N-type well which surrounds the surfaces of the P-type well other than that on the front side of the substrate with the deep portion side of the substrate so as to form the cathode of one of the diodes, and a first N-type region formed in the P-type well so as to form the cathode of the other diode.
    • 本文公开了包括受保护电路的半导体集成电路; 以及保护元件,形成在与受保护电路相同的半导体衬底上并且适于保护受保护电路,其中保护元件包括两个二极管,其二极管的阳极连接在一起形成浮动节点,并且两个阴极连接到受保护电路, 二极管形成在半导体衬底上的阱内结构中,阱阱结构包括形成浮栅的P型阱,围绕P型阱的表面的N型阱 除了在衬底的具有衬底的深部侧的正面的侧面以形成二极管中的一个的阴极以及形成在P型阱中以形成阴极的第一N型区域 的另一个二极管。