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1. 发明申请

US20110102648A1 Imaging Apparatus and method, electronic device, and program 有权
标题翻译：成像设备和方法，电子设备和程序
公开(公告)号：US20110102648A1
公开(公告)日：2011-05-05
申请号：US12805520
申请日：2010-08-04
申请人： Kazuki Nomoto , Akihiro Nakamura , Takashi Kubodera , Kaneyoshi Takeshita , Yukihiro Kiyota
发明人： Kazuki Nomoto , Akihiro Nakamura , Takashi Kubodera , Kaneyoshi Takeshita , Yukihiro Kiyota
IPC分类号： H04N9/64
CPC分类号： H04N5/3675
摘要： An imaging apparatus includes: an imaging unit configured to image an image using an imaging device; an image obtaining unit configured to obtain a plurality of images equivalent to the time of dark, imaged by the imaging unit; a registering unit configured to register, with an image obtained by the image obtaining unit, the address and change amount of a pixel where the output value of the pixel changes so as to exceed a predetermined threshold; and a correcting unit configured to correct, when taking a pixel corresponding to an address registered by the registering unit as a processing object pixel, the pixel value of the processing object pixel based on comparison between difference of the output values of the processing object pixel and a peripheral pixel of the processing object pixel, and the change amount of the processing object pixel.
摘要翻译：一种成像装置，包括：成像单元，被配置为使用成像装置对图像进行成像; 图像获取单元，被配置为获得由所述成像单元成像的等于黑暗时间的多个图像; 注册单元，被配置为用图像获取单元获得的图像登记像素的输出值改变以超过预定阈值的像素的地址和变化量; 以及校正单元，被配置为基于通过所述处理对象像素的输出值的差异与所述处理对象像素的输出值的差异来对所述处理对象像素的像素值进行比较，当对应于由所述登记单元登记的地址的像素作为处理对象像素时，处理对象像素的周边像素和处理对象像素的变化量。

2. 发明授权

US08629385B2 Solid-state imaging element and driving method of the solid-state imaging element 有权
标题翻译：固态成像元件和固态成像元件的驱动方法
公开(公告)号：US08629385B2
公开(公告)日：2014-01-14
申请号：US12705161
申请日：2010-02-12
申请人： Kaneyoshi Takeshita , Takashi Kubodera , Akihiro Nakamura
发明人： Kaneyoshi Takeshita , Takashi Kubodera , Akihiro Nakamura
IPC分类号： H01L27/00
CPC分类号： H01L27/14647 , H01L27/14609 , H01L27/1463 , H01L27/14641
摘要： Disclosed herein is a solid-state imaging element including: (A) a light reception/charge storage region formed in a semiconductor layer, the light reception/charge storage region including M light reception/charge storage layers stacked one on top of the other, where M≧2; (B) a charge output region formed in the semiconductor layer; (C) a conduction/non-conduction control region which includes a portion of the semiconductor layer located between the light reception/charge storage region and the charge output region; and (D) a conduction/non-conduction control electrode adapted to control the conduction or non-conduction state of the conduction/non-conduction control region, wherein mth potential control electrodes are provided between the mth and (m+1)th light reception/charge storage layers, where 1≦m≦(M−1), to control the potentials of the light reception/charge storage layers.
摘要翻译：本发明公开了一种固态成像元件，包括：（A）形成在半导体层中的光接收/电荷存储区域，所述光接收/电荷存储区域包括一个层叠在一起的M个光接收/电荷存储层，其中M> = 2; （B）形成在半导体层中的电荷输出区域; （C）导电/非导通控制区域，其包括位于光接收/电荷存储区域和电荷输出区域之间的半导体层的一部分; 和（D）适于控制导通/非导通控制区域的导通或非导通状态的导通/非导通控制电极，其中第m电位控制电极设置在第m和第（m + 1）个光接收/电荷存储层，其中1 @ m @（M-1），以控制光接收/电荷存储层的电位。

3. 发明授权

US08466990B2 Imaging apparatus and method, electronic device, and program 有权
标题翻译：成像设备和方法，电子设备和程序
公开(公告)号：US08466990B2
公开(公告)日：2013-06-18
申请号：US12805520
申请日：2010-08-04
申请人： Kazuki Nomoto , Akihiro Nakamura , Takashi Kubodera , Kaneyoshi Takeshita , Yukihiro Kiyota
发明人： Kazuki Nomoto , Akihiro Nakamura , Takashi Kubodera , Kaneyoshi Takeshita , Yukihiro Kiyota
IPC分类号： H04N5/217 , H04N5/228 , H04N9/64 , H04N3/14 , H04N5/335
CPC分类号： H04N5/3675
摘要： An imaging apparatus includes: an imaging unit configured to image an image using an imaging device; an image obtaining unit configured to obtain a plurality of images equivalent to the time of dark, imaged by the imaging unit; a registering unit configured to register, with an image obtained by the image obtaining unit, the address and change amount of a pixel where the output value of the pixel changes so as to exceed a predetermined threshold; and a correcting unit configured to correct, when taking a pixel corresponding to an address registered by the registering unit as a processing object pixel, the pixel value of the processing object pixel based on comparison between difference of the output values of the processing object pixel and a peripheral pixel of the processing object pixel, and the change amount of the processing object pixel.
摘要翻译：一种成像装置，包括：成像单元，被配置为使用成像装置对图像进行成像; 图像获取单元，被配置为获得由所述成像单元成像的等于黑暗时间的多个图像; 注册单元，被配置为用图像获取单元获得的图像登记像素的输出值改变以超过预定阈值的像素的地址和变化量; 以及校正单元，被配置为基于通过所述处理对象像素的输出值的差异与所述处理对象像素的输出值的差异来对所述处理对象像素的像素值进行比较，当对应于由所述登记单元登记的地址的像素作为处理对象像素时，处理对象像素的周边像素和处理对象像素的变化量。

4. 发明授权

US08362412B2 Solid-state image pickup element and driving method thereof 有权
标题翻译：固体摄像元件及其驱动方法
公开(公告)号：US08362412B2
公开(公告)日：2013-01-29
申请号：US12646512
申请日：2009-12-23
申请人： Takashi Kubodera , Akihiro Nakamura , Kaneyoshi Takeshita
发明人： Takashi Kubodera , Akihiro Nakamura , Kaneyoshi Takeshita
IPC分类号： H01L27/00 , H01L27/146
CPC分类号： H01L27/14647 , H01L27/14603 , H01L27/14609 , H01L27/1464 , H01L27/14641 , H01L27/14689
摘要： A solid-state image pickup element includes: (A) a light receiving/charge accumulating region formed in a semiconductor layer and formed by laminating M (where M≧2) light receiving/charge accumulating layers; (B) a charge outputting region formed in the semiconductor layer; (C) a depletion layer forming region formed of a part of the semiconductor layer, the part of the semiconductor layer being situated between the light receiving/charge accumulating region and the charge outputting region; and (D) a control electrode region for controlling a state of formation of a depletion layer in the depletion layer forming region, wherein the solid-state image pickup element further includes a light receiving/charge accumulating layer extending section extending from each light receiving/charge accumulating layer to the depletion layer forming region.
摘要翻译：固体摄像元件包括：（A）形成在半导体层中并通过层叠M（其中M≥2）光接收/电荷累积层形成的光接收/电荷累积区; （B）形成在半导体层中的电荷输出区域; （C）由半导体层的一部分形成的耗尽层形成区域，半导体层的一部分位于光接收/电荷累积区域和电荷输出区域之间; 以及（D）用于控制耗尽层形成区域中的耗尽层的形成状态的控制电极区域，其中所述固态摄像元件还包括从每个光接收/ 电荷累积层到耗尽层形成区域。

5. 发明申请

US20100176277A1 SOLID-STATE IMAGE PICKUP ELEMENT AND DRIVING METHOD THEREOF 有权
标题翻译：固态图像拾取元件及其驱动方法
公开(公告)号：US20100176277A1
公开(公告)日：2010-07-15
申请号：US12646512
申请日：2009-12-23
申请人： Takashi Kubodera , Akihiro Nakamura , Kaneyoshi Takeshita
发明人： Takashi Kubodera , Akihiro Nakamura , Kaneyoshi Takeshita
IPC分类号： H01L27/148 , G01J1/44
CPC分类号： H01L27/14647 , H01L27/14603 , H01L27/14609 , H01L27/1464 , H01L27/14641 , H01L27/14689
摘要： A solid-state image pickup element includes: (A) a light receiving/charge accumulating region formed in a semiconductor layer and formed by laminating M (where M≧2) light receiving/charge accumulating layers; (B) a charge outputting region formed in the semiconductor layer; (C) a depletion layer forming region formed of a part of the semiconductor layer, the part of the semiconductor layer being situated between the light receiving/charge accumulating region and the charge outputting region; and (D) a control electrode region for controlling a state of formation of a depletion layer in the depletion layer forming region, wherein the solid-state image pickup element further includes a light receiving/charge accumulating layer extending section extending from each light receiving/charge accumulating layer to the depletion layer forming region.
摘要翻译：固体摄像元件包括：（A）形成在半导体层中并通过层叠M（其中M≥2）光接收/电荷累积层形成的光接收/电荷累积区; （B）形成在半导体层中的电荷输出区域; （C）由半导体层的一部分形成的耗尽层形成区域，半导体层的一部分位于光接收/电荷累积区域和电荷输出区域之间; 以及（D）用于控制耗尽层形成区域中的耗尽层的形成状态的控制电极区域，其中所述固态摄像元件还包括从每个光接收/ 电荷累积层到耗尽层形成区域。

6. 发明申请

US20100213354A1 SOLID-STATE IMAGING ELEMENT AND DRIVING METHOD OF THE SOLID-STATE IMAGE ELEMENT 有权
标题翻译：固态成像元件和固态图像元件的驱动方法
公开(公告)号：US20100213354A1
公开(公告)日：2010-08-26
申请号：US12705161
申请日：2010-02-12
申请人： Kaneyoshi Takeshita , Takashi Kubodera , Akihiro Nakamura
发明人： Kaneyoshi Takeshita , Takashi Kubodera , Akihiro Nakamura
IPC分类号： H01L31/101
CPC分类号： H01L27/14647 , H01L27/14609 , H01L27/1463 , H01L27/14641
摘要： Disclosed herein is a solid-state imaging element including: (A) a light reception/charge storage region formed in a semiconductor layer, the light reception/charge storage region including M light reception/charge storage layers stacked one on top of the other, where M≧2; (B) a charge output region formed in the semiconductor layer; (C) a conduction/non-conduction control region which includes a portion of the semiconductor layer located between the light reception/charge storage region and the charge output region; and (D) a conduction/non-conduction control electrode adapted to control the conduction or non-conduction state of the conduction/non-conduction control region, wherein mth potential control electrodes are provided between the mth and (m+1)th light reception/charge storage layers, where 1≦m≦(M−1), to control the potentials of the light reception/charge storage layers.
摘要翻译：本发明公开了一种固态成像元件，包括：（A）形成在半导体层中的光接收/电荷存储区域，所述光接收/电荷存储区域包括一个层叠在一起的M个光接收/电荷存储层，其中M≥2; （B）形成在半导体层中的电荷输出区域; （C）导电/非导通控制区域，其包括位于光接收/电荷存储区域和电荷输出区域之间的半导体层的一部分; 和（D）适于控制导通/非导通控制区域的导通或非导通状态的导通/非导通控制电极，其中第m电位控制电极设置在第m和第（m + 1）个光接收/电荷存储层，其中1＆nlE; m＆nlE;（M-1），以控制光接收/电荷存储层的电位。

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