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    • 5. 发明授权
    • Photoelectric conversion device and solid-state image sensing device using the same
    • 光电转换装置及使用其的固态摄像装置
    • US06936806B1
    • 2005-08-30
    • US09704539
    • 2000-11-03
    • Ken KitamuraYoshinori Hatanaka
    • Ken KitamuraYoshinori Hatanaka
    • H01L31/107H01L27/00H01L27/146H01L27/148H01L31/105
    • H01L27/14643H01L31/1055
    • Disclosed is a photoelectric conversion device having a multiplying function and an image sensing device using the same. The photoelectric conversion device essentially comprises three layered structure: a carrier generation/multiplication layer composed of amorphous silicon to have both the function of absorbing light and generating carriers through optical excitation and the function of multiplying the generated carriers; an electron injection inhibiting layer composed of an amorphous silicon carbide of the p-type conductivity to inhibit injection of electrons into the carrier generation/multiplication layer; and a hole injection inhibiting layer composed of an amorphous silicon nitride of the n-type conductivity to inhibit injection of holes into the carrier generation/multiplication layer. The said carrier generation/multiplication layer is provided between said electron injection inhibiting layer and said hole injection inhibiting layer.
    • 公开了具有倍增功能的光电转换装置和使用其的图像感测装置。 光电转换装置基本上包括三层结构:由非晶硅构成的载流子生成/乘积层,具有通过光激发吸收光和产生载流子的功能和乘以所产生的载流子的功能; 电子注入抑制层,其由具有p型导电性的非晶碳化硅构成,以阻止电子注入到载流子产生/倍增层中; 以及由n型导电性的非晶氮化硅组成的空穴注入抑制层,以抑制空穴注入到载体产生/倍增层中。 所述载体生成/倍增层设置在所述电子注入抑制层和所述空穴注入抑制层之间。