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    • 7. 发明授权
    • Structure of mounting shield cover and display device
    • 安装屏蔽罩和显示装置的结构
    • US07719857B2
    • 2010-05-18
    • US11928401
    • 2007-10-30
    • Yuji Ogawa
    • Yuji Ogawa
    • H05K9/00
    • H05K9/0054
    • A structure of mounting a shield cover according to the present invention includes a shield cover having an insertion part which is inserted into a gap formed between a circuit substrate and a shield cover fastening part along the circuit substrate. The insertion part of the shield cover includes a convex part that is elastic and deformable, and the end of the insertion part and the shield cover fastening part come in contact with each other by the elasticity with the convex part being in contact with the circuit substrate as the fulcrum.
    • 根据本发明的安装屏蔽罩的结构包括屏蔽盖,其具有插入部分,插入部分沿着电路基板插入形成在电路基板和屏蔽盖紧固部分之间的间隙中。 屏蔽罩的插入部分包括弹性和可变形的凸起部分,并且插入部分和屏蔽盖紧固部分的端部通过弹性而彼此接触,凸起部分与电路基板接触 为支点。
    • 9. 发明申请
    • PROCESS FOR PRODUCTION OF AROMATIC COMPOUND
    • 芳香化合物生产工艺
    • US20090240093A1
    • 2009-09-24
    • US12067148
    • 2006-09-29
    • Masaru IchikawaRyoichi KojimaYuji OgawaMasamichi Kuramoto
    • Masaru IchikawaRyoichi KojimaYuji OgawaMasamichi Kuramoto
    • C07C2/00
    • C07C2/76C07C15/02
    • An aromatic compound, particularly benzene, is stably produced in the presence of a catalyst from a lower hydrocarbon having 2 or more carbon atoms, particularly from an ethane-containing gas composition such as ethane gas and natural gas. Disclosed is a process for producing an aromatic compound by reacting ethane or an ethane-containing raw gas in the presence of a catalyst. The catalyst may comprise molybdenum carried on metallosilicate such as H-type ZSM-5H or H-type MCM-22. In the reaction, the temperature is from 550 to 750° C., preferably not lower than 600° C. and not higher than 680° C. Additionally, the raw gas further contains methane and hydrogen is added thereto, thereby improving the production efficiency and stability.
    • 在具有2个或更多个碳原子的低级烃的催化剂的存在下,特别是从含乙烷的气体组合物如乙烷气体和天然气中稳定地制备芳族化合物,特别是苯。 公开了一种在催化剂存在下使乙烷或含乙烷的原料气体反应生成芳族化合物的方法。 催化剂可以包括载在金属硅酸盐上的钼,例如H型ZSM-5H或H型MCM-22。 在该反应中,温度为550〜750℃,优选为600℃以上且不高于680℃。此外,原料气体还含有甲烷,向其中添加氢,从而提高生产效率 和稳定性。
    • 10. 发明申请
    • Saw device manufacturing method
    • 锯装置制造方法
    • US20060150381A1
    • 2006-07-13
    • US10559238
    • 2004-06-01
    • Tatsuya AnzaiYuji OgawaYasuhide Onozawa
    • Tatsuya AnzaiYuji OgawaYasuhide Onozawa
    • H04R17/00
    • H03H9/1085H01L2224/0554H01L2224/05568H01L2224/05573H01L2224/16225H01L2924/00014H03H3/08Y10T29/42H01L2224/05599H01L2224/0555H01L2224/0556
    • To provide a high quality SAW device with enhanced productivity, wherein an outer face of a SAW chip mounted on a mounting substrate is covered with a heat-softened resin sheet and resin is filled on the SAW chip to form an airtight space below an IDT in the SAW device. A method for manufacturing the SAW device includes: a step of flip-chip mounting the SAW chip on the mounting substrate, a step of placing the resin sheet on an upper face of the SAW chip; a laminating step of setting ambient environment to pressure-reduced or vacuum atmosphere and covering the outer face of the SAW chip with resin while securing the airtight space by pressurizing the resin sheet while heating the resin sheet; a press forming step of curing the resin while maintaining the airtight space by maintaining pressurized and heated state in the laminating step; and a post-curing step of performing heating at a temperature and for a time in which the resin completely cures, wherein a thickness tr of the resin sheet before the laminating step satisfies an equation of L/{(X+Gx)(Y+Gy)}≦tr.
    • 为了提供提高生产率的高品质SAW器件,其中安装在安装基板上的SAW芯片的外表面被热软化的树脂片覆盖,树脂填充在SAW芯片上,以在IDT下方形成气密空间 SAW器件。 一种制造SAW器件的方法包括:将SAW芯片倒装安装在安装基板上的步骤,将树脂片放置在SAW芯片的上表面上的步骤; 将周围环境设置为减压或真空气氛并用树脂覆盖SAW芯片的外表面的层压步骤,同时通过在加热树脂板的同时加压树脂板来确保气密空间; 压制成形步骤,通过在层叠步骤中保持加压和加热状态,同时保持气密空间而固化树脂; 以及在树脂完全固化的温度和时间进行加热的后固化步骤,其中层压步骤之前的树脂片的厚度tr满足方程式<?in-line-formula description =“In 线/公式“end =”lead“?> L / {(X + Gx)(Y + Gy)} <= tr。 <?in-line-formula description =“In-line Formulas”end =“tail”?>