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1. 发明申请

US20120325655A1 A1-BASED ALLOY SPUTTERING TARGET 审中-公开
标题翻译：基于A1的合金喷射目标
公开(公告)号：US20120325655A1
公开(公告)日：2012-12-27
申请号：US13581436
申请日：2011-02-25
申请人： Yuki Iwasaki , Katsushi Matsumoto , Toshiaki Takagi , Mamoru Nagao , Hidetada Makino
发明人： Yuki Iwasaki , Katsushi Matsumoto , Toshiaki Takagi , Mamoru Nagao , Hidetada Makino
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , C22C21/00
摘要： The present invention provides a technique capable of suppressing generation of splash even at high-speed deposition by an Al-based alloy sputtering target containing Ni and a rare earth element, wherein when crystallographic orientations , , , and in a normal direction of each sputtering surface at a surface part of the Al-based alloy sputtering target, a ¼×t (t: thickness of the Al-based alloy sputtering target) part thereof and a ½×t part thereof are observed by an electron backscatter diffraction pattern method, the Al-based alloy sputtering target satisfies the requirement (1) that, when a total of area fractions of the ±15°, ±15° and ±15° is defined as R (as for Rat each part, the R at the surface part is defined as Ra, the R at the ¼×t part is defined as Rb, and the R at the ½×t part is defined as Rc), R is 0.35 or more and 0.80 or less; and the requirement (2) that each of the Ra, the Rb and the Rc falls in the range of ±20% of an average R value [Rave=(Ra+Rb+Rc)/3].
摘要翻译：本发明提供一种能够通过含有Ni和稀土元素的Al系合金溅射靶在高速沉积时抑制飞溅的技术，其中当晶体取向<001>，<011>，<111>时，在Al基合金溅射靶的表面部分的每个溅射表面的法线方向上，¼×t（t：Al基合金溅射靶的厚度）部分和½ 通过电子背散射衍射图法观察其×t部分，Al系合金溅射靶满足以下要求（1）：当<001>±15°，<011>±15°的面积分数并且<112>±15°被定义为R（对于大鼠每个部分，表面部分的R定义为Ra，¼×t部分的R定义为Rb，R在½×t 部分定义为Rc），R为0.35以上至0.80以下; 以及R a，R b和R c中的每一个落在平均R值[Rave =（Ra + Rb + Rc）/ 3]的±20％的范围内的要求（2）。

2. 发明申请

US20130306469A1 OXIDE SINTERED BODY AND SPUTTERING TARGET 有权
标题翻译：氧化物烧结体和溅射目标
公开(公告)号：US20130306469A1
公开(公告)日：2013-11-21
申请号：US13981729
申请日：2012-02-09
申请人： Moriyoshi Kanamaru , Yuki Iwasaki , Minoru Matsui , Hiroshi Goto , Akira Nambu
发明人： Moriyoshi Kanamaru , Yuki Iwasaki , Minoru Matsui , Hiroshi Goto , Akira Nambu
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , C04B35/01 , C04B35/453 , C04B35/457 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C23C14/086
摘要： Provided is an oxide sintered body suitably used for producing an oxide semiconductor film for a display device, the oxide sintered body capable of forming an oxide semiconductor film exerting excellent conductivity, having high relative density and excellent in-plane uniformity, and exhibiting high carrier mobility. This oxide sintered body is obtained by combining and sintering a zinc oxide powder, a tin oxide powder, and an indium oxide powder. The oxide sintered body satisfies the following equation (1) when the oxide sintered body is subjected to X-ray diffraction, Equation (1): [A/(A+B+C+D)]×100≧70. In equation (1), A represents the XRD peak intensity in the vicinity of 2θ=34°, B represents the XRD peak intensity in the vicinity of 2θ=31°, C represents the XRD peak intensity in the vicinity of 2θ=35°, and D represents the XRD peak intensity in the vicinity of 2ν=26.5°.
摘要翻译：本发明提供一种适合用于制造显示装置用氧化物半导体膜的氧化物烧结体，能够形成氧化物半导体膜的氧化物烧结体，具有优异的导电性，相对密度高，面内均匀性优异，载流子迁移率高。该氧化物烧结体通过组合并烧结氧化锌粉末，氧化锡粉末和氧化铟粉末而获得。当氧化物烧结体进行X射线衍射时，氧化物烧结体满足下式（1）：等式（1）：[A /（A + B + C + D）]×100> = 70。在式（1）中，A表示2θ= 34°附近的XRD峰强度，B表示2θ= 31°附近的XRD峰强度，C表示2θ= 35°附近的XRD峰强度，D表示2nu = 26.5°附近的XRD峰强度。

3. 发明授权

US09175380B2 Oxide sintered body and sputtering target 有权
标题翻译：氧化物烧结体和溅射靶
公开(公告)号：US09175380B2
公开(公告)日：2015-11-03
申请号：US13981729
申请日：2012-02-09
申请人： Moriyoshi Kanamaru , Yuki Iwasaki , Minoru Matsui , Hiroshi Goto , Akira Nambu
发明人： Moriyoshi Kanamaru , Yuki Iwasaki , Minoru Matsui , Hiroshi Goto , Akira Nambu
IPC分类号： C25B11/00 , C25B13/00 , C23C14/34 , C04B35/01 , C04B35/453 , C04B35/457 , C23C14/08
CPC分类号： C23C14/3414 , C04B35/01 , C04B35/453 , C04B35/457 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C23C14/086
摘要： Provided is an oxide sintered body suitably used for producing an oxide semiconductor film for a display device, the oxide sintered body capable of forming an oxide semiconductor film exerting excellent conductivity, having high relative density and excellent in-plane uniformity, and exhibiting high carrier mobility. This oxide sintered body is obtained by combining and sintering a zinc oxide powder, a tin oxide powder, and an indium oxide powder. The oxide sintered body satisfies the following equation (1) when the oxide sintered body is subjected to X-ray diffraction, Equation (1): [A/(A+B+C+D)]×100≧70. In equation (1), A represents the XRD peak intensity in the vicinity of 2θ=34°, B represents the XRD peak intensity in the vicinity of 2θ=31°, C represents the XRD peak intensity in the vicinity of 2θ=35°, and D represents the XRD peak intensity in the vicinity of 2θ=26.5°.
摘要翻译：本发明提供一种适合用于制造显示装置用氧化物半导体膜的氧化物烧结体，能够形成氧化物半导体膜的氧化物烧结体，具有优异的导电性，相对密度高，面内均匀性优异，载流子迁移率高。该氧化物烧结体通过组合并烧结氧化锌粉末，氧化锡粉末和氧化铟粉末而获得。当氧化物烧结体进行X射线衍射时，氧化物烧结体满足下列等式（1）：等式（1）：[A /（A + B + C + D）]×100≥70。在等式（1）中，A表示2附近的XRD峰强度; = 34°，B表示2附近的XRD峰强度; = 31°，C表示2附近的XRD峰强度; = 35°，D表示2θ附近的XRD峰强度= 26.5°。

4. 发明申请

US20130334039A1 OXIDE SINTERED BODY AND SPUTTERING TARGET 审中-公开
标题翻译：氧化物烧结体和溅射目标
公开(公告)号：US20130334039A1
公开(公告)日：2013-12-19
申请号：US14002491
申请日：2012-03-01
申请人： Hiroshi Goto , Yuki Iwasaki
发明人： Hiroshi Goto , Yuki Iwasaki
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , C04B35/453 , C04B35/457 , C04B2235/3217 , C04B2235/3244 , C04B2235/3251 , C04B2235/3279 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/3418 , C04B2235/963 , C23C14/3414 , H01L21/02554 , H01L21/02565 , H01L21/02631
摘要： Provided are an oxide sintered body and a sputtering target which are suitable for use in producing an oxide semiconductor film for display devices and combine high electroconductivity with a high relative density and with which it is possible to form an oxide semiconductor film having a high carrier mobility. In particular, even when used in production by a direct-current sputtering method, the oxide sintered body and the sputtering target are less apt to generate nodules and have excellent direct-current discharge stability which renders long-term stable discharge possible. This oxide sintered body is an oxide sintered body obtained by mixing zinc oxide, tin oxide, and an oxide of at least one metal (M metal) selected from the group consisting of Al, Hf, Ni, Si, Ga, In, and Ta, and sintering the mixture, the oxide sintered body having a Vickers hardness of 400 Hv or higher.
摘要翻译：本发明提供一种氧化物烧结体和溅射靶，其适用于制造显示装置用氧化物半导体膜，并且具有高相对密度的高导电性，并且可以形成具有高载流子迁移率的氧化物半导体膜。特别是，即使在通过直流溅射法生产中使用时，氧化物烧结体和溅射靶也不易产生结节，并且具有优异的直流放电稳定性，这使得长期稳定的放电成为可能。该氧化物烧结体是通过将氧化锌，氧化锡和选自Al，Hf，Ni，Si，Ga，In和Ta中的至少一种金属（M金属）的氧化物混合而获得的氧化物烧结体，并烧结混合物，维氏硬度为400Hv以上的氧化物烧结体。

5. 发明授权

US08580093B2 AL-Ni-La-Cu alloy sputtering target and manufacturing method thereof 有权
标题翻译： AL-Ni-La-Cu合金溅射靶及其制造方法
公开(公告)号：US08580093B2
公开(公告)日：2013-11-12
申请号：US12415379
申请日：2009-03-31
申请人： Katsutoshi Takagi , Masaya Ehira , Yuki Iwasaki , Hiroshi Goto
发明人： Katsutoshi Takagi , Masaya Ehira , Yuki Iwasaki , Hiroshi Goto
IPC分类号： C23C14/00 , C25B11/00 , C25B13/00
CPC分类号： C23C14/3414
摘要： The present invention provides a technique capable of decreasing a generation of splashing upon depositing by using an Al—Ni—La—Cu alloy sputtering target comprising Ni, La, and Cu. The invention relates to an Al—Ni—La—Cu alloy sputtering target comprising Ni, La and Cu, in which (1) a total area of an Al—Ni intermetallic compound mainly comprising Al and Ni and having an average grain size of 0.3 μm or more and 3 μm or less is 70% or more by area ratio based on an entire area of the Al—Ni intermetallic compound, and (2) a total area of an Al—La—Cu intermetallic compound mainly comprising Al, La and Cu and having an average grain size of 0.2 μm or more and 2 μm or less is 70% or more by area ratio based on an entire area of the Al—La—Cu intermetallic compound, in a case where a portion of the sputtering target is observed within a range of from ¼t (t: thickness) to ¾t along a cross section vertical to a plane of the sputtering target by using a scanning electron microscope at a magnification of 2000.
摘要翻译：本发明提供一种能够通过使用包含Ni，La和Cu的Al-Ni-La-Cu合金溅射靶，沉积时减少溅射产生的技术。本发明涉及包含Ni，La和Cu的Al-Ni-La-Cu合金溅射靶，其中（1）主要包含Al和Ni并且平均粒径为0.3的Al-Ni金属间化合物的总面积基于Al-Ni金属间化合物的整个面积，3μm以下的3μm以下的面积比为70％以上，（2）主要包含Al，La的Al-La-Cu金属间化合物的总面积并且平均粒径为0.2μm以上且2μm以下的Cu相对于Al-La-Cu金属间化合物的整个面积的面积比为70％以上，在溅射的一部分的情况下通过使用放大2000倍的扫描电子显微镜，沿垂直于溅射靶的平面的横截面在〜（t：厚度）〜¾t的范围内观察靶。

6. 发明申请

US20130341183A1 OXIDE SINTERED BODY AND SPUTTERING TARGET 有权
标题翻译：氧化物烧结体和溅射目标
公开(公告)号：US20130341183A1
公开(公告)日：2013-12-26
申请号：US14002768
申请日：2012-03-01
申请人： Hiroshi Goto , Yuki Iwasaki
发明人： Hiroshi Goto , Yuki Iwasaki
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , C04B35/453 , C04B35/457 , C04B2235/3217 , C04B2235/3244 , C04B2235/3251 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C23C14/08 , C23C14/086 , H01L21/02554 , H01L21/02565 , H01L21/02631
摘要： Provided are an oxide sintered body and a sputtering target that are ideal for the production of an oxide semiconductor film for a display device. The oxide sintered body and sputtering target that are provided have both high conductivity and high relative density, are capable of forming an oxide semiconductor film having a high carrier mobility, and in particular, have excellent direct-current discharge stability in that long-term, stable discharge is possible, even when used by the direct-current sputtering method. The oxide sintered body of the invention is an oxide sintered body obtained by mixing and sintering zinc oxide, tin oxide, and an oxide of at least one metal (M metal) selected from the group consisting of Al, Hf, Ni, Si, Ga, In, and Ta. When the in-plane specific resistance and the specific resistance in the direction of depth are approximated by Gaussian distribution, the distribution coefficient σ of the specific resistance is 0.02 or less.
摘要翻译：提供了一种氧化物烧结体和溅射靶，其对于制造用于显示装置的氧化物半导体膜是理想的。所提供的氧化物烧结体和溅射靶都具有高导电性和高相对密度，能够形成具有高载流子迁移率的氧化物半导体膜，并且特别地，在长期内具有优异的直流放电稳定性，即使通过直流溅射法使用也能够稳定地进行放电。本发明的氧化物烧结体是通过将氧化锌，氧化锡和至少一种选自Al，Hf，Ni，Si，Ga的金属（M金属）的氧化物混合并烧结而得到的氧化物烧结体，In和Ta。当面内电阻率和深度方向的电阻率由高斯分布近似时，电阻率的分布系数σ为0.02以下。

7. 发明授权

US08163143B2 Al-Ni-La-Si system Al-based alloy sputtering target and process for producing the same 有权
标题翻译： Al-Ni-La-Si系Al基合金溅射靶及其制造方法
公开(公告)号：US08163143B2
公开(公告)日：2012-04-24
申请号：US12172442
申请日：2008-07-14
申请人： Katsutoshi Takagi , Yuki Iwasaki , Masaya Ehira , Akira Nanbu , Mototaka Ochi , Hiroshi Goto , Nobuyuki Kawakami
发明人： Katsutoshi Takagi , Yuki Iwasaki , Masaya Ehira , Akira Nanbu , Mototaka Ochi , Hiroshi Goto , Nobuyuki Kawakami
IPC分类号： C23C14/00
CPC分类号： C23C14/3414 , B22F2998/10 , C22C1/0491 , C22C21/00 , C22F1/04 , B22F9/082 , B22F3/115 , B22F3/15 , B22F3/17 , B22F3/18
摘要： The present invention relates to an Al—Ni—La—Si system Al-based alloy sputtering target including Ni, La and Si, in which, when a section from (¼)t to (¾)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2000 times, (1) a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 μm to 3 μm with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al—Ni—La—Si system intermetallic compound having an average particle diameter of 0.2 μm to 2 μm with respect to a total area of the entire Al—Ni—La—Si system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni—La—Si system intermetallic compound being mainly composed of Al, Ni, La, and Si.
摘要翻译：本发明涉及包含Ni，La和Si的Al-Ni-La-Si系Al基合金溅射靶，其中当在（a）中的（¼）t至（¾）t（t：厚度）用扫描电子显微镜观察垂直于溅射靶的平面的横截面为2000倍，（1）平均粒径为0.3μm〜3μm的Al-Ni系金属间化合物的总面积与 Al-Ni系金属间化合物主要由Al和Ni构成，Al-Ni体系金属间化合物的总面积为面积率的70％以上，和（2）相对于Al-Ni-La-Si体系金属间化合物的总面积，平均粒径为0.2μm〜2μm的Al-Ni-La-Si系金属间化合物的总面积为 Al-Ni-La-Si系金属间化合物主要由Al，Ni，La和Si组成，面积分数为70％以上。

8. 发明申请

US20090026072A1 AL-NI-LA-SI SYSTEM AL-BASED ALLOY SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译： AL-NI-LA-SI系统AL合金喷射靶及其生产方法
公开(公告)号：US20090026072A1
公开(公告)日：2009-01-29
申请号：US12172442
申请日：2008-07-14
申请人： Katsutoshi Takagi , Yuki Iwasaki , Masaya Ehira , Akira Nanbu , Mototaka Ochi , Hiroshi Goto , Nobuyuki Kawakami
发明人： Katsutoshi Takagi , Yuki Iwasaki , Masaya Ehira , Akira Nanbu , Mototaka Ochi , Hiroshi Goto , Nobuyuki Kawakami
IPC分类号： C23C14/34 , C23C16/00
CPC分类号： C23C14/3414 , B22F2998/10 , C22C1/0491 , C22C21/00 , C22F1/04 , B22F9/082 , B22F3/115 , B22F3/15 , B22F3/17 , B22F3/18
摘要： The present invention relates to an Al—Ni—La—Si system Al-based alloy sputtering target including Ni, La and Si, in which, when a section from (¼)t to (¾)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2000 times, (1) a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 μm to 3 μm with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al—Ni—La—Si system intermetallic compound having an average particle diameter of 0.2 μm to 2 μm with respect to a total area of the entire Al—Ni—La—Si system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni—La—Si system intermetallic compound being mainly composed of Al, Ni, La, and Si.
摘要翻译：本发明涉及包含Ni，La和Si的Al-Ni-La-Si系Al基合金溅射靶，其中当在（a）中的（¼）t至（¾）t（t：厚度）用扫描电子显微镜以2000倍的倍数观察垂直于溅射靶的平面的横截面，（1）平均粒径为0.3μm〜3μm的Al-Ni系金属间化合物的总面积， Al-Ni系金属间化合物主要由Al和Ni构成，Al-Ni体系金属间化合物的总面积为面积率的70％以上，和（2）相对于Al-Ni-La-Si体系金属间化合物的总面积，平均粒径为0.2μm〜2μm的Al-Ni-La-Si系金属间化合物的总面积为 Al-Ni-La-Si系金属间化合物主要由Al，Ni，La和Si组成，面积分数为70％以上。

9. 发明授权

US09058914B2 Oxide sintered compact and sputtering target 有权
标题翻译：氧化物烧结体和溅射靶
公开(公告)号：US09058914B2
公开(公告)日：2015-06-16
申请号：US13885868
申请日：2011-11-11
申请人： Hiroshi Goto , Yuki Iwasaki , Masaya Ehira , Yoichiro Yoneda
发明人： Hiroshi Goto , Yuki Iwasaki , Masaya Ehira , Yoichiro Yoneda
IPC分类号： H01B1/08 , C04B35/453 , C04B35/457 , C04B35/626 , C23C14/08 , C23C14/34
CPC分类号： H01B1/08 , C04B35/453 , C04B35/457 , C04B35/6261 , C04B35/62695 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/6567 , C04B2235/6585 , C04B2235/77 , C04B2235/80 , C23C14/086 , C23C14/3414
摘要： This oxide sintered compact is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide. As determined by X-ray diffractometry of this oxide sintered compact, the oxide sintered compact has a Zn2SnO4 phase as the main phase and contains an In/In2O3—ZnSnO3 solid solution wherein In and/or In2O3 is solid-solved in ZnSnO3, but a ZnxInyOz phase (wherein x, y and z each represents an arbitrary positive integer) is not detected. Consequently, the present invention was able to provide an oxide sintered compact which is suitable for use in the production of an oxide semiconductor film for display devices and has both high electrical conductivity and high relative density. The oxide sintered compact is capable of forming an oxide semiconductor film that has high carrier mobility.
摘要翻译：该氧化物烧结体通过混合和烧结氧化锌，氧化锡和氧化铟的粉末而获得。通过该氧化物烧结体的X射线衍射测定，氧化物烧结体以Zn2SnO4相为主相，并含有In / In2O3-ZnSnO3固溶体，其中In和/或In 2 O 3固溶于ZnSnO 3，但是不检测Zn x In y O z相（其中，x，y和z各自表示任意的正整数）。因此，本发明能够提供一种适用于制造显示装置用氧化物半导体膜的氧化物烧结体，具有高导电性和高相对密度。氧化物烧结体能够形成具有高载流子迁移率的氧化物半导体膜。

10. 发明授权

US09040441B2 Oxide sintered body and sputtering target 有权
标题翻译：氧化物烧结体和溅射靶
公开(公告)号：US09040441B2
公开(公告)日：2015-05-26
申请号：US14002768
申请日：2012-03-01
申请人： Hiroshi Goto , Yuki Iwasaki
发明人： Hiroshi Goto , Yuki Iwasaki
IPC分类号： C23C14/08 , C23C14/34 , C04B35/453 , C04B35/457 , H01L21/02
CPC分类号： C23C14/3414 , C04B35/453 , C04B35/457 , C04B2235/3217 , C04B2235/3244 , C04B2235/3251 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C23C14/08 , C23C14/086 , H01L21/02554 , H01L21/02565 , H01L21/02631
摘要： Provided are an oxide sintered body and a sputtering target that are ideal for the production of an oxide semiconductor film for a display device. The oxide sintered body and sputtering target that are provided have both high conductivity and high relative density, are capable of forming an oxide semiconductor film having a high carrier mobility, and in particular, have excellent direct-current discharge stability in that long-term, stable discharge is possible, even when used by the direct-current sputtering method. The oxide sintered body of the invention is an oxide sintered body obtained by mixing and sintering zinc oxide, tin oxide, and an oxide of at least one metal (M metal) selected from the group consisting of Al, Hf, Ni, Si, Ga, In, and Ta. When the in-plane specific resistance and the specific resistance in the direction of depth are approximated by Gaussian distribution, the distribution coefficient σ of the specific resistance is 0.02 or less.
摘要翻译：提供了一种氧化物烧结体和溅射靶，其对于制造用于显示装置的氧化物半导体膜是理想的。所提供的氧化物烧结体和溅射靶都具有高导电性和高相对密度，能够形成具有高载流子迁移率的氧化物半导体膜，并且特别地，在长期内具有优异的直流放电稳定性，即使通过直流溅射法使用也能够稳定地进行放电。本发明的氧化物烧结体是通过将氧化锌，氧化锡和至少一种选自Al，Hf，Ni，Si，Ga的金属（M金属）的氧化物混合并烧结而得到的氧化物烧结体，In和Ta。当面内比电阻和深度方向的电阻近似为高斯分布时，分布系数＆sgr; 的电阻为0.02以下。

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