专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090090978A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090090978A1
公开(公告)日：2009-04-09
申请号：US12242142
申请日：2008-09-30
申请人： Yuji Harada , Kazuyuki Sawada , Masahiko Niwayama , Masaaki Okita
发明人： Yuji Harada , Kazuyuki Sawada , Masahiko Niwayama , Masaaki Okita
IPC分类号： H01L21/8236 , H01L27/088
CPC分类号： H01L21/823462 , H01L21/823418
摘要： A high-voltage transistor and a peripheral circuit including a second conductivity type MOSFET are provided together on a first conductivity type semiconductor substrate. The high-voltage transistor includes: a low concentration drain region of a second conductivity type formed in the semiconductor substrate; a low concentration source region of a second conductivity type formed in the semiconductor substrate and spaced apart from the low concentration drain region; and a high concentration source region of a second conductivity type having a diffusion depth deeper than that of the low concentration source region. A diffusion depth of the low concentration source region is equal to that of source/drain regions of the MOSFET.
摘要翻译：在第一导电型半导体基板上一起设置高压晶体管和包括第二导电型MOSFET的外围电路。高电压晶体管包括：形成在半导体衬底中的第二导电类型的低浓度漏极区域; 形成在半导体衬底中并与低浓度漏极区隔开的第二导电类型的低浓度源区; 以及具有比低浓度源区域的扩散深度更深的扩散深度的第二导电类型的高浓度源区域。低浓度源极区域的扩散深度等于MOSFET的源极/漏极区域的扩散深度。

2. 发明授权

US07851871B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07851871B2
公开(公告)日：2010-12-14
申请号：US12242142
申请日：2008-09-30
申请人： Yuji Harada , Kazuyuki Sawada , Masahiko Niwayama , Masaaki Okita
发明人： Yuji Harada , Kazuyuki Sawada , Masahiko Niwayama , Masaaki Okita
IPC分类号： H01L29/768
CPC分类号： H01L21/823462 , H01L21/823418
摘要： A high-voltage transistor and a peripheral circuit including a second conductivity type MOSFET are provided together on a first conductivity type semiconductor substrate. The high-voltage transistor includes: a low concentration drain region of a second conductivity type formed in the semiconductor substrate; a low concentration source region of a second conductivity type formed in the semiconductor substrate and spaced apart from the low concentration drain region; and a high concentration source region of a second conductivity type having a diffusion depth deeper than that of the low concentration source region. A diffusion depth of the low concentration source region is equal to that of source/drain regions of the MOSFET.
摘要翻译：在第一导电型半导体基板上一起设置高压晶体管和包括第二导电型MOSFET的外围电路。高电压晶体管包括：形成在半导体衬底中的第二导电类型的低浓度漏极区域; 形成在半导体衬底中并与低浓度漏极区隔开的第二导电类型的低浓度源区; 以及具有比低浓度源区域的扩散深度更深的扩散深度的第二导电类型的高浓度源区域。低浓度源极区域的扩散深度等于MOSFET的源极/漏极区域的扩散深度。

3. 发明授权

US07759711B2 Semiconductor device with substrate having increased resistance due to lattice defect and method for fabricating the same 失效
标题翻译：具有由于晶格缺陷引起的电阻增加的基板的半导体器件及其制造方法
公开(公告)号：US07759711B2
公开(公告)日：2010-07-20
申请号：US12255933
申请日：2008-10-22
申请人： Kazuyuki Sawada , Yuji Harada , Masahiko Niwayama , Saichirou Kaneko , Yoshimi Shimizu
发明人： Kazuyuki Sawada , Yuji Harada , Masahiko Niwayama , Saichirou Kaneko , Yoshimi Shimizu
IPC分类号： H01L29/32 , H01L21/26
CPC分类号： H01L29/7393 , H01L29/063 , H01L29/66325
摘要： Disclosed is a semiconductor device including: an N-type RESURF region formed in a P-type semiconductor substrate; a P-type base region formed in an upper portion of the semiconductor substrate so as to be adjacent to the RESURF region; an N-type emitter/source region formed in the base region so as to be apart from the RESURF region; a P-type base connection region formed in the base region so as to be adjacent to the emitter/source region; a gate insulating film and a gate electrode overlying the emitter/source region, the base region, and the RESURF region; and a P-type collector region formed in the RESURF region so as to be apart from the base region. Lattice defect is generated in the semiconductor substrate such that a resistance value of the semiconductor substrate is twice or more the resistance value of the semiconductor substrate that depends on the concentration of an impurity implanted in the semiconductor substrate.
摘要翻译：公开了一种半导体器件，包括：形成在P型半导体衬底中的N型RESURF区; 形成在半导体衬底的上部以与RESURF区相邻的P型基极区; 形成在所述基底区域中以与所述RESURF区域分离的N型发射极/源极区域; 形成在所述基极区域中以与所述发射极/源极区域相邻的P型基极连接区域; 栅极绝缘膜和覆盖发射极/源极区域，基极区域和RESURF区域的栅电极; 以及形成在RESURF区域中以与基底区域分离的P型集电极区域。在半导体衬底中产生晶格缺陷，使得半导体衬底的电阻值是取决于注入在半导体衬底中的杂质的浓度的半导体衬底的电阻值的两倍或更多。

4. 发明申请

US20090206366A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090206366A1
公开(公告)日：2009-08-20
申请号：US12255933
申请日：2008-10-22
申请人： Kazuyuki Sawada , Yuji Harada , Masahiko Niwayama , Saichirou Kaneko , Yoshimi Shimizu
发明人： Kazuyuki Sawada , Yuji Harada , Masahiko Niwayama , Saichirou Kaneko , Yoshimi Shimizu
IPC分类号： H01L29/739 , H01L21/331
CPC分类号： H01L29/7393 , H01L29/063 , H01L29/66325
摘要： Disclosed is a semiconductor device including: an N-type RESURF region formed in a P-type semiconductor substrate; a P-type base region formed in an upper portion of the semiconductor substrate so as to be adjacent to the RESURF region; an N-type emitter/source region formed in the base region so as to be apart from the RESURF region; a P-type base connection region formed in the base region so as to be adjacent to the emitter/source region; a gate insulating film and a gate electrode overlying the emitter/source region, the base region, and the RESURF region; and a P-type collector region formed in the RESURF region so as to be apart from the base region. Lattice defect is generated in the semiconductor substrate such that a resistance value of the semiconductor substrate is twice or more the resistance value of the semiconductor substrate that depends on the concentration of an impurity implanted in the semiconductor substrate.
摘要翻译：公开了一种半导体器件，包括：形成在P型半导体衬底中的N型RESURF区; 形成在半导体衬底的上部以与RESURF区相邻的P型基极区; 形成在所述基底区域中以与所述RESURF区域分离的N型发射极/源极区域; 形成在所述基极区域中以与所述发射极/源极区域相邻的P型基极连接区域; 栅极绝缘膜和覆盖发射极/源极区域，基极区域和RESURF区域的栅电极; 以及形成在RESURF区域中以与基底区域分离的P型集电极区域。在半导体衬底中产生晶格缺陷，使得半导体衬底的电阻值是取决于注入在半导体衬底中的杂质的浓度的半导体衬底的电阻值的两倍或更多。

5. 发明申请

US20100001315A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20100001315A1
公开(公告)日：2010-01-07
申请号：US12473604
申请日：2009-05-28
申请人： Masaaki OKITA , Kazuyuki Sawada , Yuji Harada , Saichirou Kaneko , Hiroto Yamagiwa
发明人： Masaaki OKITA , Kazuyuki Sawada , Yuji Harada , Saichirou Kaneko , Hiroto Yamagiwa
IPC分类号： H01L29/739 , H01L29/78
CPC分类号： H01L29/0847 , H01L29/0634 , H01L29/0692 , H01L29/7393 , H01L29/7835 , H01L2029/42388 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first diffusion region of a second conductivity type formed in an upper portion of a semiconductor substrate of a first conductivity type, a second diffusion region formed in a surface portion of the first diffusion region, a third diffusion region of the second conductivity type formed a predetermined distance spaced apart from the second diffusion region in the surface portion of the semiconductor substrate, a fourth diffusion region of the first conductivity type formed adjacent to the third diffusion region and electrically connected to the third diffusion region, a gate electrode formed on a part between the first diffusion region and the third diffusion region, and an insulating film formed thereon. The impurity concentration of the first diffusion region is set higher than an impurity concentration at which a depletion region extending from an junction interface between the first diffusion region and the semiconductor substrate is formed in a part of the first diffusion region which is between the second diffusion region and the gate electrode when a voltage is applied to the second diffusion region.
摘要翻译：半导体器件包括形成在第一导电类型的半导体衬底的上部中的第二导电类型的第一扩散区域，形成在第一扩散区域的表面部分中的第二扩散区域，第二扩散区域的第二扩散区域在半导体衬底的表面部分形成与第二扩散区间隔开的预定距离的导电类型，与第三扩散区相邻形成并与第三扩散区电连接的第一导电类型的第四扩散区，栅电极形成在第一扩散区域和第三扩散区域之间的部分上，以及形成在其上的绝缘膜。将第一扩散区域的杂质浓度设定为高于从第一扩散区域和半导体衬底之间的结界面延伸的耗尽区域形成在第一扩散区域的位于第二扩散区域的部分之间的杂质浓度区域和栅电极，当电压施加到第二扩散区域时。

6. 发明授权

US08431323B2 Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process 有权
公开(公告)号：US08431323B2
公开(公告)日：2013-04-30
申请号：US12608556
申请日：2009-10-29
申请人： Takeru Watanabe , Satoshi Shinachi , Takeshi Kinsho , Koji Hasegawa , Yuji Harada , Jun Hatakeyama , Kazunori Maeda , Tomohiro Kobayashi
发明人： Takeru Watanabe , Satoshi Shinachi , Takeshi Kinsho , Koji Hasegawa , Yuji Harada , Jun Hatakeyama , Kazunori Maeda , Tomohiro Kobayashi
IPC分类号： G03F7/039 , G03F7/11 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/11 , C07D307/04 , C07D307/77 , C07D315/00 , C07D319/06 , C08F14/18 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , C08F2/00
摘要： A fluorinated monomer of cyclic acetal structure has formula (1) wherein R is a C1-C20 alkyl group which may be substituted with halogen or separated by oxygen or carbonyl, and Z is a divalent organic group which forms a ring with alkylenoxy and contains a polymerizable unsaturated group. A polymer derived from the fluorinated monomer may be endowed with appropriate water repellency, water sliding property, lipophilicity, acid lability and hydrolyzability and is useful in formulating a protective coating composition and a resist composition.

7. 发明授权

US08313886B2 Resist composition and patterning process 有权
标题翻译：抗蚀剂组成和图案化工艺
公开(公告)号：US08313886B2
公开(公告)日：2012-11-20
申请号：US12761202
申请日：2010-04-15
申请人： Yuji Harada , Jun Hatakeyama , Koji Hasegawa , Tomohiro Kobatashi
发明人： Yuji Harada , Jun Hatakeyama , Koji Hasegawa , Tomohiro Kobatashi
IPC分类号： G03F7/004 , G03F7/028 , G03F7/039 , G03F7/26
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/2041
摘要： An additive polymer comprising recurring units of formula (1) is added to a resist composition comprising a base resin, a photoacid generator, and an organic solvent. R1 is hydrogen or methyl, R2 is alkylene or fluoroalkylene, and R3 is fluoroalkyl. The additive polymer is highly transparent to radiation with wavelength of up to 200 nm. Water repellency, water slip, acid lability, hydrolysis and other properties of the polymer may be adjusted by a choice of polymer structure.
摘要翻译：将包含式（1）的重复单元的添加剂聚合物加入到包含基础树脂，光致酸发生剂和有机溶剂的抗蚀剂组合物中。 R1是氢或甲基，R2是亚烷基或氟代亚烷基，R3是氟烷基。添加剂聚合物对波长高达200nm的辐射是高度透明的。通过选择聚合物结构可以调节聚合物的拒水性，水滑动性，酸性，水解性和其它性能。

8. 发明授权

US08158330B2 Resist protective coating composition and patterning process 有权
标题翻译：抗蚀保护涂料组合物和图案化工艺
公开(公告)号：US08158330B2
公开(公告)日：2012-04-17
申请号：US12463750
申请日：2009-05-11
申请人： Yuji Harada , Jun Hatakeyama , Koji Hasegawa , Satoshi Shinachi
发明人： Yuji Harada , Jun Hatakeyama , Koji Hasegawa , Satoshi Shinachi
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/11 , C08F220/24 , C08F232/08 , G03F7/0046 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A protective coating composition comprising a copolymer of an alkali-soluble (α-trifluoromethyl) acrylate and a norbornene derivative as a base polymer, optionally in admixture with a second polymer containing sulfonic acid and/or sulfonic acid amine salt in repeat units is applied onto a resist film. The protective coating is effective in minimizing development defects and forming a resist pattern of improved profile.
摘要翻译：包含碱溶性（α-三氟甲基）丙烯酸酯和降冰片烯衍生物作为基础聚合物的共聚物的保护性涂料组合物，任选地与含有重复单元的磺酸和/或磺酸胺盐的第二聚合物的混合物施加到抗蚀膜保护涂层有效地使开发缺陷最小化并形成改进型材的抗蚀剂图案。

9. 发明授权

US08057981B2 Resist composition, resist protective coating composition, and patterning process 有权
标题翻译：抗蚀剂组合物，抗蚀保护涂料组合物和图案化工艺
公开(公告)号：US08057981B2
公开(公告)日：2011-11-15
申请号：US12371347
申请日：2009-02-13
申请人： Yuji Harada , Jun Hatakeyama , Kazunori Maeda , Tomohiro Kobayashi
发明人： Yuji Harada , Jun Hatakeyama , Kazunori Maeda , Tomohiro Kobayashi
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38 , G03F7/11
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041 , Y10S430/108 , Y10S430/111 , Y10S430/143
摘要： A polymer obtained through copolymerization of a monomer having a hexafluoroalcohol pendant and a monomer having a hexafluoroalcohol pendant whose hydroxyl moiety has been protected is useful as an additive to a photoresist composition and as a protective coating material for immersion lithography. When processed by immersion lithography, the resist composition and protective coating composition exhibit good water repellency and water slip and produce few development defects.
摘要翻译：通过具有六氟醇侧基的单体和具有羟基部分被保护的六氟醇侧基的单体共聚得到的聚合物可用作光致抗蚀剂组合物的添加剂和浸渍光刻用保护涂料。当通过浸渍光刻处理时，抗蚀剂组合物和保护涂层组合物表现出良好的防水性和水滑动性，并且产生很少的显影缺陷。

10. 发明授权

US07759047B2 Resist protective film composition and patterning process 有权
标题翻译：抗保护膜组成和图案化工艺
公开(公告)号：US07759047B2
公开(公告)日：2010-07-20
申请号：US11798471
申请日：2007-05-14
申请人： Jun Hatakeyama , Yuji Harada , Takeru Watanabe
发明人： Jun Hatakeyama , Yuji Harada , Takeru Watanabe
IPC分类号： G03F7/00 , G03F7/004 , C08F14/18 , C08F20/00
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/2041
摘要： There is disclosed a resist protective film composition for forming a protective film on a photoresist film, comprising: at least a polymer including a repeating unit having one or more groups selected from a carboxyl group and α-trifluoromethyl alcohol groups; and an amine compound. There can be provided a resist protective film composition that makes it possible to provide more certainly rectangular and excellent patterns when a protective film is formed on a photoresist film.
摘要翻译：公开了一种用于在光致抗蚀剂膜上形成保护膜的抗蚀保护膜组合物，其包括：至少包含具有一个或多个选自羧基和α-三氟甲醇基团的基团的重复单元的聚合物; 和胺化合物。可以提供一种抗蚀剂保护膜组合物，当在光致抗蚀剂膜上形成保护膜时，可以提供更确定的矩形和优异的图案。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式